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...Daniel Webster invented a "bull plow" to pull out tree stumps. It didn't catch on because it was huge and required four oxen to pull it!
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| Number | Title | Issue Date |
| 7675093 | Antiblooming imaging apparatus, system, and methods Apparatus, systems and methods are described to assist in reducing dark current in an active pixel sensor. A potential barrier arrangement is configured to block the flow of charge carriers generated outside a photosensitive region. In various embodiments, a potenti... | 03/09/2010 |
| 7518168 | MOS type solid-state image pickup device and driving method comprised of a photodiode, a detection portion, and a transfer transistor An MOS type solid-state image pickup device including pixels each of which comprises a photodiode PD, a detection portion N and a transfer transistor QT for transferring the charges accumulated in the photodiode PD to the detection portion N, wherein the ... | 04/14/2009 |
| 7508017 | Solid-state image sensor using junction gate type field-effect transistor as pixel A source region and drain region are formed in a surface region of a first semiconductor region. Moreover, a second semiconductor region connected to the drain region is formed in the surface region of the first semiconductor region. A third semiconductor region is ... | 03/24/2009 |
| 7427740 | Image sensor with drain region between optical black regions An image sensor comprises an active pixel region that includes a plurality of unit pixels arranged in a matrix pattern, a first optical black region formed adjacent to the active pixel region, wherein a plurality of shaded unit pixels are arranged therein, a drain r... | 09/23/2008 |
| 7402882 | Methods to eliminate amplifier glowing artifact in digital images captured by an image sensor A charge coupled device includes a substrate; a plurality of image pixels arranged in a two dimensional array in the substrate for capturing an electronic representation of an image and for transferring charge in a first direction; a transfer mechanism for transferr... | 07/22/2008 |
| 7365785 | Electronic camera There is provided an electronic camera comprising an imaging element which photo-electrically converts an object field light, a timing generator including an internal register in which timing of a drive signal used to operate the imaging element can be programmed, a... | 04/29/2008 |
| 7352028 | Solid-state imaging devices A solid-state imaging device includes: a substrate; a photoelectric transducer that is provided within the substrate and generates light-generated charge in accordance with incident light; a floating diffusion that retains the light-generated charge generated from t... | 04/01/2008 |
| 7342271 | CMOS image sensor providing uniform pixel exposure and method of fabricating same An CMOS image sensor includes a photodiode region generating electrical charges in response to incident light received thereat. In one example, the CMOS image sensor further includes first and second transfer gates adapted to prevent or substantially prevent the ele... | 03/11/2008 |
| 7342276 | Method and apparatus utilizing monocrystalline insulator A semiconductor device, including: a semiconductor material; a conductive element; and a substantially monocrystalline insulator disposed between the semiconductor material and the conductive eleme... | 03/11/2008 |
| 7339216 | Vertical color filter sensor group array with full-resolution top layer and lower-resolution lower layer An array of vertical color filter (VCF) sensor groups, optionally including or coupled to circuitry for converting photogenerated carriers produced in the sensors to electrical signals, and methods for reading out any embodiment of the array. The array has a top lay... | 03/04/2008 |
| 7321392 | Solid state imaging device with lateral overflow drain and driving method thereof achieving low power consumption A solid state imaging device comprises channel regions of one conductivity type arranged to extend along a first direction in parallel to each other with predetermined intervals on one surface of a semiconductor substrate, drain regions of the one conductivity type ... | 01/22/2008 |
| 7315328 | Solid-state image sensor device and driving method A solid-state image sensor device having an image sensing portion performing the photoelectric conversion and being able to correspond to both progressive mode in which all picture element signals obtained by the scanning of one time are output independently, and in... | 01/01/2008 |
| 7309898 | Method and apparatus for providing noise suppression in an integrated circuit A method and apparatus for improving the latchup tolerance of circuits embedded in an integrated circuit while avoiding the introduction of noise from such tolerance into the power rails. ... | 12/18/2007 |
| 7289148 | Devices and methods for improving the image quality in an image sensor The present invention is related to an image sensor comprising an array of rows (i) and columns (j) of pixels (Xij), all the pixels of one column of the array being connected to at least one common pixel output line (Ij) having at least one mem... | 10/30/2007 |
| 7285808 | Solid-state imaging device and method for manufacturing solid-state imaging device A plurality of optical sensors (4) are arranged in a surface region of a semiconductor substrate (6) in a matrix pattern, and electric charge generated by the optical sensors (4) is transferred by first and second transfer electrodes (12 ... | 10/23/2007 |
| 7279770 | Isolation techniques for reducing dark current in CMOS image sensors A structure for isolating areas in a semiconductor device is provided. The structure includes a trench having first and second portions formed in a substrate. The first portion has a first width, and the second portion has a second width and is below the first porti... | 10/09/2007 |
| 7276769 | Semiconductor integrated circuit device In a semiconductor integrated circuit device, semiconductor elements formed in active regions included in a first element formation portion (stress transition region) in a peripheral circuit formation portion are not electrically driven, while only semiconductor ele... | 10/02/2007 |
| 7274394 | Solid state image pickup device and manufacturing method therefor A method of manufacturing a MOS-type solid-state image pickup device having a photoelectric conversion unit, a transfer MOS transistor, a gate electrode disposed on an insulating film and a semiconductor substrate on which the photoelectric conversion unit and the t... | 09/25/2007 |
| 7271836 | Solid state image pickup device capable of draining unnecessary charge and driving method thereof A drain region is formed along a horizontal charge transfer channel constituting a horizontal charge transfer element, and a barrier region for charges is formed between the horizontal charge transfer channel and drain region. A two-electrode element is formed by us... | 09/18/2007 |
| 7259790 | MOS type solid-state image pickup device and driving method comprised of a photodiode a detection portion and a transfer transistor An MOS type solid-state image pickup device including pixels each of which comprises a photodiode PD, a detection portion N and a transfer transistor QT for transferring the charges accumulated in the photodiode PD to the detection portion N, wherein the ... | 08/21/2007 |
| 7239003 | Isolation techniques for reducing dark current in CMOS image sensors Isolation methods and devices for isolating regions of a semiconductor device. The isolation method and structure include forming an isolating trench in an active area and filling the trench with a doped conductive material containing silicon. Suitable conductive ma... | 07/03/2007 |
| 7236197 | Solid-state image sensor using junction gate type field-effect transistor as pixel A source region and drain region are formed in a surface region of a first semiconductor region. Moreover, a second semiconductor region connected to the drain region is formed in the surface region of the first semiconductor region. A third semiconductor region is ... | 06/26/2007 |
| 7227208 | Solid-state image pickup apparatus The invention is to suppress a leak current in a photodiode and an unevenness in the leak currents. In a photoelectric converting device including a channel stop area of a higher concentration than in an element isolating insulation film formed between a photodiode,... | 06/05/2007 |
| 7218346 | Method for driving solid-state image pickup device A method to overcome a disadvantage that the signal charges decrease depending upon the storage time in a photo-electric conversion unit of a solid-state image pickup device. At the moment t2 when a prescribed exposure time (t1−t2)... | 05/15/2007 |
| 7212240 | Imager with a row of photodiodes or pinned photo diodes A TDI sensor includes a first readout register and a plurality of sensor columns. The first readout register includes a plurality of first readout register elements. A first sensor column includes a photogate and a diode photodetector at an end. The diode photodetec... | 05/01/2007 |
| 7209171 | Solid-state imaging apparatus and driving method thereof Each unit pixel includes a photodiode, a reading selection transistor, a reading transistor, an amplifying transistor, a reset transistor, and a horizontal selection transistor, and thus a MOS image sensor of a dot-sequential reading 5-Tr type is formed. The reading... | 04/24/2007 |
| 7199410 | Pixel structure with improved charge transfer An active pixel is described comprising a semiconductor substrate and a radiation sensitive source of carriers in the substrate, such as for instance, a photodiode. A non-carrier storing, carrier collecting region in the substrate is provided for attracting carriers... | 04/03/2007 |
| 7187411 | Charge transfer device having discharge drain, CCD image sensor, and CCD image pickup system In a CCD image sensor, a CCD line memory is disposed between each vertical charge transfer device and a horizontal charge transfer device to selectively transfer charges from each vertical charge transfer device to the horizontal charge transfer device. A discharge ... | 03/06/2007 |
| 7166828 | Solid-state image sensing device and cellphone having image processing function A solid-state image sensing device including an image sensing region in which a matrix of unit pixels, each including a photodiode in a surface portion of a semiconductor substrate, is provided; a read transistor connected between a respective photodiode and a detec... | 01/23/2007 |
| 7164444 | Vertical color filter detector group with highlight detector A vertical color filter detector group with highlight detector for generating data for a picture element. In one embodiment, the detector group includes three photodiodes each having its own spectral sensitivity and saturation exposure level and a highlight diode ha... | 01/16/2007 |
| 7151305 | Photoelectric conversion device, and image sensor and image input system making use of the same In a photoelectric conversion device including a first-conductivity type first semiconductor region located in a pixel region, a second-conductivity type second semiconductor region provided in the first semiconductor region, and a wiring for electrically connecting... | 12/19/2006 |
| 7139023 | High dynamic range charge readout system A solid-state image sensor has a readout architecture that incorporates charge multiplier cells into a horizontal register of a CCD image sensor, and includes a first CCD register adjacent to at least a second CCD register and coupled to the said first register thro... | 11/21/2006 |
| 7132724 | Complete-charge-transfer vertical color filter detector A vertical-color-filter detector disposed in a semiconductor structure comprises a complete-charge-transfer detector comprising semiconductor material doped to a first conductivity type and has a horizontal portion disposed at a first depth in the semiconductor stru... | 11/07/2006 |
| 7129531 | Programmable resistance memory element with titanium rich adhesion layer A programmable resistance memory element comprising an adhesion layer between the programmable resistance material and at least one of the electrodes. Preferably, the adhesion layer is a titanium rich titanium nitride composition. ... | 10/31/2006 |
| 7102680 | Image pickup device capable of adjusting the overflow level of the sensor based on the read out mode The driving device of a solid-state imaging device comprises a driving unit for driving the solid-state imaging device in either an addition driving mode in which a plurality of pixels are added and read as a single pixel or a non-addition driving mode, and a substr... | 09/05/2006 |
| 7102678 | Image reading device with reduced variations among signal levels In an image reading device having a plurality of photoelectric conversion elements formed in one or more rows on an IC chip and a conductor layer having openings formed therein for limiting light striking the photoelectric conversion elements, a conductor having sub... | 09/05/2006 |
| 7074639 | Fabrication of a high-precision blooming control structure for an image sensor Provided is a method of fabrication of a blooming control structure for an imager. The structure is produced in a semiconductor substrate in which is configured an electrical charge collection region. The electrical charge collection region is configured to accumula... | 07/11/2006 |
| 7075575 | Gated vertical punch through device used as a high performance charge detection amplifier A charge detection system used in an image sensor consists of the vertical punch through transistor with the gate surrounding its source and connected to it. The charge detector has a large conversion gain, high dynamic range, low reset feed through, and low noise. ... | 07/11/2006 |
| 7050101 | Solid state image pickup device capable of draining unnecessary charge and driving method thereof A drain region is formed along a horizontal charge transfer channel constituting a horizontal charge transfer element, and a barrier region for charges is formed between the horizontal charge transfer channel and drain region. A two-electrode element is formed by us... | 05/23/2006 |
| 7034273 | Sensor method for dual line integrating line scan sensor A method includes a first step followed by a second step. The first step includes transferring photo charges in a delay register into a first readout register, transferring photo charges in a first storage register into the delay register, and transferring photo cha... | 04/25/2006 |
