Class 257/192 - Field effect transistor

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the heterojunction is part of a field
No. of patents: 1271
Last issue date: 05/15/2012

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Number	Title	Issue Date
8178899	Semiconductor device and fabrication method of the semiconductor device A semiconductor device and a fabrication method of the semiconductor device, the semiconductor device including: a substrate; a nitride based compound semiconductor layer placed on the substrate and doped with a first transition metal atom; an aluminum gallium nitri...	05/15/2012
8174048	III-nitride current control device and method of manufacture A III-nitride device includes a recessed electrode to produce a nominally off, or an enhancement mode, device. By providing a recessed electrode, a conduction channel formed at the interface of two III-nitride materials is interrupted when the electrode contact is i...	05/08/2012
8174049	Semiconductor device and method of fabricating the same A semiconductor device according to one embodiment includes: a semiconductor substrate having first and second regions; a first transistor comprising a first gate insulating film and a first gate electrode thereon in the first region on the semiconductor substrate, ...	05/08/2012
8169003	Termination and contact structures for a high voltage GaN-based heterojunction transistor A semiconductor device is provided that includes a substrate, a first active layer disposed over the substrate, and a second active layer disposed on the first active layer. The second active layer has a higher bandgap than the first active layer such that a two-dim...	05/01/2012
8169002	High electron mobility transistor and method for fabricating the same A high electron mobility transistor includes a substrate, a buffer layer, a channel layer, a spacer layer, a schottky layer and a cap layer. The buffer layer is formed on the substrate. The channel layer is formed on the buffer layer, in which the channel layer comp...	05/01/2012
8164115	Nitride semiconductor device A nitride semiconductor device includes: a substrate; a first nitride semiconductor layer formed over the substrate; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a larger band gap energy than the first nitride semic...	04/24/2012
8159002	Heterostructure device and associated method A heterostructure device includes a semiconductor multi-layer structure that has a first region, a second region and a third region. The first region is coupled to a source electrode and the second region is coupled to a drain electrode. The third region is disposed...	04/17/2012
8154051	MOS transistor with in-channel and laterally positioned stressors A strained channel transistor can be provided by combining a stressor positioned in the channel region with stressors positioned on opposite sides of the channel region. This produces increased strain in the channel region, resulting in correspondingly enhanced tran...	04/10/2012
8148751	Group III nitride semiconductor wafer and group III nitride semiconductor device A group III nitride semiconductor device and a group III nitride semiconductor wafer are provided. The group III nitride semiconductor device has a channel layer comprising group III nitride-based semiconductor containing Al. The group III nitride semiconductor devi...	04/03/2012
8134181	Semiconductor device A semiconductor device includes a substrate; a buffer layer; and a compound semiconductor layer laminated on the substrate with the buffer layer in between. The buffer layer has a dislocation density in a plane in parallel to an in-plane direction thereof, so that a...	03/13/2012
8134180	Nitride semiconductor device with a vertical channel and method for producing the nitride semiconductor device A nitride semiconductor device includes: a semiconductor base layer made of a conductive group III nitride semiconductor having a principal plane defined by a nonpolar plane or a semipolar plane; an insulating layer formed on the principal plane of the semiconductor...	03/13/2012
8129748	Nitride semiconductor device and method for fabricating the same A nitride semiconductor device includes: a first nitride semiconductor layer; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a wider band gap than the first nitride semiconductor layer; and a third nitride semiconduct...	03/06/2012
8129749	Double quantum well structures for transistors Double quantum well structures for transistors are generally described. In one example, an apparatus includes a semiconductor substrate, one or more buffer layers coupled to the semiconductor substrate, a first barrier layer coupled to the one or more buffer layers,...	03/06/2012
8120064	Wide bandgap transistor devices with field plates A transistor structure comprising an active semiconductor layer with metal source and drain contacts formed in electrical contact with the active layer. A gate contact is formed between the source and drain contacts for modulating electric fields within the active l...	02/21/2012
8120065	Tensile strained NMOS transistor using group III-N source/drain regions Enhancement mode transistors are described where a Group III-N compound is used in the source and drain regions to place tensile strain on the channel. The source and drain regions may be raised or embedded, and fabricated in conjunction with recessed or raised comp...	02/21/2012
8115233	Field effect transistor having multiple pinch off voltages A compound field effect transistor having multiple pinch-off voltages, comprising first and second field effect transistors, each field effect transistor comprising a semiconductor layer, the semiconductor layer having an electrically conducting layer therein. An oh...	02/14/2012
8106423	Method and structure using a pure silicon dioxide hardmask for gate patterning for strained silicon MOS transistors A structure using pure silicon dioxide hard marsk for gate pattern. In an embodiment, the present invention provides a partially completed semiconductor integrated circuit device. The device has a semiconductor substrate and a dielectric layer overlying the semicond...	01/31/2012
8106424	Field effect transistor with a heterostructure A field effect transistor with a heterostructure includes a strained monocrystalline semiconductor layer formed on a carrier material, which has a relaxed monocrystalline semiconductor layer made of a first semiconductor material (Si) as the topmost layer. The strai...	01/31/2012
8093627	Nitride semiconductor device and method for producing nitride semiconductor device This nitride semiconductor device comprises: an n-type first layer made of a group III nitride semiconductor; a p-type second layer made of a group III nitride semiconductor layer provided on the first layer; and an n-type third layer made of a group III nitride sem...	01/10/2012
8093626	Normally-off field effect transistor using III-nitride semiconductor and method for manufacturing such transistor Provided is a normally-off field effect transistor using a III-nitride semiconductor. The transistor is provided with a III-nitride semiconductor layer grown on a substrate by including an acceptor and a donor; a gate insulating film which is formed on the III-nitri...	01/10/2012
8089096	Field effect transistor with main surface including C-axis A normally-off type field effect transistor includes: a first semiconductor layer which is made of a first hexagonal crystal with 6 mm symmetry and has a main surface including a C-axis of the first hexagonal crystal; a second semiconductor layer which is formed on ...	01/03/2012
8067788	Semiconductor device A semiconductor device includes a substrate common to a first field effect transistor and a second field effect transistor, a channel layer of a first conductivity type formed on the substrate and common to the first and second field effect transistors, a an upper c...	11/29/2011
8049251	Semiconductor device and method for manufacturing the same In a semiconductor film having a heterojunction structure, for example a semiconductor film (11) including a SiGe layer (2) and a Si layer (3) formed on the SiGe layer (2), impurity concentration is controlled in such a manner that the co...	11/01/2011
8044432	Low density drain HEMTs Methods and devices for fabricating AlGaN/GaN normally-off high electron mobility transistors (HEMTs). A fluorine-based (electronegative ions-based) plasma treatment or low-energy ion implantation is used to modify the drain-side surface field distribution without t...	10/25/2011
8039870	Multifinger carbon nanotube field-effect transistor A multifinger carbon nanotube field-effect transistor (CNT FET) is provided in which a plurality of nanotube top gated FETs are combined in a finger geometry along the length of a single carbon nanotube, an aligned array of nanotubes, or a random array of nanotubes....	10/18/2011
8035129	Integrated circuitry This invention includes methods of forming layers comprising epitaxial silicon, and field effect transistors. In one implementation, a method of forming a layer comprising epitaxial silicon comprises epitaxially growing a silicon-comprising layer from an exposed mon...	10/11/2011
8035128	Semiconductor device and method for fabricating the same There is provided a semiconductor device and a method for fabricating the same whose withstanding characteristic may be enhanced and whose ON resistance may be reduced. A MIS-type HEMT includes a carrier traveling layer made of a group-III nitride semiconductor and ...	10/11/2011
8030686	Semiconductor device and method for manufacturing the same A semiconductor device having a source electrode and a drain electrode formed over a semiconductor substrate, a gate electrode formed over the semiconductor substrate and disposed between the source electrode and the drain electrode, a protection film made of an ins...	10/04/2011
8026535	Thin film transistor and organic electroluminescence display using the same In a thin film transistor, a semiconductor layer containing Si and Ge is applied, a Ge concentration of this semiconductor layer is high at the side of the insulating substrate, and crystalline orientation of the semiconductor layer indicates a random orientation in...	09/27/2011
8022439	Semiconductor device comprising gate electrode surrounding entire circumference of channel region and method for manufacturing the same Two first semiconductor layers are on a silicon substrate at a given distance from each other. Two second semiconductor layers are on the respective first semiconductor layers and includes a material different from a material of the first semiconductor layers. A fir...	09/20/2011
8008689	MIS gate structure type HEMT device and method of fabricating MIS gate structure type HEMT device A normally-off operation type HEMT device excellent in characteristics can be realized. A two-dimensional electron gas region is formed in a periphery of a hetero-junction interface of a base layer and a barrier layer, so that access resistance in an access portion,...	08/30/2011
8004011	Field effect transistor A material of a gate electrode is a conductive oxide having a higher work function than that of conventionally used Pd and so on, thereby achieving a normally-off transistor without reducing the sheet carrier concentration of a heterojunction. It is thus possible to...	08/23/2011
7994540	Gallium nitride material transistors and methods associated with the same Gallium nitride material transistors and methods associated with the same are provided. The transistors may be used in power applications by amplifying an input signal to produce an output signal having increased power. The transistors may be designed to transmit th...	08/09/2011
7989843	Semiconductor and method for producing the same A method produces a semiconductor by conducting superimposed doping of a plurality of dopants in a semiconductor substrate, which includes evaporating a (2×n) structure by a first dopant and forming its thin line structure on the substrate, then bringing the semico...	08/02/2011
7985985	Semiconductor device and method of fabricating the same A semiconductor device according to one embodiment includes: a semiconductor substrate; a first impurity diffusion suppression layer formed on the semiconductor substrate for suppressing diffusion of a channel impurity; an impurity channel layer formed on the first ...	07/26/2011
7977707	Capacitorless DRAM having a hole reserving unit Provided are a capacitorless DRAM and methods of manufacturing the same. The capacitorless DRAM may include a substrate including a source, a drain and a channel, a gate on the channel of the substrate, and a hole reserving unit below the channel. ...	07/12/2011
7968912	Semiconductor device and method for fabricating the same A semiconductor device includes a substrate, a gate formed over the substrate, a gate spacer provided against first and second sidewalls of the gate, and a source/drain region formed in the substrate proximate to the gate spacer. The source/drain region includes fir...	06/28/2011
7964895	III-nitride heterojunction semiconductor device and method of fabrication A III-nitride heterojunction power semiconductor device having a barrier layer that includes a region of reduced nitrogen content. ...	06/21/2011
7960755	Strained quantum-well semiconductor devices In a transistor in which the majority carriers are holes, at least one narrow bandgap region or layer is doped p-type or contains an excess of holes and is subject to compressive mechanical strain, whereby hole mobility may be significantly increased. In a p-channel...	06/14/2011
7960756	Transistors including supported gate electrodes A transistor includes a protective layer having an opening extending therethrough on a substrate, and a gate electrode in the opening. First portions of the gate electrode laterally extend on surface portions of the protective layer outside the opening on opposite s...	06/14/2011

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Class 257/192 - Field effect transistor