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| Number | Title | Issue Date |
| 8017977 | Field effect transistor having recessed gate in compositional graded layer A GaN heterojunction FET has an AlxGa1-xN first graded layer and an AlyGa1-yN second graded layer, which are formed sequentially on a channel layer. The Al mole fraction x of the first graded layer decreases linearly from,... | 09/13/2011 |
| 7791106 | Gallium nitride material structures including substrates and methods associated with the same Gallium nitride material-based semiconductor structures are provided. In some embodiments, the structures include a composite substrate over which a gallium nitride material region is formed. The gallium nitride material structures may include additional features, s... | 09/07/2010 |
| 7605407 | Composite stressors with variable element atomic concentrations in MOS devices A semiconductor device includes a semiconductor substrate, a gate stack on the semiconductor substrate, and a stressor adjacent the gate stack and having at least a portion in the semiconductor substrate, wherein the stressor comprises an element for adjusting a lat... | 10/20/2009 |
| 7557388 | MOSFET formed on a strained silicon layer A semiconductor device formed on a strained silicon layer and a method of manufacturing such a semiconductor device are disclosed. In accordance with this invention, a first silicon germanium layer is formed on a single crystalline silicon substrate; a second silico... | 07/07/2009 |
| 7432541 | Metal oxide semiconductor field effect transistor A metal oxide semiconductor field effect transistor (MOSFET) is disclosed. The MOSFET includes a semiconductor substrate, a germanium layer formed by implanting germanium (Ge) ions into the semiconductor substrate, an epitaxial layer doped with high concentration im... | 10/07/2008 |
| 7423292 | Semiconductor device, EL display device, liquid crystal display device, and calculating device There is provided a semiconductor device able to increase the mobility of carriers and reduce the current in the OFF state. The semiconductor device includes a gate electrode, an insulating layer on the gate electrode, a first electrode on the insulating layer, a se... | 09/09/2008 |
| 7394111 | Strained Si/SiGe structures by ion implantation One aspect of this disclosure relates to a method for forming a strained silicon over silicon germanium (Si/SiGe) structure. In various embodiments, germanium ions are implanted into a silicon substrate with a desired dose and energy to be located beneath a surface ... | 07/01/2008 |
| 7375385 | Semiconductor heterostructures having reduced dislocation pile-ups Dislocation pile-ups in compositionally graded semiconductor layers are reduced or eliminated, thereby leading to increased semiconductor device yield and manufacturability. This is accomplished by introducing a semiconductor layer having a plurality of threading di... | 05/20/2008 |
| 7368762 | Heterojunction photodiode The present invention provides a heterojunction photodiode which includes a pn or Schottky-barrier junction formed in a first material region having a bandgap energy Eg1. When reverse-biased, the junction creates a depletion region which expands towards a... | 05/06/2008 |
| 7369168 | Circuit for an active pixel sensor A pixel circuit includes a silicon substrate having a photodiode that converts light intensity into a voltage signal and two metal layers disposed on the substrate having a pixel control circuit. The first metal layer includes a row trace and a reset trace and the s... | 05/06/2008 |
| 7368308 | Methods of fabricating semiconductor heterostructures Dislocation pile-ups in compositionally graded semiconductor layers are reduced or eliminated, thereby leading to increased semiconductor device yield and manufacturability. This is accomplished by introducing a semiconductor layer having a plurality of threading di... | 05/06/2008 |
| 7365374 | Gallium nitride material structures including substrates and methods associated with the same Gallium nitride material-based semiconductor structures are provided. In some embodiments, the structures include a composite substrate over which a gallium nitride material region is formed. The gallium nitride material structures may include additional features, s... | 04/29/2008 |
| 7366216 | Semiconductor laser element formed on substrate having tilted crystal orientation A semiconductor laser element having a structure in which at least one AlGaInP or GaInP layer is formed above a GaAs substrate. The crystal orientation of the principal plane of the GaAs substrate is tilted from (100) toward (111). When the total thickness of the at... | 04/29/2008 |
| 7351994 | Noble high-k device At least one high-k device, and a method for forming the at least one high-k device, comprising the following. A structure having a strained substrate formed thereover. The strained substrate comprising at least an uppermost strained-Si epi layer. At least one diele... | 04/01/2008 |
| 7348608 | Planar avalanche photodiode A planar avalanche photodiode includes a small localized contact layer on the top of the device produced by either a diffusion or etching process and a semiconductor layer defining a lower contact area. A semiconductor multiplication layer is positioned between the ... | 03/25/2008 |
| 7349248 | Non-volatile memory A non-volatile memory cell includes an upper electrode; a lower electrode and a state-variable region, in which a conductive state changes only once. The state variable region is formed in a region between the upper electrode and the lower electrode. The state-varia... | 03/25/2008 |
| 7348607 | Planar avalanche photodiode The present invention includes a planar avalanche photodiode having a first n-type semiconductor layer defining a planar contact area, and a second n-type semiconductor layer having a p-type diffusion region. Further features of the structure includes an n-type semi... | 03/25/2008 |
| 7339255 | Semiconductor device having bidirectionally inclined toward <1-100> and <11-20> relative to {0001} crystal planes A semiconductor substrate encompasses a GaN substrate and a single-crystal layer formed of III-V nitride compound semiconductor epitaxially grown on the GaN substrate. The GaN substrate has a surface orientation defined by an absolute value of an off-angle of the su... | 03/04/2008 |
| 7323721 | Monolithic multi-color, multi-quantum well semiconductor LED A monolithic, multi-color semiconductor light emitting diode (LED) is formed with a multi-bandgap, multi-quantum well (MQW) active light emitting region which emits light at spaced-apart wavelength bands or regions ranging from UV to red. The MQW active light emitti... | 01/29/2008 |
| 7312474 | Group III nitride based superlattice structures A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well structure. The quantum well structure includes a first Group III nitride... | 12/25/2007 |
| 7309876 | Organic semiconductor having polymeric and nonpolymeric constituents A composition, comprising organic polymer molecules, and organic nonpolymeric molecules, wherein the composition is a semiconducting solid. The composition includes a distribution of crystal domains of the polymer molecules and inter-domain regions between the cryst... | 12/18/2007 |
| 7301180 | Structure and method for a high-speed semiconductor device having a Ge channel layer The invention provides semiconductor structure comprising a strained Ge channel layer, and a gate dielectric disposed over the strained Ge channel layer. In one aspect of the invention, a strained Ge channel MOSFET is provided. The strained Ge channel MOSFET include... | 11/27/2007 |
| 7301189 | Solid-state image sensing device and method for manufacturing the same In the solid-state image sensing device, a first N type semiconductor region and an N well of a PMOS region are formed in the same process, thereby making the first N type semiconductor region and the N well in the PMOS region substantially equal in N type impurity ... | 11/27/2007 |
| 7282428 | Method for solid phase diffusion of zinc into an InP-based photodiode and an InP photodiode made with the method In order to form a p-region in an InP-based photodiode, zinc doping must be performed. Due to the current trend toward the implementation of larger-sized InP wafers, there is a need for a solid phase diffusion method in which a ZnO thin film is applied to an epitaxi... | 10/16/2007 |
| 7279697 | Field effect transistor with enhanced insulator structure A III-nitride based field effect transistor obtains improved performance characteristics through manipulation of the relationship between the in-plane lattice constant of the interface of material layers. A high mobility two dimensional electron gas generated at the... | 10/09/2007 |
| 7279350 | White-light emitting devices and methods for manufacturing the same White-light emitting devices and methods for manufacturing the same. The white-light emitting device emits white light comprising a first color component with first wavelength, a second color component with a second wavelength, and a third color component with a thi... | 10/09/2007 |
| 7279712 | Solid state image pickup device and method of producing solid state image pickup device Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for t... | 10/09/2007 |
| 7276723 | Ultra-linear multi-channel field effect transistor Alternate layers of wide band gap and narrow band gaps of different kinds of semiconductors are used to form multiple channels of a FET. The channels are doped or formed as 2-DEG/2-DHG in narrow band semiconductor by charge supply layer in the wide band gap semicond... | 10/02/2007 |
| 7262485 | Substrate for growing electro-optical single crystal thin film and method of manufacturing the same A substrate 1 for growing an electro-optical single crystal thin film in which two or more layers of buffer layers 3, 4, and 5 for buffering lattice mismatch between Si and BTO are formed on an Si (001) substrate 2 is provided as a substr... | 08/28/2007 |
| 7262466 | Strained semiconductor-on-insulator structures and methods for making strained semiconductor-on-insulator structures The present invention relates to semiconductor-on-insulator structures having strained semiconductor layers. According to one embodiment of the invention, a semiconductor-on-insulator structure has a first layer including a semiconductor material, attached to a seco... | 08/28/2007 |
| 7253454 | High electron mobility transistor A HEMT device including a GaN channel structure including a very thin (Al,In,Ga)N subchannel layer that is disposed between a first GaN channel layer and a second GaN channel layer, to effect band bending induced from the piezoelectric and spontaneous charges associ... | 08/07/2007 |
| 7250970 | Image pickup apparatus An image pickup device including an array of a plurality of pixels including photoelectric conversion portions for accumulating signal charges generated by photoelectric conversion and an amplifying transistor for amplifying the signal charges generated by the photo... | 07/31/2007 |
| 7250359 | Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization A semiconductor structure including a semiconductor substrate, at least one first crystalline epitaxial layer on the substrate, the first layer having a surface which is planarized, and at least one second crystalline epitaxial layer on the at least one first layer.... | 07/31/2007 |
| 7242038 | Heterojunction bipolar transistor An n-type InP sub collector layer 2 heavily doped with silicon (Si), an InP collector layer 3, a p-type GaAs(0.51)Sb(0.49) base layer 4 heavily doped with carbon (C), an n-type In(1-y)Al(y)P emitter la... | 07/10/2007 |
| 7235821 | Optical device with quantum well An optical device with a quantum well is provided. The optical device includes an active layer made of a Group III-V semiconductor compound and having a quantum well of a bandgap grading structure in which conduction band energy and valence band energy change linear... | 06/26/2007 |
| 7229874 | Method and apparatus for allowing formation of self-aligned base contacts A method and apparatus for depositing self-aligned base contacts where over-etching the emitter sidewall to undercut the emitter contact is not needed. A semiconductor structure has a T-shaped emitter contact that comprises a T-top and T-foot. The T-top acts as a ma... | 06/12/2007 |
| 7224007 | Multi-channel transistor with tunable hot carrier effect A multiple channel transistor provides a transistor with an improved drive current and speed by using tunable hot carrier effects. A thin gate oxide has a carrier confinement layer formed on top thereof. Holes produced by hot carrier effects are retained by the carr... | 05/29/2007 |
| 7217974 | Output prediction logic circuits with ultra-thin vertical transistors and methods of formation Very fast integrated OPL circuits, such as pseudo-NMOS OPL and dynamic OPL, comprising CMOS gate arrays having ultra-thin vertical NMOS transistors are disclosed. The ultra-thin vertical NMOS transistors of the CMOS gate arrays are formed with relaxed silicon german... | 05/15/2007 |
| 7215368 | Photoelectric conversion device with photoelectric conversion units stacked in a depth direction and corresponding read transistor structure In a photoelectric conversion device having a plurality of pixel circuits, a read transistor, a main electrode of which is connected to a charge accumulation node of a photoelectric conversion unit in each pixel circuit is operated in a pentode region, so as to read... | 05/08/2007 |
| 7214598 | Formation of lattice-tuning semiconductor substrates In order to reduce dislocation pile-ups in a virtual substrate, a buffer layer 32 is provided, between an underlying Si substrate 34 and an uppermost constant composition SiGe layer 36, which comprises alternating graded SiGe layers 38 an... | 05/08/2007 |
