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| Number | Title | Issue Date |
| 8188514 | Transistor An HEMT type transistor is disclosed that is a normally off type, and in which variations in the gate threshold voltage are small. A transistor is provided with a p-type region, a barrier region, an insulation film, a gate electrode. The channel region is connected ... | 05/29/2012 |
| 8188513 | Nanowire and larger GaN based HEMTS Nanowire and larger, post-based HEMTs, arrays of such HEMTs, and methods for their manufacture are provided. In one embodiment, a HEMT can include a III-N based core-shell structure including a core member (e.g., GaN), a shell member (e.g., AlGaN) surrounding a leng... | 05/29/2012 |
| 8188515 | Semiconductor device An aspect of the present invention inheres in a semiconductor device includes a semiconductor region, a source electrode and a drain electrode, which are provided on a main surface of the semiconductor region, a gate electrode exhibiting normally-off characteristics... | 05/29/2012 |
| 8183596 | High electron mobility transistor, epitaxial wafer, and method of fabricating high electron mobility transistor A high electron mobility transistor includes a free-standing supporting base having a III nitride region, a first III nitride barrier layer which is provided on the first III nitride barrier layer, a III nitride channel layer which is provided on the first III nitri... | 05/22/2012 |
| 8183595 | Normally off III-nitride semiconductor device having a programmable gate A III-nitride semiconductor device which includes a charged gate insulation body. ... | 05/22/2012 |
| 8178900 | Semiconductor device having GaN-based semiconductor layer and select composition ratio insulating film A semiconductor device includes a GaN-based semiconductor layer formed on a substrate, and an insulating film composed of any one of silicon nitride in which the composition ratio of silicon to nitrogen is 0.85 to 3.0, silicon oxide in which the composition ratio of... | 05/15/2012 |
| 8174050 | Structure of a pHEMT transistor capable of nanosecond switching A method for fabricating a transistor and the resulting transistor is disclosed. The method generally includes steps (A) to (E). Step (A) may form a high mobility layer. The high mobility layer is generally configured to carry a two-dimensional electron gas. Step (B... | 05/08/2012 |
| 8169004 | Compound semiconductor epitaxial substrate and process for producing the same A compound semiconductor epitaxial substrate and a process for producing the same are provided. The compound semiconductor epitaxial substrate comprises a single crystal substrate, a lattice mismatch compound semiconductor layer and a stress compensation layer, wher... | 05/01/2012 |
| 8169005 | High voltage GaN transistors A multiple field plate transistor includes an active region, with a source, a drain, and a gate. A first spacer layer is over the active region between the source and the gate and a second spacer layer over the active region between the drain and the gate. A first f... | 05/01/2012 |
| 8164117 | Nitride semiconductor device A nitride semiconductor device includes: a main semiconductor region comprising a first nitride semiconductor layer having a first band gap, and a second nitride semiconductor layer having a second band gap larger than the first band gap, a heterojunction being form... | 04/24/2012 |
| 8164118 | Semiconductor device and its manufacturing method An object of the present invention is to reduce on-state resistance and increases reliability in a semiconductor device having an electrode formed in a recessed structure. As illustrated in FIG. 1B, a first insulating layer 103 is formed. Then, as illu... | 04/24/2012 |
| 8164116 | Semiconductor device with hetero semiconductor region and method of manufacturing the same A semiconductor device includes: a semiconductor base; a hetero semiconductor region which is in contact with the semiconductor base and which has a band gap different from that of the semiconductor base; a first electrode connected to the hetero semiconductor regio... | 04/24/2012 |
| 8159003 | III-nitride wafer and devices formed in a III-nitride wafer A III-nitride device having a support substrate that may include a first silicon body, a second silicon body, an insulation body interposed between the first and second silicon bodies, and a III-nitride body formed over the second silicon body. ... | 04/17/2012 |
| 8159004 | Compound semiconductor device having dopant concentration gradient A semiconductor device includes a first compound semiconductor layer having a two-dimensional carrier gas channel, a second compound semiconductor layer which functions as a barrier layer and is arranged above the first compound semiconductor layer, a first main ele... | 04/17/2012 |
| 8148752 | Field effect transistor A field effect transistor includes a semiconductor stack formed on a substrate, and having a first nitride semiconductor layer and a second nitride semiconductor layer. A source electrode and a drain electrode are formed on the semiconductor stack so as to be separa... | 04/03/2012 |
| 8143650 | Semiconductor device having resistance layer formed on side surface of semiconductor layer A semiconductor device 1 includes a substrate 2 having on a main surface thereof a central area and a peripheral area which surrounds the central area and is exposed, a semiconductor layer 4 which is formed on the main surface of the substrate | 03/27/2012 |
| 8143649 | Compound semiconductor device and manufacturing method of the same An i-GaN layer (electron transit layer), an n-GaN layer (compound semiconductor layer) formed over the i-GaN layer (electron transit layer), and a source electrode, a drain electrode and a gate electrode formed over the n-GaN layer (compound semiconductor layer) are... | 03/27/2012 |
| 8143648 | Unipolar tunneling photodetector A photodetector containing a 2DEG layer is disclosed. ... | 03/27/2012 |
| 8134182 | Field-effect transistor, semiconductor device including the field-effect transistor, and method of producing semiconductor device A field-effect transistor includes a semi-insulating substrate, a source electrode, a drain electrode, a gate electrode, the electrodes being provided on the semi-insulating substrate, and a buried gate region which is provided under the gate electrode and in which ... | 03/13/2012 |
| 8125004 | Field-effect semiconductor device A heterojunction field-effect semiconductor device has a main semiconductor region comprising two layers of dissimilar materials such that a two-dimensional electron gas layer is generated along the heterojunction between the two layers. A source and a drain electro... | 02/28/2012 |
| 8120066 | Single voltage supply pseudomorphic high electron mobility transistor (PHEMT) power device and process for manufacturing the same Disclosed herein is a pseudomorphic high electron mobility transistor (PHEMT) power device (1) including a semi-insulating substrate (2); an epitaxial substrate (3) formed on the semi-insulating substrate (2) a contact layer (19). ... | 02/21/2012 |
| 8115234 | Semiconductor device There is provided a technique for reducing the occurrence of higher harmonics which occur from a field effect transistor, particularly a field effect transistor configuring a switching element of an antenna switch. In a transistor having a meander structure, the gat... | 02/14/2012 |
| 8101972 | Nitride semiconductor device and method for fabricating the same A nitride semiconductor device includes: first through third nitride semiconductor layers formed in sequence over a substrate. The second nitride semiconductor layer has a band gap energy larger than that of the first nitride semiconductor layer. The third nitride s... | 01/24/2012 |
| 8089097 | Homoepitaxial gallium-nitride-based electronic devices and method for producing same There is provided an electronic device. The electronic device includes at least one epitaxial semiconductor layer disposed on a single crystal substrate comprised of gallium nitride having a dislocation density less than about 105 per cm2. A me... | 01/03/2012 |
| 8084785 | III-nitride power semiconductor device having a programmable gate A III-nitride semiconductor device which includes a charged floating gate electrode. ... | 12/27/2011 |
| 8076699 | Integrated HEMT and lateral field-effect rectifier combinations, methods, and systems Integrated high efficiency lateral field effect rectifier and HEMT devices of GaN or analogous semiconductor material, methods for manufacturing thereof, and systems which include such integrated devices. The lateral field effect rectifier has an anode containing a ... | 12/13/2011 |
| 8076698 | Transistor and method for operating the same In a transistor, an AlN buffer layer 102, an undoped GaN layer 103, an undoped AlGaN layer 104, a p-type control layer 105, and a p-type contact layer 106 are formed in this order on a sapphire substrate 101. The transistor ... | 12/13/2011 |
| 8072002 | Field effect transistor A field effect transistor formed of a semiconductor of a III group nitride compound, includes an electron running layer formed on a substrate and formed of GaN; an electron supplying layer formed on the electron running layer and formed of AlxGa1-x | 12/06/2011 |
| 8049252 | Methods of fabricating transistors including dielectrically-supported gate electrodes and related devices Transistors are fabricated by forming a protective layer having a first opening extending therethrough on a substrate, forming a dielectric layer on the protective layer having a second opening extending therethrough that is wider than the first opening, and forming... | 11/01/2011 |
| 8044433 | GaN-based high electron mobility transistor (HEMT) with an embedded gate electrode having a first recess portion and a second recess portion to improve drain breakdown voltage A semiconductor device includes a substrate, a GaN-based semiconductor layer formed on the substrate, a gate electrode embedded in the GaN-based semiconductor layer, a source electrode and a drain electrode formed on both sides of the gate electrode, a first recess ... | 10/25/2011 |
| 8044434 | Semiconductor device employing group III-V nitride semiconductors and method for manufacturing the same The semiconductor device includes a P-type group III-V nitride semiconductor layer, an N-type group III-V nitride semiconductor layer, and an electrode in contact with both of the P-type group III-V nitride semiconductor layer and the N-type group III-V nitride semi... | 10/25/2011 |
| 8039872 | Nitride semiconductor device including a group III nitride semiconductor structure A nitride semiconductor device according to the present invention includes a Group III nitride semiconductor; and an insulating film containing oxygen formed on the surface of the Group III nitride semiconductor, wherein the nitrogen concentration in a region provid... | 10/18/2011 |
| 8039871 | Semiconductor device A semiconductor device includes: a compound semiconductor substrate; a buffer layer, a channel layer, and a Schottky junction forming layer sequentially formed on the compound semiconductor substrate, the buffer layer, the channel layer, and the Schottky junction fo... | 10/18/2011 |
| 8035130 | Nitride semiconductor heterojunction field effect transistor having wide band gap barrier layer that includes high concentration impurity region The objective of the present invention is to provide a semiconductor device of a hetero-junction field effect transistor that is capable of obtaining a high output and a high breakdown voltage and a manufacturing method of the same. The present invention is a semico... | 10/11/2011 |
| 8030687 | Field effect transistor incorporating at least one structure for imparting temperature-dependent strain on the channel region and associated method of forming the transistor Disclosed are embodiments of a field effect transistor (FET) having decreased drive current temperature sensitivity. Specifically, any temperature-dependent carrier mobility change in the FET channel region is simultaneously counteracted by an opposite strain-depend... | 10/04/2011 |
| 8030688 | Ohmic metal contact protection using an encapsulation layer A method for fabricating a semiconductor device which protects the ohmic metal contacts and the channel of the device during subsequent high temperature processing steps is explained. An encapsulation layer is used to cover the channel and ohmic metal contacts. The ... | 10/04/2011 |
| 8022440 | Compound semiconductor epitaxial substrate and manufacturing method thereof A compound semiconductor epitaxial substrate having a pseudomorphic high electron mobility field effect transistor structure including an InGaAs layer as a strained channel layer and an AlGaAs layer containing n type impurities as a front side electron-donating laye... | 09/20/2011 |
| 8017979 | Semiconductor device and method for manufacturing the same It is made possible to restrict strain relaxation even if a strained semiconductor element is formed on a very small minute layer. A semiconductor device includes: a substrate; a first semiconductor layer formed into a mesa shape above the substrate and having strai... | 09/13/2011 |
| 8017978 | Hybrid semiconductor device A hybrid device including a silicon based MOSFET operatively connected with a GaN based device. ... | 09/13/2011 |
| 7999288 | High voltage durability III-nitride semiconductor device A high voltage durability III-nitride semiconductor device comprises a support substrate including a first silicon body, an insulator body over the first silicon body, and a second silicon body over the insulator body. The high voltage durability III-nitride semicon... | 08/16/2011 |
