Class 257/217 - Having a conductive means in direct contact with channel (e.g., non-insulated gate)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein an electrical conductor (e.g., electrode)
No. of patents: 80
Last issue date: 01/11/2011

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Number	Title	Issue Date
7868361	Semiconductor device with both I/O and core components and method of fabricating same A semiconductor device having a core device with a high-k gate dielectric and an I/O device with a silicon dioxide or other non-high-k gate dielectric, and a method of fabricating such a device. A core well and an I/O well are created in a semiconductor substrate an...	01/11/2011
7821042	Imaging device including a multiplier electrode An imaging device includes a first electrode for generating an electric field storing signal charges, a charge multiplication section for multiplying the stored signal charges, a second electrode for generating the electric field in the charge multiplication section...	10/26/2010
7367114	Method for plasma etching to manufacture electrical devices having circuit protection Methods of manufacturing a variety of circuit protection devices are provided as well as devices so manufactured. In an embodiment, a surface mount electrical device having a substrate and a pair of conductive electrodes connected to an electrical protection compone...	05/06/2008
7355248	Metal oxide semiconductor (MOS) device, metal oxide semiconductor (MOS) memory device, and method of manufacturing the same A semiconductor device includes a first semiconductor layer that is formed on a first insulating layer; a second insulating layer that is formed on the first semiconductor layer; a second semiconductor layer that is formed on the second insulating layer; a first gat...	04/08/2008
7342276	Method and apparatus utilizing monocrystalline insulator A semiconductor device, including: a semiconductor material; a conductive element; and a substantially monocrystalline insulator disposed between the semiconductor material and the conductive eleme...	03/11/2008
7265397	CCD imager constructed with CMOS fabrication techniques and back illuminated imager with improved light capture An optical sensor circuit for generating signals corresponding to received photoelectrons is formed on a single monolithic substrate and includes a charge coupled device (CCD) array. The array is formed of a plurality of pixels constructed by a standard CMOS process...	09/04/2007
7250330	Method of making an electronic package A method of making an electronic package is described, wherein a substrate is provided with a pattern of conductive pads and a portion of solder positioned on selected ones of the pattern of copper pads. The solder is then reflowed to form partial hemispherically sh...	07/31/2007
7247892	Imaging array utilizing thyristor-based pixel elements An improved imaging array (and corresponding method of operation) includes a plurality of heterojunction thyristor-based pixel elements disposed within resonant cavities formed on a substrate. Each thyristor-based pixel element includes complementary n-type and p-ty...	07/24/2007
7235824	Active gate CCD image sensor An active gate includes a substrate of a first conductivity type, a channel of a second conductivity type formed in the substrate, a first gate region of the first conductivity type formed in a corresponding first portion of the channel, and a first contact connecte...	06/26/2007
7087959	Metal-oxide-semiconductor device having an enhanced shielding structure An MOS device includes a semiconductor layer formed on a substrate, the substrate defining a horizontal plane and a vertical direction normal to the horizontal plane. First and second source/drain regions are formed in the semiconductor layer proximate an upper surf...	08/08/2006
7015120	Method of fabricating semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation A method of fabricating a semiconductor device includes the steps of forming (or providing) a series of layers formed on a substrate, the layers including a first plurality of layers including an n-type ohmic contact layer, a p-type modulation doped quantum well str...	03/21/2006
7012285	Semiconductor device A semiconductor device whose insertion loss is reduced and isolation characteristics are improved in a high frequency band by reducing the capacitance component when an FET is off is provided. FETs (30a, 30b) having a gate electrode with ...	03/14/2006
6870207	III-V charge coupled device suitable for visible, near and far infra-red detection A photon detector is obtained by using the intersubband absorption mechanism in a modulation doped quantum well(s). The modulation doping creates a very high electric field in the well which enables absorption of input TE polarized light and also conducts the carrie...	03/22/2005
6841811	Large area, fast frame rate charge coupled device Large area, fast frame rate, charge coupled devices (CCDs) are provided. Interline transfer CCDs can have interleaved pinned photodiodes and vertical shift registers. The interline transfer CCDs are ideal for producing high frame rate video images from a continuous ...	01/11/2005
6809379	Field effect transistor and method for producing a field effect transistor The invention relates to a field effect transistor with a drain region, a source region, a channel region and a gate region. The gate region is provided with a metal layer. ...	10/26/2004
6777722	Method and structure for double dose gate in a JFET A method for fabricating a junction field effect transistor (JFET) with a double dose gate structure. A trench is etched in the surface of a semiconductor substrate, followed by a low dose implant to form a first gate region. An anneal may or may not be performed af...	08/17/2004
6750485	Lock in pinned photodiode photodetector A lock in pinned photodiode photodetector includes a plurality of output ports which are sequentially enabled. Each time when the output port is enabled is considered to be a different bin of time. A specified pattern is sent, and the output bins are investigated to...	06/15/2004
6710381	Memory device structure with composite buried and raised bit line The present invention provides a memory structure, comprising: a substrate; a gate oxide layer disposed on a portion of the substrate; a gate structure disposed on the gate oxide layer; a buried bit line disposed in the substrate along both sides of the gate structu...	03/23/2004
6674133	Twin bit cell flash memory device The present invention provides a twin bit cell flash memory device and its fabricating method. The method is to first form a gate oxide layer on the surface of the silicon substrate followed by forming a polysilicon germanium (Si1-x Gex	01/06/2004
6670655	SOI CMOS device with body to gate connection A method and apparatus are provided for implementing a body contact in a silicon-on-insulator field effect transistor device. A SOI field effect transistor is provided having a body contact having a predefined resistance that provides a higher device thre...	12/30/2003
6664577	Semiconductor device includes gate insulating film having a high dielectric constant A semiconductor device comprising a semiconductor substrate and a MOSFET provided on the semiconductor substrate, the MOSFET including a gate insulating film and a gate electrode provided on the gate insulating film, wherein the gate insulating film has a...	12/16/2003
6559486	Etching mask, process for forming contact holes using same, and semiconductor device made by the process An etching mask having high etching selectivity for an inorganic interlayer film of SiO2 or Si3 N4, an organic interlayer film such as ARC and an electrically conductive film and a contact hole using such an etching mask, ...	05/06/2003
6518606	Semiconductor device permitting electrical measurement of contact alignment error A semiconductor device in which an integrated circuit is formed includes a resistance-measurement area with conductive members disposed in at least two different layers, and an electrode pattern. The electrode pattern includes contact plugs that, dependin...	02/11/2003
6515319	Field-effect-controlled transistor and method for fabricating the transistor An active surface with a source area, a channel area and a drain area is provided in a semiconductor substrate. Each of the areas lie adjacent to a main surface of the semiconductor substrate. At least one trench is provided in the main surface of the sem...	02/04/2003
6459106	Dynamic threshold voltage devices with low gate to substrate resistance Described is a dynamic threshold field effect transistor (DTFET) that includes a gate-to-body contact structure within the gate. By forming the gate-to-body contact structure that can reduce the gate-to-body contact resistance and increase the device pack...	10/01/2002
6445019	Lateral semiconductor device for withstanding high reverse biasing voltages A semiconductor body (11) has first and second opposed major surfaces (11a and 11b). First and second main regions (13 and 14) meet the second major surface (11b) and a voltage-sustaining zone is provided between the first and second regions (13 and 14). ...	09/03/2002
6392260	Architecture for a tapped CCD array A charge coupled device includes first and second pluralities of column registers and first and second register segments. The first plurality of column registers are splayed with respect to and on one side of a column direction line, and the second plural...	05/21/2002
6243434	BCD low noise high sensitivity charge detection amplifier for high performance image sensors The image sensor charge detection amplifier has a charge storage well 60, a charge sensor 32 for sensing charge levels in the charge storage well 60, a charge drain 28 adjacent to the charge storage well 60, and charge transfer structures for transferring...	06/05/2001
6175146	Semiconductor processing methods of forming integrated circuitry memory devices, methods of forming capacitor containers, methods of making electrical connection to circuit nodes and related integrated circuitry In one aspect, the invention provides a method of forming an integrated circuitry memory device. In one preferred implementation, a conductive layer is formed over both memory array areas and peripheral circuitry areas. A refractory metal layer is formed ...	01/16/2001
6150680	Field effect semiconductor device having dipole barrier A field effect semiconductor device including a substrate, a dipole barrier formed on the substrate, a channel layer formed on the dipole barrier, and source, gate and drain electrodes formed on the channel layer. The dipole barrier provides a potential b...	11/21/2000
5998847	Low voltage active body semiconductor device An active FET body device which comprises an active FET region including a gate, a body region and electrical connection between said gate and said body region that is located within the active FET region is provided along with various methods for fabrica...	12/07/1999
5994728	Field effect transistor and method for producing the same A method for producing a field effect transistor includes: a first step of forming an insulating film over a substrate; a second step of dry etching the insulating film to form a rectangular insulating pattern having side surfaces; a third step of forming...	11/30/1999
5814832	Electron emitting semiconductor device An electron emitting semiconductor device is provided with a P-type semiconductor layer arranged on a semiconductor substrate having an impurity concentration. A Schottky barrier electrode is arranged on a surface of the P-type semiconductor layer. Plural...	09/29/1998
5814810	Interline sensor employing photocapacitor gate An interline sensor is constructed using photocapacitors. The vertical shift register of the interline sensor is operated in a uniphase mode, i.e., holding one of the two phase ($c;2) at a D.C. potential while fluctuating the other phase ($c;1) betw...	09/29/1998
5640023	Spacer-type thin-film polysilicon transistor for low-power memory devices The cross-sectional area of a thin-film transistor (TFT) is decreased in order to minimize bitline to supply leakage of the TFT. This is accomplished by utilizing a spacer etch process to manufacture a TFT having a very narrow and thin channel in a contro...	06/17/1997
5576561	Radiation-tolerant imaging device A barrier at a uniform depth for an entire wafer is used to produce imaging devices less susceptible to noise pulses produced by the passage of ionizing radiation. The barrier prevents charge created in the bulk silicon of a CCD detector or a semiconducto...	11/19/1996
5567641	Method of making a bipolar gate charge coupled device with clocked virtual phase The charge coupled device cell has a semiconductor layer 20 of a first conductivity type, a buried channel 22 of a second conductivity type on the semiconductor layer 20, a first virtual gate 24 in the buried channel 22, the first virtual gate is switched...	10/22/1996
5546438	BCD low noise high sensitivity charge detection amplifier for high performance image sensors The image sensor charge detection amplifier has a charge storage well 60, a charge sensor 32 for sensing charge levels in the charge storage well 60, a charge drain 28 adjacent to the charge storage well 60, and charge transfer structures for transferring...	08/13/1996
5502318	Bipolar gate charge coupled device with clocked virtual phase The charge coupled device cell has a semiconductor layer 20 of a first conductivity type, a buried channel 22 of a second conductivity type on the semiconductor layer 20, a first virtual gate 24 in the buried channel 22, the first virtual gate is switched...	03/26/1996
5497020	Charge drain for a MIS device A semiconductor device which has a diffusion layer region in a semiconductor body, and a MIS transistor with a gate electrode formed on the semiconductor body that is connected to the diffusion layer region. The semiconductor device is made by the steps o...	03/05/1996

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Class 257/217 - Having a conductive means in direct contact with channel (e.g., non-insulated gate)