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| Number | Title | Issue Date |
| 8174051 | III-nitride power device A III-nitride power device that includes a Schottky electrode surrounding one of the power electrodes of the device. ... | 05/08/2012 |
| 8093628 | Fluidic nanotubes and devices Fluidic nanotube devices are described in which a hydrophilic, non-carbon nanotube, has its ends fluidly coupled to reservoirs. Source and drain contacts are connected to opposing ends of the nanotube, or within each reservoir near the opening of the nanotube. The p... | 01/10/2012 |
| 8076700 | P-N junction for use as an RF mixer from GHZ to THZ frequencies This disclosure describes a semiconductor device that can be used as a mixer at RF frequencies extending from a few tens of GHz into the THz frequency range. The device is composed of narrow bandgap semiconductors grown by solid source molecular beam epitaxy. The de... | 12/13/2011 |
| 8063413 | Tensile strained GE for electronic and optoelectronic applications A semiconductor structure is provided. The semiconductor structure includes one or more III-IV material-based semiconductor layers. A tensile-strained Ge layer is formed on the one or more a III-IV material-based semiconductor layers. The tensile-strained Ge layer i... | 11/22/2011 |
| 8035131 | Method for forming a nitride semiconductor laminated structure and method for manufacturing a nitride semiconductor element A method for forming a nitride semiconductor laminated structure includes forming a first layer that is an n-type or i-type first layer composed of a group III nitride semiconductor using an H2 carrier gas; forming a second layer by laminating a p-type se... | 10/11/2011 |
| 7982242 | Warp-free semiconductor wafer, and devices using the same A semiconductor wafer to be diced into individual SBDs, HEMTs or MESFETs has a substrate with a main semiconductor region and counter semiconductor region formed on its opposite surfaces. The main semiconductor region is configured to provide the desired semiconduct... | 07/19/2011 |
| 7973339 | Diamond semiconductor element and process for producing the same An integrated optical waveguide has a first optical waveguide, a second optical waveguide, and a groove. The second optical waveguide is coupled to the first optical waveguide and has a refractive index that is different from the first optical waveguide. The groove ... | 07/05/2011 |
| 7943964 | AlGaInN crystal substrate, semiconductor device, and method of manufacturing the same An AlxGayIn1-x-yN crystal substrate of the present invention has a main plane having an area of at least 10 cm2. The main plane has an outer region located within 5 mm from an outer periphery of the main plane, and an inne... | 05/17/2011 |
| 7943965 | Multi-bit phase-change memory device A multi-bit phase-change memory device includes a semiconductor substrate with a plurality of phase-change patterns sequentially stacked above the semiconductor substrate. Each phase-change pattern crosses another phase change pattern, and each phase change pattern ... | 05/17/2011 |
| 7923755 | Semiconductor integrated circuit and method of designing semiconductor integrated circuit In the present invention, a decoupling capacitance circuit, a first output terminal and a second output terminal are provided. The decoupling capacitance circuit comprises a TDDB control circuit consisting of a first Tr and a second Tr, and a third Tr. Conductivity ... | 04/12/2011 |
| 7915646 | Nitride semiconductor material, semiconductor element, and manufacturing method thereof The nitride semiconductor material according to the present invention includes a group III nitride semiconductor and a group IV nitride formed on the group III nitride semiconductor, where an interface between the group III nitride semiconductor and the group IV nit... | 03/29/2011 |
| 7898005 | Inorganic nanotubes and electro-fluidic devices fabricated therefrom Nanofluidic devices incorporating inorganic nanotubes fluidly coupled to channels or nanopores for supplying a fluid containing chemical or bio-chemical species are described. In one aspect, two channels are fluidly interconnected with a nanotube. Electrodes on oppo... | 03/01/2011 |
| 7863650 | Multilayer structure and fabrication thereof A process for fabricating a multilayer structure is provided as well as the structure itself. In accordance with one embodiment, the process includes growing a growth layer on a silicon substrate by epitaxial growth, forming at least one pattern from the growth laye... | 01/04/2011 |
| 7755109 | Bonded semiconductor substrate Ge/Si and other nonsilicon film heterostructures are formed by hydrogen-induced exfoliation of the Ge film which is wafer bonded to a cheaper substrate, such as Si. A thin, single-crystal layer of Ge is transferred to Si substrate. The bond at the interface of the G... | 07/13/2010 |
| 7745854 | Substrate for growing compound semiconductor and epitaxial growth method It is to provide a substrate for growing a semiconductor, which is effective for suppressing an occurrence of surface defects different in type from hillock defects in case of epitaxially growing a compound semiconductor layer, particularly an Al-based compound semi... | 06/29/2010 |
| 7633097 | Growth of III-nitride light emitting devices on textured substrates A III-nitride light emitting device is grown on a textured substrate, in order to reduce the amount of total internal reflection at the interface between the substrate and the III-nitride layers. In some embodiments, the device includes a first growth region substan... | 12/15/2009 |
| 7598540 | High performance CMOS devices comprising gapped dual stressors with dielectric gap fillers, and methods of fabricating the same The present invention relates to complementary metal-oxide-semiconductor (CMOS) devices having gapped dual stressors with dielectric gap fillers. Specifically, each CMOS device of the present invention includes at least one n-channel field effect transistor (n-FET) ... | 10/06/2009 |
| 7566922 | Field effect transistor with suitable source, drain and channel materials and integrated circuit comprising same The normally on transistor comprises a source, a drain and a channel. The source, drain and channel materials are chosen such that, for a NMOS type transistor, the electronic affinity of the drain material is lower than the electronic affinity of the channel materia... | 07/28/2009 |
| 7564076 | Semiconductor device and manufacturing method therefor A laser diode includes a first n-cladding layer disposed on and lattice-matched to an n-semiconductor substrate, wherein the first n-cladding layer is n-AlGaInP or n-GaInP; a second n-cladding layer of n-AlGaAs supported by the first n-cladding layer; and an inserte... | 07/21/2009 |
| 7462893 | Method of fabricating GaN A method of fabricating a thick gallium nitride (GaN) layer includes forming a porous GaN layer having a thickness of 10-1000 nm by etching a GaN substrate in a reaction chamber in an HCI and NH3 gas atmosphere and forming an in-situ GaN growth layer in t... | 12/09/2008 |
| 7456445 | Group III nitride semiconductor light emitting device A Group III nitride semiconductor light emitting device having a light emitting layer (6) bonded to a crystal layer composed of an n-type or p-type Group III nitride semiconductor, the Group III nitride semiconductor light emitting device being characterized ... | 11/25/2008 |
| 7442569 | Vertical GaN-based LED and method of manufacturing the same Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electr... | 10/28/2008 |
| 7442968 | Chip on film (COF) package having test pad for testing electrical function of chip and method for manufacturing same A chip on film (COF) package comprising a test pad for testing the electrical function of a semiconductor chip and a method for manufacturing same are provided. The COF package comprises a semiconductor chip mounted on a base film, a signal-input portion for receivi... | 10/28/2008 |
| 7436035 | Method of fabricating a field effect transistor structure with abrupt source/drain junctions Microelectronic structures embodying the present invention include a field effect transistor (FET) having highly conductive source/drain extensions. Formation of such highly conductive source/drain extensions includes forming a passivated recess which is back filled... | 10/14/2008 |
| 7436004 | Semiconductor device An aspect of the present invention provides a semiconductor device that includes, a first semiconductor body of a first conductivity type, a first switching mechanism provided on the first semiconductor body, configured and arranged to switch on/off current flowing ... | 10/14/2008 |
| 7420203 | Organic semiconductor element By introducing new concepts into a structure of a conventional organic semiconductor element and without using a conventional ultra thin film, an organic semiconductor element is provided which is more reliable and has higher yield. Further, efficiency is improved p... | 09/02/2008 |
| 7420261 | Bulk nitride mono-crystal including substrate for epitaxy The invention relates to a substrate for epitaxy, especially for preparation of nitride semiconductor layers. Invention covers a bulk nitride mono-crystal characterized in that it is a mono-crystal of gallium nitride and its cross-section in a plane perpendicular to... | 09/02/2008 |
| 7417248 | Transistor with shallow germanium implantation region in channel A method of manufacturing a transistor and a structure thereof, wherein a very shallow region having a high dopant concentration of germanium is implanted into a channel region of a transistor at a low energy level, forming an amorphous germanium implantation region... | 08/26/2008 |
| 7407859 | Compound semiconductor device and its manufacture A compound semiconductor device has: a substrate; a GaN channel layer; an n-type AlqGal-qN (0 | 08/05/2008 |
| 7405420 | Method and system for chalcogenide-based nanowire memory Chalcogenide-based nanowire memories are implemented using a variety of methods and devices. According to an example embodiment of the present invention, a method of manufacturing a memory circuit is implemented. The method includes depositing nanoparticles at locat... | 07/29/2008 |
| 7403256 | Flat panel display and drive chip thereof A flat panel display mainly includes a display panel and a plurality of drive IC chips mounted on the display panel by a chip-on-glass method. The display panel includes a plurality of electrode terminals, a plurality of external terminals and a plurality of first c... | 07/22/2008 |
| 7402845 | Cascoded rectifier package A semiconductor package that includes a compound component and a diode arranged in a cascode configuration to function as a rectifier. ... | 07/22/2008 |
| 7394114 | Semiconductor device and manufacturing method therefor A laser diode includes a first n-cladding layer disposed on and lattice-matched to an n-semiconductor substrate, wherein the first n-cladding layer is n-AlGaInP or n-GaInP; a second n-cladding layer of n-AlGaAs supported by the first n-cladding layer; and an inserte... | 07/01/2008 |
| 7378690 | Method for forming patterns on a semiconductor device using a lift off technique Provided is a technique of improving the properties of a bipolar transistor. Described specifically, upon formation of a collector electrode around a base mesa by the lift-off method, a resist film is formed over connection portions between the outer periphery of a ... | 05/27/2008 |
| 7372610 | Electrochromic devices and methods A heat treated electrochromic device comprising an anodic complementary counter electrode layer comprised of a mixed tungsten-nickel oxide and lithium, which provides a high transmission in the fully intercalated state and which is capable of long term stability, is... | 05/13/2008 |
| 7372762 | Semiconductor memory device The present invention is related to a semiconductor memory device improving refresh performance by reliably generating an internal voltage. The internal voltage generator for use in the semiconductor memory device includes a cell plate voltage generator, a driving v... | 05/13/2008 |
| 7368298 | Method of manufacturing ferroelectric semiconductor device An Ir film, an IrOx film, a Pt film, a PtO film and a Pt film are formed, and thereafter a PLZT film is formed. Then, heat treatment at 600° C. or lower is performed by the RTA method in an atmosphere containing Ar and O2 to thereby crystalliz... | 05/06/2008 |
| 7368330 | Semiconductor device having fuse circuit on cell region and method of fabricating the same A semiconductor device, capable of improving integration density and solving problems that may occur in a laser repair process, and a method of fabricating the same are provided. A fuse circuit is formed in a cell region, not in a peripheral region, and thus it is p... | 05/06/2008 |
| 7368866 | Envelope, envelope manufacturing method, image display device, and television display device Provided is an envelope which includes: a first substrate; a second substrate opposed to the first substrate; a frame interposed between the first substrate and the second substrate; and a low melting point metal for bonding the first substrate and the frame to each... | 05/06/2008 |
| 7370134 | System and method for memory hub-based expansion bus A system memory includes a memory hub controller, a memory module accessible by the memory hub controller, and an expansion module having a processor circuit coupled to the memory module and also having access to the memory module. The memory hub controller is coupl... | 05/06/2008 |
