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| Number | Title | Issue Date |
| 8154056 | Solid-state imaging device, method of manufacturing solid-state imaging device and method of driving solid-state imaging device A solid-state imaging device capable of securing sufficient sensitivity and obtaining favorable characteristics is provided. The solid-state imaging device includes a charge-transfer portion 2 provided on one side of each column of light-receiving sens... | 04/10/2012 |
| 8106426 | Full color CMOS imager filter A full color complementary metal oxide semiconductor (CMOS) imaging circuit is provided. The imaging circuit is made up of an array of photodiodes including a plurality of pixel groups. Each pixel group supplies 3 electrical color signals, corresponding to 3 detecta... | 01/31/2012 |
| 7943968 | Charge transfer semiconductor device and manufacturing method thereof A charge coupled device is manufactured by using a crystalline silicon film that is formed by growing a crystal in parallel with a substrate by utilizing the nickel element with an amorphous silicon film used as a starting film. The crystal growth direction is made ... | 05/17/2011 |
| 7902574 | Solid state image pickup device and operating method thereof This invention provides a type of solid-state image pickup device characterized by the fact that for a solid-state image pickup device with a broad dynamic range, it is possible to suppress the dark current than photoelectrons overflowing from the photodiode, as wel... | 03/08/2011 |
| 7663165 | Transparent-channel thin-film transistor-based pixels for high-performance image sensors A pixel circuit, and method of forming a pixel circuit, an imager device, and a processing system include a photo-conversion device, a floating diffusion region for receiving and storing charge from the photo-conversion device, and a transparent transistor for use i... | 02/16/2010 |
| 7619265 | Molecular single electron transistor (MSET) detector device A molecular single electron transistor (MSET) detector device (14) is described that comprises at least one organic molecule (87) connecting a drain electrode (84) and a source electrode (82). In use, said at least one organic molecule ( | 11/17/2009 |
| 7595517 | Charge coupled device having diverged channel A charge coupled device comprises a semiconductor substrate of one conductive type, a first charge couple device having a series of electrodes linearly arranged on the semiconductor substrate, a second charge coupled device diverged into tow lines at an end of the f... | 09/29/2009 |
| 7586133 | Solid state imaging apparatus and driving method of solid state imaging apparatus A solid state imaging apparatus comprises a semiconductor substrate, photoelectric conversion elements, a vertical electric charge transferring device, a horizontal electric charge transferring device that temporarily stores the signal electric charges transferred f... | 09/08/2009 |
| 7535037 | Solid state image sensor devices having non-planar transistors CMOS image sensor devices are provided, wherein active pixel sensors are designed with non-planar transistors having vertical gate electrodes and channels, which minimize the effects of image lag and dark current. ... | 05/19/2009 |
| 7420235 | Solid-state imaging device and method for producing the same In the solid-state imaging device of the present invention having a photoelectric conversion section and a charge transfer section equipped with a charge transfer electrode for transferring an electric charge generated in the photoelectric conversion section, the ch... | 09/02/2008 |
| 7416916 | Solid-state image sensing device driving method and solid-state image sensing apparatus A method of driving a solid-state image sensing device comprises plural photoelectric conversion devices arranged in rows and columns perpendicular to the rows, VCCDs through which charges generated by the photoelectric conversion devices are transferred in the colu... | 08/26/2008 |
| 7372497 | Effective method to improve sub-micron color filter sensitivity An image sensor device and method for forming said device are described. The image sensor structure comprises a substrate with photodiodes, an interconnect structure formed on the substrate, a color filter layer above the interconnect structure, a first microlens ar... | 05/13/2008 |
| 7365379 | Solid state imaging unit and endoscope A solid state image pickup device includes: a first area defined on a principal surface of a semiconductor substrate; a second area defined in an area adjacent to the first area along a first direction; and a third area defined in an area adjacent to the second area... | 04/29/2008 |
| 7364960 | Methods for fabricating solid state image sensor devices having non-planar transistors Methods for fabricating CMOS image sensor devices are provided, wherein active pixel sensors are constructed with non-planar transistors having vertical gate electrodes and channels, which minimize the effects of image lag and dark current. ... | 04/29/2008 |
| 7353593 | Method for assembling micro structures A method for making three-dimensional structures comprises providing a plurality of components, each of which is moveably coupled to a substrate. The components may be pivotally coupled to the substrate by one or more micromachined hinges. The components are moved u... | 04/08/2008 |
| 7321392 | Solid state imaging device with lateral overflow drain and driving method thereof achieving low power consumption A solid state imaging device comprises channel regions of one conductivity type arranged to extend along a first direction in parallel to each other with predetermined intervals on one surface of a semiconductor substrate, drain regions of the one conductivity type ... | 01/22/2008 |
| 7301184 | Solid state image sensor having planarized structure under light shielding metal layer Shift register electrodes are formed in an imaging area and a peripheral area through use of a single layer of conductive film, and a thick insulating film is deposited over those electrodes and planarized. The thick insulating film overlying the shift register elec... | 11/27/2007 |
| 7295235 | Solid-state image pickup device A solid-state image pickup device includes a photoelectric conversion portion for generating signal electric charges in accordance with an amount of incident light, a plurality of color filters, and a flattening layer formed on the plurality of color filters. A thic... | 11/13/2007 |
| 7274052 | CCD charge-splitter adjustment by static charge gradient A charge splitter for separating an incoming charge packet into two outgoing packets while the charge is in a static state, i.e., not while it is flowing down a channel or over a barrier. A splitting gate may have a biasing charge impressed upon it, such as via the ... | 09/25/2007 |
| 7271462 | Solid-state image sensing device A solid-state image sensing device that is free of kTC noise, can eliminate black smear and dark current, has a larger numerical aperture, and can eliminate the problem of insufficient area of the light-receiving portion. Photodiode PD is formed as the light-receivi... | 09/18/2007 |
| 7265328 | Method and apparatus providing an optical guide for an imager pixel having a ring of air-filled spaced slots around a photosensor A device and method to provide an optical guide of a pixel to guide incoming light onto a photosensor of the pixel and to improve the optical crosstalk immunity of an image sensor. The optical guide consists of an optically reflecting barrier formed as a trench that... | 09/04/2007 |
| 7244632 | Complementary metal oxide semiconductor image sensor and method for fabricating the same A complementary metal oxide semiconductor image sensor and a method for fabricating the same are disclosed, wherein a width of a depletion area of a photodiode is varied by variably applying a back bias voltage to a semiconductor substrate without using any color fi... | 07/17/2007 |
| 7238562 | Method for fabricating CMOS image sensor A method for fabricating a CMOS image sensor is disclosed, to decrease a dark current, which includes the steps of forming a photodiode area in a semiconductor substrate; forming a plurality of gates including a first gate on the semiconductor substrate, wherein the... | 07/03/2007 |
| 7232712 | CMOS image sensor and method for fabricating the same A CMOS image sensor and a method for fabricating the same is disclosed, to decrease a darkcurrent generated in the boundary between a diffusion area of a photodiode and a device isolation layer, which includes a first conductive type semiconductor substrate having a... | 06/19/2007 |
| 7230288 | Solid-state image pickup device and fabrication method thereof A solid-state image pickup device includes: a plurality of light receiving portions arranged in a matrix, and a vertical transfer register which is four-phase driven by first, second, third and fourth transfer electrodes of a three-layer structure. The vertical tran... | 06/12/2007 |
| 7223955 | Solid-state imaging element and imaging device with dynamically adjustable sensitivities and method thereof A solid-state imaging element converts light intensity into an electric charge signal and stores the thus-converted electric charge signal through use of a plurality of photoelectric conversion elements arranged in a square lattice pattern on the surface of a semico... | 05/29/2007 |
| 7217967 | CMOS image sensor and method for manufacturing the same A CMOS image sensor and a manufacturing method thereof are disclosed. The gates of the transistors are formed in an active region of a unit pixel, and at the same time, a passivation layer is formed on an edge portion of the active region of a photodiode to have the... | 05/15/2007 |
| 7212241 | Solid-state imaging device and method for driving the same A solid-state imaging device comprises, on a semiconductor substrate, a plurality of sensor sections for storing a signal charge commensurate with a quantity of reception light, a charge transfer section for transferring and outputting the signal charge of the senso... | 05/01/2007 |
| 7205584 | Image sensor for reduced dark current A method and structure for reducing dark current in an image sensor includes preventing unwanted electrons from being collected in the photosensitive region of the image sensor. In one embodiment, dark current is reduced by providing a deep n-type region having an n... | 04/17/2007 |
| 7199409 | Device for subtracting or adding charge in a charge-coupled device The present invention provides an apparatus for adding or subtracting an amount charge to or from a charge packet in a CCD as the packet traverses the CCD. The apparatus uses a “wire transfer” device structure to perform the addition or subtraction of charge dur... | 04/03/2007 |
| 7196314 | Image sensor and pixel having an anti-reflective coating over the photodiode A pixel for use in CMOS or CCD image sensors is disclosed. The pixel includes a light sensitive element, such as a photodiode, formed in a semiconductor substrate. An anti-reflective coating is formed over the photodiode to reduce reflection of incident light. The r... | 03/27/2007 |
| 7196303 | CCD image sensor A CCD image sensor includes a first diode row comprised of photodiodes arranged in a row, a second diode row extending in parallel with the first diode row and comprised of photodiodes arranged in a row, photodiodes in the second diode row being staggered by a half ... | 03/27/2007 |
| 7187016 | Semiconductor device In a semiconductor device an electric field is controlled in direction or angle relative to a gate, or a channel to adjust a gain coefficient of a transistor. In some embodiments, there are provided a first gate forming a channel region in a rectangle or a parallelo... | 03/06/2007 |
| 7184083 | Solid state image pickup apparatus of low power consumption and its driving method A charge transfer device whose output end is electrically connected to a charge detector circuit is driven by negative pulse voltage trains to reduce power consumption of the charge detector circuit. ... | 02/27/2007 |
| 7183127 | Method of manufacturing a semiconductor device A semiconductor device array comprising highly densely arranged nano-size semiconductor devices is prepared by a simple method. The array comprises a porous body having cylinder-shaped pores formed by removing cylinder-shaped regions from a structure that includes a... | 02/27/2007 |
| 7180104 | Micromechanical structure, device including the structure, and methods of forming and using same A micromechanical structure and device and methods of forming and using the structure and device are disclosed. The structure includes an ion conductor and a plurality of electrodes. Mechanical properties of the structure are altered by applying a bias across the el... | 02/20/2007 |
| 7180110 | Organic photoelectric conversion element The organic photoelectric conversion element according to the invention has enhanced the light-absorbing property by incorporating two or more kinds of electron donating organic materials 4a and 4b in the photoelectric conversion region | 02/20/2007 |
| 7173297 | Solid-state imaging device The invention provides a solid-state imaging device including a pixel array having a plurality of pixels arranged in a matrix. The pixels can each include a photo diode that generates carriers depending on the intensity of incident light, an accumulation region that... | 02/06/2007 |
| 7170653 | Fixing structure for solid state image forming device, image data input unit and image data input apparatus including the same The present invention is made to provide a fixing structure for solid state image forming device made inexpensively and easily by simple caulking adhering method with keeping high positional accuracy, by which it is achieved that the solid state image forming device... | 01/30/2007 |
| 7164444 | Vertical color filter detector group with highlight detector A vertical color filter detector group with highlight detector for generating data for a picture element. In one embodiment, the detector group includes three photodiodes each having its own spectral sensitivity and saturation exposure level and a highlight diode ha... | 01/16/2007 |
