Bizarre Patents
Pillow with retractable umbrella
A pillow assembly having a supporting assembly and a retractable umbrella assembly that is easily transportable and allows a user to support his/her head while covering their face from sunlight.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7759706 | Solid-state imaging device having impurities with different diffusion coefficients The present invention provides a solid-state imaging device having an array of unit pixels, each unit pixel including a photoelectric conversion element and an amplifier transistor for amplifying a signal corresponding to charge obtained by photoelectric conversion ... | 07/20/2010 |
| 7414262 | Electronic devices and methods for forming the same Electronic devices, such as those having a flexible substrate and printed material on the flexible substrate. In one embodiment, the printed material and substrate are part of an electronic device having at least three terminals, wherein the electronic device has a ... | 08/19/2008 |
| 7405434 | Quantum dot conjugates in a sub-micrometer fluidic channel A nanofluidic channel fabricated in fused silica with an approximately 500 nm square cross section was used to isolate, detect and identify individual quantum dot conjugates. The channel enables the rapid detection of every fluorescent entity in solution. A laser of... | 07/29/2008 |
| 7393723 | Method of manufacturing a semiconductor device A method of manufacturing a semiconductor device that forms laminate layers includes the steps of reducing contamination containing the single bond of carbon on at least one part of a surface on which the laminate films are formed by activated hydrogen before the la... | 07/01/2008 |
| 7355268 | High reflector tunable stress coating, such as for a MEMS mirror An optical device having a high reflector tunable stress coating includes a micro-electromechanical system (MEMS) platform, a mirror disposed on the MEMS platform, and a multiple layer coating disposed on the mirror. The multiple layer coating includes a layer of si... | 04/08/2008 |
| 7259444 | Optoelectronic device with patterned ion implant subcollector In one embodiment, an optoelectronic device is provided having a pin photo diode including a semi-insulating substrate or layer, with a patterned implant region of a first dopant type. The pin photo diode includes an upper layer having semiconductor material with a ... | 08/21/2007 |
| 7214592 | Method and apparatus for forming a semiconductor substrate with a layer structure of activated dopants Methods of forming semiconductor devices with a layered structure of thin and well defined layer of activated dopants, are disclosed. In a preferred method, a region in a semiconductor substrate is amorphized, after which the region is implanted with a first dopant ... | 05/08/2007 |
| 7202511 | Near-infrared visible light photon counter Electromagnetic energy is detected with high efficiency in the spectral range having wavelengths of about 1–2 microns by coupling an absorber layer having high quantum efficiency in the spectral range having wavelengths of about 1–2 microns to an intrinsic semic... | 04/10/2007 |
| 7145189 | Photon amplification for image sensors A pixel cell having a substrate, photo-conversion device, and at least one dielectric layer over the photo-conversion device. The at least one dielectric layer includes one or more rare earth elements for amplifying the number of photons capable of being converted t... | 12/05/2006 |
| 7132702 | Image sensor In the present invention, a charge transfer unit is arranged on a first-plane side of a thinly-formed semiconductor base. Charge accumulating units are arranged on a second-plane side, the opposite side. A depletion prevention layer is arranged closer to the second-... | 11/07/2006 |
| 7129531 | Programmable resistance memory element with titanium rich adhesion layer A programmable resistance memory element comprising an adhesion layer between the programmable resistance material and at least one of the electrodes. Preferably, the adhesion layer is a titanium rich titanium nitride composition. ... | 10/31/2006 |
| 7105872 | Thin film semiconductor element and method of manufacturing the same The invention provides a thin film semiconductor element and a method of manufacturing the same to achieve lowering the resistance of gate electrodes, lowering the capacitance of source electrodes, and enhancing etching characteristics. The thin film semiconductor e... | 09/12/2006 |
| 7075079 | Sensor for dual wavelength bands A dual wavelength focal plane has a first array of infrared sensing pixel elements and a second array of visible light pixel elements adapted to be selective to colors encountered while driving an automobile. The second array is selective to the colors red, blue and... | 07/11/2006 |
| 7057262 | High reflector tunable stress coating, such as for a MEMS mirror An optical device having a high reflector tunable stress coating includes a micro-electromechanical system (MEMS) platform, a mirror disposed on the MEMS platform, and a multiple layer coating disposed on the mirror. The multiple layer coating includes a layer of si... | 06/06/2006 |
| 7057255 | Photodiode, optical receiver device including the same, and method of making the photodiode A photodiode (PD chip) includes a substrate, an absorption layer, a p-n junction in the absorption layer, a passivation film for protecting the end of the p-n junction, a p-electrode, and an n-electrode. The passivation film is covered with a protective layer compos... | 06/06/2006 |
| 7045785 | Method for manufacturing an infrared sensor device A method for manufacturing an infrared sensor, including preparing a substrate including a supporting member made of single crystalline silicon, a first layer made of silicon oxide formed on the supporting member, and a second layer made of single crystalline silico... | 05/16/2006 |
| 6946689 | Control TFT for OLED display The present invention discloses a control TFT structure (i.e. a driving TFT) for reducing leakage in an OLED display. A semiconductor layer, such as a polysilicon layer, is deposited on a transparent substrate as a channel region. A lightly doped region and a drain ... | 09/20/2005 |
| 6897498 | Polycrystalline germanium-based waveguide detector integrated on a thin silicon-on-insulator (SOI) platform A photodetector for use with relatively thin (i.e., sub-micron) silicon optical waveguides formed in a silicon-on-insulator (SOI) structure comprises a layer of poly-germanium disposed to couple at least a portion of the optical signal propagating along the silicon ... | 05/24/2005 |
| 6825516 | CMOS imager and method of formation A CMOS imager having an epitaxial layer formed below pixel sensor cells is disclosed. An epitaxial layer is formed between a semiconductor substrate and a photosensitive region to improve the cross-talk between pixel cells. The thickness of the epitaxial layer is op... | 11/30/2004 |
| 6746939 | Production method for solid imaging device White defects caused by a dark-current of a solid-state imaging device is reduced by effectively bringing out gettering capability of a buried getter sink layer. A buried getter sink layer is formed by introducing to the semiconductor substrate a substance of a seco... | 06/08/2004 |
| 6670657 | Integrated circuit having photodiode device and associated fabrication process An integrated circuit is provided that includes a substrate incorporating a semiconductor photodiode device having a p-n junction. The photodiode device includes at least one capacitive trench buried in the substrate and connected in parallel with the jun... | 12/30/2003 |
| 6617659 | Semiconductor device having heat detecting element and insulating cavity and method of manufacturing thereof The present invention provides a semiconductor device including a silicon substrate; a heat insulating layer including a silicon oxide film; and a heat detecting portion, in which the heat insulating layer includes a closed cavity and/or a hole, an interi... | 09/09/2003 |
| 6570196 | Lipid vesicles or lipid bilayers on chips The present invention relates to bioelectronic devices comprising lipid vesicles which are in contact with a chip, particularly with at least one gate of a field effect transistor. The vesicles/bilayers may comprise effector molecules in their membrane an... | 05/27/2003 |
| 6555854 | Charge coupled device with multi-focus lengths A charge coupled device (CCD) with multi-focus lengths is provided. The arrays of optical sensors with a plurality of transparent plates in parallel disposed thereon are disposed on a substrate. By way of either of changing the thicknesses of the transpar... | 04/29/2003 |
| 6548879 | Semiconductor device having heat detecting element and insulating cavity and method of manufacturing the same The present invention provides a semiconductor device including a silicon substrate; a heat insulating layer including a silicon oxide film; and a heat detecting portion, in which the heat insulating layer includes a closed cavity and/or a hole, an interi... | 04/15/2003 |
| 6545302 | Image sensor capable of decreasing leakage current between diodes and method for fabricating the same An image sensor capable of preventing the degradation of pinned photodiodes and the generation of leakage current between neighboring pinned photodiodes is provided. The disclosed image sensor contains a plurality of pixel units, each pixel unit having a ... | 04/08/2003 |
| 6339236 | Light responsive semiconductor switch with shorted load protection An improved light responsive semiconductor switch with shorted load protection capable of successfully interrupting a load overcurrent. The switch is includes an output transistor which is triggered by a photovoltaic element to connect a load to a power s... | 01/15/2002 |
| 6333526 | Charge transfer device and a manufacturing process therefor This invention provides a manufacturing process for a charge transfer device comprising an N-type well formed in a P-type well on a semiconductor substrate for transferring a signal charge, an N+region formed on both sides along the charge transfer direct... | 12/25/2001 |
| 6278327 | Negative voltage detector A negative voltage detector is disclosed wherein a resistor divider circuit is used to translate a negative voltage into a standard CMOS logic low or logic high value. The small area consumed by the negative voltage divider of the present invention allows... | 08/21/2001 |
| 5990506 | Active pixel sensors with substantially planarized color filtering elements A semiconductor imaging system preferably having an active pixel sensor array compatible with a CMOS fabrication process. Color-filtering elements such as polymer filters and wavelength-converting phosphors can be integrated with the image sensor.... | 11/23/1999 |
| 5861642 | Semiconductor device having charge transfer device equipped with three semiconductor layers of same conductivity type with mutually different concentrations The semiconductor device of the present invention is equipped with a plurality of photodiodes, a horizontal transfer part and a vertical transfer part, and in particular, the horizontal transfer part or the vertical transfer part has a configuration descr... | 01/19/1999 |
| 5767538 | Integrated photodiode/transimpedance amplifier An integrated circuit photodetector includes a transimpedance amplifier including a differential amplifier stage with PNP emitter-coupled transistors and a PNP input transistor which are biased only by base currents of the emitter-coupled transistors, to ... | 06/16/1998 |
| 5744831 | Solid-state image pick-up device A solid-state image pick-up device 20 having a photoreceiving section 3 disposed on the obverse surface of a substrate 2 and performing photoelectric conversion. A readout gate 5 is disposed at one end of the photoreceiving section 3. A channel stop 8 is ... | 04/28/1998 |
| 5734195 | Semiconductor wafer for epitaxially grown devices having a sub-surface getter region In a semiconductor wafer according to this invention, an epitaxial layer is formed on the surface of a semiconductor substrate, a second element which is not the same but homologous as a first element constituting the semiconductor substrate is present to... | 03/31/1998 |
| 5635738 | Infrared solid-state image sensing apparatus An infrared solid-state image sensing apparatus is provided with a plurality of photoelectric converting sections arranged vertically and horizontally in a matrix pattern on a semiconductor substrate of a first conducting type; a plurality of vertical CCD... | 06/03/1997 |
| 5581099 | CCD solid state image device which has a semiconductor substrate with a P-type region with an N-type region formed therein by injection of arsenic In a CCD solid state image sensing device in which a photosensitive section is constructed by a photodiode formed by a PN junction between a first P-type well region and an N-type impurity diffusion region formed on an N-type silicon substrate, the N-type... | 12/03/1996 |
| 5262661 | Solid-state image pickup device, having increased charge storage and improved electronic shutter operation The impurity density of a photoelectric transducer n-layer (7) and the impurity density of a p-layer (6) of an impurity region in which the electric transducer (7) and a transfer channel (9) are formed, are each distributed to have its maximum value in a ... | 11/16/1993 |
| 5155362 | Infra-red radiation imaging device arrangements An imaging device arrangement comprises infra-red radiation detector elements (10) and signal-processing circuitry including at least one charge-transfer line (30). The detector elements (10) are preferably cadmium mercury telluride photodiodes formed in ... | 10/13/1992 |
| 5005063 | CCD imaging sensor with flashed backside metal film A backside illuminated CCD imaging sensor for reading out image charges from wells of the array of pixels is significantly improved for blue, UV, far UV and low energy x-ray wavelengths (1-5000Å) by so overthinning the backside as to place the depletion ... | 04/02/1991 |
| 4952995 | Infrared imager An infrared imager (10) is disclosed for sensing infrared radiation. The imager (10) comprises a detection layer (14) of semiconductor material which is operable to detect the occurrence of infrared radiation and generate free charge carriers in response ... | 08/28/1990 |
