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| Number | Title | Issue Date |
| 7884398 | Floating gate field effect transistors for chemical and/or biological sensing Specific ionic interactions with a sensing material that is electrically coupled with the floating gate of a floating gate-based ion sensitive field effect transistor (FGISFET) may be used to sense a target material. For example, an FGISFET can use (e.g., previously... | 02/08/2011 |
| 7329912 | Device and methods for CMOS image sensor having borderless contact A photodiode device including a well located in a substrate, a floating node located in the well and shallow trench isolation (STI) regions located over and laterally opposing the floating node. A borderless contact buffer layer is located over at least the floating... | 02/12/2008 |
| 7289553 | Isolator and a modem device using the isolator A communication system is provided including a transceiver and an application controller to transmit and receive signals through the transceiver. An isolator which insulates and separates the transceiver and application controller includes primary and secondary side... | 10/30/2007 |
| 7274052 | CCD charge-splitter adjustment by static charge gradient A charge splitter for separating an incoming charge packet into two outgoing packets while the charge is in a static state, i.e., not while it is flowing down a channel or over a barrier. A splitting gate may have a biasing charge impressed upon it, such as via the ... | 09/25/2007 |
| 7236196 | Solid-state image pickup apparatus for reading out image signals with pixels reduced in a horizontal direction and a signal reading method for the same A solid-state image pickup apparatus includes a color filter having an R (red), G (green) and B (blue) vertical stripe pattern. During preliminary pickup, a signal feeding section feeds particular drive signals for reading signal charges out of only odd-numbered col... | 06/26/2007 |
| 7205591 | Pixel sensor cell having reduced pinning layer barrier potential and method thereof A pixel sensor cell structure and method of manufacture. The pixel cell comprises a doped layer formed adjacent to a first side of a transfer gate structure for coupling a collection well region and a channel region. Potential barrier interference to charge transfer... | 04/17/2007 |
| 7199409 | Device for subtracting or adding charge in a charge-coupled device The present invention provides an apparatus for adding or subtracting an amount charge to or from a charge packet in a CCD as the packet traverses the CCD. The apparatus uses a “wire transfer” device structure to perform the addition or subtraction of charge dur... | 04/03/2007 |
| 7084973 | Variable binning CCD for spectroscopy An apparatus includes a source of spectral light indicative of a sample to be measured, a camera to sense a spectrum, and a chromatic dispersion device to spatially separate light from the sample to be measured into the spectrum. The camera includes a sensor and con... | 08/01/2006 |
| 7046283 | Arrangements of clock line drivers A circuit includes a circuit chip and a plurality of clock drivers external to the circuit chip. The circuit chip includes a plurality of isolated clocking subunits and a corresponding plurality of terminals. Each clocking subunit is electrically isolated from any o... | 05/16/2006 |
| 7026690 | Memory devices and electronic systems comprising integrated bipolar and FET devices The invention includes BIFETRAM devices. Such devices comprise a bipolar transistor in combination with a field effect transistor (FET) in a three-dimensional stacked configuration. The memory devices can be incorporated within semiconductor-on-insulator (SOI) const... | 04/11/2006 |
| 7022287 | Single particle electrochemical sensors and methods of utilization The present invention discloses an electrochemical device for detecting single particles, and methods for using such a device to achieve high sensitivity for detecting particles such as bacteria, viruses, aggregates, immuno-complexes, molecules, or ionic species. Th... | 04/04/2006 |
| 7015520 | Charge-coupled devices having efficient charge transfer rates A camera includes a charge-coupled device having a substrate or well of a first conductivity type; a buried channel of a second conductivity type; a dielectric disposed on the substrate; six gates disposed on the dielectric that are space oriented sequentially 1 | 03/21/2006 |
| 7009646 | Three-sided buttable CMOS image sensor An image sensor chip is formed with the image sensor abutting up to three edges of the chip. Certain parts of the row logic which are required to be adjacent to each of the rows are placed into the array, in place of certain pixels of the array. Those missing pixels... | 03/07/2006 |
| 7003068 | Device for subtracting or adding a constant amount of charge in a charge-coupled device at high operating frequencies A circuit for adding or subtracting an amount of charge from a charge sample, such as in a Charge Coupled Device (CCD), by portioning and pipelining the processing stages, to avoid introducing a memory effect. The operation, such as subtraction, is split into multip... | 02/21/2006 |
| 7002631 | Image pickup apparatus including compensation responsive to phased drive of charge transfer gates In a solid state image pick-up device, charge transfer gate pulse timing for different phases is intentionally offset resulting in different exposure times for different image element subsets of the image pick-up device. The amount of added signal compensation for a... | 02/21/2006 |
| 6958499 | Triode field emission device having mesh gate and field emission display using the same Provided is a field emission device having a mesh gate. The object of this research is to provide a field emission display (FED) using a triode field emission device for preventing increase of operation voltage, and securing high concentration of electron beams. The... | 10/25/2005 |
| 6862333 | CMD and CMD-carrying CCD device This invention controls the signal amplification rate in a simple way with high precision in a CMD or CMD-carrying CCD device. CMD 12 has plural sections, such as M sections (U1-UM), each of which is a CMD unit U that can perform a charge mu... | 03/01/2005 |
| 6815791 | Buried, fully depletable, high fill factor photodiodes A semiconductor detector of electromagnetic radiation which utilizes a dual-purpose electrode which extends significantly beyond the edge of a photodiode. This configuration reduces the sensitivity of device performance on small misalignments between manufacturing s... | 11/09/2004 |
| 6780666 | Imager photo diode capacitor structure with reduced process variation sensitivity A pixel cell having two capacitors connected in series where each capacitor has a capacitance approximating that at of the periphery capacitors and such that the effective capacitance of the series capacitors is smaller than that of each of the periphery capacitors.... | 08/24/2004 |
| 6777911 | Charge transformer and method of implementation A charge transformer is disclosed for coupling charge from a first device to a charge sensitive device, such as a single electron transistor. The charge transformer includes a plurality of capacitors that are alternatively connected in parallel and series such that ... | 08/17/2004 |
| 6683337 | Dynamic memory based on single electron storage A method for forming edge-defined structures with sub-lithographic dimensions which are used to further form conduction channels and/or storage structures in memory cells. Sacrificial silicon nitride islands are deposited at low temperatures and then patt... | 01/27/2004 |
| 6653740 | Vertical conduction flip-chip device with bump contacts on single surface A flip-chip MOSFET structure has a vertical conduction semiconductor die in which the lower layer of the die is connected to a drain electrode on the top of the die by a diffusion sinker or conductive electrode. The source and gate electrodes are also for... | 11/25/2003 |
| 6586784 | Accumulation mode clocking of a charge-coupled device A method for reducing dark current within a charge coupled device includes the steps of providing three or more phases of gates separated by an insulating layer from a buried channel of the first conductivity type in a well or substrate of the second cond... | 07/01/2003 |
| 6580106 | CMOS image sensor with complete pixel reset without kTC noise generation In an image sensing array, the structure of the image sensor pixel is based on a vertical punch through transistor with a junction gate surrounding its source and connected to it, the junction gate being further surrounded by an MOS gate. The new pixel ha... | 06/17/2003 |
| 6512254 | Solid-state image pickup device In a solid-state image pickup device, a transfer register 10 is provided with an overflow control gate OFCG and an overflow drain OFD, and the gate electrode 12A of the overflow control gate OFCG is formed so as to be superposed on the lower-layer electro... | 01/28/2003 |
| 6510193 | Charge transfer device and a semiconductor circuit including the device By providing a semiconductor device including a charge transfer channel to one end of which electric charges supplied from a charge supply unit are input, and which includes a plurality of branching regions at an intermediate portion, a plurality of gate ... | 01/21/2003 |
| 6489179 | Process for fabricating a charge coupled device A monolithic three dimensional charged coupled device (3D-CCD) which utilizes the entire bulk of the semiconductor for charge generation, storage, and transfer. The 3D-CCD provides a vast improvement of current CCD architectures that use only the surface ... | 12/03/2002 |
| 6465819 | Solid state imaging apparatus with transistors having different gate insulating film thickness and manufacturing method for the same A solid state imaging apparatus includes a detection capacitor storing a signal charge, and an output amplifier including a plurality of transistors, and outputting the signal charge stored in the detection capacitor as a voltage signal. A gate electrode ... | 10/15/2002 |
| 6365950 | CMOS active pixel sensor The present invention relates to a CMOS active pixel sensor which includes a compensation circuit capable of compensating a lowered pixel voltage output due to leakage current of a photodiode. The CMOS active pixel sensor having a light sensing unit for g... | 04/02/2002 |
| 6281142 | Dielectric cure for reducing oxygen vacancies A unique electrochemical process fills oxygen vacancies in dielectrics while reducing oxidation of nearby electrodes and conductors. Preferably, an electromagnetic field or bias is applied to a dielectric. The bias causes oxygen vacancies in the dielectri... | 08/28/2001 |
| 6252265 | Single-layer-electrode type two-phase charge coupled device having smooth charge transfer In a charge coupled device, trap levels formed by insulating layers or floating electrodes are formed on a semiconductor layer or a semiconductor substrate. Stationary charges are trapped in some of the trap levels or floating electrodes. The charge trans... | 06/26/2001 |
| 6172381 | Source/drain junction areas self aligned between a sidewall spacer and an etched lateral sidewall An integrated circuit fabrication process is provided in which an elevated doped polysilicon structure may be formed and isolated from another polysilicon structure lying in the same elevated plane. The elevated structure may serve as a junction area of a... | 01/09/2001 |
| 6157053 | Charge transfer device and method of driving the same There is provided a charge transfer device including (a) a charge transfer channel for transferring signal charges therethrough, (b) a floating diffusion region for accumulating therein charges transferred from the charge transfer channel, (c) a field eff... | 12/05/2000 |
| 6133596 | Near complete charge transfer device A charge transfer structure (30) includes a substrate comprised of semiconductor material and, coupled to a surface of the substrate, a plurality of serially coupled devices each having a gate terminal. The plurality of serially coupled devices include a ... | 10/17/2000 |
| 6100552 | Multi-tapped bi-directional CCD readout register A bi-directional multi-tapped CCD sensor readout structure includes a well formed in a substrate, a channel formed in the well defining a channel direction, and a clocking structure disposed over the channel and oriented transversely to the channel direct... | 08/08/2000 |
| 6087686 | Pixel with buried channel spill well and transfer gate a pixel is formed in a substrate having a first conductivity type, the pixel being coupled to a register for output. The pixel includes a pixel channel of a second conductivity type formed in the substrate, a transfer gate electrode, a storage gate electr... | 07/11/2000 |
| 6026964 | Active pixel sensor cell and method of using The present invention is a active pixel sensor cell and method of making and using the same. The active pixel sensor cell approximately doubles the available signal for a given quanta of light. The device of the present invention utilizes the holes produc... | 02/22/2000 |
| 5990503 | Selectable resolution CCD sensor A CCD sensor includes a readout register formed in substrate, the readout register including a channel, a bus structure and a connection structure. The bus structure includes plural spaced element sets, each element set including a first clock conductor. ... | 11/23/1999 |
| 5986296 | CCD type semiconductor device The disclosure relates to charge-coupled devices taking the form of shift registers and, more specifically, to those working in the MPP (Multi-Pinned Phase) mode, i.e. with high negative polarisation of the electrodes during the phases of waiting or of in... | 11/16/1999 |
| 5965910 | Large cell charge coupled device for spectroscopy The present invention is directed to an improved CCD utilizing a potential gradient along the lengths of the various channels of the CCD during charge transfer to cause generated electrical charge to migrate along the length of the channel to a summing we... | 10/12/1999 |
