Famous Patents
Felix Hoffmann, a German chemist, was searching for something to relieve his father's arthritis. In doing so, he "rediscovered" acetylsalicylic acid and in 1900, patented a stable process for developing it. Hence, we have aspirin.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7564079 | Solid state imager device with leakage current inhibiting region In a case when a structure of forming a p+ layer on a substrate rear surface side is employed in order to prevent dark current generation from the silicon boundary surface, various problems occur. According to this invention, an insulation film 39 is provided... | 07/21/2009 |
| 7427790 | Image sensor with gain control An image sensor having a plurality of pixels; each pixel includes one or more photosensitive elements that collect charge in response to incident light; one or more transfer mechanisms that respectively transfer the charge from the one or more photosensitive element... | 09/23/2008 |
| 7427742 | Microlens for use with a solid-state image sensor and a non-telecentric taking lens An imager includes a two-dimensional array of photosensors, each photosensor having a center point. A non-telecentric lens is positioned over the two-dimensional array of photosensors, and a two-dimensional array of microlenses is positioned over the two-dimensional... | 09/23/2008 |
| 7417271 | Electrode structure having at least two oxide layers and non-volatile memory device having the same An electrode structure having at least two oxide layers that more reliably switch and operate without the use of additional devices and a non-volatile memory device having the same are provided. The electrode structure may include a lower electrode, a first oxide la... | 08/26/2008 |
| 7358191 | Method for decreasing sheet resistivity variations of an interconnect metal layer According to one exemplary embodiment, a method includes a step of forming a number of trenches in a dielectric layer, where the dielectric layer is situated over a wafer. The method further includes forming a metal layer over the dielectric layer and in the trenche... | 04/15/2008 |
| 7355385 | Voltage injector and detector using pixel array for printed circuit board testing One embodiment includes an injector pixel array having injector pixels each coupled to the bottom surface of a conductive material having a directional electrical conductivity only in a direction corresponding to a path between the bottom surface and top surface of ... | 04/08/2008 |
| 7339155 | CMOS image sensor and method for fabricating the same A CMOS image sensor and a method for fabricating the same are disclosed, in which light-shielding layers are formed in trenches to improve photosensitivity of the image sensor and simplify its process steps. The CMOS image sensor includes a plurality of photodiodes ... | 03/04/2008 |
| 7333146 | Image capturing apparatus for adjusting a relative position between an image sensor and an optical axis The image sensor 52 is provided with a chip 53 having a image capturing surface 31 and a packaged to which the chip 53 is attached. The image capturing surface include a plurality of blocks 31a to 31d. Each of ... | 02/19/2008 |
| 7329848 | Photo sensor, display panel having the same and display device having the display panel A photo sensor includes a first substrate, a switching element and a second substrate. The switching element is disposed at the first substrate and defined by a control electrode, and first and second current electrodes. The switching element includes a channel disp... | 02/12/2008 |
| 7316949 | Integrating n-type and p-type metal gate transistors At least a p-type and n-type semiconductor device deposited upon a semiconductor wafer containing metal or metal alloy gates. More particularly, a complementary metal-oxide-semiconductor (CMOS) device is formed on a semiconductor wafer having n-type and p-type metal... | 01/08/2008 |
| 7291861 | Solid-state imaging device, method for driving the same, method for manufacturing the same, camera, and method for driving the same A solid-state imaging device includes a two-dimensional array of photosensor sections on a semiconductor substrate, and a vertical transfer section including two-layer vertical transfer electrodes. The photosensor sections store signal charges generated by photoelec... | 11/06/2007 |
| 7285808 | Solid-state imaging device and method for manufacturing solid-state imaging device A plurality of optical sensors (4) are arranged in a surface region of a semiconductor substrate (6) in a matrix pattern, and electric charge generated by the optical sensors (4) is transferred by first and second transfer electrodes (12 ... | 10/23/2007 |
| 7282448 | Substrate and method of forming substrate for fluid ejection device A method of forming an opening through a substrate having a first side and a second side opposite the first side includes forming spaced etch stops in the first side of the substrate, etching into the substrate from the second side toward the first side to the space... | 10/16/2007 |
| 7282420 | Method of manufacturing a flash memory device A method of manufacturing a flash memory device wherein a stacked structure of an oxide and nitride or the reverse is applied to insulation spacers provided on sidewalls of gates for forming source/drain regions. After completing the source/drain regions, spacers ar... | 10/16/2007 |
| 7276749 | Image sensor with microcrystalline germanium photodiode layer A microcrystalline germanium image sensor array. The array includes a number of pixel circuits fabricated in or on a substrate. Each pixel circuit comprises a charge collecting electrode for collecting electrical charges and a readout means for reading out the charg... | 10/02/2007 |
| 7253458 | CMOS image sensor A complementary metal oxide semiconductor field effect transistor (CMOS-FET) image sensor. An active photosensing pixel is formed on a substrate. At least one side of the pixel has a width equal to or less than approximately 3 μm. At least one dielectric layer is d... | 08/07/2007 |
| 7253456 | Diode structure and integral power switching arrangement A diode structure having high ESD stability is described. Other embodiments provide an integral power switching arrangement having an integrated low leakage diode. ... | 08/07/2007 |
| 7250971 | Charge read-out method and solid-state imaging device capable of shortening read-out time charges stored in a plurality of light receiving units A charge read-out method and a solid-state imaging device capable of shortening a read-out time of charges stored in a plurality of light receiving units arranged linearly are provided. The charge read-out method includes the steps of moving the charges, which are g... | 07/31/2007 |
| 7227543 | Contrast adjusting circuitry and video display apparatus using same With the aim of offering a video display technique by which stable and high contrast video images are reproduced, contrast adjusting circuitry is constructed. The contrast adjusting circuitry detects a maximum picture level (MPL) and an average picture level (APL) o... | 06/05/2007 |
| 7212241 | Solid-state imaging device and method for driving the same A solid-state imaging device comprises, on a semiconductor substrate, a plurality of sensor sections for storing a signal charge commensurate with a quantity of reception light, a charge transfer section for transferring and outputting the signal charge of the senso... | 05/01/2007 |
| 7202899 | Method to prevent white pixels in a CMOS image sensor A method and system for preventing white pixel difficulties resulting from undesired current induced in an image sensor having a photodiode and a depletion region therein. The photodiode is isolated in a pixel layout for an image sensor. A depletion region is config... | 04/10/2007 |
| 7202181 | Etching of substrates of light emitting devices Fabrication of a light emitting device includes etching of a substrate of the light emitting device. The etch may be an aqueous etch sufficient to increase an amount of light extracted through the substrate. The etch may be a direct aqueous etch of a silicon carbide... | 04/10/2007 |
| 7198976 | Solid-state imaging device and method for manufacturing the same Channel stop sections are formed by multiple times of impurity ion implanting processes. Four-layer impurity regions are formed across the depth of a semiconductor substrate (across the depth of the bulk), so that a P-type impurity region is formed deep in the semic... | 04/03/2007 |
| 7199918 | Electrical contact method and structure for deflection devices formed in an array configuration A method of fabricating an electrical connection for a spatial light modulator includes providing a first substrate including a plurality of bias electrodes and a plurality of dielectric bond pads. The method also includes providing a second substrate of a predeterm... | 04/03/2007 |
| 7190012 | Photodiode and method of manufacturing the same A photodiode and a method of manufacturing the photodiode are provided. The method includes forming a diode junction structure including a light receiving unit and an electrode unit on a semiconductor substrate, forming a buffer oxide layer and an etching blocking l... | 03/13/2007 |
| 7170121 | Computer system architecture using a proximity I/O switch One embodiment of the present invention provides a proximity I/O switch, which is configured to transfer data between the components in a computer system. This proximity I/O switch is comprised of multiple switch chips, which are coupled together through capacitive ... | 01/30/2007 |
| 7164444 | Vertical color filter detector group with highlight detector A vertical color filter detector group with highlight detector for generating data for a picture element. In one embodiment, the detector group includes three photodiodes each having its own spectral sensitivity and saturation exposure level and a highlight diode ha... | 01/16/2007 |
| 7154136 | Isolation structures for preventing photons and carriers from reaching active areas and methods of formation Regions of an integrated circuit are isolated by a structure that includes at least one isolating trench on the periphery of an active area. The trench is deep, extending at least about 0.5 μm into the substrate. The isolating structure prevents photons and electro... | 12/26/2006 |
| 7151535 | Contrast adjusting circuitry and video display apparatus using same With the aim of offering a video display technique by which stable and high contrast video images are reproduced, contrast adjusting circuitry is constructed. The contrast adjusting circuitry detects a maximum picture level (MPL) and an average picture level (APL) o... | 12/19/2006 |
| 7129531 | Programmable resistance memory element with titanium rich adhesion layer A programmable resistance memory element comprising an adhesion layer between the programmable resistance material and at least one of the electrodes. Preferably, the adhesion layer is a titanium rich titanium nitride composition. ... | 10/31/2006 |
| 7119414 | Fuse layout and method trimming A fuse layout (10) constructed of a wiring electrode made of a barrier metal layer of a high melting point and a main wiring metal layer comprises a plurality of fusion-type fuse sections (11 and 12) connected to each other in series and a plura... | 10/10/2006 |
| 7112799 | X-ray detector with a plurality of detector units An x-ray detector comprises a plurality of detector units arranged in a detection surface. Individual detector units including a sensor element and read-out circuit. The sensor elements and the read-out circuitry are spatially separated transversely to the detection... | 09/26/2006 |
| 7102680 | Image pickup device capable of adjusting the overflow level of the sensor based on the read out mode The driving device of a solid-state imaging device comprises a driving unit for driving the solid-state imaging device in either an addition driving mode in which a plurality of pixels are added and read as a single pixel or a non-addition driving mode, and a substr... | 09/05/2006 |
| 7061064 | Semiconductor device and package for containing semiconductor element To enable to downsize a package for containing a solid-state imaging element relative to a solid-state imaging element having the same size and accordingly, downsize a solid-state imaging device for containing the solid-state imaging element thereto, further, downsi... | 06/13/2006 |
| 7030919 | Solid state image pick-up device The solid state image pick-up device comprises a chip wherein an object to be photographed is put directly on the back surface of the chip, a light incident on the object enters the inner portion of the chip, signal electric charges generated in the inner portion of... | 04/18/2006 |
| 7015963 | CCD sensor incorporating parallel diffusion regions within the output In a CCD sensor in which electric charges derived from a plurality of detecting elements 2 are outputted from a signal output portion 9, two diffusion portions 22A and 22B are provided in a parallel manner to each other in the signal outp... | 03/21/2006 |
| 6963093 | Solid-state imaging device and method for producing the same A solid-state imaging device includes a plurality of vertical charge transferring portions, and a horizontal charge transferring portion connected to at least one end of each of the vertical charge transferring portions. A vertical transfer channel region of a first... | 11/08/2005 |
| 6943389 | Solid-state imaging device A solid-state imaging device comprises an image pickup unit having unit cells including opto-electrical converter elements, said unit cells being disposed in a two-dimensional array, a selection line made of polysilicon for selectively determining the unit cells in ... | 09/13/2005 |
| 6906745 | Digital exposure circuit for an image sensor Automatic exposure adjusting device considers the image on a pixel-by-pixel basis. Each pixel is characterized according to its most significant bits. After the pixels are characterized, the number of pixels in any particular group is counted. That counting is compa... | 06/14/2005 |
| 6862041 | Circuit for processing charge detecting signal having FETS with commonly connected gates A circuit for processing charge detecting signals transferred to a floating diffusion amplifier from a charge coupled device includes a first node connected to the floating diffusion amplifier; a first enhancement type FET connected in series between a first fixed-v... | 03/01/2005 |
