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| Number | Title | Issue Date |
| 8110856 | Solid-state imaging device and method for manufacturing the same A solid-state imaging device having a high sensitivity and a structure in which a miniaturized pixel is obtained, and a method for manufacturing the solid-state imaging device in which an interface is stable, a spectroscopic characteristic is excellent and which can... | 02/07/2012 |
| 8106427 | Image sensor with well bounce correction An image sensor includes a pixel array having photoactive pixels and dark reference pixels. The photoactive pixels can be configured in a sub-array within the pixel array. Well contacts are only placed along opposing sides or edges of the sub-array of photoactive pi... | 01/31/2012 |
| 8101978 | Circuit and photo sensor overlap for backside illumination image sensor A backside illuminated (“BSI”) imaging sensor pixel includes a photodiode region and pixel circuitry. The photodiode region is disposed within a semiconductor die for accumulating an image charge in response to light incident upon a backside of the BSI imaging s... | 01/24/2012 |
| 8097904 | Method and apparatus for backside illuminated image sensors using capacitively coupled readout integrated circuits The images sensor includes a readout circuit capacitatively coupled to a memory circuit. The readout circuit includes: (i) a photon detector to receive a plurality of photons and to provide a charge signal corresponding to the received photons, (ii) a resettable int... | 01/17/2012 |
| 8072007 | Backside-illuminated imaging device A backside-illuminated imaging device is provided and includes: a plurality of charge accumulating areas in the semiconductor substrate which accumulate the electric charges; and a plurality of filters above a backside surface of the semiconductor substrate correspo... | 12/06/2011 |
| 8044439 | Light-emitting device and manufacturing method of the same A light-emitting device (1) is provided having a current blocking layer (9) of buried structure, a portion of the current blocking layer (9) having an oxygen concentration higher than that of a light-emitting layer, the current blocking layer be... | 10/25/2011 |
| 7964898 | Back illuminated photodetector The present invention provides a back illuminated photodetector having a sufficiently small package as well as being capable of suppressing the scattering of to-be-detected light and method for manufacturing the same. A back illuminated photodiode 1 comprises an N-t... | 06/21/2011 |
| 7859027 | Back irradiating type solid state imaging device A back irradiating type solid state imaging device comprises: a first semiconductor substrate; a plurality of photoelectric converting devices that receives a light incident from a back side of the first semiconductor substrate and are formed in a two-dimensional ar... | 12/28/2010 |
| 7804113 | Anti-blooming structures for back-illuminated imagers An anti-blooming structure for a back-illuminated imager is disclosed. In one embodiment, the anti-blooming structure is formed in a substrate of a first conductivity type having a back side and a front side, comprising a channel region of a second conductivity type... | 09/28/2010 |
| 7795650 | Method and apparatus for backside illuminated image sensors using capacitively coupled readout integrated circuits The images sensor includes a readout circuit capacitatively coupled to a memory circuit. The readout circuit includes: (i) a photon detector to receive a plurality of photons and to provide a charge signal corresponding to the received photons, (ii) a resettable int... | 09/14/2010 |
| 7759707 | Semiconductor substrate, semiconductor device, method of producing semiconductor substrate, and method of producing semiconductor device A semiconductor substrate includes: a first semiconductor layer; an oxide layer that is formed on the first semiconductor layer; a second semiconductor layer that is formed on the oxide layer; a first recess that is formed in the second semiconductor layer with exte... | 07/20/2010 |
| 7615808 | Structure for implementation of back-illuminated CMOS or CCD imagers A structure for implementation of back-illuminated CMOS or CCD imagers. An epitaxial silicon layer is connected with a passivation layer, acting as a junction anode. The epitaxial silicon layer converts light passing through the passivation layer and collected by th... | 11/10/2009 |
| 7420214 | Array substrate for display device An array substrate for a display device includes an insulating substrate, a buffer layer which is disposed on the insulating substrate and is formed of silicon oxide with a refractive index equal to a refractive index of the insulating substrate, a first insulation ... | 09/02/2008 |
| 7397067 | Microdisplay packaging system Some embodiments provide a microdisplay integrated circuit (IC), a substantially transparent protective cover coupled to the microdisplay IC, and a base coupled to the microdisplay IC. Thermal expansion characteristics of the base may be substantially similar to the... | 07/08/2008 |
| 7369385 | Overload limiting circuit An overload current limiting circuit includes an output control circuit responsive to a logic input signal for generating a control signal for driving an output device to produce at an output terminal a signal representative of the logic input signal; and a sense ci... | 05/06/2008 |
| 7362420 | Entangled-photons range finding system and method A method of determining a distance to an object is presented. A first photon and a second photon are simultaneously generated. The first photon is reflected off an object. The second photon is directed to an optical cavity. An arrival of the first photon is correlat... | 04/22/2008 |
| 7309898 | Method and apparatus for providing noise suppression in an integrated circuit A method and apparatus for improving the latchup tolerance of circuits embedded in an integrated circuit while avoiding the introduction of noise from such tolerance into the power rails. ... | 12/18/2007 |
| 7294874 | Laser irradiation method, method for manufacturing a semiconductor device, and a semiconductor device The present invention discloses the semiconductor device having the substrate that reflects the laser beam on a surface; that absorbs the laser beam therein; or that partially reflects the laser beam on the surface and partially absorbs the laser beam in the laser a... | 11/13/2007 |
| 7279712 | Solid state image pickup device and method of producing solid state image pickup device Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for t... | 10/09/2007 |
| 7230288 | Solid-state image pickup device and fabrication method thereof A solid-state image pickup device includes: a plurality of light receiving portions arranged in a matrix, and a vertical transfer register which is four-phase driven by first, second, third and fourth transfer electrodes of a three-layer structure. The vertical tran... | 06/12/2007 |
| 7173294 | Image sensor with reduced sensitivity to gamma rays The CCD image sensor addresses the problem of noise, due to background charge generated by Compton scattering of gamma rays. In applications, in which an imager must operate in a high-radiation environment, such background noise reduces the video signal/noise. This ... | 02/06/2007 |
| 7157742 | Integrated circuit device An integrally packaged optronic integrated circuit device (310) including an integrated circuit die (322) containing at least one of a radiation emitter and radiation receiver and having top and bottom surfaces formed of electrically insulative and mec... | 01/02/2007 |
| 7132702 | Image sensor In the present invention, a charge transfer unit is arranged on a first-plane side of a thinly-formed semiconductor base. Charge accumulating units are arranged on a second-plane side, the opposite side. A depletion prevention layer is arranged closer to the second-... | 11/07/2006 |
| 7129531 | Programmable resistance memory element with titanium rich adhesion layer A programmable resistance memory element comprising an adhesion layer between the programmable resistance material and at least one of the electrodes. Preferably, the adhesion layer is a titanium rich titanium nitride composition. ... | 10/31/2006 |
| 7129532 | Image sensor and method for fabricating the same The present invention relates to an image sensor with a microlens and a method for fabricating the same with use of a bump formation process. A method for fabricating an image sensor includes the steps of: forming a passivation layer on a substrate structure provide... | 10/31/2006 |
| 7126052 | Isoelectronic surfactant induced sublattice disordering in optoelectronic devices A method of disordering a layer of an optoelectronic device including; growing a plurality of lower layers; introducing an isoelectronic surfactant; growing a layer; allowing the surfactant to desorb; and growing subsequent layers all performed at a low pressure of ... | 10/24/2006 |
| 7110629 | Optical ready substrates An article of manufacture comprising an optical-ready substrate made of a first semiconductor layer, an insulating layer on top of the first semiconductor layer, and a second semiconductor layer on top of the insulating layer, wherein the second semiconductor layer ... | 09/19/2006 |
| 7075576 | CCD camera having an anti-stokes phosphor bound thereto A camera includes a charge-coupled device (CCD). The CCD has an anti-stokes phosphor bound to the light receiving surface of the CCD. The anti-stokes phosphor emits electromagnetic radiation having wavelengths in the range of 950 nm to 1100 nm. A housing surrounds t... | 07/11/2006 |
| 7072534 | Optical ready substrates An article of manufacture comprising an optical ready substrate made of a first semiconductor layer, an insulating layer on top of the first semiconductor layer, and a second semiconductor layer on top of the insulating layer, wherein the second semiconductor layer ... | 07/04/2006 |
| 7053401 | Synthesis and application of photosensitive pentacene precursor in organic thin film transistors Soluble, photosensitive precursors of pentacene are synthesized by a one-step Diels-Alder reaction of pentacene with N-sulfinylamides. These precursors may include a photopolymerizable group, which renders the pentacene precursor as a negative tone resist. The penta... | 05/30/2006 |
| 7030498 | Semiconductor device with copper wirings having improved negative bias temperature instability (NBTI) A semiconductor device with p-channel MOS transistor having: a gate insulating film of nitrogen-containing silicon oxide; a gate electrode of boron-containing silicon; side wall spacers on side walls of the gate electrode, comprising silicon oxide; an interlayer ins... | 04/18/2006 |
| 6943425 | Wavelength extension for backthinned silicon image arrays There is described a back thinned sensor in which a material is added on the front surface to extend the wavelength of the sensor into wavelengths it normally does not reach. In the preferred embodiment, the back-thinned layer comprises silicon and is the base for a... | 09/13/2005 |
| 6933529 | Active matrix type organic light emitting diode device and thin film transistor thereof An active matrix type organic light emitting diode device and a thin film transistor thereof are disclosed in the present invention. The driving thin film transistor for an active matrix type organic light emitting diode (AMOLED) device having first and second elect... | 08/23/2005 |
| 6921687 | Power semiconductor element capable of improving short circuit withstand capability while maintaining low on-voltage and method of fabricating the same In a p-type base layer of a trench IGBT comprising a p-type collector layer, an n-type base layer formed on the p-type collector layer, the p-type base layer formed on the n-type base layer, and an n-type emitter layer formed on the surface of the p-type base layer,... | 07/26/2005 |
| 6911690 | Flash memory cell, flash memory cell array and manufacturing method thereof A flash memory cell array comprises a substrate, a string of memory cell structures and source region/drain region. Each of memory cell structures includes a stack gate structure including a select gate dielectric layer, a select gate and a gate cap layer formed on ... | 06/28/2005 |
| 6897498 | Polycrystalline germanium-based waveguide detector integrated on a thin silicon-on-insulator (SOI) platform A photodetector for use with relatively thin (i.e., sub-micron) silicon optical waveguides formed in a silicon-on-insulator (SOI) structure comprises a layer of poly-germanium disposed to couple at least a portion of the optical signal propagating along the silicon ... | 05/24/2005 |
| 6885105 | Semiconductor device with copper wirings A semiconductor device with p-channel MOS transistor having: a gate insulating film of nitrogen-containing silicon oxide; a gate electrode of boron-containing silicon; side wall spacers on side walls of the gate electrode, comprising silicon oxide; an interlayer ins... | 04/26/2005 |
| 6876016 | Invention for reducing dark current of CMOS image sensor with new structure A method is disclosed for forming an image sensor. In a semiconductor wafer containing a p-type region an n-type connection region is formed within the p-type region. An n-type photodiode region is formed in the p-type region connected to the connection region. A fi... | 04/05/2005 |
| 6872992 | Semiconductor device for detecting wide wavelength ranges A CCD unit is provided on the surface side of a thin shape section that is formed on a first substrate. In the CCD unit, first cells are provided and disposed in the form of an array in a direction in which the thin shape section extends. An InGaAs photodiode unit i... | 03/29/2005 |
| 6861683 | Optoelectronic component using two encapsulating materials and the method of making the same In an optoelectronic component assembly and a method for the production thereof, the optoelectronic component assembly includes an optoelectronic component arranged on a support element, which is surrounded by a closed dam. An encapsulation is arranged in an inner a... | 03/01/2005 |
