Class 257/224 - Channel confinement

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the majority carrier charge transfer
No. of patents: 113
Last issue date: 01/10/2012

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Number	Title	Issue Date
8093630	Semiconductor device and lateral diffused metal-oxide-semiconductor transistor The invention provides a semiconductor device and a lateral diffused metal-oxide-semiconductor transistor. The semiconductor device includes a substrate having a first conductive type. A gate is disposed on the substrate. A source doped region is formed in the subst...	01/10/2012
7541627	Method and apparatus for improving sensitivity in vertical color CMOS image sensors The invention describes in detail the structure of a CMOS image sensor pixel that senses color of impinging light without having absorbing filters placed on its surface. The color sensing is accomplished by having a vertical stack of three-charge detection nodes pla...	06/02/2009
7456448	Semiconductor device and method for producing the same A semiconductor device, including a first MIS-type transistor formed in a first region of a semiconductor region, the first region being of a first conductivity type, the first MIS-type transistor including: a first gate insulating film formed on the first region; a...	11/25/2008
7420147	Microchannel plate and method of manufacturing microchannel plate A method of fabricating a multichannel plate is provided. The method includes providing a N layers, each layer having an array of wells formed therein. The N layers are aligned and stacked. The stack of N layers are sliced along a first and second line of the array ...	09/02/2008
7365380	Photoelectric conversion device, method for manufacturing the same and image pickup system An object of the present invention is to provide a photoelectric conversion device, wherein improvement of charge transfer properties when charge is output from a charge storage region and suppression of dark current generation during charge storage are compatible w...	04/29/2008
7329926	Semiconductor device with constricted current passage A semiconductor device including a gate located over a semiconductor substrate and a source/drain region located adjacent the gate. The source/drain region is bounded by an isolation structure that includes a constricted current passage between the gate and the sour...	02/12/2008
7285808	Solid-state imaging device and method for manufacturing solid-state imaging device A plurality of optical sensors (4) are arranged in a surface region of a semiconductor substrate (6) in a matrix pattern, and electric charge generated by the optical sensors (4) is transferred by first and second transfer electrodes (12 ...	10/23/2007
7235824	Active gate CCD image sensor An active gate includes a substrate of a first conductivity type, a channel of a second conductivity type formed in the substrate, a first gate region of the first conductivity type formed in a corresponding first portion of the channel, and a first contact connecte...	06/26/2007
7221586	Memory utilizing oxide nanolaminates Structures, systems and methods for transistors utilizing oxide nanolaminates are provided. One transistor embodiment includes a first source/drain region, a second source/drain region, and a channel region therebetween. A gate is separated from the channel region b...	05/22/2007
7193893	Write once read only memory employing floating gates Structures and methods for write once read only memory employing floating gates are provided. The write once read only memory cell includes a floating gate transistor formed in a modified dynamic random access memory (DRAM) fabrication process. The floating gate tra...	03/20/2007
7183597	Quantum wire gate device and method of making same The present invention relates to a method of forming a quantum wire gate device. The method includes patterning a first oxide upon a substrate. Preferably the first oxide pattern is precisely and uniformly spaced to maximize quantum wire numbers per unit area. The m...	02/27/2007
7170111	Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same A nitride-based field effect transistor includes a substrate, a channel layer comprising InAlGaN formed on the substrate, source and drain ohmic contacts in electrical communication with the channel layer, and a gate contact formed on the channel layer. At least one...	01/30/2007
7166509	Write once read only memory with large work function floating gates Structures and methods for write once read only memory employing floating gates are provided. The write once read only memory cell includes a floating gate transistor formed in a modified dynamic random access memory (DRAM) fabrication process. The floating gate tra...	01/23/2007
7154140	Write once read only memory with large work function floating gates Structures and methods for write once read only memory employing floating gates are provided. The write once read only memory cell includes a floating gate transistor formed in a modified dynamic random access memory (DRAM) fabrication process. The floating gate tra...	12/26/2006
7147050	Recuperator construction for a gas turbine engine A counter-flow recuperator formed from annular arrays of recuperator core segments. The recuperator core segments are formed from two opposing sheets of fin fold material coined to form a primary surface zone disposed between two flattened manifold zones. Each prima...	12/12/2006
7129979	Image sensor pixel for global electronic shuttering A pixel design for CMOS image sensors that has a high frame rate potential and, therefore, provides motion capture capabilities. The pixel is designed for global electronic shuttering so every pixel is exposed simultaneously to images incident upon the pixel array p...	10/31/2006
7112494	Write once read only memory employing charge trapping in insulators Structures and methods for write once read only memory employing charge trapping in insulators are provided. The write once read only memory cell includes a metal oxide semiconductor field effect transistor having a first source/drain region, a second source/drain r...	09/26/2006
7110030	Solid state image pickup apparatus In the solid state image pickup apparatus, in order to achieve complete transfer of the charge from the photodiode to the floating diffusion area, there is provided a pickup apparatus having a photoelectric conversion element, a transfer switch consisting of a MOS t...	09/19/2006
7078745	CMOS imager with enhanced transfer of charge and low voltage operation A dopant gradient region of a first conductivity type and a corresponding channel impurity gradient below a transfer gate and adjacent a charge collection region of a CMOS imager photodiode are disclosed. The channel impurity gradient in the transfer gate provides a...	07/18/2006
7065873	Recuperator assembly and procedures A construction of recuperator core segments is provided which insures proper assembly of the components of the recuperator core segment, and of a plurality of recuperator core segments. Each recuperator core segment must be constructed so as to prevent nesting of fi...	06/27/2006
6998656	Transparent double-injection field-effect transistor A double-injection field-effect transistor has an anode, a cathode, a substantially transparent channel, a substantially transparent gate insulator, and at least one substantially transparent gate electrode. The transistor may also have a substantially transparent a...	02/14/2006
6996009	NOR flash memory cell with high storage density Structures and methods for NOR flash memory cells, arrays and systems are provided. The NOR flash memory cell includes a vertical floating gate transistor extending outwardly from a substrate. The floating gate transistor having a first source/drain region, a second...	02/07/2006
6970370	Ferroelectric write once read only memory for archival storage Structures and methods for ferroelectric write once read only memory adapted to be programmed for long retention archival storage are provided. The write once read only memory cell includes a charge amplifier transistor. The transistor includes a source region, a dr...	11/29/2005
6960809	Polysilicon thin film transistor and method of forming the same A polysilicon thin film transistor and a method of forming the same is provided. A poly-island layer is formed over a substrate. A gate insulation layer is formed over the poly-island layer. A gate is formed over the gate insulation layer. Using the gate as a mask, ...	11/01/2005
6952362	Ferroelectric write once read only memory for archival storage Structures and methods for ferroelectric write once read only memory adapted to be programmed for long retention archival storage are provided. The write once read only memory cell includes a charge amplifier transistor. The transistor includes a source region, a dr...	10/04/2005
6806805	Low loss high Q inductor A high Q inductive clement with low losses, high inductance and high efficiency is disclosed. The high Q inductive element with one or more inductive loops is formed over a silicon micro structure with thin support elements formed by deep plasma etching in bulk sili...	10/19/2004
6759721	Integrated semiconductor DRAM-type memory device and corresponding fabrication process An integrated memory location structure includes an isolated semiconductor layer between the source region and the drain region of a transistor, and between the channel region and the control gate of the transistor. The isolated semiconductor layer includes two pote...	07/06/2004
6573541	Charge coupled device with channel well A solid-state CCD device suitable for forming into arrays and for use with suitable hardware to form video image capture devices and methods for fabricating same are provided....	06/03/2003
6555854	Charge coupled device with multi-focus lengths A charge coupled device (CCD) with multi-focus lengths is provided. The arrays of optical sensors with a plurality of transparent plates in parallel disposed thereon are disposed on a substrate. By way of either of changing the thicknesses of the transpar...	04/29/2003
6483132	Charge coupled device with separate isolation region A charge coupled device including: a substrate; a semiconductor layer overlying the substrate; a semiconductor layer overlying the semiconductor layer; a charge storage layer existing on the semiconductor layer and sandwiched by a pair of isolation region...	11/19/2002
6369415	Back side thinned CCD with high speed channel stop A back thinned CCD has at least first and second parallel n- signal channel segments and a p++ channel stop region between the signal channels....	04/09/2002
6369414	Charge coupled device having charge accumulating layer free from tow-dimensional effect under miniaturization and process for fabrication thereof A charge coupled device has an n-type charge accumulating layer equal to or less than 5 micron in width, and the unit cells suffer from reduction of signal charge accumulated therein and an increased pulse height of a pulse signal for a substrate shutter,...	04/09/2002
6365945	Submicron semiconductor device having a self-aligned channel stop region and a method for fabricating the semiconductor device using a trim and etch A submicron semiconductor device having a self-aligned channel stop implant region, and a method for fabricating the semiconductor device using a trim and etch is disclosed. The semiconductor device includes a plurality of active regions separated by insu...	04/02/2002
6310933	Charge transferring device and charge transferring method which can reduce floating diffusion capacitance A charge transferring device includes a detection MOSFET for detecting a signal charge, a reset MOSFET for removing the signal charge after the signal charge is detected. The reset MOSFET includes a floating diffusion layer to which the signal charge is t...	10/30/2001
6150678	Method and pattern for avoiding micro-loading effect in an etching process A method for avoiding micro-loading effect during etching is disclosed. The method comprises the steps of: providing a semiconductor substrate with a layer to be patterned and etched formed thereover; forming a masking layer over the layer to be patterned...	11/21/2000
6150680	Field effect semiconductor device having dipole barrier A field effect semiconductor device including a substrate, a dipole barrier formed on the substrate, a channel layer formed on the dipole barrier, and source, gate and drain electrodes formed on the channel layer. The dipole barrier provides a potential b...	11/21/2000
6114718	Solid state image sensor and its fabrication A dipping in potential well due to direct contact between transfer electrodes and metal wiring causes a drop in transfer efficiency through a CCD register. In order to eliminate or at least reduce the potential dipping, an N- -type impurity lay...	09/05/2000
6020607	Semiconductor device having junction field effect transistors An N- type epitaxial layer is formed on a P type semiconductor substrate, and a P+ type insulative isolating layer is so formed as to reach the semiconductor substrate from the surface of the N- type epitaxial layer to ...	02/01/2000
5990503	Selectable resolution CCD sensor A CCD sensor includes a readout register formed in substrate, the readout register including a channel, a bus structure and a connection structure. The bus structure includes plural spaced element sets, each element set including a first clock conductor. ...	11/23/1999
5929471	Structure and method for CCD sensor stage selection A control structure for stage selection in a CCD sensor includes a well formed in a substrate and a channel formed in the well, the channel defining a channel direction. A bus structure is disposed over the channel and oriented transversely to the channel...	07/27/1999

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Class 257/224 - Channel confinement