Did You Know...
...that the x-ray was discovered purely by accident? When German physicist Wilhelm Konrad von Roentgen was experimenting with cathode rays in 1895, he put an activated Crookes tube in a book and went out to lunch. When he returned, he discovered that a key that had also been placed in the book showed up as an image on the developed film!
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| Number | Title | Issue Date |
| 8159005 | Image sensor An image sensor and manufacturing method thereof are provided. The image sensor can include a readout circuitry, an interconnection, a second interlayer dielectric, an image sensing device, a contact plug, and a sidewall dielectric. The contact plug can electrically... | 04/17/2012 |
| 8148755 | Solid-state imaging device and manufacturing method thereof A solid-state imaging device including: light-receiving units which are formed in rows and columns; a transfer channel formed in each column; first and second transfer electrodes that are formed in the same layer and deposited alternately above the transfer channel;... | 04/03/2012 |
| 8129761 | Contacts for CMOS imagers and method of formation Low leakage contacts on leakage sensitive areas of a CMOS imager, such as a floating diffusion region or a photodiode, are disclosed. At least one low leakage polysilicon contact is provided over a leakage sensitive area of a CMOS imager. The polysilicon contact com... | 03/06/2012 |
| 8115237 | Solid-state image pickup element and solid-state image pickup device having a transfer electrode formed on the entire sidewall of a hole A solid-state image pickup element comprises a first-conductive type planar semiconductor layer formed on a second-conductive type planar semiconductor layer, a hole portion formed in the first-conductive type planar semiconductor layer to define a hole therein, and... | 02/14/2012 |
| 8084790 | Image sensing device and packaging method thereof An image sensing device and packaging method thereof is disclosed. The packaging method includes the steps of a) providing an image sensing module, having a light-receiving region exposed, on a first substrate; b) forming a plurality of first contacts around the lig... | 12/27/2011 |
| 7960762 | Solid-state image sensing device including solid-state image sensor having a pillar-shaped semiconductor layer It is an object to provide a CCD solid-state image sensor, in which an area of a read channel is reduced and a rate of a surface area of a light receiving portion (photodiode) to an area of one pixel is increased. There is provided a solid-state image sensor, includ... | 06/14/2011 |
| 7956388 | Solid-state image pickup element and solid-state image pickup device It is intended to provide a solid-state image pickup element capable of reducing an area of a read channel to increase a light-receiving area. The solid-state image pickup element comprises a p-type planar semiconductor, a hole formed in the p-type planar semiconduc... | 06/07/2011 |
| 7928477 | Solid-state imaging apparatus A solid-state imaging apparatus, controlling a potential on a semiconductor substrate for an electronic shutter operation, includes: a first semiconductor region of the first conductivity type for forming a photoelectric conversion region; a second semiconductor reg... | 04/19/2011 |
| 7915648 | Light-receiving element and display device A light-receiving element includes: a first-conductivity-type semiconductor region configured to be formed over an element formation surface; a second-conductivity-type semiconductor region configured to be formed over the element formation surface; an intermediate ... | 03/29/2011 |
| 7872284 | Pixel with strained silicon layer for improving carrier mobility and blue response in imagers An imager having a pixel cell having an associated strained silicon layer. The strained silicon layer increases charge transfer efficiency, decreases image lag, and improves blue response in imaging devices. ... | 01/18/2011 |
| 7838910 | Memory devices including spacers of different materials Memory devices include a semiconductor substrate and a plurality of wordlines on the semiconductor substrate. A ground select line is on the semiconductor substrate on a first side of the wordlines and a string select line is on the semiconductor substrate on a seco... | 11/23/2010 |
| 7781806 | Optical erase memory structure A method for providing an optical erase memory structure including: forming a metal-insulator-metal memory cell; positioning a light emitting diode adjacent to the metal-insulator-metal memory cell; and emitting a light emission from the light emitting diode for era... | 08/24/2010 |
| 7723757 | Vertical nonvolatile memory cell, array, and operation A vertical nonvolatile memory cell with a charge storage structure includes a charge control structure with three nodes. Example embodiments include the individual memory cell, an array of such memory cells, methods of operating the memory cell or array of memory ce... | 05/25/2010 |
| 7709863 | Solid state imaging device A solid state imaging device in which γ characteristic is obtained and enlargement of dynamic range is provided. The solid state imaging device of the present invention includes a vertical overflow function and has a feature in which potential of a semiconductor su... | 05/04/2010 |
| 7705374 | Solid-state image pickup device and driving method of solid-state image pickup device A solid-state image pickup device including: a pixel region on a semiconductor substrate, the pixel region including: a sensor region for photoelectrically converting incident light; a vertical CCD formed on one side of the sensor region with a readout region interp... | 04/27/2010 |
| 7687832 | Method of fabricating a storage gate pixel design A method of fabricating a pixel cell having a shutter gate structure. First and second charge barriers are respectively created between a photodiode and a first charge storage region and between the first storage region and a floating diffusion region. A global shut... | 03/30/2010 |
| 7638823 | Solid-state imaging device and method of manufacturing said solid-state imaging device It is an object to provide solid-state imaging device, which can easily be manufactured and has a high reliability, and a method of manufacturing the solid-state imaging device. In the present invention, a manufacturing method comprises the steps of forming a plural... | 12/29/2009 |
| 7612392 | Image sensor with a gate electrode between the photoelectric conversion region and the charge detection region, the gate electrode comprising p-type and n-type regions adjacent to one another and method of fabricating the same Example embodiments relate to an image sensor and a fabrication method thereof. An image sensor may include a semiconductor substrate. A charge transfer structure may be formed on the semiconductor substrate. The charge transfer structure may include a gate insulati... | 11/03/2009 |
| 7442910 | High dynamic range cascaded integration pixel cell A cascaded imaging storage system for a pixel is disclosed for improving intrascene dynamic range. Charges accumulated in a first capacitor spill over into a second capacitor when a charge storage capacity of the first capacitor is exceeded. A third capacitor may al... | 10/28/2008 |
| 7432540 | Dual conversion gain gate and capacitor combination A pixel cell array architecture having a dual conversion gain. A dual conversion gain element is coupled between a floating diffusion region and a respective storage capacitor. The dual conversion gain element having a control gate switches in the capacitance of the... | 10/07/2008 |
| 7429750 | Solid-state element and solid-state element device A solid-state element has: a semiconductor layer formed on a substrate, the semiconductor layer having a first layer that corresponds to an emission area of the solid-state element to and a second layer through which current is supplied to the first layer; a light d... | 09/30/2008 |
| 7427790 | Image sensor with gain control An image sensor having a plurality of pixels; each pixel includes one or more photosensitive elements that collect charge in response to incident light; one or more transfer mechanisms that respectively transfer the charge from the one or more photosensitive element... | 09/23/2008 |
| 7425734 | Thin-film transistor array with ring geometry An improved transistor array for a display or sensor device is described. The display or sensor device includes a plurality of pixels. Each pixel includes a width and a length. Each pixel is addressed by a transistor. The transistor addressing each pixel has a chann... | 09/16/2008 |
| 7417268 | Image sensor An image sensor including a pixel assembly, each pixel including a photodiode and an access transistor connected to a read circuit, the photodiode and the access transistor being formed in and above a first semiconductor substrate, all or part of the read circuit be... | 08/26/2008 |
| 7411230 | Solid-state imaging device and method of manufacturing said solid-state imaging device It is an object to provide solid-state imaging device, which can easily be manufactured and has a high reliability, and a method of manufacturing the solid-state imaging device. In the present invention, a manufacturing method comprises the steps of forming a plural... | 08/12/2008 |
| 7408214 | Dynamic random access memory trench capacitors DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined. ... | 08/05/2008 |
| 7402882 | Methods to eliminate amplifier glowing artifact in digital images captured by an image sensor A charge coupled device includes a substrate; a plurality of image pixels arranged in a two dimensional array in the substrate for capturing an electronic representation of an image and for transferring charge in a first direction; a transfer mechanism for transferr... | 07/22/2008 |
| 7397066 | Microelectronic imagers with curved image sensors and methods for manufacturing microelectronic imagers Microelectronic imagers with curved image sensors and methods for manufacturing curved image sensors. In one embodiment, a microelectronic imager device includes an imager die having a substrate, a curved microelectronic image sensor having a face with a convex and/... | 07/08/2008 |
| 7397067 | Microdisplay packaging system Some embodiments provide a microdisplay integrated circuit (IC), a substantially transparent protective cover coupled to the microdisplay IC, and a base coupled to the microdisplay IC. Thermal expansion characteristics of the base may be substantially similar to the... | 07/08/2008 |
| 7388239 | Frame shutter pixel with an isolated storage node A frame shutter type device provides a separated well in which the storage node is located. The storage node is also shielded by a light shield to prevent photoelectric conversion. ... | 06/17/2008 |
| 7382003 | Solid-state image pick-up unit and method of manufacturing the same A solid-state image pick-up unit comprises: a semiconductor substrate comprising an area in which a photoelectric converting portion is formed; and an electric charge transfer portion that transfers an electric charge formed by the photoelectric converting portion, ... | 06/03/2008 |
| 7371621 | Thin film transistor array panel and fabrication The present invention provides a manufacturing method of a thin film transistor array panel, which includes forming a gate line on a substrate; forming a gate insulating layer, a semiconductor layer, and an ohmic contact on the gate line; forming a first conducting ... | 05/13/2008 |
| 7372070 | Organic field effect transistor and method of manufacturing the same To provide an organic field effect transistor with stable characteristics and a long life span, an organic field effect transistor includes a gate electrode 8 formed on an organic semiconductor film 2 made of an organic semiconductor material with a ga... | 05/13/2008 |
| 7364644 | Silver selenide film stoichiometry and morphology control in sputter deposition A method of sputter depositing silver selenide and controlling the stoichiometry and nodular defect formations of a sputter deposited silver-selenide film. The method includes depositing silver-selenide using a sputter deposition process at a pressure of about 0.3 m... | 04/29/2008 |
| 7358108 | CMOS image sensor and method for fabricating the same A CMOS image sensor and a method for fabricating the same are disclosed, in which the boundary between an active region and a field region is not damaged by ion implantation. The method for fabricating a CMOS image sensor includes forming a trench in a first conduct... | 04/15/2008 |
| 7358995 | Captured-image-signal processing method and apparatus and imaging apparatus An imaging apparatus includes a solid-state imaging device that outputs a captured image signal in current mode, which in turn is subjected to CDS processing in current mode by a current signal detector, thus suppressing FPN noise. A captured image signal output by ... | 04/15/2008 |
| 7355229 | Masked spacer etching for imagers The invention relates to a dual masked spacer etch for improved dark current performance in imagers. After deposition of spacer material such as oxide, N-channel regions are first opened for N+ source/drain implant and P-channel regions are then opened fo... | 04/08/2008 |
| 7352417 | Array substrate for LCD device having metal-diffusion film and manufacturing method thereof The present invention is an array substrate for use in a liquid crystal display device, which includes a gate electrode, a gate line and a gate pad electrode on a substrate, wherein all of the gate electrode, the gate line and the gate pad electrode have a first bar... | 04/01/2008 |
| 7348593 | Thin film transistor and method of fabricating the same An organic thin film transistor (OTFT) having an adhesive layer and a method of fabricating the same. The OTFT includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode and on remaining exposed portions of the substrate, a... | 03/25/2008 |
| 7348614 | Solid-state imaging device, production method and drive method thereof, and camera A solid-state imaging device capable of reducing an eclipse (blocking) of an incident light at a circumferential portion of a light receiving portion and realizing a larger angle of view and high-speed driving. A single-layer transfer electrode configuration of form... | 03/25/2008 |
