Did You Know...
...that it was melting ice cream that inspired the invention of the outboard motor? It was a lovely August day and Ole Evinrude was rowing his boat to his favorite island picnic spot. As he rowed, he watched his ice cream melt and wished he had a faster way to get to the island. At that moment the idea for the outboard motor was born!
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| Number | Title | Issue Date |
| 8183557 | (Al,In,Ga,B)N device structures on a patterned substrate A nitride light emitting diode, on a patterned substrate, comprising a nitride interlayer having at least two periods of alternating layers of InxGa1−xN and InyGa1−yN where 0 | 05/22/2012 |
| 8106381 | Semiconductor structures with rare-earths The present invention discloses structures to increase carrier mobility using engineered substrate technologies for a solid state device. Structures employing rare-earth compounds enable heteroepitaxy of different semiconductor materials of different orientations. | 01/31/2012 |
| 8093583 | Light emitting diode having barrier layer of superlattice structure A light emitting diode (LED) having a barrier layer with a superlattice structure is disclosed. In an LED having an active region between an GaN-based N-type compound semiconductor layer and a GaN-based P-type compound semiconductor layer, the active region comprise... | 01/10/2012 |
| 8044386 | Nitride semiconductor light emitting device and fabricating method thereof A nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed on the first nitride semiconductor layer and including at least one barrier layer grown under hydrogen atmosphere of a high temperature; and a second... | 10/25/2011 |
| 8022392 | Semiconductor layer structure with superlattice The semiconductor layer structure includes an active layer and a superlattice composed of stacked layers of III-V compound semiconductors of a first and at least one second type. Adjacent layers of different types in the superlattice differ in composition with respe... | 09/20/2011 |
| 7985965 | Quantum computing device and method including qubit arrays of entangled states using negative refractive index lenses A quantum computing device and method employs qubit arrays of entangled states using negative refractive index lenses. A qubit includes a pair of neutral atoms separated by or disposed on opposite sides of a negative refractive index lens. The neutral atoms and nega... | 07/26/2011 |
| 7960715 | Semiconductor heterostructure nanowire devices Nanowire devices comprising core-shell or segmented nanowires are provided. In these nanowire devices, strain can be used as a tool to form metallic portions in nanowires made from compound semiconductor materials, and/or to create nanowires in which embedded quantu... | 06/14/2011 |
| 7755080 | Method for forming quantum dot, and quantum semiconductor device and method for fabricating the same The method for forming a quantum dot according to the present invention comprises the step of forming an oxide in a dot-shape on the surface of a semiconductor substrate 10, the step of removing the oxide to form a concavity 16 in the position from whi... | 07/13/2010 |
| 7718994 | Array substrates for use in liquid crystal displays and fabrication methods thereof Array substrates for use in TFT-LCDs and fabrication methods thereof. A transparent conductive layer, a first metal layer, a first insulating layer, a semiconductor layer, a second insulating layer and a sacrificial layer are sequentially formed on a substrate. With... | 05/18/2010 |
| 7709826 | Rare earth-oxides, rare earth-nitrides, rare earth-phosphies, and ternary alloys with silicon Atomic layer epitaxy (ALE) is applied to the fabrication of new forms of rare-earth oxides, rare-earth nitrides and rare-earth phosphides. Further, ternary compounds composed of binary (rare-earth oxides, rare-earth nitrides and rare-earth phosphides) mixed with sil... | 05/04/2010 |
| 7692182 | Group III nitride based quantum well light emitting device structures with an indium containing capping structure Group III nitride based light emitting devices and methods of fabricating Group III nitride based light emitting devices are provided. The emitting devices include an n-type Group III nitride layer, a Group III nitride based active region on the n-type Group III nit... | 04/06/2010 |
| 7429748 | High speed GE channel heterostructures for field effect devices A method and a layered heterostructure for forming high mobility Ge channel field effect transistors is described incorporating a plurality of semiconductor layers on a semiconductor substrate, and a channel structure of a compressively strained epitaxial Ge layer h... | 09/30/2008 |
| 7414260 | Vertical tunneling transistor The disclosed embodiments relate to a vertical tunneling transistor that may include a channel disposed on a substrate. A quantum dot may be disposed so that an axis through the channel and the quantum dot is substantially perpendicular to the substrate. A gate may ... | 08/19/2008 |
| 7408183 | Low cost InGaAIN based lasers A method and structure for producing lasers having good optical wavefront characteristics, such as are needed for optical storage includes providing a laser wherein an output beam emerging from the laser front facet is essentially unobstructed by the edges of the se... | 08/05/2008 |
| 7407858 | Resistance random access memory devices and method of fabrication A method of fabricating a RRAM includes preparing a substrate and forming a bottom electrode ori the substrate. A PCMO layer is deposited on the bottom electrode using MOCVD or liquid MOCVD, followed by a post-annealing process. The deposited PCMO thin film has a cr... | 08/05/2008 |
| 7402832 | Quantum dots of group IV semiconductor materials The invention relates to a quantum dot. The quantum dot comprises a core including a semiconductor material Y selected from the group consisting of Si and Ge. The quantum dot also comprises a shell surrounding the core. The quantum dot is substantially defect free s... | 07/22/2008 |
| 7397062 | Heterojunction bipolar transistor with improved current gain One aspect of the present invention is directed to a heterojunction bipolar transistor (HBT) comprising: a substrate; a buffer layer of undoped semiconductor material; a sub-collector layer; a collector layer; a base layer; an emitter layer; a emitter cap layer; and... | 07/08/2008 |
| 7378681 | Ridge waveguide device surface passivation by epitaxial regrowth A method for reducing surface recombination in an area next to a mesa in devices containing active and passive sections. This is obtained by growing, by metalorganic vapor phase epitaxy (MOVPE), a thin epitaxial layer of material with larger bandgap than a waveguide... | 05/27/2008 |
| 7375367 | Semiconductor light-emitting device having an active region with aluminum-containing layers forming the lowermost and uppermost layer A semiconductor light-emitting device fabricated in a nitride material system has an active region disposed over a substrate. The active region comprises a first aluminium-containing layer forming the lowermost layer of the active region, a second aluminium-containi... | 05/20/2008 |
| 7372077 | Semiconductor device A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed o... | 05/13/2008 |
| 7368368 | Multi-chamber MOCVD growth apparatus for high performance/high throughput In one embodiment the present invention is a method of conducting multiple step multiple chamber chemical vapor deposition while avoiding reactant memory in the relevant reaction chambers. The method includes depositing a layer of semiconductor material on a substra... | 05/06/2008 |
| 7368309 | Nitride semiconductor and fabrication method thereof The present invention relates to nitride semiconductor, and more particularly, to GaN-based nitride semiconductor and fabrication method thereof. The nitride semiconductor according to the present invention comprises a substrate; a GaN-based buffer layer formed in a... | 05/06/2008 |
| 7358525 | Quantum dots of group IV semiconductor materials The invention relates to a quantum dot. The quantum dot comprises a core including a semiconductor material Y selected from the group consisting of Si and Ge. The quantum dot also comprises a shell surrounding the core. The quantum dot is substantially defect free s... | 04/15/2008 |
| 7351993 | Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon Atomic layer epitaxy (ALE) is applied to the fabrication of new forms of rare-earth oxides, rare-earth nitrides and rare-earth phosphides. Further, ternary compounds composed of binary (rare-earth oxides, rare-earth nitrides and rare-earth phosphides) mixed with sil... | 04/01/2008 |
| 7335908 | Nanostructures and methods for manufacturing the same A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps.... | 02/26/2008 |
| 7332746 | Light-emitting apparatus A novel configuration of a light-emitting apparatus that can emit white light, in which a primary light source composed of a group III nitride compound semiconductor is used in combination with a secondary light source including a fluorescent material which emits li... | 02/19/2008 |
| 7329895 | Dual wavelength detector A sensor comprises two photodiodes sensitive to different wavelengths. The photodiodes or detectors are stacked in a vertical relationship to each other. A bandpass filter is provided to limit the wavelengths of light reaching the detectors. The photodiodes are form... | 02/12/2008 |
| 7303969 | Method of making interband tunneling diodes Interband tunnel diodes which are compatible with Si-based processes such as, but not limited to, CMOS and SiGe HBT fabrication. Interband tunnel diodes are disclosed (i) with spacer layers surrounding a tunnel barrier; (ii) with a quantum well adjacent to, but not ... | 12/04/2007 |
| 7286637 | Optical thin film and mirror using the same To provide an optical thin film structure capable of efficiently dissipating heat in an optical thin film which is generated upon irradiating a surface of an X-ray mirror made up of the optical thin film with an X-ray. The optical thin film having an isotope purity ... | 10/23/2007 |
| 7276724 | Series interconnected optoelectronic device module assembly Series interconnection of optoelectronic device modules is disclosed. Each device module includes an active layer disposed between a bottom electrode and a transparent conducting layer. An insulating layer is disposed between the bottom electrode of a first device m... | 10/02/2007 |
| 7276389 | Article comprising metal oxide nanostructures and method for fabricating such nanostructures This invention discloses novel field emitters which exhibit improved emission characteristics combined with improved emitter stability, in particular, new types of carbide or nitride based electron field emitters with desirable nanoscale, aligned and sharped-tip emi... | 10/02/2007 |
| 7259406 | Semiconductor optical element A semiconductor optical element having a includes an n-type GaAs buffer layer, an n-type AlGaInP cladding layer, a first InGaAsP (including zero As content)guide layer without added dopant impurities, an InGaAsP (including zero In content) active layer, a second InG... | 08/21/2007 |
| 7259030 | Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices A method of making a light active sheet. A bottom substrate having an electrically conductive surface is provided. A hotmelt adhesive sheet is provided. Light active semiconductor elements, such as LED die, are embedded in the hotmelt adhesive sheet. The LED die eac... | 08/21/2007 |
| 7253431 | Method and apparatus for solution processed doping of carbon nanotube A method is provided for doping a carbon nanotube. The method comprises exposing the nanotube to a one-electron oxidant in a solution phase. A method is also provided for forming a carbon nanotube FET device. ... | 08/07/2007 |
| 7244959 | Detection of electromagnetic radiation using micromechanical multiple quantum wells structures An apparatus and method for detecting electromagnetic radiation employs a deflectable micromechanical apparatus incorporating multiple quantum wells structures. When photons strike the quantum-well structure, physical stresses are created within the sensor, similar ... | 07/17/2007 |
| 7244957 | Group III nitride compound semiconductor light-emitting device and method for producing the same In a Group III nitride compound semiconductor light-emitting device which outputs lights from a semiconductor plane, about 1.5 μm in height of a Group III nitride compound semiconductor projection part 150, which is made of Mg-doped p-type GaN having Mg dopi... | 07/17/2007 |
| 7242703 | Organic injection laser An unipolar organic injection laser in which electrically-stimulated intraband transitions result in lasing. An active region includes at least one organic injector layer and at least one organic emitter layer. Each organic emitter layer has a first energy level and... | 07/10/2007 |
| 7241648 | Array substrates for use in liquid crystal displays and fabrication methods thereof Array substrates for use in TFT-LCDs and fabrication methods thereof. A transparent conductive layer, a first metal layer, a first insulating layer, a semiconductor layer, a second insulating layer and a sacrificial layer are sequentially formed on a substrate. With... | 07/10/2007 |
| 7242049 | Memory device A floating gate transistor has a reduced barrier energy at an interface with an adjacent gate insulator, allowing faster charge transfer across the gate insulator at lower voltages. Data is stored as charge on the floating gate. The data charge retention time on the... | 07/10/2007 |
| 7235809 | Semiconductor channel on insulator structure A method including forming a via dielectric layer on a semiconductor device substrate; forming a trench dielectric layer on the via dielectric layer; forming a trench through the trench dielectric layer to expose the via dielectric layer; forming a via in the via di... | 06/26/2007 |
