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Actor Marlon Brando has four patents, all named "Drumhead tensioning device and method."
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| Number | Title | Issue Date |
| 8183597 | GaN semiconductor device having a high withstand voltage A GaN semiconductor device which has a low on-resistance, has a very small leak current when a reverse bias voltage is applied and is very excellent in withstand voltage characteristic, said GaN semiconductor device having a structure being provided with a III-V nit... | 05/22/2012 |
| 8154052 | Light emitting device grown on wavelength converting substrate In some embodiments of the invention, a device includes a substrate and a semiconductor structure. The substrate includes a wavelength converting element comprising a wavelength converting material disposed in a transparent material, a seed layer comprising a materi... | 04/10/2012 |
| 8148753 | Compound semiconductor substrate having multiple buffer layers The present invention provides a compound semiconductor substrate, including: a single-crystal silicon substrate having a crystal face with (111) orientation; a first buffer layer which is formed on the single-crystal silicon substrate and is constituted of an Al | 04/03/2012 |
| 8115235 | Modulation-doped halo in quantum well field-effect transistors, apparatus made therewith, and methods of using same A quantum well (QW) layer is provided in a semiconductive device. The QW layer is provided with a beryllium-doped halo layer in a barrier structure below the QW layer. The semiconductive device includes InGaAs bottom and top barrier layers respectively below and abo... | 02/14/2012 |
| 7935987 | Epitaxial group III nitride layer on (001)-oriented group IV semiconductor Group III nitride layers have a wide range of uses in electronics and optoelectronics. Such layers are generally grown on substrates such as sapphire, SiC and recently Si(111). For the purpose inter alia of integration with Si-CMOS electronics, growth on Si(001) is ... | 05/03/2011 |
| 7842974 | Gallium nitride heterojunction schottky diode A gallium nitride based semiconductor diode includes a substrate, a GaN layer formed on the substrate, an AlGaN layer formed on the GaN layer where the GaN layer and the AlGaN layer forms a cathode region of the diode, a metal layer formed on the AlGaN layer forming... | 11/30/2010 |
| 7786511 | Semiconductor device with Schottky and ohmic electrodes in contact with a heterojunction To provide a semiconductor device that has a sufficiently low on-resistance and excellent low-capacitance and high-speed characteristics as compared with conventional GaN-based diodes. The semiconductor device includes: a substrate (101); a buffer layer (1... | 08/31/2010 |
| 7646040 | Boron phosphide-based compound semiconductor device, production method thereof and light emitting diode A boron phosphide-based semiconductor device having a junction structure of a Group-III nitride semiconductor layer and a boron phosphide layer with excellent device properties is provided. The boron phosphide-based compound semiconductor device has a heterojunction... | 01/12/2010 |
| 7442569 | Vertical GaN-based LED and method of manufacturing the same Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electr... | 10/28/2008 |
| 7420226 | Method for integrating silicon CMOS and AlGaN/GaN wideband amplifiers on engineered substrates High-speed silicon CMOS circuits and high-power AlGaN/GaN amplifiers are integrated on the same wafer. A thin layer of high resistivity silicon is bonded on a substrate. Following the bonding, an AlGaN/GaN structure is grown over the bonded silicon layer. A silicon ... | 09/02/2008 |
| 7394114 | Semiconductor device and manufacturing method therefor A laser diode includes a first n-cladding layer disposed on and lattice-matched to an n-semiconductor substrate, wherein the first n-cladding layer is n-AlGaInP or n-GaInP; a second n-cladding layer of n-AlGaAs supported by the first n-cladding layer; and an inserte... | 07/01/2008 |
| 7388234 | Semiconductor device and method of fabricating the same and method of forming nitride based semiconductor layer A GaN layer is grown on a sapphire substrate, an SiO2 film is formed on the GaN layer, and a GaN semiconductor layer including an MQW active layer is then grown on the GaN layer and the SiO2 film using epitaxial lateral overgrowth. The GaN base... | 06/17/2008 |
| 7368763 | Semiconductor device and manufacturing method thereof A high quality silicon carbide (SiC) layer being substantially lower in threading dislocation density than a prior layer is formed on silicon (Si) substrate. A semiconductor device is fabricated in such a way that a semiconductor buffer layer containing Si in part a... | 05/06/2008 |
| 7368766 | Semiconductor light emitting element and method for fabricating the same The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer. ... | 05/06/2008 |
| 7345327 | Bipolar transistor A semiconductor material which has a high carbon dopant concentration includes gallium, indium, arsenic and nitrogen. The disclosed semiconductor materials have a low sheet resistivity because of the high carbon dopant concentrations obtained. The material can be th... | 03/18/2008 |
| 7309832 | Multi-junction solar cell device A multi-junction solar cell device (10) is provided. The multi-junction solar cell device (10) comprises either two or three active solar cells connected in series in a monolithic structure. The multi-junction device (10) comprises a bottom acti... | 12/18/2007 |
| 7259399 | Vertical GaN-based LED and method of manufacturing the same Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electr... | 08/21/2007 |
| 7259409 | Thin film device and its fabrication method A thin film device includes a metal sulfide layer formed on a single crystal silicon substrate by epitaxial growth; and a compound thin film with ionic bonding, which is formed on the metal sulfide layer by epitaxial growth. Alternatively, a thin film device include... | 08/21/2007 |
| 7259406 | Semiconductor optical element A semiconductor optical element having a includes an n-type GaAs buffer layer, an n-type AlGaInP cladding layer, a first InGaAsP (including zero As content)guide layer without added dopant impurities, an InGaAsP (including zero In content) active layer, a second InG... | 08/21/2007 |
| 7256432 | Field-effect transistor An electric-field control electrode (5) is formed between a gate electrode (2) and a drain electrode (3). A multilayered film including a SiN film (21) and a SiO2 film (22) is formed below the electric-field control elec... | 08/14/2007 |
| 7247893 | Non-planar nitride-based heterostructure field effect transistor A method for fabricating a non-planar heterostructure field effect transistor using group III-nitride materials with consistent repeatable results is disclosed. The method provides a substrate on which at least one layer of semiconductor material is deposited. An Al... | 07/24/2007 |
| 7238972 | Photodetector A photodetector is described. The photodetector is comprised of a substrate, a first n-type III-V compound semiconductor layer located on the substrate, an n++-type III-V compound semiconductor layer located on a first portion of the first n-type III-V co... | 07/03/2007 |
| 7235821 | Optical device with quantum well An optical device with a quantum well is provided. The optical device includes an active layer made of a Group III-V semiconductor compound and having a quantum well of a bandgap grading structure in which conduction band energy and valence band energy change linear... | 06/26/2007 |
| 7230282 | III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer A III–V group nitride system semiconductor self-standing substrate has: a first III–V group nitride system semiconductor crystal layer that has a region with dislocation lines gathered densely, the dislocation lines being gathered substantially perpendicular to ... | 06/12/2007 |
| 7224041 | Design and fabrication of 6.1-Å family semiconductor devices using semi-insulating A1Sb substrate For the first time, an aluminum antimonide (AlSb) single crystal substrate is utilized to lattice-match to overlying semiconductor layers. The AlSb substrate establishes a new design and fabrication approach to construct high-speed, low-power electronic devices whil... | 05/29/2007 |
| 7221007 | Sheet for optical-semiconductor element encapsulation and process for producing optical semiconductor device using the sheet The invention provides a sheet for optical-semiconductor element encapsulation, which has a multilayer structure including at least two resin layers. The at least two resin layers include: (A) an outermost resin layer (layer A) that is to be brought into contact wit... | 05/22/2007 |
| 7208752 | Structure and manufacturing of gallium nitride light emitting diode A structure of a gallium nitride light emitting diode has a transparent conductive window layer including a diffusion barrier layer, an ohmic contact layer, and a window layer. By using the added domain contact layer, the diffusion barrier layer and the P-type semic... | 04/24/2007 |
| 7209399 | Circuit and method of driving bitlines of integrated circuit memory using improved precharge scheme and sense-amplification scheme Provided are a bitline driving circuit of an integrated circuit memory that enhances a precharge scheme and a sense amplification scheme and a bitline driving method. In the bitline driving circuit, a new scheme of precharging the bitlines to voltages greater than o... | 04/24/2007 |
| 7208338 | Method of manufacturing semiconductor light emitting device A method of manufacturing a ridge type semiconductor light emitting device includes: a process of epitaxially growing a multi-layered semiconductor layer having at least a first conductive type cladding layer, an active layer, a second conductive type first cladding... | 04/24/2007 |
| 7190037 | Integrated transistor devices A self-aligned enhancement mode metal-oxide-compound semiconductor field effect transistor (10) includes a lower oxide layer that is a mixture of Ga2O, Ga2O3, and other gallium oxide compounds (30), and a second insulat... | 03/13/2007 |
| 7187045 | Junction field effect metal oxide compound semiconductor integrated transistor devices A self-aligned enhancement mode metal-oxide-compound semiconductor field effect transistor includes a gate insulating structure comprised of a first conducting oxide layer comprised of indium oxide compounds positioned immediately on top of the compound semiconducto... | 03/06/2007 |
| 7179329 | Methods of hyperdoping semiconductor materials and hyperdoped semiconductor materials and devices Methods are disclosed for producing highly doped semiconductor materials. Using the invention, one can achieve doping densities that exceed traditional, established carrier saturation limits without deleterious side effects. Additionally, highly doped semiconductor ... | 02/20/2007 |
| 7180103 | III-V power field effect transistors A field effect transistor configured for use in high power applications and a method for its fabrication is disclosed. The field effect transistor is formed of III-V materials and is configured to have a breakdown voltage that is advantageous for high power applicat... | 02/20/2007 |
| 7170109 | Heterojunction semiconductor device with element isolation structure A technique enabling to improve element isolation characteristic of a semiconductor device is provided. An element isolation structure is provided in a semiconductor substrate in which a silicon layer, a compound semiconductor layer and a semiconductor layer are lam... | 01/30/2007 |
| 7170096 | Antimonide-based optical devices An optical device includes an antimonide-containing substrate, and an antimonide-containing n-doped layer provided on the substrate. The optical device further includes an antimonide-containing i-doped layer provided on the n-doped layer, an antimonide-containing p-... | 01/30/2007 |
| 7166874 | Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor A nitride semiconductor device has a nitride semiconductor layer structure. The structure includes an active layer of a quantum well structure containing an indium-containing nitride semiconductor. A first nitride semiconductor layer having a band gap energy larger ... | 01/23/2007 |
| 7161173 | P-type group II-VI semiconductor compounds A persistent p-type group II-VI semiconductor material is disclosed. The group II-VI semiconductor includes atoms of group II elements, atoms of group VI elements, and one or more p-type dopants. The p-type dopant concentration is sufficient to render the group II-V... | 01/09/2007 |
| 7154132 | Semiconductor device with dummy electrode A semiconductor device includes a gate electrode having a straight portion, a dummy electrode located at a point on the extension of the straight portion, a stopper insulating film, a sidewall insulating film, an interlayer insulating film, and a linear contact port... | 12/26/2006 |
| 7154131 | Nitride semiconductor substrate and method of producing same A nitride semiconductor substrate having a rugged surface being lapped by whetting granules to roughness between Rms5 nm and Rms200 nm, which has a function of reducing dislocations of a GaN, InGaN or AlGaN layer epitaxially grown on the lapped substrate by gatherin... | 12/26/2006 |
| 7151307 | Integrated semiconductor circuits on photo-active Germanium substrates A semiconductor device having at least one layer of a group III–V semiconductor material epitaxially deposited on a group III–V nucleation layer adjacent to a germanium substrate. By introducing electrical contacts on one or more layers of the semiconductor devi... | 12/19/2006 |
