Did You Know...
...that one person who claimed to be the inventor of the television is Russian emigre Vladimir Zworykin? In 1929 David Sarnoff, founder of RCA, asked Zworykin what it would take to develop TV for commercial use. He said: a year and a half and $100,000. In reality, it took 20 years and $50 million! Before his death in 1982 at the age of 92, Zworykin said of his invention: "The technique is wonderful. It is beyond my expectations. But the programs! I would never let my children even come close to this thing."
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| Number | Title | Issue Date |
| 8183604 | Solid state image pickup device inducing an amplifying MOS transistor having particular conductivity type semiconductor layers, and camera using the same device To provide an amplification type solid state image pickup device enabling lower noise, higher gain, and higher sensitivity than any conventional amplification type solid state image pickup device. A solid state image pickup device according to the present invention ... | 05/22/2012 |
| 8120069 | Stratified photodiode for high resolution CMOS image sensor implemented with STI technology A stratified photodiode for high resolution CMOS image sensors implemented with STI technology is provided. The photodiode includes a semi-conductive layer of a first conductivity type, multiple doping regions of a second conductivity type, multiple doping regions o... | 02/21/2012 |
| 8089106 | Image sensor and method for manufacturing the same Embodiments relate to an image sensor. According to embodiments, an image sensor may include a metal interconnection, readout circuitry, a first substrate, an image sensing device, and a second conduction type interfacial layer. The metal interconnection and the rea... | 01/03/2012 |
| 8044440 | Semiconductor device and method of manufacturing the same The invention is directed to providing a smaller semiconductor device formed as an optical sensor including a light receiving portion and a light emitting portion. A light receiving portion and a light emitting portion are disposed on a front surface of a semiconduc... | 10/25/2011 |
| 8039875 | Structure for pixel sensor cell that collects electrons and holes The present invention relates to a design structure for a pixel sensor cell. The pixel sensor cell approximately doubles the available signal for a given quanta of light. A design structure for a pixel sensor cell having reduced complexity includes an n-type collect... | 10/18/2011 |
| 8026538 | Photo-detecting apparatus and photo-detecting method A photo-detecting apparatus includes a photodiode that coverts light into electricity, a reverse-voltage switching unit that switches a reverse voltage to be applied to the photodiode, a current-difference detecting unit that detects a change in an output current of... | 09/27/2011 |
| 7999291 | Method of manufacturing solid state imaging device, solid state imaging device, and camera using solid state imaging device A method of manufacturing a solid state imaging device having a photo-electric conversion portion array and a transfer electrode array, these arrays being provided in parallel to each other, upper surfaces and side wall surfaces of the transfer electrode array being... | 08/16/2011 |
| 7977711 | Pixel sensor cell for collecting electrons and holes The present invention is a pixel sensor cell and method of making the same. The pixel sensor cell approximately doubles the available signal for a given quanta of light. The device of the present invention utilizes the holes produced by impinging photons in a pixel ... | 07/12/2011 |
| 7973342 | CMOS image sensor and method for manufacturing the same Disclosed are a CMOS image sensor and a method for manufacturing the same, capable of improving the characteristics of the image sensor by increasing junction capacitance of a floating diffusion area. The CMOS image sensor generally includes a photodiode and a plura... | 07/05/2011 |
| 7939860 | Solid-state imaging device Disclosed herein is a solid-state imaging device including: a semiconductor substrate; a sensor of impurity diffusion layer formed on the surface layer of said semiconductor substrate; a negative charge accumulation layer formed on said sensor from an insulating mat... | 05/10/2011 |
| 7935988 | Method of manufacturing solid state imaging device, solid state imaging device, and camera using solid state imaging device A method of manufacturing a solid state imaging device having a photo-electric conversion portion array and a transfer electrode array, these arrays being provided in parallel to each other, upper surfaces and side wall surfaces of the transfer electrode array being... | 05/03/2011 |
| 7932546 | Image sensor having microlenses and high photosensitivity The method for manufacturing a CMOS image sensor is employed to prevent bridge phenomenon between adjacent microlenses by employing openings between the microlenses. The method includes the steps of: preparing a semiconductor substrate including isolation regions an... | 04/26/2011 |
| 7928478 | Image sensor with improved color crosstalk An image sensor comprises a substrate of a first conductivity type. First and second pixels are arrayed over the substrate. A potential barrier is formed in a region of the substrate corresponding to the first pixel but not in a region of the substrate corresponding... | 04/19/2011 |
| 7923758 | Method and apparatus for producing gallium arsenide and silicon composites and devices incorporating same The present invention includes methods for producing GaAs/Si composites, GaAs/Si composites, apparatus for preparing GaAs/Si composites, and a variety of electronic and photoelectric circuits and devices incorporating GaAs/Si composites of the present invention.... | 04/12/2011 |
| 7915649 | Light emitting display device and method of fabricating the same A light emitting display device includes a light emitting diode and a thin film transistor on a substrate, the light emitting diode and thin film transistor being electrically coupled to each other, and a photo diode on the substrate, the photo diode including an N-... | 03/29/2011 |
| 7825438 | CMOS image sensor having drive transistor with increased gate surface area and method of manufacturing the same A CMOS image sensor cell includes a semiconductor active region of first conductivity type having a surface thereon and a P-N junction photodiode in the active region. A drive transistor is also provided in the semiconductor active region. The drive transistor has a... | 11/02/2010 |
| 7763913 | Imaging method, apparatus, and system providing improved imager quantum efficiency A method, apparatus, and system that provides one or more charge collecting protection regions in a pixel array, each formed below a storage region of a pixel cell, but not below at least one photosensor of one pixel of the array. The storage region includes a float... | 07/27/2010 |
| 7759709 | Solid-state imaging device and imaging apparatus A solid-state imaging device includes: an imaging region including a plurality of light-receiving parts; a first transfer section provided on the imaging region and transferring, in a first direction, signals generated by the light-receiving parts; a second transfer... | 07/20/2010 |
| 7741660 | Pixel and imager device having high-k dielectrics in isolation structures An imager device that has an isolation structure such that pinned photodiode characteristics are maintained without increasing doping levels. The invention provides an isolation structure to maintain pinned photodiode characteristics without increasing doping levels... | 06/22/2010 |
| 7732841 | Pixel sensor cell for collecting electrons and holes The present invention is a pixel sensor cell and method of making the same. The pixel sensor cell approximately doubles the available signal for a given quanta of light. The device of the present invention utilizes the holes produced by impinging photons in a pixel ... | 06/08/2010 |
| 7705375 | Solid state imaging device A solid state imaging device includes: a plurality of photoelectric conversion portions formed in a substrate in a matrix arrangement to convert light incident on light receiving portions into electricity; a plurality of vertical transfer registers for reading charg... | 04/27/2010 |
| 7671385 | Image sensor and fabrication method thereof An image sensor contains a semiconductor substrate, a plurality of pixels defined on the semiconductor substrate, a photo conductive layer and a transparent conductive layer formed on the pixel electrodes of the pixels in order, and a shield device positioned betwee... | 03/02/2010 |
| 7550792 | Solid-state imaging device and manufacturing method thereof A solid-state imaging device, includes: a substrate where a region of a first conductivity type is formed on at least a portion of a surface thereof; a region of a second conductivity type formed on at least a portion of a surface of the region of the first conducti... | 06/23/2009 |
| 7521738 | Image sensor pixel having photodiode with multi-dopant implantation An active pixel using a photodiode with multiple species of N type dopants is disclosed. The pixel comprises a photodiode formed in a semiconductor substrate. The photodiode is an N− region formed within a P-type region. The N− region is fo... | 04/21/2009 |
| 7521737 | Light-sensing device A method of fabricating light-sensing devices including photodiodes monolithically integrated with CMOS devices. Several types of photodiode devices (PIN, HIP) are expitaxially grown in one single step on active areas implanted in a common semiconductor substrate, t... | 04/21/2009 |
| 7514729 | Solid-state imaging device and method of driving the same A solid-state imaging device includes an N-type semiconductor substrate, an N-type impurity region provided in the surficial portion of the N-type semiconductor substrate, a photo-electric conversion unit formed in the N-type impurity region, a charge accumulation u... | 04/07/2009 |
| 7488997 | Solid-state imaging device and method for driving the same A solid-state imaging device including a plurality of unit pixels, each of which includes: a storage well for storing electric charge generated by a photoelectric transducer using incident light; a transferring unit, which is formed on a top surface of a substrate, ... | 02/10/2009 |
| 7485904 | Pixel with strained silicon layer for improving carrier mobility and blue response in imagers An imager having a pixel cell having an associated strained silicon layer. The strained silicon layer increases charge transfer efficiency, decreases image lag, and improves blue response in imaging devices. ... | 02/03/2009 |
| 7473945 | Optical semiconductor integrated circuit device Disclosed is an optical semiconductor integrated circuit device has an opening portion in an insulating layer, which is formed in a light receiving region of a photodiode stepwise. Thus, a step of the opening portion is reduced, leading to an improvement of a step c... | 01/06/2009 |
| 7459733 | Optical enhancement of integrated circuit photodetectors A semiconductor integrated circuit structure and method for fabricating. The semiconductor integrated circuit structure includes a light sensitive device integral with a semiconductor substrate, a cover dielectric layer disposed over the light sensitive device, and ... | 12/02/2008 |
| 7442975 | CMOS image sensor and method for fabricating the same A CMOS image sensor and a method for fabricating the same prevent a lifting effect of microlenses. Also, a diffused reflection of microlenses is prevented. The CMOS image sensor includes photodiodes, an interlayer insulating layer, metal lines formed in the interlay... | 10/28/2008 |
| 7439561 | Pixel sensor cell for collecting electrons and holes The present invention is a pixel sensor cell and method of making the same. The pixel sensor cell approximately doubles the available signal for a given quanta of light. The device of the present invention utilizes the holes produced by impinging photons in a pixel ... | 10/21/2008 |
| 7436038 | Visible/near infrared image sensor array A MOS or CMOS sensor for high performance imaging in broad spectral ranges including portions of the infrared spectral band. These broad spectral ranges may also include portions or all of the visible spectrum, therefore the sensor has both daylight and night vision... | 10/14/2008 |
| 7432543 | Image sensor pixel having photodiode with indium pinning layer An active pixel using a pinned photodiode with a pinning layer formed from indium is disclosed. The pixel comprises a photodiode formed in a semiconductor substrate. The photodiode is an N− region formed within a P-type region. A pinning layer formed fr... | 10/07/2008 |
| 7432576 | Grid metal design for large density CMOS image sensor A new grid metal design for image sensors is disclosed which is comprised of a semiconductor image sensor chip having a pixel region covering most of the chip and a logic circuit region on the chip periphery. The pixel region contains, an array of image pixels where... | 10/07/2008 |
| 7432536 | LED with self aligned bond pad A method is disclosed for attaching a bonding pad to the ohmic contact of a diode while reducing the complexity of the photolithography steps. The method includes the steps of forming a blanket passivation layer over the epitaxial layers and ohmic contacts of a diod... | 10/07/2008 |
| 7422924 | Image device and photodiode structure The invention provides a photodiode with an increased charge collection area, laterally spaced from an adjacent isolation region. Dopant ions of a first conductivity type with a first impurity concentration form a region surrounding at least part of the isolation re... | 09/09/2008 |
| 7423302 | Pinned photodiode (PPD) pixel with high shutter rejection ratio for snapshot operating CMOS sensor A pixel image sensor has a high shutter rejection ratio that prevents substrate charge leakage to a floating diffusion storage node of the pixel image sensor and prevents generation of photoelectrons within the floating diffusion storage node and storage node contro... | 09/09/2008 |
| 7423305 | Solid-state image sensing device having high sensitivity and camera system using the same A solid-state image sensing device includes a plurality of pixels. Each pixel has a photodiode, a first transistor, and a second transistor. The photodiode is constituted by a first-conductivity-type semiconductor region and a second-conductivity-type semiconductor ... | 09/09/2008 |
| 7420231 | Solid state imaging pick-up device and method of manufacturing the same A proper incident state can be obtained in each pixel in accordance with a distance between an optical system and a sensor photoreceptive portion, and improved photoreceptive efficiency and even sensitivity of pixels can be attempted. Since a main light beam ... | 09/02/2008 |
