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| Number | Title | Issue Date |
| 7999289 | Monolithic integrated circuit of a field-effect semiconductor device and a diode A field-effect semiconductor device such as a HEMT or MESFET is monolithically integrated with a Schottky diode for feedback, regeneration, or protection purposes. The field-effect semiconductor device includes a main semiconductor region having formed thereon a sou... | 08/16/2011 |
| 7977708 | HBT/FET process integration A co-integrated HBT/FET apparatus and system, and methods for making the same, are disclosed. A co-integrated HBT/FET apparatus may include a first epitaxial structure formed over a substrate, the first epitaxial structure forming, at least in part, a FET device, a ... | 07/12/2011 |
| 7915645 | Monolithic vertically integrated composite group III-V and group IV semiconductor device and method for fabricating same According to one disclosed embodiment, a monolithic vertically integrated composite device comprises a double sided semiconductor substrate having first and second sides, a group IV semiconductor layer formed over the first side and comprising at least one group IV ... | 03/29/2011 |
| 7838907 | Semiconductor device and power conversion device using the same In a semiconductor device in which a diode and a high electron mobility transistor are incorporated in the same semiconductor chip, a compound semiconductor layer of the high electron mobility transistor is formed on a main surface (first main surface) of a semicond... | 11/23/2010 |
| 7825435 | Diode-like composite semiconductor device A silicon-made low-forward-voltage Schottky barrier diode is serially combined with a high-antivoltage-strength high-electron-mobility transistor made from a nitride semiconductor that is wider in bandgap than silicon. The Schottky barrier diode has its anode connec... | 11/02/2010 |
| 7821036 | Semiconductor device and method for manufacturing the same A semiconductor device (10) comprises a substrate (11), a semiconductor layer (12), an insulation film (13), a protective film (15), a source electrode (21), a drain electrode (22), a gate electrode (23). The s... | 10/26/2010 |
| 7755105 | Capacitor-less memory It is an object of the present invention to provide a capacitor-less memory which can prevent a change of a threshold voltage due to flowing out of carriers and improve the memory retention property without a complicated structure. In the capacitor-less memory which... | 07/13/2010 |
| 7732837 | Nitride semiconductor device In a nitride semiconductor device according to one embodiment of the invention, a p-type gallium nitride (GaN) layer electrically connected to a source electrode and extending and projecting to a drain electrode side with respect to a gate electrode is formed on an ... | 06/08/2010 |
| 7626218 | Monolithic integrated circuit having enhancement mode/depletion mode field effect transistors and RF/RF/microwave/milli-meter wave milli-meter wave field effect transistors A semiconductor structure having: a III-V substrate structure; an enhancement mode transistor device disposed in a first region of the structure; a depletion mode transistor device disposed in a laterally displaced second region of the structure; and a RF/microwave/... | 12/01/2009 |
| 7521733 | Method for manufacturing an integrated circuit and integrated circuit with a bipolar transistor and a hetero bipolar transistor For the integration of an npn bipolar transistor with a hetero bipolar transistor, a placeholder layer is generated in a base region of the hetero bipolar transistor after structuring a collector structure for both types of transistors, wherein the placeholder layer... | 04/21/2009 |
| 7432538 | Field-effect transistor A field-effect transistor includes a channel layer having a channel and a carrier supply layer, disposed on the channel layer, containing a semiconductor represented by the formula AlxGa1-xN, wherein x is greater than 0.04 and less than 0.45. T... | 10/07/2008 |
| 7420226 | Method for integrating silicon CMOS and AlGaN/GaN wideband amplifiers on engineered substrates High-speed silicon CMOS circuits and high-power AlGaN/GaN amplifiers are integrated on the same wafer. A thin layer of high resistivity silicon is bonded on a substrate. Following the bonding, an AlGaN/GaN structure is grown over the bonded silicon layer. A silicon ... | 09/02/2008 |
| 7407859 | Compound semiconductor device and its manufacture A compound semiconductor device has: a substrate; a GaN channel layer; an n-type AlqGal-qN (0 | 08/05/2008 |
| 7382001 | Enhancement mode III-nitride FET A III-nitride switch includes a recessed gate contact to produce a nominally off, or an enhancement mode, device. By providing a recessed gate contact, a conduction channel formed at the interface of two III-nitride materials is interrupted when the gate electrode i... | 06/03/2008 |
| 7368358 | Method for producing field effect device that includes epitaxially growing SiGe source/drain regions laterally from a silicon body A structure, and method of fabrication, for high performance field effect devices is disclosed. The MOS structures include a crystalline Si body of one conductivity type, a strained SiGe layer epitaxially grown on the Si body serving as a buried channel for holes, a... | 05/06/2008 |
| 7361536 | Method of fabrication of a field effect transistor with materialistically different two etch stop layers in an enhanced mode transistor and an depletion mode transistor A semiconductor structure a structure with an enhancement mode transistor device disposed in a first region and depletion mode transistor device disposed in a laterally displaced second region. The structure has a channel layer for the depletion mode and enhancement... | 04/22/2008 |
| 7339206 | Field effect transistor including a group III-V compound semiconductor layer A field effect transistor (FET) includes a first semiconductor layer and a second semiconductor layer, the second semiconductor layer being formed on the first semiconductor layer and having a band gap energy greater than that of the first semiconductor layer. The f... | 03/04/2008 |
| 7335974 | Multi stack packaging chip and method of manufacturing the same A multi stack packaging chip and a method of manufacturing the chip are provided. The method includes forming at least one second circuit element on a first wafer; forming a second wafer having a cavity and a one third circuit element formed opposite to the cavity; ... | 02/26/2008 |
| 7332752 | Optoelectronic circuit employing a heterojunction thyristor device to convert a digital optical signal to a digital electrical signal An optoelectronic circuit includes a resonant cavity formed on a substrate and into which is injected an input digital optical signal that encodes bits of information (each bit representing an OFF logic level or an ON logic level). A heterojunction thyristor device,... | 02/19/2008 |
| 7333733 | Optoelectronic clock generator producing high frequency optoelectronic pulse trains with variable frequency and variable duty cycle and low jitter An optoelectronic pulse generator is provided that includes a thyristor detector/emitter device having an input port and an output port. The thyristor detector/emitter device is adapted to detect an input optical pulse supplied to the input port and to produce an ou... | 02/19/2008 |
| 7329923 | High-performance CMOS devices on hybrid crystal oriented substrates An integrated semiconductor structure containing at least one device formed upon a first crystallographic surface that is optimal for that device, while another device is formed upon a second different crystallographic surface that is optimal for the other device is... | 02/12/2008 |
| 7329894 | Semiconductor laser device and semiconductor optical modulator Since the semiconductor devices including a stacked structure of group-III-V alloy semiconductor layers different in the kind of group-V constituent atom form the so-called band line-up of type II, band discontinuity in the heterostructure has impeded smooth transpo... | 02/12/2008 |
| 7329910 | Semiconductor substrates and field effect transistor constructions The invention includes methods of forming field effect transistor gates. In one implementation, a series of layers is formed proximate a semiconductive material channel region. The layers comprise a gate dielectric layer and a conductive metal-comprising layer havin... | 02/12/2008 |
| 7326953 | Layer sequence for Gunn diode The invention relates to a layered construction for a Gunn diode. The layered construction comprises a series of stacked layers consisting of a first highly doped nd GaAs layer (3), a graded AlGaAs layer (5), which is placed upon the first h... | 02/05/2008 |
| 7323728 | Semiconductor device Disclosed is a semiconductor device including an n+-type semiconductor layer formed on a substrate, a first n-type semiconductor layer formed on the n+-type semiconductor layer, a p-type semiconductor layer formed on the first n-type semiconduc... | 01/29/2008 |
| 7303949 | High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufacture A semiconductor device and method of manufacturing a semiconductor device. The semiconductor device includes channels for a pFET and an nFET. A SiGe layer is selectively grown in the source and drain regions of the pFET channel and a Si:C layer is selectively grown ... | 12/04/2007 |
| 7301181 | Heterojunction bipolar transistor having an emitter layer made of a semiconductor material including aluminum The present invention aims at providing a heterojunction bipolar transistor having improved breakdown voltage on operation for high power output, and includes: a GaAs semiconductor substrate 100; an n+-type GaAs sub-collector layer 110; an n... | 11/27/2007 |
| 7285806 | Semiconductor device having an active region formed from group III nitride The semiconductor device of this invention includes an active region formed from a group III nitride semiconductor grown on a substrate and an insulating oxide film formed in a peripheral portion of the active region by oxidizing the group III nitride semiconductor.... | 10/23/2007 |
| 7279697 | Field effect transistor with enhanced insulator structure A III-nitride based field effect transistor obtains improved performance characteristics through manipulation of the relationship between the in-plane lattice constant of the interface of material layers. A high mobility two dimensional electron gas generated at the... | 10/09/2007 |
| 7262446 | Semiconductor device and process for production thereof A semiconductor device which is capable of operating with a single positive power supply and has a low gate resistance, and a process for production thereof. The semiconductor device includes a channel layer (which constitutes a current channel), a first semi... | 08/28/2007 |
| 7262116 | Low temperature epitaxial growth of silicon-containing films using close proximity UV radiation A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate... | 08/28/2007 |
| 7250641 | Nitride semiconductor device The nitride semiconductor device according to one embodiment of the present invention comprises: a silicon substrate; a first aluminum gallium nitride (AlxGa1−xN (0≦x≦1)) layer formed as a channel layer on the silicon substrate in an isla... | 07/31/2007 |
| 7250643 | Semiconductor device and method of manufacturing the same A semiconductor device includes: a gate electrode that is provided on a semiconductor layer; a source electrode and a drain electrode that are provided on the semiconductor layer so as to interpose the gate electrode; a source wall that extends from the source elect... | 07/31/2007 |
| 7247892 | Imaging array utilizing thyristor-based pixel elements An improved imaging array (and corresponding method of operation) includes a plurality of heterojunction thyristor-based pixel elements disposed within resonant cavities formed on a substrate. Each thyristor-based pixel element includes complementary n-type and p-ty... | 07/24/2007 |
| 7230284 | Insulating gate AlGaN/GaN HEMT AlGaN/GaN HEMTs are disclosed having a thin AlGaN layer to reduce trapping and also having additional layers to reduce gate leakage and increase the maximum drive current. One HEMT according to the present invention comprises a high resistivity semiconductor layer w... | 06/12/2007 |
| 7196362 | Field-effect transistor, semiconductor device including field-effect transistor, and method for manufacturing field-effect transistor and semiconductor device A high-accuracy, threshold-voltage-settable, field-effect transistor and a semiconductor device including the field-effect transistor are provided. The field-effect transistor, having a channel layer through which carriers move between a source and a drain, includes... | 03/27/2007 |
| 7195939 | Structure and method for electrical isolation of optoelectronic integrated circuits Semiconductor devices in an optoelectronic integrated circuit are electrically isolated from each other by using planar lateral oxidation to oxidize a buried semiconductor layer vertically separating the semiconductor devices. ... | 03/27/2007 |
| 7183592 | Field effect transistor A semiconductor structure a structure with an enhancement mode transistor device disposed in a first region and depletion mode transistor device disposed in a laterally displaced second region. The structure has a channel layer for the depletion mode and enhancement... | 02/27/2007 |
| 7183593 | Heterostructure resistor and method of forming the same A heterostructure resistor comprises a doped region formed in a portion of a semiconductor substrate, the substrate comprising a first semiconductor material having a first natural lattice constant. The doped region comprises a semiconductor layer overlying the semi... | 02/27/2007 |
| 7173293 | Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation A semiconductor device includes a series of layers formed on a substrate, the layers including a first plurality of layers including an n-type ohmic contact layer, a p-type modulation doped quantum well structure, an n-type modulation doped quantum well structure, a... | 02/06/2007 |
