Did You Know...
...Chester Carlson was a patent agent who tired of having to make multiple copies of patent applications using the only duplication method available at the time: carbon paper. In 1959 he came up with a new copying system and took it to IBM for evaluation. The "experts" at IBM determined potential sales to be only 5,000 units because people wouldn't want to use a bulky machine when they had carbon paper. Carlson's invention was the xerography process, the company founded on the system is Xerox.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8138527 | Transistor and semiconductor device An accumulation mode transistor has an impurity concentration of a semiconductor layer in a channel region at a value higher than 2×1017 cm−3 to achieve a large gate voltage swing. ... | 03/20/2012 |
| 7312524 | Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made A method for fabricating a thermally stable ultralow dielectric constant film including Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing a plasma enhanced chemical vapor deposition (“PECVD”) process is disclosed. Electronic de... | 12/25/2007 |
| 7291506 | Magnetic memory device and method of manufacturing the same A method of manufacturing a magnetic memory device includes forming an insulation layer on a substrate, forming a lower electrode on the insulation layer, forming a magneto-resistive film on an upper surface of the lower electrode, the magneto-resistive film includi... | 11/06/2007 |
| 7285764 | Solid state imaging device and method of driving the same An imaging device comprising: a photoelectric conversion element generating photo-generated charges; an accumulation well accumulating the charges; a modulation well storing the charges; a modulation transistor having a channel threshold voltage controlled by the st... | 10/23/2007 |
| 7253456 | Diode structure and integral power switching arrangement A diode structure having high ESD stability is described. Other embodiments provide an integral power switching arrangement having an integrated low leakage diode. ... | 08/07/2007 |
| 7235825 | IGBT with injection regions between MOSFET cells A cellular MOSgated device of planar or trench topology has base injection regions formed between pairs of cells to inject minority carriers to modulate the resistivity of the drift region. ... | 06/26/2007 |
| 7217658 | Process modulation to prevent structure erosion during gap fill High density plasma chemical vapor deposition and etch back processes fill high aspect ratio gaps without liner erosion or further underlying structure attack. The characteristics of the deposition process are modulated such that the deposition component of the proc... | 05/15/2007 |
| 7199405 | Pixel cell with high storage capacitance for a CMOS imager A pixel sensor cell for use in a CMOS imager exhibiting improved storage capacitance. The source follower transistor is formed with a large gate that has an area from about 0.3 μm2 to about 10 μm2. The large size of the source follower gate e... | 04/03/2007 |
| 7199410 | Pixel structure with improved charge transfer An active pixel is described comprising a semiconductor substrate and a radiation sensitive source of carriers in the substrate, such as for instance, a photodiode. A non-carrier storing, carrier collecting region in the substrate is provided for attracting carriers... | 04/03/2007 |
| 7173297 | Solid-state imaging device The invention provides a solid-state imaging device including a pixel array having a plurality of pixels arranged in a matrix. The pixels can each include a photo diode that generates carriers depending on the intensity of incident light, an accumulation region that... | 02/06/2007 |
| 7170117 | Image sensor with improved dynamic range and method of formation Embodiments of the invention provide an image sensor having an improved dynamic range. A pixel cell comprises at least one transistor structure. The transistor structure comprises at least one semiconductor channel region, at least one gate for controlling the chann... | 01/30/2007 |
| 7075128 | Charge transfer element having high output sensitivity A charge transfer element comprising a reverse conductive type well formed on the surface of one conductive type semiconductor substrate, the one conductive type channel region extending in one direction relative to the well, a transfer electrode formed intersecting... | 07/11/2006 |
| 6974973 | Apparatus for determining temperature of an active pixel imager and correcting temperature induced variations in an imager An imager temperature sensor and a current correction apparatus are provided which use dark pixel measurements from an imager chip during operation together with a fabrication process constant as well as a chip dependent constant to calculate chip temperature. The c... | 12/13/2005 |
| 6838301 | Silicon-on-insulator (SOI) active pixel sensors with the photosite implemented in the substrate Active pixel sensors for a high quality imager are fabricated using a silicon-on-insulator (SOI) process by integrating the photodetectors on the SOI substrate and forming pixel readout transistors on the SOI thin-film. The technique can include forming silicon isla... | 01/04/2005 |
| 6734075 | CMOS device having high-density resistance elements A CMOS device includes a reverse electric conduction type well (2) formed on a monoelectric conduction type semiconductor substrate (1), a first MOS transistor (3) of a reverse electric conduction type channel formed on a surface of the semicond... | 05/11/2004 |
| 6723594 | Pixel cell with high storage capacitance for a CMOS imager A pixel sensor cell for use in a CMOS imager exhibiting improved storage capacitance. The source follower transistor is formed with a large gate that has an area from about 0.3 μm2 to about 10 μm2. The large size of the source follower gate e... | 04/20/2004 |
| 6514781 | Maintaining the state of a MEMS device in the event of a power failure A method and apparatus for maintaining the state of a MEMS device in the event of a power failure are disclosed. The apparatus and method may be used with a MEMS device generally having one or more MEMS elements moveably coupled to a substrate that uses e... | 02/04/2003 |
| 6515319 | Field-effect-controlled transistor and method for fabricating the transistor An active surface with a source area, a channel area and a drain area is provided in a semiconductor substrate. Each of the areas lie adjacent to a main surface of the semiconductor substrate. At least one trench is provided in the main surface of the sem... | 02/04/2003 |
| 6486489 | Transistor There is provided a transistor, which includes a deoxyribonucleic acid molecule or a deoxyribonucleic acid molecule aggregate as a part of structural materials, has a source electrode member, a drain electrode member and a gate electrode member, in which ... | 11/26/2002 |
| 6448592 | Charge coupled device, and method of manufacturing such a device It is known in charge coupled devices to use a dual layer of silicon oxide and silicon nitride as the gate dielectric. Since silicon nitride is practically impermeable to hydrogen, the nitride layer is usually provided with openings through which hydrogen... | 09/10/2002 |
| 6407440 | Pixel cell with high storage capacitance for a CMOS imager A pixel sensor cell for use in a CMOS imager exhibiting improved storage capacitance. The source follower transistor is formed with a large gate that has an area from about 0.3 μm2 to about 10 μm2. The large size of the source foll... | 06/18/2002 |
| 6369413 | Split-gate virtual-phase CCD image sensor with a diffused lateral overflow anti-blooming drain structure and process of making Generally, and in one form of the invention, a monolithic solid state image-sensing device is disclosed. The device utilizes only a single layer of polysilicon deposition in its fabrication process that is split into two or more phases by very narrow gaps... | 04/09/2002 |
| 5986296 | CCD type semiconductor device The disclosure relates to charge-coupled devices taking the form of shift registers and, more specifically, to those working in the MPP (Multi-Pinned Phase) mode, i.e. with high negative polarisation of the electrodes during the phases of waiting or of in... | 11/16/1999 |
| 5982019 | Semiconductor device with a diffused resistor The object of the semiconductor apparatus to be used in the semiconductor integrated circuit is to restrain the time dependent fluctuations of the resistance value. To achieve the object, the semiconductor apparatus comprises an active area formed on one ... | 11/09/1999 |
| 5828091 | Interline charge coupled device solid state image sensor The present invention provides an interline solid state image sensor comprising the following elements. A plurality of vertical charge coupled device resistors are provided, each of which extends in a vertical direction. The vertical charge coupled device... | 10/27/1998 |
| 5712497 | Amplifying type photoelectric converting device and amplifying type solid-state imaging apparatus using the same An amplifying type photoelectric converting device is disclosed. The device includes: a semiconductor substrate of a first conductive type; a well portion of a second conductive type for accumulating signal charges generated by photoelectric conversion; a... | 01/27/1998 |
| 5637891 | Charge coupled device having different insulators A charged coupled device structure (CCD) and a method for fabricating the CCD structure, which induces a maximum potential distribution difference by utilizing gate insulation films having different physical properties. The charged coupled device includes... | 06/10/1997 |
| 5635738 | Infrared solid-state image sensing apparatus An infrared solid-state image sensing apparatus is provided with a plurality of photoelectric converting sections arranged vertically and horizontally in a matrix pattern on a semiconductor substrate of a first conducting type; a plurality of vertical CCD... | 06/03/1997 |
| 5464997 | Charge detection device, a method for producing the same, and a charge transfer and detection apparatus including such a charge detection device A charge detection device for converting a signal charge consisting of carriers of a first polarity externally provided into a voltage signals, the charge detection device comprising a MOS transistor, the MOS transistor including: a first semiconductor la... | 11/07/1995 |
| 5359213 | Charge transfer device and solid state image sensor using the same A charge transfer device and a solid state image sensor using the same, capable of transferring signal charge at a high signal to noise ratio (S/N ratio) and preventing an occurrence of dark current. They include a double-layered charge transfer path stru... | 10/25/1994 |
| 5289022 | CCD shift register having a plurality of storage regions and transfer regions therein A CCD shift register which is improved in the transfer efficiency with a minimal decrease in the amount of electric charge that can be handled. The CCD shift register has an array of transfer electrodes, each comprising a pair of storage and transfer gate... | 02/22/1994 |
| 5192990 | Output circuit for image sensor An output circuit for sequentially receiving and converting charge collected in the photoelements of an image sensor and converting such charge into an output voltage. The output circuit includes a buried-channel LDD transistor having gate, source and dra... | 03/09/1993 |
| 5018172 | Charge-coupled SPS memory device In a charge-coupled SPS memory device, in which the transport takes place according to the "pushing" principle, it may occur that during the SP transport charge is injected into the substrate and diffuses via the substrate into the memory mat. In order to... | 05/21/1991 |
| 4985738 | Semiconductor switching device A semiconductor thyristor of the Static Induction type having a split-gate structure, e.g., driving gates and non-driving gates, for controlling cathode-anode current flow. The split-gate structure comprises a plurality of primary gates formed in recesses... | 01/15/1991 |
| 4753900 | Method of forming electrodes aligned with respect to a level of implantation in a substrate and a method of forming a charge transfer filter The invention provides a method of forming electrodes aligned with respect to an implantation level in a substrate, including the following main phases: formation of a dielectric layer on a substrate; formation of semiconducting or conducting elements which ar... | 06/28/1988 |
| 4733302 | Image sensor or an image sensing apparatus An image sensing apparatus comprises: a photo detecting unit for converting an optical image to electrical information; and unnecessary charge transfer unit, formed in the end portion of the photo detecting unit, for transferring the unnecessary charges; ... | 03/22/1988 |
| 4672645 | Charge transfer device having an improved read-out portion A charge coupled device that includes an output portion having a field effect transistor disposed in the potential well channel to provide a non-destructive read-out of the analog value of a charge pocket located in the portion of such potential well chan... | 06/09/1987 |
| 4503450 | Accumulation mode bulk channel charge-coupled devices An accumulation-mode bulk channel CCD converts an electromagnetic radiation pattern into electrical signals. The device body may be of monocrystalline silicon and has a radiation-sensitive region which is of a first conductivity type determined by a dopan... | 03/05/1985 |
| 4331709 | Process of reducing density of fast surface states in MOS devices Fast surface states in MOS devices, such as SCCDs, are reduced by depositing a relatively thin amorphous layer containing silicon and hydrogen onto the SiO2 surface of such devices and annealing the resultant device in a non-oxidizing atmospher... | 05/25/1982 |
| 4315164 | Bidirectional charge control circuit A charge control circuit for bidirectionally transferring metered amounts of charge, selectively, through a transfer channel of a four gate electrode charge coupled device (CCD) is disclosed. The bidirectional charge control circuit is used primarily to i... | 02/09/1982 |
