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Actor Marlon Brando has four patents, all named "Drumhead tensioning device and method."
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| Number | Title | Issue Date |
| 8030685 | Detector system and detector subassembly A detector system with a microelectronic semiconductor chip and a separate optoelectronic detector chip is specified, wherein the detector chip is positioned on the semiconductor chip. A detector subassembly with such a detector system is also specified. ... | 10/04/2011 |
| 8026534 | III-V semiconductor device structures The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication. ... | 09/27/2011 |
| 7973335 | Field-effect transistor having group III nitride electrode structure A field plate portion (5) overhanging a drain side in a visored shape is formed in a gate electrode (2). A multilayered film including a SiN film (21) and a SiO2 film (22) is formed beneath the field plate portion (5). T... | 07/05/2011 |
| 7968909 | Reconditioned substrates for fabricating compound material wafers Reconditioned donor substrates that include a remainder substrate from a donor substrate wherein the remainder substrate has a detachment surface where a transfer layer was detached and an opposite surface; and an additional layer deposited upon the opposite surface... | 06/28/2011 |
| 7943963 | Organic light-emitting display device The present invention provides a top emission type organic light-emitting display device in a production of which it is possible to prevent the organic film from being oxidized when the upper transparent electrode is formed, and which is capable of emitting light at... | 05/17/2011 |
| 7800129 | Optical device with quantum well An optical device with a quantum well is provided. The optical device includes an active layer made of a Group III-V semiconductor compound and having a quantum well of a bandgap grading structure in which conduction band energy and valence band energy change linear... | 09/21/2010 |
| 7687827 | III-nitride materials including low dislocation densities and methods associated with the same Semiconductor structures including one, or more, III-nitride material regions (e.g., gallium nitride material region) and methods associated with such structures are provided. The III-nitride material region(s) advantageously have a low dislocation density and, in p... | 03/30/2010 |
| 7528423 | Semiconductor device It is an object of the present invention to provide a semiconductor device, which can simultaneously achieve a normally-off mode of HFET and an improvement in Imax, and further achieve an improvement in gm and a reduction in gate leakage curren... | 05/05/2009 |
| 7442569 | Vertical GaN-based LED and method of manufacturing the same Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electr... | 10/28/2008 |
| 7423254 | High responsivity high bandwidth metal-semiconductor-metal optoelectronic device An optical device for sensing an incident optical wave within a wavelength range includes a first array and a second array of electrodes superposed on a substrate, and a sensor connected to the contacts. The arrays are interdigitated. Each array includes its own par... | 09/09/2008 |
| 7420261 | Bulk nitride mono-crystal including substrate for epitaxy The invention relates to a substrate for epitaxy, especially for preparation of nitride semiconductor layers. Invention covers a bulk nitride mono-crystal characterized in that it is a mono-crystal of gallium nitride and its cross-section in a plane perpendicular to... | 09/02/2008 |
| 7402843 | Group III-V compound semiconductor and group III-V compound semiconductor device using the same An AlGaInP layer is formed on a substrate made of GaAs, and an AlGaAs layer is formed on the AlGaInP layer via a buffer layer therebetween. The buffer layer has a thickness of about 1.1 nm and is made of AlGaInP whose Ga content is smaller than that of the AlGaInP l... | 07/22/2008 |
| 7400000 | Nitride-based semiconductor device A light-emitting diode is built on a silicon substrate doped with a p-type impurity to possess sufficient conductivity to provide a current path. The p-type silicon substrate has epitaxially grown thereon two superposed buffer layers of aluminum nitride and n-type i... | 07/15/2008 |
| 7399692 | III-nitride semiconductor fabrication A process for fabricating a III-nitride power semiconductor device which includes forming a gate structure while providing a protective body over areas that are to receive power electrodes. ... | 07/15/2008 |
| 7397066 | Microelectronic imagers with curved image sensors and methods for manufacturing microelectronic imagers Microelectronic imagers with curved image sensors and methods for manufacturing curved image sensors. In one embodiment, a microelectronic imager device includes an imager die having a substrate, a curved microelectronic image sensor having a face with a convex and/... | 07/08/2008 |
| 7375367 | Semiconductor light-emitting device having an active region with aluminum-containing layers forming the lowermost and uppermost layer A semiconductor light-emitting device fabricated in a nitride material system has an active region disposed over a substrate. The active region comprises a first aluminium-containing layer forming the lowermost layer of the active region, a second aluminium-containi... | 05/20/2008 |
| 7368762 | Heterojunction photodiode The present invention provides a heterojunction photodiode which includes a pn or Schottky-barrier junction formed in a first material region having a bandgap energy Eg1. When reverse-biased, the junction creates a depletion region which expands towards a... | 05/06/2008 |
| 7365374 | Gallium nitride material structures including substrates and methods associated with the same Gallium nitride material-based semiconductor structures are provided. In some embodiments, the structures include a composite substrate over which a gallium nitride material region is formed. The gallium nitride material structures may include additional features, s... | 04/29/2008 |
| 7345325 | Avalanche photodiode An avalanche photodiode has improved low-noise characteristics, high-speed response characteristics, and sensitivity. The avalanche photodiode includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, a semiconductor mul... | 03/18/2008 |
| 7339205 | Gallium nitride materials and methods associated with the same Semiconductor materials including a gallium nitride material region and methods associated with such structures are provided. The semiconductor structures include a strain-absorbing layer formed within the structure. The strain-absorbing layer may be formed between ... | 03/04/2008 |
| 7339206 | Field effect transistor including a group III-V compound semiconductor layer A field effect transistor (FET) includes a first semiconductor layer and a second semiconductor layer, the second semiconductor layer being formed on the first semiconductor layer and having a band gap energy greater than that of the first semiconductor layer. The f... | 03/04/2008 |
| 7323764 | Buffer structure for modifying a silicon substrate A buffer structure comprising a compositionally graded layer of a nitride alloy comprising two or more Group IIIB elements, for example La, Y, Sc or Ac, is used to modify a silicon substrate to produce a universal substrate on which a range of target materials, for ... | 01/29/2008 |
| 7320917 | Semiconductor device and method for manufacturing the same Gate length is 110 nm±15 nm or shorter (130 nm or shorter in a design rule) or an aspect ratio of an area between adjacent gate electrode structures thereof (ratio of the height of the gate electrode structure to the distance between the gate electrode structures) ... | 01/22/2008 |
| 7307292 | Semiconductor device and method for fabricating the same An insulating-gate semiconductor device has a first nitride semiconductor layer formed over a substrate and an insulating oxidation layer obtained by oxidizing a second nitride semiconductor layer formed on the first nitride semiconductor layer. A gate electrode is ... | 12/11/2007 |
| 7304325 | Group III nitride compound semiconductor light-emitting device A semiconductor laminate containing a light-emitting layer is etched to reveal a side surface. A reflection surface opposite to the side surface of the semiconductor laminate is provided in one and the same chip as the semiconductor laminate. A groove may be formed ... | 12/04/2007 |
| 7303949 | High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufacture A semiconductor device and method of manufacturing a semiconductor device. The semiconductor device includes channels for a pFET and an nFET. A SiGe layer is selectively grown in the source and drain regions of the pFET channel and a Si:C layer is selectively grown ... | 12/04/2007 |
| 7297625 | Group III-V crystal and manufacturing method thereof A method of manufacturing a group III-V crystal is made available by which good-quality group III-V crystals are easily obtained at low cost without causing cracks, even when using a variety of substrates. A method of manufacturing a group III-V crystal, characteriz... | 11/20/2007 |
| 7294518 | Composition for stripping photoresist and method for manufacturing thin film transistor array panel using the same The present invention provides a photoresist stripper including about 5 wt % to about 20 wt % alcohol amine, about 40 wt % to about 70 wt % glycol ether, about 20 wt % to about 40 wt % N-methyl pyrrolidone, and about 0.2 wt % to about 6 wt % chelating agent. ... | 11/13/2007 |
| 7291858 | QWIP with tunable spectral response A tunable QWIP FPA device that is configured for spectral tunability for performing the likes of imaging and spectroscopy is disclosed. A selected bias voltage is applied across the contacts associated with a particular detector layer/channel of the device, where ea... | 11/06/2007 |
| 7279697 | Field effect transistor with enhanced insulator structure A III-nitride based field effect transistor obtains improved performance characteristics through manipulation of the relationship between the in-plane lattice constant of the interface of material layers. A high mobility two dimensional electron gas generated at the... | 10/09/2007 |
| 7271404 | Group III-V nitride-based semiconductor substrate and method of making same A group III-V nitride-based semiconductor substrate having a group III-V nitride-based semiconductor thick film with a same composition in the entire film. The thick film has a first region with a predetermined impurity concentration and a second region with an impu... | 09/18/2007 |
| 7271429 | Nitride semiconductor device In a nitride semiconductor device according to one embodiment of the invention, a p-type gallium nitride (GaN) layer electrically connected to a source electrode and extending and projecting to a drain electrode side with respect to a gate electrode is formed on an ... | 09/18/2007 |
| 7259399 | Vertical GaN-based LED and method of manufacturing the same Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electr... | 08/21/2007 |
| 7256473 | Composite structure with high heat dissipation A composite structure is disclosed that includes a support wafer and a layered structure on the support wafer. The layered structure includes at least one layer of a monocrystalline material and at least one layer of a dielectric material. In addition, the layered s... | 08/14/2007 |
| 7250641 | Nitride semiconductor device The nitride semiconductor device according to one embodiment of the present invention comprises: a silicon substrate; a first aluminum gallium nitride (AlxGa1−xN (0≦x≦1)) layer formed as a channel layer on the silicon substrate in an isla... | 07/31/2007 |
| 7250640 | Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate A method of making a bulk crystal substrate of a GaN single crystal includes the steps of forming a molten flux of an alkali metal in a reaction vessel and causing a growth of a GaN single crystal from the molten flux, wherein the growth is continued while replenish... | 07/31/2007 |
| 7247889 | III-nitride material structures including silicon substrates III-nitride material structures including silicon substrates, as well as methods associated with the same, are described. Parasitic losses in the structures may be significantly reduced which is reflected in performance improvements. Devices (such as RF devices) for... | 07/24/2007 |
| 7244632 | Complementary metal oxide semiconductor image sensor and method for fabricating the same A complementary metal oxide semiconductor image sensor and a method for fabricating the same are disclosed, wherein a width of a depletion area of a photodiode is varied by variably applying a back bias voltage to a semiconductor substrate without using any color fi... | 07/17/2007 |
| 7242025 | Radiation emitting semiconductor component having a nitride compound semiconductor body and a contact metallization layer on its surface A radiation-emitting semiconductor component has a semiconductor body containing a nitride compound semiconductor, and a contact metallization layer disposed on a surface of the semiconductor body. In this case, the contact metallization layer is covered with a radi... | 07/10/2007 |
| 7238972 | Photodetector A photodetector is described. The photodetector is comprised of a substrate, a first n-type III-V compound semiconductor layer located on the substrate, an n++-type III-V compound semiconductor layer located on a first portion of the first n-type III-V co... | 07/03/2007 |
