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| Number | Title | Issue Date |
| 8183603 | Solid-state imaging device for inhibiting dark current A solid-state imaging device includes a substrate having a first surface and a second surface, light being incident on the second surface side; a wiring layer disposed on the first surface side; a photodetector formed in the substrate and including a first region of... | 05/22/2012 |
| 8115236 | Solid state imaging device A solid state imaging device in which γ characteristic is obtained and enlargement of dynamic range is provided. The solid state imaging device includes a vertical overflow function and has a feature in which potential of a semiconductor substrate is changed from a... | 02/14/2012 |
| 7977710 | Solid state imaging device A solid state imaging device in which Υ characteristic is obtained and enlargement of dynamic range is provided. The solid state imaging device of the present invention includes a vertical overflow function and has a feature in which potential of a semiconductor su... | 07/12/2011 |
| 7557390 | Solid image capturing element for power saving at output section and manufacturing method for the same A solid image capturing element comprising a plurality of vertical shift registers arranged to each correspond to a column of a plurality of light receiving pixels in a matrix arrangement, a horizontal shift register provided on an output side of the plurality of ve... | 07/07/2009 |
| 7501671 | Semiconductor device and method of manufacturing the same The present invention is characterized in that a semiconductor film containing a rare gas element is formed on a crystalline semiconductor film obtained by using a catalytic element via a barrier layer, and the catalytic element is moved from the crystalline semicon... | 03/10/2009 |
| 7473944 | Solid-state imaging device A solid-state imaging device includes a semiconductor substrate including: a plurality of light-receptive portions that are arranged one-dimensionally or two-dimensionally; a vertical transfer portion that transfers signal electric charge read out from the light-rec... | 01/06/2009 |
| 7470942 | Thin film transistor array and electrostatic discharge protective device thereof A thin film transistor array, an electrostatic discharge protective device thereof, and methods for fabricating the same are provided. The thin film transistor array comprises a plurality of scan lines, a plurality of data lines, a first shorting bar, and a second s... | 12/30/2008 |
| 7442910 | High dynamic range cascaded integration pixel cell A cascaded imaging storage system for a pixel is disclosed for improving intrascene dynamic range. Charges accumulated in a first capacitor spill over into a second capacitor when a charge storage capacity of the first capacitor is exceeded. A third capacitor may al... | 10/28/2008 |
| 7439565 | Active devices array substrate and repairing method thereof An active device array substrate including a substrate, a plurality of active devices, a plurality of the first lead lines, a plurality of the second lead lines and a first floating light-shielding layer is provided. The substrate has a display region and a peripher... | 10/21/2008 |
| 7432530 | Solid-state imaging device and method of manufacturing same A solid-state imaging device includes: a substrate; a photo-receiving portion formed in the substrate; a wiring layer formed on the substrate and having a trench being formed on a region directly above the photo-receiving portion; and a light guiding member provided... | 10/07/2008 |
| 7427740 | Image sensor with drain region between optical black regions An image sensor comprises an active pixel region that includes a plurality of unit pixels arranged in a matrix pattern, a first optical black region formed adjacent to the active pixel region, wherein a plurality of shaded unit pixels are arranged therein, a drain r... | 09/23/2008 |
| 7420235 | Solid-state imaging device and method for producing the same In the solid-state imaging device of the present invention having a photoelectric conversion section and a charge transfer section equipped with a charge transfer electrode for transferring an electric charge generated in the photoelectric conversion section, the ch... | 09/02/2008 |
| 7417271 | Electrode structure having at least two oxide layers and non-volatile memory device having the same An electrode structure having at least two oxide layers that more reliably switch and operate without the use of additional devices and a non-volatile memory device having the same are provided. The electrode structure may include a lower electrode, a first oxide la... | 08/26/2008 |
| 7402882 | Methods to eliminate amplifier glowing artifact in digital images captured by an image sensor A charge coupled device includes a substrate; a plurality of image pixels arranged in a two dimensional array in the substrate for capturing an electronic representation of an image and for transferring charge in a first direction; a transfer mechanism for transferr... | 07/22/2008 |
| 7393723 | Method of manufacturing a semiconductor device A method of manufacturing a semiconductor device that forms laminate layers includes the steps of reducing contamination containing the single bond of carbon on at least one part of a surface on which the laminate films are formed by activated hydrogen before the la... | 07/01/2008 |
| 7378691 | Solid-state image sensor A solid-state image sensor capable of suppressing blooming and increase of a dark current also when an n-type impurity concentration in a transfer channel region is increased is obtained. In this solid-state image sensor, gate electrodes of a prescribed pixel and an... | 05/27/2008 |
| 7372089 | Solid-state image sensing device A solid-state image sensing device provided with photoelectric conversion films stacked above a semiconductor substrate, comprising: first impurity regions as defined herein; second impurity regions as defined herein; signal charge reading regions as defined herein;... | 05/13/2008 |
| 7365380 | Photoelectric conversion device, method for manufacturing the same and image pickup system An object of the present invention is to provide a photoelectric conversion device, wherein improvement of charge transfer properties when charge is output from a charge storage region and suppression of dark current generation during charge storage are compatible w... | 04/29/2008 |
| 7364960 | Methods for fabricating solid state image sensor devices having non-planar transistors Methods for fabricating CMOS image sensor devices are provided, wherein active pixel sensors are constructed with non-planar transistors having vertical gate electrodes and channels, which minimize the effects of image lag and dark current. ... | 04/29/2008 |
| 7365786 | Solid state image sensing apparatus with enhanced sensitivity realized by improving linear characteristic of photodiode and its driving method A driver unit of a solid state image sensing apparatus changes the substrate bias voltage from a first bias voltage to a second bias voltage which is lower than the first bias voltage and is for making a height of an overflow barrier higher than a height of the barr... | 04/29/2008 |
| 7361877 | Pinned-photodiode pixel with global shutter An image sensor includes a two-dimensional array of pixels having a photodetector for collecting charge in response to incident light; a storage region adjacent the photodetector that receives the charge from the photodetector; a sense node adjacent the storage regi... | 04/22/2008 |
| 7355228 | Image sensor pixel having photodiode with multi-dopant implantation An active pixel using a photodiode with multiple species of N type dopants is disclosed. The pixel comprises a photodiode formed in a semiconductor substrate. The photodiode is an N− region formed within a P-type region. The N− region is fo... | 04/08/2008 |
| 7354789 | CMOS image sensor and method for fabricating the same CMOS image sensor and method for fabricating the same, the CMOS image sensor including a second conductive type semiconductor substrate having an active region and a device isolation region defined therein, wherein the active region has a photodiode region and a tra... | 04/08/2008 |
| 7355222 | Imaging device having a pixel cell with a transparent conductive interconnect line and the method of making the pixel cell The invention relates to an imaging device having a pixel cell with a transparent conductive material interconnect line for focusing incident light onto a photosensor and providing an electrical connection to pixel circuitry, and the method of making the same. ... | 04/08/2008 |
| 7352047 | Systems and methods for integration of heterogeneous circuit devices A heterogeneous device comprises a substrate and a plurality of heterogeneous circuit devices defined in the substrate. In embodiments, a plurality of heterogeneous circuit devices are integrated by successively masking and ion implanting the substrate. The heteroge... | 04/01/2008 |
| 7341930 | Systems and methods for integration of heterogeneous circuit devices A heterogeneous device comprises a substrate and a plurality of heterogeneous circuit devices defined in the substrate. In embodiments, a plurality of heterogeneous circuit devices are integrated by successively masking and ion implanting the substrate. The heteroge... | 03/11/2008 |
| 7323731 | Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite ... | 01/29/2008 |
| 7294872 | Solid state image pickup device and its manufacture method PROBLEM To provide a high quality solid state image pickup device. SOLUTION Impurities are implanted into a semiconductor substrate to form vertical transfer channels for transferring electric charges in a first direction and to form a drain near each of the vertica... | 11/13/2007 |
| 7285808 | Solid-state imaging device and method for manufacturing solid-state imaging device A plurality of optical sensors (4) are arranged in a surface region of a semiconductor substrate (6) in a matrix pattern, and electric charge generated by the optical sensors (4) is transferred by first and second transfer electrodes (12 ... | 10/23/2007 |
| 7282448 | Substrate and method of forming substrate for fluid ejection device A method of forming an opening through a substrate having a first side and a second side opposite the first side includes forming spaced etch stops in the first side of the substrate, etching into the substrate from the second side toward the first side to the space... | 10/16/2007 |
| 7279770 | Isolation techniques for reducing dark current in CMOS image sensors A structure for isolating areas in a semiconductor device is provided. The structure includes a trench having first and second portions formed in a substrate. The first portion has a first width, and the second portion has a second width and is below the first porti... | 10/09/2007 |
| 7265397 | CCD imager constructed with CMOS fabrication techniques and back illuminated imager with improved light capture An optical sensor circuit for generating signals corresponding to received photoelectrons is formed on a single monolithic substrate and includes a charge coupled device (CCD) array. The array is formed of a plurality of pixels constructed by a standard CMOS process... | 09/04/2007 |
| 7259790 | MOS type solid-state image pickup device and driving method comprised of a photodiode a detection portion and a transfer transistor An MOS type solid-state image pickup device including pixels each of which comprises a photodiode PD, a detection portion N and a transfer transistor QT for transferring the charges accumulated in the photodiode PD to the detection portion N, wherein the ... | 08/21/2007 |
| 7253392 | Image sensor with photo diode gate A photodiode has a photodiode gate structure on the surface of the substrate. The photodiode may be located in a pixel sensor cell comprising a substrate having a first surface level. The photodiode has a first doped region of a first conductivity type and a second ... | 08/07/2007 |
| 7253461 | Snapshot CMOS image sensor with high shutter rejection ratio A pixel image sensor has an isolation barrier and diffusion well connected to a biasing voltage to prevent substrate charge leakage caused by photoelectrons generated in the substrate beneath a photon sensing area of the pixel image sensor from drifting to a storage... | 08/07/2007 |
| 7253834 | Image pickup apparatus having image pickup optical system An image pickup apparatus comprising a first lens unit which comprises at least a negative lens element and at least a positive lens element and has negative refractive power, a second lens unit which has positive refractive power, and an optical path bending reflec... | 08/07/2007 |
| 7253019 | Buried, fully depletable, high fill factor photodiodes A semiconductor detector of electromagnetic radiation which utilizes a dual-purpose electrode which extends significantly beyond the edge of a photodiode. This configuration reduces the sensitivity of device performance on small misalignments between manufacturing s... | 08/07/2007 |
| 7247892 | Imaging array utilizing thyristor-based pixel elements An improved imaging array (and corresponding method of operation) includes a plurality of heterojunction thyristor-based pixel elements disposed within resonant cavities formed on a substrate. Each thyristor-based pixel element includes complementary n-type and p-ty... | 07/24/2007 |
| 7247898 | Self adjusting transfer gate APS An active pixel sensor circuit comprising a photodiode, a storage node, and a transfer gate between the photodiode and storage node, where the potential barrier between the photodiode and the storage region is maintained during charge accumulation, thereby preventin... | 07/24/2007 |
| 7247899 | Semiconductor device, photoelectric conversion device and method of manufacturing same In a photoelectric conversion device having a buried layer in a part of an anode and a cathode of a photodiode, such as a CCD having a sensor structure and a CMOS sensor, well of the same conduction type as the conduction type of the buried layer can be disposed in ... | 07/24/2007 |
