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| Number | Title | Issue Date |
| 8101973 | Transistor A heterojunction bipolar transistor comprising a substrate; a collector on the substrate; a base layer on the collector; an emitter layer on the base layer; the em... | 01/24/2012 |
| 8084786 | Silicided base structure for high frequency transistors High frequency performance of (e.g., silicon) bipolar devices is improved by reducing the extrinsic base resistance Rbx. Emitter, base and collector regions are formed in or on a semiconductor substrate. The emitter contact has a portion that overhangs a portion of ... | 12/27/2011 |
| 8013360 | Semiconductor device having a junction of P type pillar region and N type pillar region A semiconductor device includes: a semiconductor layer of a first conductivity type; a first semiconductor pillar region of the first conductivity type provided on a major surface of the semiconductor layer; a second semiconductor pillar region of a second conductiv... | 09/06/2011 |
| 8004013 | Polycrystalline thin film bipolar transistors A semiconductor device comprising a bipolar transistor having a base region, an emitter region and a collector region, wherein the base region comprises polycrystalline semiconductor material formed by crystallizing silicon, germanium or silicon germanium in contact... | 08/23/2011 |
| 7989845 | Semiconductor device having a hetero-junction bipolar transistor and manufacturing method thereof The object of the present invention is to provide a semiconductor device and the manufacturing method thereof which are capable of preventing decrease in the collector breakdown voltage and reducing the collector resistance. The semiconductor device according to the... | 08/02/2011 |
| 7989844 | Semiconductor device and method of manufacturing such a device The invention relates to a semiconductor device with a substrate (11) and a semiconductor body (12) with a heterojunction bipolar, in particular npn, transistor with an emitter region (1), a base region (2) and a collector region (3 | 08/02/2011 |
| 7968914 | Multi-component electrical module A mechanical construction of an electrical module includes two or more electrical components (102-105). Each of the electrical components has a contact surface (106-109) that is capable of forming a galvanic contact with an external elect... | 06/28/2011 |
| 7960758 | Bipolar transistor and radio frequency amplifier circuit A bipolar transistor and a radio frequency amplifier circuit capable of preventing thermal runaway in the bipolar transistor without affecting the radio frequency amplifier circuit, which includes: a direct-current (DC) bias terminal to which a DC bias is supplied; ... | 06/14/2011 |
| 7939854 | Semiconductor device with a bipolar transistor and method of manufacturing such a device The invention relates to a semiconductor device with a substrate and a semiconductor body of silicon comprising a bipolar transistor with an emitter region, a base region and a collector region which are respectively of the N-type conductivity, the P-type conductivi... | 05/10/2011 |
| 7923754 | Bipolar transistor A bipolar transistor (1) comprising a subcollector layer (3), a collector layer (4, 5), a base layer (6) and an emitter layer (7) which are successively built up and having: the subcollector layer (3) formed with a projectio... | 04/12/2011 |
| 7893463 | Integrated devices on a common compound semiconductor III-V wafer An integrated pair of HBT and FET transistors shares a common compound semiconductor III-V epitaxial layer. The integrated pair of transistors includes a semi-insulating substrate of a compound semiconductor III-V material, a first epitaxial structure disposed on to... | 02/22/2011 |
| 7880200 | Semiconductor device including a free wheeling diode A semiconductor device and production method is disclosed. In one embodiment, the semiconductor device includes a first electrode and a second electrode, located on surfaces of a semiconductor body, and an insulated gate electrode. The semiconductor body has a conta... | 02/01/2011 |
| 7875908 | Selective links in silicon hetero-junction bipolar transistors using carbon doping and method of forming same Bipolar transistors and methods of forming the bipolar transistors. The method including forming a P-type collector in a silicon substrate; forming an intrinsic base on the collector, the intrinsic base including a first N-type dopant species, germanium and carbon; ... | 01/25/2011 |
| 7842973 | Semiconductor device and manufacturing method of the same A semiconductor device capable of avoiding generation of a barrier in a conduction band while maintaining high withstanding voltage and enabling high speed transistor operation at high current in a double hetero bipolar transistor, as well as a manufacturing method ... | 11/30/2010 |
| 7786510 | Transistor structure and manufacturing method thereof An HBT structure and manufacturing method thereof, in which the HBT structure includes an emitter, an intrinsic base, a collector, an insulating sidewall, and a stress-inducing base formed by selective epitaxial growth to locally induce a stress to the HBT structure... | 08/31/2010 |
| 7777255 | Bipolar transistor with raised base connection region and process for the production thereof A bipolar transistor has a base with an epitaxial base layer and a raised base connection region which in a lateral direction in parallel relationship with the substrate surface encloses the emitter which is surrounded by a spacer of insulating material. The epitaxi... | 08/17/2010 |
| 7759703 | Photo-detector array device with ROIC monolithically integrated for laser-radar image signal and manufacturing method thereof A photo-detector array device integrated with a read-out integrated circuit (ROIC) monolithically integrated for a laser-radar image signal and a manufacturing method thereof are provided. According to the photo-detector array device, a photodiode and control device... | 07/20/2010 |
| 7759702 | Hetero-junction bipolar transistor (HBT) and structure thereof A method of fabricating a hetero-junction bipolar transistor (HBT) is disclosed, where the HBT has a structure incorporating a hetero-junction bipolar structure disposed on a substrate including of silicon crystalline orientation . The hetero-junction bipolar s... | 07/20/2010 |
| 7755107 | Bipolar/dual FET structure including enhancement and depletion mode FETs with isolated channels According to an exemplary embodiment, a bipolar/dual FET structure includes a bipolar transistor situated over a substrate. The bipolar/dual FET structure further includes an enhancement-mode FET and a depletion-mode FET situated over the substrate. In the bipolar/d... | 07/13/2010 |
| 7755106 | Integrated semiconductor structure including a heterojunction bipolar transistor and a Schottky diode An integrated semiconductor structure includes a heterojunction bipolar transistor and a Schottky diode. The structure has a substrate, the heterojunction bipolar transistor overlying and contacting the substrate, wherein the heterojunction bipolar transistor includ... | 07/13/2010 |
| 7750371 | Silicon germanium heterojunction bipolar transistor structure and method Disclosed is an improved semiconductor structure (e.g., a silicon germanium (SiGe) hetero-junction bipolar transistor) having a narrow essentially interstitial-free SIC pedestal with minimal overlap of the extrinsic base. Also, disclosed is a method of forming the t... | 07/06/2010 |
| 7737469 | Semiconductor device having superjunction structure formed of p-type and n-type pillar regions A semiconductor device includes: a semiconductor layer of a first conductivity type; a first semiconductor pillar region of the first conductivity type provided on a major surface of the semiconductor layer; a second semiconductor pillar region of a second conductiv... | 06/15/2010 |
| 7728357 | Heterojunction bipolar transistor and manufacturing method thereof The object of the present invention is to provide a heterojunction bipolar transistor with high breakdown tolerance which can be manufactured at a high reproducibility and a high yield, the heterojunction bipolar transistor includes: a sub-collector layer; a collect... | 06/01/2010 |
| 7728358 | Semiconductor device and method for manufacturing same The semiconductor device, which provides reduced electric current leakage and parasitic resistance to achieve stable current gain, is provided. A first polycrystalline semiconductor layer is grown on a p-type polycrystalline silicon film exposed in a lower surface o... | 06/01/2010 |
| 7723753 | Semiconductor device and manufacturing method of the same In a GaAs substrate as a semi-insulating substrate, a heterojunction bipolar transistor (HBT) is formed in an element formation region, while an isolation region is formed in an insulating region. The isolation region formed in the insulating region is formed by int... | 05/25/2010 |
| 7719031 | Heterojunction biploar transistor and method for manufacturing same A bipolar transistor 120 comprises a substrate 1, a intrinsic base region 11 and an extrinsic base region 12. The intrinsic base region 11 comprises a silicon buffer layer 109 comprised of silicon which is formed on the subs... | 05/18/2010 |
| 7714361 | Bipolar junction transistor having a high germanium concentration in a silicon-germanium layer and a method for forming the bipolar junction transistor A method for forming a germanium-enriched region in a heterojunction bipolar transistor and a heterojunction bipolar transistor comprising a germanium-enriched region. A base having a silicon-germanium portion is formed over a collector. Thermal oxidation of the bas... | 05/11/2010 |
| 7696536 | Semiconductor method and device A method for enhancing operation of a bipolar light-emitting transistor includes the following steps: providing a bipolar light-emitting transistor having emitter, base, and collector regions; providing electrodes for coupling electrical signals with the emitter, ba... | 04/13/2010 |
| 7692214 | Semiconductor device having IGBT cell and diode cell and method for designing the same A semiconductor device includes: a semiconductor substrate; an IGBT cell; and a diode cell. The substrate includes a first layer on a first surface, second and third layers adjacently arranged on a second surface of the substrate and a fourth layer between the first... | 04/06/2010 |
| 7679105 | Hetero junction bipolar transistor and method of manufacturing the same Provided are a hetero-junction bipolar transistor (HBT) that can increase data processing speed and a method of manufacturing the hetero-junction bipolar transistor. The HBT includes a semi-insulating compound substrate, a sub-collector layer formed on the semi-insu... | 03/16/2010 |
| 7635878 | Semiconductor device having insulated gate bipolar transistor One of the aspects of the present invention is to provide a semiconductor device, which includes a semiconductor layer of a first conductive type having first and second surfaces. The semiconductor layer includes a base region of a second conductive type formed in t... | 12/22/2009 |
| 7635879 | InAlAsSb/InGaSb and InAlPSb/InGaSb heterojunction bipolar transistors This invention pertains to heterojunction bipolar transistors containing a semiconductor substrate, a buffer layer of an antimony-based material deposited on the substrate, a sub-collector layer of an antimony-based material deposited on the buffer layer, a collecto... | 12/22/2009 |
| 7629628 | Bipolar transistor including a base layer containing carbon atoms and having three distinct layers being doped with a trivalent substance A transistor includes an emitter, a collector, and a base layer having a base contact. The base layer includes an intrinsic region between the emitter and the collector, an extrinsic region between the intrinsic region and the base contact, and a first doping layer ... | 12/08/2009 |
| 7598539 | Heterojunction bipolar transistor and method for making same A heterojunction bipolar transistor: The transistor may a collector layer, a base layer and an emitter layer. The transistor may include a dielectric material being disposed over the base layer. The base layer may be a SiGe base layer. ... | 10/06/2009 |
| 7592648 | Integrated circuit arrangement with NPN and PNP bipolar transistors and corresponding production method An integrated circuit arrangement and fabrication method is provided. The integrated circuit arrangement contains an NPN transistor and a PNP transistor. The PNP transistor contains an emitter connection region and a cutout. The cutout delimits the width of the emit... | 09/22/2009 |
| 7579635 | Heterojunction bipolar transistor A base layer made of SiGe mixed crystal includes a spacer layer formed in contact with a collector layer with no base impurities diffused therein and an intrinsic base layer formed in contact with an emitter layer with base impurities diffused therein. The spacer la... | 08/25/2009 |
| 7566920 | Bipolar transistor and power amplifier A base mesa finger (an emitter ledge layer 15, a base layer 16, and a collector layer 17) is interposed between two collector fingers (collector electrodes 13), and on the base mesa finger, a base finger (a base electrode 12) and t... | 07/28/2009 |
| 7566919 | Method to reduce seedlayer topography in BICMOS process A method for forming an epitaxial base layer in a bipolar device. The method comprises the steps of: providing a structure having a field isolation oxide region (12) adjacent to an active silicon region (10); forming a silicon nitride/silicon stack ( | 07/28/2009 |
| 7566921 | Silicon germanium emitter Disclosed are an improved hetero-junction bipolar transistor (HBT) structure and a method of forming the structure that incorporates a silicon-germanium emitter layer with a graded germanium profile. The graded germanium concentration creates a quasi-drift field in ... | 07/28/2009 |
| 7564075 | Semiconductor device A semiconductor device provided with an emitter layer having a narrowed base contact portion. The semiconductor device includes a collector layer arranged on a semiconductor substrate. A conductive layer is arranged on the collector layer. A silicon film is arranged... | 07/21/2009 |
