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| Number | Title | Issue Date |
| 7425735 | Multi-layer phase-changeable memory devices A phase-changeable memory device includes a phase-changeable material pattern and first and second electrodes electrically connected to the phase-changeable material pattern. The first and second electrodes are configured to provide an electrical signal to the phase... | 09/16/2008 |
| 7423300 | Single-mask phase change memory element A memory device. An array of memory elements is formed on a semiconductor chip. A parallel array of word lines extends in a first direction, connecting each memory element to a data source, and a parallel array of bit lines extends in a second direction, connecting ... | 09/09/2008 |
| RE40028 | Liquid crystal display device and method of manufacturing the same The present invention discloses a method of manufacturing a liquid crystal display device including a first photolithography process forming a gate electrode on a substrate; a second photolithography process including: a) depositing sequentially a gate insulating la... | 01/22/2008 |
| 7316666 | Fluid warming cassette with rails and a stiffening member A fluid warming cassette useful in a system for warming parenteral fluids is provided. The cassette comprises a thermally conductive, flexible fluid container with a fluid channel. Rails are disposed in the fluid container near its periphery, and a stiffener is disp... | 01/08/2008 |
| 7265397 | CCD imager constructed with CMOS fabrication techniques and back illuminated imager with improved light capture An optical sensor circuit for generating signals corresponding to received photoelectrons is formed on a single monolithic substrate and includes a charge coupled device (CCD) array. The array is formed of a plurality of pixels constructed by a standard CMOS process... | 09/04/2007 |
| 7235824 | Active gate CCD image sensor An active gate includes a substrate of a first conductivity type, a channel of a second conductivity type formed in the substrate, a first gate region of the first conductivity type formed in a corresponding first portion of the channel, and a first contact connecte... | 06/26/2007 |
| 7217968 | Recessed gate for an image sensor A novel image sensor cell structure and method of manufacture. The imaging sensor comprises a substrate, a gate comprising a dielectric layer and gate conductor formed on the dielectric layer, a collection well layer of a first conductivity type formed below a surfa... | 05/15/2007 |
| 7157754 | Solid-state imaging device and interline transfer CCD image sensor A high-performance solid-state imaging device is provided. The solid-state imaging device includes: a plurality of pixel cells; and a driving unit. Each of the plurality of pixel cells includes: a photodiode that converts incident light into a signal charge and stor... | 01/02/2007 |
| 7115927 | Phase changeable memory devices Phase-changeable memory devices and method of fabricating phase-changeable memory devices are provided that include a phase-changeable material pattern of a phase-changeable material that includes nitrogen atoms. First and second electrodes are electrically connecte... | 10/03/2006 |
| 7075129 | Image sensor with reduced p-well conductivity An image sensor includes a substrate of the first conductivity type; a channel of the first conductivity type that spans at least a portion of the substrate; a well of the second conductivity type that is positioned between the channel and substrate for a predetermi... | 07/11/2006 |
| 7053809 | Analog-to-digital converter circuitry having a cascade An analog to digital converter and/or related systems which in some aspects may contain but are not limited to: at least one cascade of N gain elements operably couplable with analog circuitry, and a gain element of the at least one cascade having a gain larger than... | 05/30/2006 |
| 7009227 | Photodiode structure and image pixel structure A CMOS imager with two adjacent pixel active area regions without the presence of an intervening trench isolation region that typically separates two adjacent pixels and their associated photodiodes is provided. The shared active area region isolates the two adjacen... | 03/07/2006 |
| 6987294 | Charge-coupled device and method of fabricating the same A charge-coupled device capable of attaining excellent performance with a single-layer gate electrode structure is obtained. This charge-coupled device, having a single-layer gate electrode structure, comprises a gate insulator film formed on a semiconductor substra... | 01/17/2006 |
| 6969878 | Surround-gate semiconductor device encapsulated in an insulating medium A semiconductor device is provided that includes a semiconductor channel region extending above a semiconductor substrate in a longitudinal direction between a semiconductor source region and a semiconductor drain region, and a gate region extending in the transvers... | 11/29/2005 |
| 6927435 | Semiconductor device and its production process A semiconductor device comprising a semiconductor substrate, gate insulators formed on the substrate, and gate electrodes formed on the gate insulators, the gate insulators which are mainly composed of a material selected from titanium oxide, zirconium oxide and haf... | 08/09/2005 |
| 6337284 | Liquid crystal display device and method of manufacturing the same The present invention discloses a method of manufacturing a liquid crystal display device including a first photolithography process forming a gate electrode on a substrate; a second photolithography process including: a) depositing sequentially a gate in... | 01/08/2002 |
| 6278142 | Semiconductor image intensifier A charge carrier multiplier is disclosed in which a carrier that passes through a high-field region lying entirely within the depleted semiconductor volume causes a single-step impact ionization without avalanching. By spacing the high-field region suffic... | 08/21/2001 |
| 6266087 | Circuit and technique for smear subtraction in CCD image sensors The image sensing device includes an image sensing area 22 having an antiblooming drain structure; and a frame memory area 24 coupled to the image sensing area 22 for storing charge from the image sensing area, wherein during charge integration, the antib... | 07/24/2001 |
| 6166412 | SOI device with double gate and method for fabricating the same A silicon-on-insulator (SOI) device having a double gate, comprising: a supporting substrate; a first insulating layer formed over the supporting substrate; a first silicon layer formed over the first insulating layer, the first silicon layer including a ... | 12/26/2000 |
| 6078069 | Bidirectional horizontal charge transfer device A bidirectional horizontal charge transfer device and method includes a charge transfer area formed within a substrate, a plurality of first, second, third and fourth poly gates formed over the charge transfer area,an insulating layer formed between the f... | 06/20/2000 |
| 6028348 | Low thermal impedance integrated circuit A frontside ground plane (306) integrated circuit with backside contacts (312) plus optional passive components such as microstrip (308) and capacitors. The frontside ground plane provides direct heat dissipation from active junctions such as heterojuncti... | 02/22/2000 |
| 5877520 | Trench lateral overflow drain antiblooming structure for virtual phase charge coupled devices with virtual gate element The lateral overflow drain for charge coupled devices includes: a semiconductor region 70 of a first conductivity type having a trench 92; a drain region 24 of a second conductivity type below the trench 92; a gate 20 in the trench 92 overlying and separa... | 03/02/1999 |
| 5825840 | Interline sensor employing photocapacitor gate An interline sensor is constructed using photocapacitors. The vertical shift register of the interline sensor is operated in a uniphase mode, i.e., holding one of the two phase (Ø2) at a D.C. potential while fluctuating the other phase (Ø1) between a vo... | 10/20/1998 |
| 5567641 | Method of making a bipolar gate charge coupled device with clocked virtual phase The charge coupled device cell has a semiconductor layer 20 of a first conductivity type, a buried channel 22 of a second conductivity type on the semiconductor layer 20, a first virtual gate 24 in the buried channel 22, the first virtual gate is switched... | 10/22/1996 |
| 5502318 | Bipolar gate charge coupled device with clocked virtual phase The charge coupled device cell has a semiconductor layer 20 of a first conductivity type, a buried channel 22 of a second conductivity type on the semiconductor layer 20, a first virtual gate 24 in the buried channel 22, the first virtual gate is switched... | 03/26/1996 |
| 5464996 | Process tracking bias generator for advanced lateral overflow antiblooming drain The process tracking bias generator for antiblooming structures includes a lateral overflow antiblooming drain and bias circuitry coupled to the antiblooming drain for automatically adjusting a bias for the antiblooming drain independent of process variat... | 11/07/1995 |
| 5461247 | Load resistance structure for source follower in charge transfer device Disclosed is a charge transfer device which has charge transfer registers, a floating diffusion layer for receiving a signal charge transferred from the charge transfer registers, a reset circuit for extracting a signal charge transferred from the floatin... | 10/24/1995 |
| 5453632 | Advanced lateral overflow drain antiblooming structure for virtual gate photosites The lateral overflow drain for virtual phase devices includes: a semiconductor region 72 of a first conductivity type; a drain region 24 of the first conductivity type formed in the semiconductor region 72; a threshold adjust region 22 formed in the semic... | 09/26/1995 |
| 5449931 | Charge coupled imaging device having multilayer gate electrode wiring In charge coupled imaging devices, a major portion of the photosensitive surface area is covered by electrodes with which the charge storage and the charge transport in the semiconductor body are controlled. These electrodes are preferably made of polycry... | 09/12/1995 |
| 5402459 | Frame transfer image sensor with electronic shutter An image sensing device with electronic shutter having a semiconductor substrate of a first conductivity type and a buried channel layer of a second conductivity type disposed on the substrate. Virtual phase electrodes in the buried channel layer having t... | 03/28/1995 |
| 5357548 | Reversible charge transfer and logic utilizing them Logically and thermodynamically reversible charge transfer (RCT) devices and logic are provided for conditionally transferring individually identifiable charge packets from one or more sources to one or more destinations under the control of one or more a... | 10/18/1994 |
| 5341008 | Bulk charge modulated device photocell with lateral charge drain The semiconductor image sensor element comprises a transistor gate potential well 102, a virtual potential well 100 adjacent the transistor gate potential well 102, a clear gate barrier 104 adjacent the virtual potential well 100, a clear drain 30 adjacen... | 08/23/1994 |
| 5286990 | Top buss virtual phase frame interline transfer CCD image sensor A virtual phase image sensor has majority carriers supplied to a virtual gate 24 by a conductor 32 overlying the image sensor, the virtual gate 24 and the conductor 32 each in contact with a conductive channel stop region 30.... | 02/15/1994 |
| 5182623 | Charge coupled device/charge super sweep image system and method for making Described is a new high performance CCD image sensor technology which can be used to build a versatile image sensor family with the sensors that have high resolution and high pixel density. The described sensor architectures are based on a new charge supe... | 01/26/1993 |
| 5151380 | Method of making top buss virtual phase frame interline transfer CCD image sensor In one embodiment of the invention, a method for fabricating a virtual phase image sensor is disclosed comprising the steps of forming a semiconductor substrate of a first conductivity type, forming a buried channel region of a second conductivity type in... | 09/29/1992 |
| 5130774 | Antiblooming structure for solid-state image sensor A solid-state image sensor includes a substrate of a semiconductor material of one conductivity type having a surface. A plurality of spaced, parallel CCDs are in the substrate at the surface. Each CCD includes a channel region of the opposite conductivit... | 07/14/1992 |
| 5077592 | Front-illuminated CCD with open pinned-phase region and two-phase transfer gate regions A front-illuminated CCD of relative high quantum efficiency (QE) and high charge transfer efficiency (CTE) utilizes an open-phase region for receiving photons and two-phase gate regions ($c;1 and $c;2) for transferring electron... | 12/31/1991 |
| 5073808 | Solid state semiconductor device A solid-state semiconductor device which is used as an image sensor or the like has a transfer electrodes which are formed over a semiconductor substrate through an insulating layer and consist of material having a relatively low conductivity wiring means... | 12/17/1991 |
| 4994405 | Area image sensor with transparent electrodes A method of making a two phase image sensor having transparent electrodes self-aligned to the barrier implants.... | 02/19/1991 |
| 4995061 | Two-phase CCD imager cell for TV interlace operation A CCD imager cell (36, 38) is formed at a face of a semiconductor substrate (10) and has first (36) and second (38) phase regions. A first clocked well (14) is provided for receiving charge integrated in the first phase region (36). A second clocked well ... | 02/19/1991 |
