Bizarre Patents
An enclosure for small animals which is wearable on the front or back of an animate being.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8183551 | Multi-terminal phase change devices Phase change devices, and particularly multi-terminal phase change devices, include first and second active terminals bridged together by a phase-change material whose conductivity can be modified in accordance with a control signal applied to a control electrode. T... | 05/22/2012 |
| 8183552 | Semiconductor memory device A semiconductor memory device having a first wiring layer which is provided on a first insulator, and which extends in a first direction, and a non-volatile memory cell which is provided in a pillar shape on the first wiring layer, and which includes a non-ohmic ele... | 05/22/2012 |
| 8173988 | Reduced power consumption phase change memory and methods for forming the same Memory cells for reduced power consumption and methods for forming the same are provided. A memory cell has a layer of phase change material. A first portion of the phase change material layer includes the programmable volume of the memory cell and its crystalline s... | 05/08/2012 |
| 8173987 | Integrated circuit 3D phase change memory array and manufacturing method A 3D phase change memory device is based on an array of electrode pillars and a plurality of electrode planes that intersect the electrode pillars at interface regions that include memory elements that comprise a programmable phase change memory element and a thresh... | 05/08/2012 |
| 8164079 | Phase change memory A method of fabricating a phase change memory includes forming a lower electrode on a semiconductor substrate, forming a phase change pattern, an upper electrode, and a hard mask pattern sequentially on the lower electrode, a width of a bottom surface of the hard ma... | 04/24/2012 |
| 8158963 | Programmable resistive RAM and manufacturing method Programmable resistive RAM cells have a resistance that depends on the size of the contacts. Manufacturing methods and integrated circuits for lowered contact resistance are disclosed that have contacts of reduced size. ... | 04/17/2012 |
| 8158964 | Schottky diode switch and memory units containing the same A switching element that includes a first semiconductor layer, the first semiconductor layer having a first portion and a second portion; a second semiconductor layer, the second semiconductor layer having a first portion and a second portion; an insulating layer di... | 04/17/2012 |
| 8148707 | Ovonic threshold switch film composition for TSLAGS material A chalcogenide alloy that optimizes operating parameters of an ovonic threshold switch includes an atomic percentage of arsenic in the range of 9 to 39, an atomic percentage of germanium in the range of 10 and 40, an atomic percentage of silicon in the range of 5 an... | 04/03/2012 |
| 8134138 | Programmable metallization memory cell with planarized silver electrode Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte mater... | 03/13/2012 |
| 8129705 | Nonvolatile memory device and method of manufacturing the same Provided is a nonvolatile memory device including a phase-change memory configured with cross-point memory cells in which memory elements formed of a phase-change material and selection elements formed with a diode are combined. A memory cell is configured with a me... | 03/06/2012 |
| 8129704 | Non-volatile resistive-switching memories Non-volatile resistive-switching memories are described, including a memory element having a first electrode, a second electrode, a metal oxide between the first electrode and the second electrode. The metal oxide switches using bulk-mediated switching, has a bandga... | 03/06/2012 |
| 8124950 | Concentric phase change memory element A memory device including a first electrode; a second electrode; and a memory cell positioned between the first electrode and the second electrode, the memory cell including a core of a first phase change material and a cladding of a second phase change material, wh... | 02/28/2012 |
| 8124951 | Phase change memory device with alternating adjacent conduction contacts and fabrication method thereof A phase change memory device and an associated method of making same are presented. The phase change memory device, includes first wiring lines, second wiring lines, memory cells, and conduction contacts. The first wiring lines are arranged substantially in parallel... | 02/28/2012 |
| 8124952 | Programmable resistive memory cell with filament placement structure Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion con... | 02/28/2012 |
| 8115186 | Phase change memory cell with reduced switchable volume A memory cell is fabricated by forming a dielectric layer and patterning a hole in the dielectric layer. Patterning the hole is accomplished at least in part by contacting the dielectric layer with a catalytic material in the presence of a reactant under conditions ... | 02/14/2012 |
| 8101936 | SnSe-based limited reprogrammable cell Methods and apparatus for providing a memory device that can be programmed a limited number of times. According to exemplary embodiments, a memory device and its method of formation provide a first electrode, a second electrode and a layer of a chalcogenide or germa... | 01/24/2012 |
| 8101937 | Multistate nonvolatile memory elements Multistate nonvolatile memory elements are provided. The multistate nonvolatile memory elements contain multiple layers. Each layer may be based on a different bistable material. The bistable materials may be resistive switching materials such as resistive switching... | 01/24/2012 |
| 8097871 | Low operational current phase change memory structures Memory cells described herein have an increased current density at lateral edges of the active region compared to that of conventional mushroom-type memory cells, resulting in improved operational current efficiency. As a result, the amount of heat generated within ... | 01/17/2012 |
| 8097870 | Memory cell with alignment structure A memory cell that includes a memory element configured for switching from a first data state to a second data state by passage of current therethrough. The memory cell includes a top electrode and a bottom electrode for providing the current through the memory cell... | 01/17/2012 |
| 8089059 | Programmable resistance memory element A programmable resistance memory element. The active volume of memory material is made small by the presence of a small area of contact between the conductive material and the memory material. The area of contact is created by forming a region of conductive material... | 01/03/2012 |
| 8084760 | Ring-shaped electrode and manufacturing method for same An electrode structure and a method for manufacturing an integrated circuit electrode includes forming a bottom electrode comprising a pipe-shaped member, filled with a conductive material such as n-doped silicon, and having a ring-shaped top surface. A disc-shaped ... | 12/27/2011 |
| 8084759 | Integrated circuit including doped semiconductor line having conductive cladding An integrated circuit includes an array of memory cells and a doped semiconductor line formed in a semiconductor substrate. The doped semiconductor line is coupled to a row of memory cells. The integrated circuit includes conductive cladding contacting the doped sem... | 12/27/2011 |
| 8076663 | Phase change memory structures Methods, devices, and systems associated with phase change memory structures are described herein. One or more embodiments of the present disclosure can reduce thermal crosstalk associated with phase change memory cells, which can provide various benefits including ... | 12/13/2011 |
| 8076662 | Electric field induced phase transitions and dynamic tuning of the properties of oxide structures Phase transitions (such as metal-insulator transitions) are induced in oxide structures (such as vanadium oxide thin films) by applying an electric field. The electric field-induced phase transitions are achieved in VO2 structures that scale down to nanom... | 12/13/2011 |
| 8071968 | Phase change memory device and method for manufacturing the same A phase change memory device and a method of manufacturing the same are presented. The phase change memory device includes a silicon substrate, a first insulation layer, cell switching elements, heaters, a gate, a second insulation layer, a barrier layer, a phase ch... | 12/06/2011 |
| 8071969 | Semiconductor memory device and method for manufacturing same A semiconductor memory device includes a word line interconnect layer having a plurality of word lines extending in a word line direction and a bit line interconnect layer having a plurality of bit lines extending in a bit line direction alternately stacked on a sil... | 12/06/2011 |
| 8058636 | Variable resistance nonvolatile memory apparatus A nonvolatile memory apparatus includes a first electrode (111), a second electrode (112), a variable resistance layer (113) which is disposed between the electrodes, a resistance value of the variable resistance layer reversibly varying between... | 11/15/2011 |
| 8058637 | Phase change memory device and method for manufacturing the same A phase change memory device includes a semiconductor substrate having a first conductivity type well An isolation structure is formed in the semiconductor substrate having the first conductivity type well to define active regions. Second conductivity type high conc... | 11/15/2011 |
| 8053749 | Mirrored-gate cell for non-volatile memory A memory comprising at least one memory cell operationally connected to a bit line, a source line and a word line. The memory cell comprises a substrate having a first source contact, a second source contact, and a bit contact between the first source contact and th... | 11/08/2011 |
| 8053751 | Phase-change semiconductor device and methods of manufacturing the same In a phase-change semiconductor device and methods of manufacturing the same, an example method may include forming a metal layer pattern on a substrate, the metal layer pattern including an opening that exposes a portion of the substrate, forming an etch stop layer... | 11/08/2011 |
| 8053750 | Phase change memory device having heat sinks formed under heaters and method for manufacturing the same A phase change memory device includes a silicon substrate having a cell region and a peripheral region. A first insulation layer is formed in the cell region and includes a plurality of holes. Cell switching elements are formed in the holes of the first insulation l... | 11/08/2011 |
| 8053748 | Integrated circuits with phase change devices Embodiments include methods, apparatus, and systems with integrated circuits having phase change devices. One embodiment includes an integrated circuit die and a phase change die having a phase change material that changes phases when a temperature at the integrated... | 11/08/2011 |
| 8049196 | Phase-change memory device A phase-change memory device includes a lower electrode; and at least two phase-change memory cells sharing the lower electrode. Another phase-change memory device includes a heating layer having a smaller contact area with a phase-change material layer and a greate... | 11/01/2011 |
| 8039828 | Semiconductor device and method of fabricating the same A semiconductor device such as a phase change memory device includes a semiconductor substrate including an active region, a conductive pattern disposed to expose the active region, an interlayer dielectric pattern provided on the conductive pattern and including an... | 10/18/2011 |
| 8030635 | Polysilicon plug bipolar transistor for phase change memory Memory devices and methods for manufacturing are described herein. A memory device described herein includes a plurality of memory cells. Memory cells in the plurality of memory cells comprise respective bipolar junction transistors and memory elements. The bipolar ... | 10/04/2011 |
| 8030634 | Memory array with diode driver and method for fabricating the same A memory array with self-centered diode access devices results from a process in which diodes are formed in the fill material, each diode having a lightly-doped first layer of the same conductivity type as the conductive lines; a heavily doped second layer of opposi... | 10/04/2011 |
| 8030636 | Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication A resistance variable memory cell and method of forming the same. The memory cell includes a first electrode and at least one layer of resistance variable material in contact with the first electrode. A first, second electrode is in contact with a first portion of t... | 10/04/2011 |
| 8022381 | Phase change memory device A memory device has a semiconductor substrate; a plurality of cell arrays stacked above the substrate, each cell array having memory cells, bit lines each commonly connecting one ends of plural cells arranged along a first direction and word lines each commonly conn... | 09/20/2011 |
| 8017929 | Phase change material layers and phase change memory devices including the same A phase change material layer includes antimony (Sb) and at least one of indium (In) and gallium (Ga). A phase change memory device includes a storage node including a phase change material layer and a switching device connected to the storage node. The phase change... | 09/13/2011 |
| 8013317 | Nonvolatile storage device and method for manufacturing same A nonvolatile storage device having a plurality of unit memory layers, and a plurality of layer selection transistors is provided. The plurality of unit memory layers are laminated in a direction perpendicular to a layer surface of the unit memory layers. Each of th... | 09/06/2011 |
