Class 257/241 - Multiple channels (e.g., converging or diverging or parallel channels)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the charge transfer device contains
No. of patents: 249
Last issue date: 02/14/2012

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Number	Title	Issue Date
8115238	Memory device employing magnetic domain wall movement Provided is a memory device employing magnetic domain wall movement. The memory device includes a writing track and a column structure. The writing track forms magnetic domains that have predetermined magnetization directions. The column structure is formed on the w...	02/14/2012
7919794	Memory cell and method of forming a magnetic tunnel junction (MTJ) of a memory cell A memory including a memory cell and method for producing the memory cell are disclosed. The memory includes a substrate in a first plane. A first metal connection extending in a second plane is provided. The second plane is substantially perpendicular to the first ...	04/05/2011
7825439	Semiconductor memory A semiconductor memory according to an example of the invention includes active areas, and element isolation areas which isolate the active areas. The active areas and the element isolation areas are arranged alternately in a first direction. An n-th (n is odd numbe...	11/02/2010
7768041	Multiple conduction state devices having differently stressed liners A field effect transistor (“FET”) is provided which includes an active semiconductor region including a channel region, a first source-drain region and a second source-drain region. A major surface of the active semiconductor region is divided into a mutually ex...	08/03/2010
7719038	Semiconductor device having multi-channel and method of fabricating the same An embodiment of the present invention relates to a semiconductor device having a multi-channel and a method of fabricating the same. In an aspect, the semiconductor device includes a semiconductor substrate in which isolation layers are formed, a plurality of trenc...	05/18/2010
7442971	Self-biasing transistor structure and an SRAM cell having less than six transistors By providing a self-biasing semiconductor switch, an SRAM cell having a reduced number of individual active components may be realized. In particular embodiments, the self-biasing semiconductor device may be provided in the form of a double channel field effect tran...	10/28/2008
7436384	Data driving apparatus and method for liquid crystal display A data driving apparatus for a liquid crystal display includes a plurality of data driving integrated circuits adjacent to a liquid crystal display panel for converting input pixel data into pixel voltage signals, one or more multiplexor arrays provided adjacent to ...	10/14/2008
7417269	Magnetic impedance device, sensor apparatus using the same and method for manufacturing the same A magnetic sensor apparatus includes a semiconductor substrate and a magnetic impedance device for detecting a magnetic field. The magnetic impedance device is disposed on the substrate. The magnetic sensor apparatus has minimum size and is made with low manufacturi...	08/26/2008
7355885	Semiconductor memory device with magnetoresistance elements and method of writing date into the same A semiconductor memory device includes memory cells, first wirings, a first current driver circuit, and a second current driver circuit. The memory cell includes a magneto-resistive element having a first ferromagnetic film, an insulating film formed on the first fe...	04/08/2008
7345331	Ferroelectric capacitor circuit for sensing hydrogen gas A ferroelectric capacitor circuit for sensing hydrogen gas having a closed integrated circuit package, a ferroelectric capacitor within the closed integrated circuit package, the ferroelectric capacitor having a bismuth oxide based ferroelectric layer being able to ...	03/18/2008
7329926	Semiconductor device with constricted current passage A semiconductor device including a gate located over a semiconductor substrate and a source/drain region located adjacent the gate. The source/drain region is bounded by an isolation structure that includes a constricted current passage between the gate and the sour...	02/12/2008
7274052	CCD charge-splitter adjustment by static charge gradient A charge splitter for separating an incoming charge packet into two outgoing packets while the charge is in a static state, i.e., not while it is flowing down a channel or over a barrier. A splitting gate may have a biasing charge impressed upon it, such as via the ...	09/25/2007
7274051	Field effect transistor (FET) having wire channels and method of fabricating the same In a field effect transistor (FET), and a method of fabricating the same, the FET includes a semiconductor substrate, source and drain regions formed on the semiconductor substrate, a plurality of wire channels electrically connecting the source and drain regions, t...	09/25/2007
7229884	Phosphorous doping methods of manufacturing field effect transistors having multiple stacked channels Integrated circuit field effect transistors are manufactured by forming a pre-active pattern on a surface of a substrate, while refraining from doping the pre-active pattern with phosphorus. The pre-active pattern includes a series of interchannel layers and channel...	06/12/2007
7226817	Method of manufacturing A method of efficiently forming a circuit using a thin film transistor with a semiconductor layer in which preferable crystallinity is obtained is provided. A location on which stress concentrates according to crystallization of a semiconductor layer formed on a sub...	06/05/2007
7224007	Multi-channel transistor with tunable hot carrier effect A multiple channel transistor provides a transistor with an improved drive current and speed by using tunable hot carrier effects. A thin gate oxide has a carrier confinement layer formed on top thereof. Holes produced by hot carrier effects are retained by the carr...	05/29/2007
7220381	Method for high pressure treatment of substances under controlled temperature conditions A product carrier for use in pressure processing substances is substantially fluidically closed, and is insulated, to prevent heat transfer from the product being treated to the cooler wall of the pressure vessel. The insulating material has compression heating prop...	05/22/2007
7199409	Device for subtracting or adding charge in a charge-coupled device The present invention provides an apparatus for adding or subtracting an amount charge to or from a charge packet in a CCD as the packet traverses the CCD. The apparatus uses a “wire transfer” device structure to perform the addition or subtraction of charge dur...	04/03/2007
7193252	Solid-state imaging device and solid-state imaging device array In a photosensitive part 10, arranged from pixels A aligned in n rows and m columns, supply wiring lines 13a and 13b, which are electrically connected and apply transfer voltages to transfer electrodes 12a to 12	03/20/2007
7187016	Semiconductor device In a semiconductor device an electric field is controlled in direction or angle relative to a gate, or a channel to adjust a gain coefficient of a transistor. In some embodiments, there are provided a first gate forming a channel region in a rectangle or a parallelo...	03/06/2007
7157754	Solid-state imaging device and interline transfer CCD image sensor A high-performance solid-state imaging device is provided. The solid-state imaging device includes: a plurality of pixel cells; and a driving unit. Each of the plurality of pixel cells includes: a photodiode that converts incident light into a signal charge and stor...	01/02/2007
7154134	Adjustable CCD charge splitter An adjustable charge coupled device (CCD) charge splitter includes a channel control structure and an associated plurality of output channels. Control signals applied to the channel control structure determine an amount of charge, which passes into each one of the p...	12/26/2006
7141838	Buried word line memory integrated circuit system An integrated circuit system includes providing a semiconductor substrate and forming buried word lines in the semiconductor substrate with the buried word lines including vertical charge-trapping dielectric layers. The system further includes forming bit lines furt...	11/28/2006
7141837	High-density MOS transistor A MOS transistor formed in a silicon substrate comprising an active area surrounded with an insulating wall, a first conductive strip covering a central strip of the active area, one or several second conductive strips placed in the active area right above the first...	11/28/2006
7132690	Multi-channel type thin film transistor and method of fabricating the same A multi-channel type thin film transistor includes a gate electrode over a substrate extending along a first direction, a plurality of active layers parallel to and spaced apart from each other extending along a second direction crossing the first direction, and sou...	11/07/2006
7116907	Acousto-optical tunable filters cascaded together A configuration of acousto-optical tunable filters (AOTF) having stable output characteristics so that the output does not significantly vary with time. The configuration includes a plurality of AOTFs cascaded together. Each AOTF generates a surface acoustic wave in...	10/03/2006
7112832	Transistor having multiple channels A transistor (10) overlies a substrate (12) and has a plurality of overlying channels (72, 74, 76) that are formed in a stacked arrangement. A continuous gate (60) material surrounds each of the channels. Each of the channels is coupled t...	09/26/2006
7109516	Strained-semiconductor-on-insulator finFET device structures The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication. ...	09/19/2006
7105876	Reticulated gate CCD pixel with diagonal strapping A sensor includes an array of pixels organized in rows and columns and a plurality of metal busses overlaying the array of pixels. A first column of pixels includes a proximal set of first pixels and a distal set of first pixels separated by a first jog region. A se...	09/12/2006
7101740	Electronic devices comprising bottom-gate TFTs and their manufacture A method of manufacturing an electronic device comprising a bottom-gate TFT (12) is provided, the method comprising the steps of: forming a doped amorphous silicon gate layer (26′) on a substrate, the gate layer defining a gate (26), forming a...	09/05/2006
7092021	Frame shuttering scheme for increased frame rate A frame shutter apparatus comprising a controller for controlling multiple groups of pixels and for reading out values corresponding to the charge collected by different groups of pixels at different times. A method of reading out multiple groups of pixels is provid...	08/15/2006
7034346	Semiconductor device and method for manufacturing the same A semiconductor device according to an embodiment of the present invention has a gate electrode which is formed on a semiconductor substrate via a gate insulating film, and which has a slit portion; side wall films formed at both side faces of the gate electrode and...	04/25/2006
7015838	Programmable serializing data path A programmable serial data path includes a programmable timing circuit and a parallel to serial module. The programmable timing circuit is operably coupled to generate a first plurality of timing signals when width of parallel input data is of a first multiple and t...	03/21/2006
7002713	Image processing apparatus An image processing apparatus capable of acquiring a high resolution image without a reduction in sensitivity includes a plurality of sensor chips connected to one another, each sensor chip including a first pixel row and a second pixel row, which are formed on the ...	02/21/2006
6978912	Heated dispenser A dispenser is provided that heats and dispenses a gel or lotion prior to the gel turning into lather. The dispenser can be selectively engaged with different sized and/or shaped cans. ...	12/27/2005
6888182	Thin film transistor, method for manufacturing same, and liquid crystal display device using same A thin film transistor of the present invention is provided with (i) a plurality of divided channel regions formed under a gate electrode, and (ii) divided source regions and divided drain regions between which each of the divided channel regions is sandwiched, the ...	05/03/2005
6864507	MISFET P-type active region 12; n-type source/drain regions 13a and 13b; gate insulating film 14 made of a thermal oxide film; gate electrode 15; source/drain electrodes 16a and 16b, are provided ...	03/08/2005
6831350	Semiconductor structure with different lattice constant materials and method for forming the same A semiconductor structure includes a substrate comprising a first relaxed semiconductor material with a first lattice constant. A semiconductor device layer overlies the substrate, wherein the semiconductor device layer includes a second relaxed semiconductor materi...	12/14/2004
6794692	Solid-state image pick-up device In a solid-state image pick-up device of FIG. 1, a plurality of photoelectric converting devices 100 having almost square light receiving regions are provided like a tetragonal grid over the surface of a semiconductor substrate and a plurality of verti...	09/21/2004
6734475	Charge pump device P type well regions 31 and 32 are formed in N type well regions 21 and 22 respectively. The N type well regions 21 and 22 are formed separately each other. Charge transfer MOS transistors M2 and M3 are formed i...	05/11/2004

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Class 257/241 - Multiple channels (e.g., converging or diverging or parallel channels)