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...Daniel Webster invented a "bull plow" to pull out tree stumps. It didn't catch on because it was huge and required four oxen to pull it!
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| Number | Title | Issue Date |
| 8044441 | Electrode patterning layer comprising polyamic acid or polyimide, and electronic device employing it Provided is an electrode patterning layer used for forming an electrode pattern of any optional shape depending on the difference in wettability with an electrode-forming solution, the electrode patterning layer employing a polyimide type resin which is highly relia... | 10/25/2011 |
| 7374174 | Small electrode for resistance variable devices A memory element comprising first and second electrodes is provided. The first electrode is tapered such that a first end of the first electrode is larger than a second end of the first electrode. A resistance variable material layer is located between the first and... | 05/20/2008 |
| 7348717 | Triode type field emission display with high resolution A triode type field emission display in accordance with the invention includes: a cathode electrode (12) formed on an insulation substrate (10); an insulation layer (13) formed on the cathode electrode; a gate electrode (14) formed on the... | 03/25/2008 |
| 7342263 | Circuit device A circuit device is provided which can be manufactured at reduced costs and which is highly reliable. The circuit device includes a Sensor area formed on part of a semiconductor substrate, a circuit area formed around the sensor area on the semiconductor substrate t... | 03/11/2008 |
| 7295742 | Optical element and method for producing the same An optical element is provided that includes a base substrate, a waveguide substrate, and a thin film layer that is provided between the base substrate and the waveguide substrate and that has a single-layer structure of a multilayer structure including a film conta... | 11/13/2007 |
| 7282448 | Substrate and method of forming substrate for fluid ejection device A method of forming an opening through a substrate having a first side and a second side opposite the first side includes forming spaced etch stops in the first side of the substrate, etching into the substrate from the second side toward the first side to the space... | 10/16/2007 |
| 7235824 | Active gate CCD image sensor An active gate includes a substrate of a first conductivity type, a channel of a second conductivity type formed in the substrate, a first gate region of the first conductivity type formed in a corresponding first portion of the channel, and a first contact connecte... | 06/26/2007 |
| 7203086 | Data reading method, data writing method, and semiconductor memory device In a data reading method, a first reading pulse is applied to a memory cell to generate a first signal corresponding to data stored in the memory cell, reference signal generating data corresponding to a high level side is written to the memory cell, a second readin... | 04/10/2007 |
| 7199038 | Method for fabricating semiconductor device According to an aspect of the invention, there is provided a method for fabricating a semiconductor device. The method may include forming at least one interconnection layer having a low dielectric constant insulating film and an interconnection buried in the low di... | 04/03/2007 |
| 7065873 | Recuperator assembly and procedures A construction of recuperator core segments is provided which insures proper assembly of the components of the recuperator core segment, and of a plurality of recuperator core segments. Each recuperator core segment must be constructed so as to prevent nesting of fi... | 06/27/2006 |
| 7030410 | Resistance variable device A method of precluding diffusion of a metal into adjacent chalcogenide material upon exposure to a quanta of actinic energy capable of causing diffusion of the metal into the chalcogenide material includes forming an actinic energy blocking material layer over the m... | 04/18/2006 |
| 7011148 | Heat exchanger with increased heat transfer efficiency and a low-cost method of forming the heat exchanger The efficiency of a heat exchanger is significantly improved by connecting walls to an air flow structure, which has first grooves formed in the top surface of the structure and second grooves formed in the bottom surface of the structure, that block off alternating... | 03/14/2006 |
| 6978912 | Heated dispenser A dispenser is provided that heats and dispenses a gel or lotion prior to the gel turning into lather. The dispenser can be selectively engaged with different sized and/or shaped cans. ... | 12/27/2005 |
| 6958499 | Triode field emission device having mesh gate and field emission display using the same Provided is a field emission device having a mesh gate. The object of this research is to provide a field emission display (FED) using a triode field emission device for preventing increase of operation voltage, and securing high concentration of electron beams. The... | 10/25/2005 |
| 6950590 | Transmission lines and components with wavelength reduction and shielding A slow-wave transmission line component having a slow-wave structure. The slow-wave structure includes a floating shield employing one of electric and magnetic induction to set a potential on floating strips of said floating shield to about 0, thereby reducing losse... | 09/27/2005 |
| 6908868 | Gas passivation on nitride encapsulated devices A method for passivating at least interfaces between structures formed from a conductive or semiconductive material and adjacent dielectric structures so as to reduce a concentration of dangling silicon bonds at these interfaces and to reduce or eliminate the occurr... | 06/21/2005 |
| 6833559 | Non-volatile resistance variable device A method of precluding diffusion of a metal into adjacent chalcogenide material upon exposure to a quanta of actinic energy capable of causing diffusion of the metal into the chalcogenide material includes forming an actinic energy blocking material layer over the m... | 12/21/2004 |
| 6784471 | Semiconductor device and manufacturing method thereof A semiconductor device capable of reducing manufacturing cost and on-state resistance is provided by selectively disposing a plurality of active regions (AR) on a main surface of a stainless steel substrate (1) and disposing a trench gate (7) so as to ... | 08/31/2004 |
| 6727536 | Ferroelectric memory device A ferroelectric memory device of the present invention includes a memory cell array in which memory cells are arranged in a matrix having first signal electrodes, second signal electrodes arranged in a direction intersecting the first signal electrodes, and a ferroe... | 04/27/2004 |
| 6710388 | Ferroelectric transistor, use thereof in a memory cell configuration and method of producing the ferroelectric transistor A ferroelectric transistor suitable as a memory element has a first gate intermediate layer and a first gate electrode disposed on the surface of a semiconductor substrate and disposed between source/drain regions. The first gate intermediate layer contains at least... | 03/23/2004 |
| 6657518 | Notch filter circuit apparatus According to one embodiment of the invention, a notch filter circuit includes a coplanar waveguide that includes a silicon substrate and at least one shunt stub bent at an angle to the coplanar waveguide. The notch filter circuit also includes at least on... | 12/02/2003 |
| 6452464 | Backgate heterojunction acoustic charge transport device An acoustic charge transport device is formed by a process which introduces a process dependent variation in charge carrier density within the device. The acoustic charge transport device includes a transport channel operable to carry charge carriers in r... | 09/17/2002 |
| 6403995 | Semiconductor digital loudspeaker array A high performance unary digital loudspeaker system is disclosed; providing cost-effective and efficient performance, and providing the option to integrate multiple speaker elements or other related circuitry, and comprising a semiconductor substrate (102... | 06/11/2002 |
| 6300660 | Bipolar transistor that can be fabricated in CMOS A variable conductance device having a first source region and a first drain region in a semiconductor substrate. A first channel region connects the first source and the first drain regions. A first resistive layer overlies the first channel region and h... | 10/09/2001 |
| 6111279 | CCD type solid state image pick-up device A solid state image pick-up device is disclosed in which potential wells formed between adjacent ones of charge transfer electrodes of a vertical charge transfer portion thereof, formed between adjacent ones of charge transfer electrodes of a horizontal c... | 08/29/2000 |
| 6018170 | Single-layer-electrode type two-phase charge coupled device having smooth charge transfer In a charge coupled device, trap levels formed by insulating layers or floating electrodes are formed on a semiconductor layer or a semiconductor substrate. Stationary charges are trapped in some of the trap levels or floating electrodes. The charge trans... | 01/25/2000 |
| 5965910 | Large cell charge coupled device for spectroscopy The present invention is directed to an improved CCD utilizing a potential gradient along the lengths of the various channels of the CCD during charge transfer to cause generated electrical charge to migrate along the length of the channel to a summing we... | 10/12/1999 |
| 5910677 | Semiconductor device having a protection circuit Protection circuits for preventing an internal circuit on a semiconductor substrate from destroying due to an excess voltage are formed on the output end and input end of an internal circuit. The protection circuit on the input end has a gate electrode co... | 06/08/1999 |
| 5892251 | Apparatus for transferring electric charges A charge transferring apparatus comprising, e.g., a buried type charge coupled device in which a pair of transfer electrodes located at the most downstream point of a charge transfer direction is driven by a drive pulse other than that for any other pair ... | 04/06/1999 |
| 5883419 | Ultra-thin MO-C film transistor A transistor in accordance with the invention comprises an ultra-thin Mo--C film functioning as a channel for an electron flow with two ends of the thin metal film functioning as source and drain terminals of the transistor, respectively; a piezoelectric ... | 03/16/1999 |
| 5760430 | Charge transfer device and solid-state imaging apparatus using the same device A charge transfer device is disclosed in which the number of transfer clocks can be decreased, and also, power consumption, the heating amount and parasitic emissions are also reduced. Three groups of electrodes are repeatedly disposed in an alternating s... | 06/02/1998 |
| 5698888 | Compound semiconductor field effect transistor free from piezoelectric effects regardless of orientation of gate electrode A metal-semiconductor type field effect transistor has a Y-letter shaped gate electrode standing on an active layer, and the Y-letter shaped gate electrode prevents piezoelectric charges induced beneath both ends of the wing portions thereof from undesira... | 12/16/1997 |
| 5686742 | CCD type solid state image pickup device having high charge transfer efficiency In a CCD type solid state image pickup device including two-dimensionally arranged photo/electro conversion portions, a plurality of vertical shift registers each connected to one column of the photo/electro conversion portions, and a horizontal transfer ... | 11/11/1997 |
| 5612555 | Full frame solid-state image sensor with altered accumulation potential and method for forming same In accordance with the invention, a full frame solid-state image sensor of altered accumulation potential comprises a substrate that includes a semiconductor of one conductivity type and has a surface at which is situated a photodetector that comprises a ... | 03/18/1997 |
| 5442192 | Heterostructure electron emitter utilizing a quantum well A heterostructure electron emitter including a substrate having a surface with a predetermined potential barrier and a quantum well formed in the substrate adjacent the surface. Contacts are positioned on the substrate for coupling free electrons to the s... | 08/15/1995 |
| 5420448 | Complementary acoustic charge transport device and method A complementary acoustic charge transport circuit element comprises first and second buried channels. Each of the channels is comprised of a piezoelectric semiconductor and each channel has a source through which charge is injected and a drain through whi... | 05/30/1995 |
| 5416344 | Solid state imaging device and method for producing the same A solid state imaging device which reduces the occurrence of crosstalk between a plurality of picture elements arranged in a linear or matrix form. The solid state imaging device includes a plurality of photosensitive cells formed on a first principal sur... | 05/16/1995 |
| 5414467 | Charge transfer device wherein the time constant between the clock means and the transfer gate electrodes are substantially equal The present invention is directed to a charge transfer device formed on a semiconductor substrate which comprises a channel region formed on the semiconductor substrate, at least a set of transfer gate electrodes formed adjacent to each other and insulate... | 05/09/1995 |
| 5389806 | Apparatus for reducing heterostructure acoustic charge transport device saw drive power requirements A HACT device employing a thin-film overlay of a more strongly piezoelectric material can operate as a delay line and as a tapped delay line, or transversal filter, while requiring less total power for the SAW clock signal. The increased electrical potent... | 02/14/1995 |
| 5309004 | Heterostructure acoustic charge transport device having electron and hole transport A novel heterostructure acoustic charge transport (HACT) device is disclosed which displays both electron and hole transport. The device includes a transducer fabricated on a substrate structure that launches surface acoustic waves. An optional reflector ... | 05/03/1994 |
