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| Number | Title | Issue Date |
| 8084789 | Phase change memory with ovonic threshold switch A phase change memory includes a memory element and a selection element. The memory element is embedded in a dielectric and includes a resistive element having at least one sublithographic dimension and a storage region in contact with the resistive element. The sel... | 12/27/2011 |
| 7687830 | Phase change memory with ovonic threshold switch A phase change memory includes a memory element and a selection element. The memory element is embedded in a dielectric and includes a resistive element having at least one sublithographic dimension and a storage region in contact with the resistive element. The sel... | 03/30/2010 |
| 7504675 | Phase change memories with improved programming characteristics A phase change memory may be made with improved speed and stable characteristics over extended cycling. The alloy may be selected by looking at alloys that become stuck in either the set or the reset state and finding a median or intermediate composition that achiev... | 03/17/2009 |
| 7390715 | Method of fabricating active layer thin film by metal chalcogenide precursor solution A method of fabricating an active layer thin film by a metal-chalcogenide precursor solution is provided, including the steps of: synthesizing a metal-chalcogenide precursor containing benzyl or benzyl derivative; dissolving the precursor in a solvent to produce a p... | 06/24/2008 |
| 7387949 | Semiconductor device manufacturing method, semiconductor device, laminated semiconductor device, circuit substrate, and electronic apparatus A semiconductor device includes a semiconductor element, a penetrating electrode which penetrates the semiconductor element, and a resin layer which selectively covers side walls and corners of the semiconductor element. ... | 06/17/2008 |
| 7348620 | Forming phase change memories Phase change memories may exhibit improved properties and lower cost in some cases by forming the phase change material layers in a planar configuration. A heater may be provided below the phase change material layers to appropriately heat the material to induce the... | 03/25/2008 |
| 7332768 | Non-volatile memory devices Non-volatile memory devices are disclosed. In a first example non-volatile memory device, programming and erasing of the memory device is performed through the same insulating barrier without the use of a complex symmetrical structure. In the example device, program... | 02/19/2008 |
| 7323391 | Substrate having silicon germanium material and stressed silicon nitride layer A method of fabricating a semiconductor device includes providing a region having doped silicon region on a substrate, and forming a silicon germanium material adjacent to the region on the substrate. A stressed silicon nitride layer is formed over at least a portio... | 01/29/2008 |
| 7244651 | Fabrication of an OTP-EPROM having reduced leakage current The leakage current of an OTP-EPROM cell formed using buried channel PMOS technology can be reduced. The reduction in leakage current of the OTP-EPROM can be achieved by blocking implantation of the Vtp implant into a channel region of an n-well that subs... | 07/17/2007 |
| 7214571 | Electromechanical electron transfer devices An electron transfer device is implemented in a structure which is readily capable of achieving charge transfer cycle frequencies in the range of several hundred MHz or more and which can be formed by conventional semiconductor integrated circuit manufacturing proce... | 05/08/2007 |
| 7199409 | Device for subtracting or adding charge in a charge-coupled device The present invention provides an apparatus for adding or subtracting an amount charge to or from a charge packet in a CCD as the packet traverses the CCD. The apparatus uses a “wire transfer” device structure to perform the addition or subtraction of charge dur... | 04/03/2007 |
| 7132319 | Transparent double-injection field-effect transistor A double-injection field-effect transistor has an anode, a cathode, a substantially transparent channel, a substantially transparent gate insulator, and at least one substantially transparent gate electrode. The transistor may also have a substantially transparent a... | 11/07/2006 |
| 7109516 | Strained-semiconductor-on-insulator finFET device structures The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication. ... | 09/19/2006 |
| 7009648 | Method for operating a CMOS image sensor The present invention concerns a method for operating a CMOS image sensor including a matrix of pixels arranged in a plurality of lines and columns. Each of the pixels include a photosensor element that accumulates charge carriers in proportion to the illumination. ... | 03/07/2006 |
| 6998656 | Transparent double-injection field-effect transistor A double-injection field-effect transistor has an anode, a cathode, a substantially transparent channel, a substantially transparent gate insulator, and at least one substantially transparent gate electrode. The transistor may also have a substantially transparent a... | 02/14/2006 |
| 6960795 | Pixel sensor cell for use in an imaging device A multi-layered gate for use in a CMOS or CCD imager formed with a second gate at least partially overlapping it. The multi-layered gate is a complete gate stack having an insulating layer, a conductive layer, an optional silicide layer, and a second insulating laye... | 11/01/2005 |
| 6900468 | Indium chalcogenide, gallium chalcogenide, and indium-gallium chalcogenide phase-change media for ultra-high-density data-storage devices Ultra-high-density data-storage media employing indium chalcogenide, gallium chalcogenide, and indium-gallium chalcogenide films to form bit-storage regions that act as photoconductive, photovoltaic, or photoluminescent semiconductor devices that produce electrical ... | 05/31/2005 |
| 6891232 | Semiconductor device having an injection substance to knock against oxygen and manufacturing method of the same A semiconductor device comprises: a semiconductor substrate; a gate insulating film formed on the top surface of the semiconductor substrate; a gate electrode formed on the gate insulating film; diffusion layers formed in the semiconductor substrate to be used a sou... | 05/10/2005 |
| 6800503 | MEMS encapsulated structure and method of making same A method of fabricating an encapsulated micro electro-mechanical system (MEMS) and making of same that includes forming a dielectric layer, patterning an upper surface of the dielectric layer to form a trench, forming a release material within the trench, patterning... | 10/05/2004 |
| 6639259 | Charge-coupled device The invention relates to a CCD of the buried-channel type comprising a charge-transport channel in the form of a zone (12) of the first conductivity type, for example the n-type, in a well (13) of the opposite conductivity type, in the example the p-type.... | 10/28/2003 |
| 6590239 | Color filter image array optoelectronic microelectronic fabrication with a planarizing layer formed upon a concave surfaced color filter region Within a method for forming a color filter image array optoelectronic microelectronic fabrication, and the color filter image array optoelectronic microelectronic fabrication formed employing the method, there is provided a substrate having formed therein... | 07/08/2003 |
| 6580642 | Method of erasing nonvolatile tunneling injector memory cell A method of erasing a non volatile memory cell having a floating gate disposed over and insulated from a semiconductor substrate by a gate insulation layer, a grid electrode disposed over and insulated from the floating gate, and an injector electrode dis... | 06/17/2003 |
| 6576938 | Image sensing array with sweep means for sweeping charges in non selected registers in the array An image input device or a solid-state image sensing device using a CCD linear sensor includes a main sensor array and a sub sensor array. A transfer register for the sub sensor array is provided with charge sweep means for sweeping away unnecessary charg... | 06/10/2003 |
| 6515318 | Charge transfer device A charge transfer device is provided which is capable of reducing a reset field-through noise in a stable manner without being affected by characteristics of transistors and without occurrence of a mustache-shaped pulse-like noise. The charge transfer dev... | 02/04/2003 |
| 6515317 | Sidewall charge-coupled device with multiple trenches in multiple wells Increased pixel density and increased sensitivity to blue light are provided in a charge couple device employing sidewall and surface gates.... | 02/04/2003 |
| 6437378 | Charge coupled devices including charge signal amplifiers therein A charge coupled device includes an integrated circuit substrate and a transfer circuit, in the integrated circuit substrate, that transfers charge signals in the charge coupled device to provide transferred charge signals. An amplifier, in the integrated... | 08/20/2002 |
| 6376868 | Multi-layered gate for a CMOS imager A multi-layered gate for use in a CMOS or CCD imager formed with a second gate at least partially overlapping it. The multi-layered gate is a complete gate stack having an insulating layer, a conductive layer, an optional silicide layer, and a second insu... | 04/23/2002 |
| 6333523 | Field-effect transistor The present invention relates to a field-effect transistor which is improved such that the linearity of mutual conductance gm is flattened over a wider range of gate bias. This field-effect transistor is a MESFET comprising a channel layer and ... | 12/25/2001 |
| 6303940 | Charge injection transistor using high-k dielectric barrier layer The present invention relates to a heterojunction structure based upon the oxide/high-k dielectric barrier. In exemplary embodiment, a silicon layer has a silicon dioxide layer thereon, and a high-k dielectric material disposed on the oxide layer. Thereaf... | 10/16/2001 |
| 6252275 | Silicon-on-insulator non-volatile random access memory device A non-volatile random access memory (NVRAM) structure comprising an injector element in a single crystal silicon substrate; an insulator layer over the substrate; a silicon-on-insulator (SOI) layer over the insulator layer; and a sensing element in the SO... | 06/26/2001 |
| 6239478 | Semiconductor structure for a MOS transistor The MOS transistor has field plates and a subarea of the gate formed from the same polysilicon layer. A gate oxide lying underneath them is produced at the beginning of the fabrication process and it therefore exhibits particularly high quality. The polys... | 05/29/2001 |
| 6236074 | Solid state image sensor device and method of fabricating the same A solid state image sensor device and a method of fabricating the same are disclosed in the present invention. A solid state image sensor device includes a semiconductor substrate, a well region in the semiconductor substrate, a horizontal charge transmis... | 05/22/2001 |
| 6218686 | Charge coupled devices A charge coupled device has a transfer electrode portion having a first gate electrode, a second gate electrode having an end portion partially overlapping an end portion of the first gate electrode, and a third gate electrode having one end portion parti... | 04/17/2001 |
| 6081022 | Clock distribution network with efficient shielding An interconnect structure includes in a first layer a clock line and a ground line running substantially parallel to the clock line, and a plurality of conductive regions lying in a second layer parallel to the first layer. The ground line is coupled to a... | 06/27/2000 |
| 5952685 | Signal processing applications of massively parallel charge domain computing devices The present invention is embodied in a charge coupled device (CCD)/charge injection device (CID) architecture capable of performing a Fourier transform by simultaneous matrix vector multiplication (MVM) operations in respective plural CCD/CID arrays in pa... | 09/14/1999 |
| 5828118 | System which uses porous silicon for down converting electromagnetic energy to an energy level within the bandpass of an electromagnetic energy detector An electromagnetic energy detector system down converts electromagnetic egy from a relatively high energy beyond the detectable range of an electromagnetic energy detector to a lower energy level within the detectable range of the electromagnetic energy ... | 10/27/1998 |
| 5715001 | Solid-state camera device and method of driving thereof A solid-state camera device of the present invention includes a semiconductor substrate, a plurality of charge storage regions formed on the semiconductor substrate, a charge transfer region formed on the semiconductor substrate, for transferring charges ... | 02/03/1998 |
| 5625208 | Method for using a charge injection transistor A charge or carrier injection transistor including a substrate, a gate electrode and an electric potential barrier layer forming an electric potential barrier against charges (either holes or electrons) injected by the gate electrode towards the substrate... | 04/29/1997 |
| 5591996 | Recirculating charge transfer magnetic field sensor A device for producing an output voltage which is proportional to an applied magnetic field. The device includes a plurality charge injection regions, a corresponding plurality of charge exit regions, and a charge transfer region. The charge transfer regi... | 01/07/1997 |
| 5508538 | Signal processing applications of massively parallel charge domain computing devices The present invention is embodied in a charge coupled device (CCD)/charge injection device (CID) architecture capable of performing a Fourier transform by simultaneous matrix vector multiplication (MVM) operations in respective plural CCD/CID arrays in pa... | 04/16/1996 |
