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Combination Beverage Container and Spittoon
A combination beverage container and spittoon includes a bottom portion including outer wall and a first inner wall defining a spittoon space.
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| Number | Title | Issue Date |
| 8154057 | Solid-state imaging device and driving method thereof A solid-state imaging device includes: a photoelectric converting section comprising a photo-diode; a charge storage section; a charge transfer section; a first control gate section provided between the photoelectric converting section and the charge storage section... | 04/10/2012 |
| 8138528 | Solid state image pickup device and manufacturing method therefor A MOS-type solid-state image pickup device, on a semiconductor substrate, includes a photoelectric conversion unit having a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor re... | 03/20/2012 |
| 8129760 | Image sensor and image reading apparatus A structure which meets a high-quality reading requirement and realizes high-speed color reading when the reading section of a color image forming apparatus adopts a color contact image sensor using CCDs as reading element arrays is disclosed. The image sensor of a ... | 03/06/2012 |
| 8053815 | Solid-state image pickup device, method of manufacturing solid-state image pickup device, and image pickup device Disclosed herein is a solid-state image pickup device including, a plurality of light receiving units, a transfer channel, a first transfer electrode, a second transfer electrode, first wiring, and second wiring. ... | 11/08/2011 |
| 8008690 | Amorphous-silicon thin film transistor and shift register having the same An amorphous-silicon thin film transistor and a shift resister shift resister having the amorphous-silicon TFT include a first conductive region, a second conductive region and a third conductive region. The first conductive region is formed on a first plane spaced ... | 08/30/2011 |
| 8004020 | Solid-state image capturing device, camera module and electronic information device A solid-state image capturing device includes a plurality of electrode pads for inputting and outputting a signal or voltage from and to the outside, a plurality of photoelectric conversion elements, a planarization film for planarizing the difference in the level o... | 08/23/2011 |
| 8004019 | Solid state image pickup device P type semiconductor well regions 8 and 9 for device separation are provided in an upper and lower two layer structure in conformity with the position of a high sensitivity type photodiode PD, and the first P type semiconductor well region 8 at ... | 08/23/2011 |
| 7842979 | Solid-state imaging device and method of driving the same A solid-state imaging device includes an N-type semiconductor substrate, an N-type impurity region provided in the surficial portion of the N-type semiconductor substrate, a photo-electric conversion unit formed in the N-type impurity region, a charge accumulation u... | 11/30/2010 |
| 7842978 | Imaging device by buried photodiode structure An n-type region as a charge storage region of a photodiode is buried in a substrate. The interface between silicon and a silicon oxide film is covered with a high concentration p-layer and a lower concentration p-layer is formed only in the portion immediately belo... | 11/30/2010 |
| 7795649 | Microfeature workpieces having microlenses and methods of forming microlenses on microfeature workpieces Microfeature workpieces having microlenses and methods of forming microlenses on microfeature workpieces are disclosed herein. In one embodiment, a method for forming microlenses includes forming a plurality of shaping members on a microfeature workpiece between adj... | 09/14/2010 |
| 7786515 | Solid-state imaging device and method of manufacturing the same A solid-state imaging device including: a semiconductor substrate on which an imaging region having a light receiving section is formed; and a predetermined layer formed on the semiconductor substrate by planarization processing using liquid containing a metal eleme... | 08/31/2010 |
| 7768040 | Imager device with electric connections to electrical device An imager device is disclosed including a first substrate having an array of photo-sensitive elements formed thereon, a first conductive layer formed above the first substrate, a first conductive member extending through the first substrate, the first conductive mem... | 08/03/2010 |
| 7750376 | Solid-state imaging device and imaging apparatus A CCD type solid-state imaging device includes: a photoelectric conversion element (n layer 2, p layer 3) formed in a semiconductor substrate 1; a charge transfer channel 5 that transfers electric charges generated in the photoelectric co... | 07/06/2010 |
| 7737475 | Stacked pixel for high resolution CMOS image sensor Provided is a solid-state CMOS image sensor, specifically a CMOS image sensor pixel that has stacked photo-sites, high sensitivity, and low dark current. In an image sensor including an array of pixels, each pixel includes: a standard photo-sensing and charge storag... | 06/15/2010 |
| 7705373 | Solid state image pickup device and manufacturing method therefor A MOS-type solid-state image pickup device includes a photoelectric conversion unit having a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type forming a pn-junction with the first semiconductor regio... | 04/27/2010 |
| 7687831 | Solid state image pickup device P type semiconductor well regions 8 and 9 for device separation are provided in an upper and lower two layer structure in conformity with the position of a high sensitivity type photodiode PD, and the first P type semiconductor well region 8 at ... | 03/30/2010 |
| 7675092 | Radiation tolerant CCD structure A CCD structure (20) tolerant to the adverse formation of traps resulting from exposure to irradiation by particles such as protons and neutrons is described. The CCD comprises an image plane (22) having a number of parallel transfer channels. Path def... | 03/09/2010 |
| 7560754 | CMOS solid-state imaging device and method of manufacturing the same as well as drive method of CMOS solid-state imaging device A CMOS solid-state imaging device configured to restrain the occurrence of white spots and dark current caused by pixel defects, and also to increase the saturation signal amount. Adjacent pixels are separated by an element isolation portion formed of a diffusion la... | 07/14/2009 |
| 7525134 | CMOS imager pixel designs A charge storage capacitor which is connected to various light sensitive and/or electrical elements of a CMOS imager, as well as methods of formation, are disclosed. The charge storage capacitor may be formed entirely over a field oxide region of the CMOS imager, en... | 04/28/2009 |
| 7498621 | Image sensing device and method of A two-dimensional, temporally modulated electromagnetic wavefield, preferably in the ultraviolet, visible or infrared spectral range, can be locally detected and demodulated with one or more sensing elements. Each sensing element consists of a resistive, transparent... | 03/03/2009 |
| 7485903 | Solid-state imaging device A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fix... | 02/03/2009 |
| 7436010 | Solid state imaging apparatus, method for driving the same and camera using the same A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to... | 10/14/2008 |
| 7432530 | Solid-state imaging device and method of manufacturing same A solid-state imaging device includes: a substrate; a photo-receiving portion formed in the substrate; a wiring layer formed on the substrate and having a trench being formed on a region directly above the photo-receiving portion; and a light guiding member provided... | 10/07/2008 |
| 7429750 | Solid-state element and solid-state element device A solid-state element has: a semiconductor layer formed on a substrate, the semiconductor layer having a first layer that corresponds to an emission area of the solid-state element to and a second layer through which current is supplied to the first layer; a light d... | 09/30/2008 |
| 7425734 | Thin-film transistor array with ring geometry An improved transistor array for a display or sensor device is described. The display or sensor device includes a plurality of pixels. Each pixel includes a width and a length. Each pixel is addressed by a transistor. The transistor addressing each pixel has a chann... | 09/16/2008 |
| 7420261 | Bulk nitride mono-crystal including substrate for epitaxy The invention relates to a substrate for epitaxy, especially for preparation of nitride semiconductor layers. Invention covers a bulk nitride mono-crystal characterized in that it is a mono-crystal of gallium nitride and its cross-section in a plane perpendicular to... | 09/02/2008 |
| 7420235 | Solid-state imaging device and method for producing the same In the solid-state imaging device of the present invention having a photoelectric conversion section and a charge transfer section equipped with a charge transfer electrode for transferring an electric charge generated in the photoelectric conversion section, the ch... | 09/02/2008 |
| 7411229 | Semiconductor device, a manufacturing method thereof, and a camera A semiconductor device includes a transfer channel for transferring charge generated by photoelectric conversion, an insulating film formed on the transfer channel, and a transfer electrode for applying a transfer voltage to the transfer channel via the insulating f... | 08/12/2008 |
| 7408214 | Dynamic random access memory trench capacitors DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined. ... | 08/05/2008 |
| 7400004 | Isolation structures for preventing photons and carriers from reaching active areas and methods of formation Regions of an integrated circuit are isolated by a structure that includes at least one isolating trench on the periphery of an active area. The trench is deep, extending at least about 0.5 μm into the substrate. The isolating structure prevents photons and electro... | 07/15/2008 |
| 7397066 | Microelectronic imagers with curved image sensors and methods for manufacturing microelectronic imagers Microelectronic imagers with curved image sensors and methods for manufacturing curved image sensors. In one embodiment, a microelectronic imager device includes an imager die having a substrate, a curved microelectronic image sensor having a face with a convex and/... | 07/08/2008 |
| 7388187 | Cross-talk reduction through deep pixel well implant for image sensors An image sensor device includes a semiconductor substrate having a first type of conductivity, a semiconductor layer having the first type of conductivity formed on the semiconductor substrate, and pixels formed in the semiconductor layer. The semiconductor layer in... | 06/17/2008 |
| 7382003 | Solid-state image pick-up unit and method of manufacturing the same A solid-state image pick-up unit comprises: a semiconductor substrate comprising an area in which a photoelectric converting portion is formed; and an electric charge transfer portion that transfers an electric charge formed by the photoelectric converting portion, ... | 06/03/2008 |
| 7370530 | Package for MEMS devices A package for packaging one or more MEMS devices is disclosed. A package in accordance with an illustrative embodiment of the present invention can include a packaging structure having a base section, a top section, and an interior cavity adapted to contain a number... | 05/13/2008 |
| 7372491 | CMOS image sensor Provided is a photographing apparatus (CMOS image sensor) that enables enlarging the area that the PD occupies by making simple the layout within a pixel wherein a photo-electric conversion element and a plurality of CMOS transistors are laid out. The photographing ... | 05/13/2008 |
| 7368846 | Microactuator with displacement sensing function and deformable mirror including the microactuator According to the present invention, a moving element Ai such as an electrostatically driven actuator is displaced by supplying a drive signal thereto. Meanwhile, a displacement sensing section 6 senses its displacement and a calibrating section 15 auto... | 05/06/2008 |
| 7369334 | Optical device with alignment compensation An optical device is provided which includes a plurality of optical modules and an alignment compensation module. Each optical module includes an optical component fixedly coupled to a relative reference mount. The relative reference mount is configured to attach to... | 05/06/2008 |
| 7365380 | Photoelectric conversion device, method for manufacturing the same and image pickup system An object of the present invention is to provide a photoelectric conversion device, wherein improvement of charge transfer properties when charge is output from a charge storage region and suppression of dark current generation during charge storage are compatible w... | 04/29/2008 |
| 7361877 | Pinned-photodiode pixel with global shutter An image sensor includes a two-dimensional array of pixels having a photodetector for collecting charge in response to incident light; a storage region adjacent the photodetector that receives the charge from the photodetector; a sense node adjacent the storage regi... | 04/22/2008 |
| 7359579 | Image sensor package and its manufacturing method Disclosed are an image sensor package and a method for manufacturing the same. A sealing portion is formed between an image sensor die and a glass substrate to completely isolate the sensing portion of the image sensor die from external environment. Electrically con... | 04/15/2008 |
