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| Number | Title | Issue Date |
| 7923752 | Thin-film crystal wafer having pn junction and method for fabricating the wafer A thin-film crystal wafer having a pn junction includes a first crystal layer of p GaAs, a second crystal layer of n InxAlyGa1−x−yP, the first and second crystal layers being lattice-matched layers that form a heterojunction, and... | 04/12/2011 |
| 7638817 | Device and method for managing radiation A device and method for managing terahertz and/or microwave radiation are provided. The device can comprise one or more field effect transistors (FETs) that each include at least one channel contact to a central region of the device channel of the FET. The frequency... | 12/29/2009 |
| 7498616 | Compound semiconductor switch circuit device A gate wiring electrode is formed into a ladder-like pattern. Moreover, between source electrodes and drain electrodes in the entire Switch MMIC, the gate wiring electrodes are disposed. Furthermore, at a cross part between the gate wiring electrode and the source e... | 03/03/2009 |
| 7432491 | Pixel with spatially varying sensor positions An image sensor including a substrate, at least one metal layer, and a plurality of pixels arranged in array. Each pixel includes a sense element disposed in the substrate and at least one metal interconnect segment disposed in the at least one metal layer. The arra... | 10/07/2008 |
| 7420225 | Direct detector for terahertz radiation A direct detector for terahertz radiation comprises a grating-gated field-effect transistor with one or more quantum wells that provide a two-dimensional electron gas in the channel region. The grating gate can be a split-grating gate having at least one finger that... | 09/02/2008 |
| 7417268 | Image sensor An image sensor including a pixel assembly, each pixel including a photodiode and an access transistor connected to a read circuit, the photodiode and the access transistor being formed in and above a first semiconductor substrate, all or part of the read circuit be... | 08/26/2008 |
| 7408207 | Device manufacturing method and device, electro-optic device, and electronic equipment A device manufacturing method, including: a first process for providing the plural elements on the original substrate via a separation layer in a condition where terminal sections are exposed to a surface on an opposite side to the separation layer; a second process... | 08/05/2008 |
| 7400004 | Isolation structures for preventing photons and carriers from reaching active areas and methods of formation Regions of an integrated circuit are isolated by a structure that includes at least one isolating trench on the periphery of an active area. The trench is deep, extending at least about 0.5 μm into the substrate. The isolating structure prevents photons and electro... | 07/15/2008 |
| 7397066 | Microelectronic imagers with curved image sensors and methods for manufacturing microelectronic imagers Microelectronic imagers with curved image sensors and methods for manufacturing curved image sensors. In one embodiment, a microelectronic imager device includes an imager die having a substrate, a curved microelectronic image sensor having a face with a convex and/... | 07/08/2008 |
| 7391062 | Semiconductor structures using a group III-nitride material system with reduced phase separation and method of fabrication Group III-nitride quaternary and pentenary material systems and methods are disclosed for use in semiconductor structures, including laser diodes, transistors, and photodetectors, which reduce or eliminate phase separation and provide increased emission efficiency. ... | 06/24/2008 |
| 7385232 | CMOS imager with enhanced transfer of charge and low voltage operation and method of formation A dopant gradient region of a first conductivity type and a corresponding channel impurity gradient below a transfer gate and adjacent a charge collection region of a CMOS imager photodiode are disclosed. The channel impurity gradient in the transfer gate provides a... | 06/10/2008 |
| 7368755 | Array substrate of liquid crystal display and fabrication method thereof Provided is an array substrate of an LCD that includes a substrate, an active layer, a first insulating layer, and a gate electrode sequentially formed on the substrate. A source region and a drain region reside in predetermined regions of the active layer and each ... | 05/06/2008 |
| 7364993 | Method of enhancing the photoconductive properties of a semiconductor A semiconductor material with photoconductive properties and a method of the semiconductor, wherein a base material is grown and then annealed post-growth at a temperature of 475° C. or less. It has been found that be annealing at temperatures of 475° C., or less ... | 04/29/2008 |
| 7348609 | Thin film transistor and method of forming thin film transistor The thin film transistor has a non-transparent structure besides and insulated with the gate. Hence, the light transmitted from the substrate is blocked and the light current induced in the thin film transistor is negligible. The method uses a mask with a slit patte... | 03/25/2008 |
| 7348200 | Method of growing non-polar a-plane gallium nitride The invention provides a method of growing a non-polar a-plane gallium nitride. In the method, first, an r-plane substrate is prepared. Then, a low-temperature nitride-based nucleation layer is deposited on the substrate. Finally, the non-polar a-plane gallium nitri... | 03/25/2008 |
| 7323759 | Photosensor for a transmitted light method used for detecting the direction of movement of intensity maxima and intensity minima of an optical standing wave A photosensor for a transmitted-light method for detecting the intensity profile of an optical standing wave, with a transparent substrate, with a semiconductor component, and with at least three contacts, is characterized by the fact that two semiconductor componen... | 01/29/2008 |
| 7312484 | Pixel having an oxide layer with step region A semiconductor structure, having a doped well region being formed in a substrate layer and a transistor having a terminal provided within said doped well region. The semiconductor structure also includes an oxide layer formed over the substrate layer, the doped wel... | 12/25/2007 |
| 7304331 | Nitride semiconductor device such as transverse power FET for high frequency signal amplification or power control A nitride semiconductor device according to one embodiment of the present invention includes: a non-doped first aluminum gallium nitride (AlxGa1-xN (0≦x≦1)) layer which is formed as a channel layer; a non-doped or n type second aluminum gal... | 12/04/2007 |
| 7303455 | Method of fabricating a light emitting device including a step for cleaning the surface of an anode layer during manufacture A light emitting element has been fabricated by making a barrier having a curved surface having a radius of curvature at the upper portion or lower portion, washing a surface of an anode with a porous sponge in order to remove minute grains dotted on the surface of ... | 12/04/2007 |
| 7294873 | X-Y address type solid state image pickup device and method of producing the same In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein. and visib... | 11/13/2007 |
| 7291891 | In-solid nuclear spin quantum calculation device A voltage is applied across gate electrodes (103A) and (103B) in a two-dimensional electronic system (101) placed under a magnetic field, and the polarity of an electric current passed between ohmic electrodes (102D) and (102S) is ... | 11/06/2007 |
| 7291871 | Pixel structure A pixel structure is provided. The pixel structure comprises a scan line, a data line, a pixel electrode and a thin film transistor. The data line branches out into a plurality of subsidiary lines in the area above the scan line. If there is a short circuit between ... | 11/06/2007 |
| 7288801 | Image sensing structure A CMOS image sensing structure includes a photodiode, in which an epitaxial layer is on a P-type substrate. The photodiode includes an N-well collection node in the epitaxial layer. An isolation trench is provided around the collection node to provide better control... | 10/30/2007 |
| 7262445 | Charge transfer device and solid-state image pickup device In a charge transfer device which has many two-layered transfer electrodes, 8L disposed along a charge transfer direction X above a transfer channel is driven with two-phase driving pulses supplied to the transfer electrodes of the second layer, the transfer ... | 08/28/2007 |
| 7259110 | Manufacturing method of display device and semiconductor device It is an object of the present invention to improve the surface planarity of a film by uniforming the thickness of an insulating layer. Further, it is another object of the invention to provide a technology for manufacturing an electronic device typified by a high-d... | 08/21/2007 |
| 7244971 | Solid state image pickup device A solid state image pickup device comprising: a semiconductor substrate having a surface layer; charge storage regions disposed in the surface layer; vertical channels disposed in the surface layer adjacent to respective columns of the charge storage regions; vertic... | 07/17/2007 |
| 7227199 | Image sensor and method of manufacturing the same Disclosed is a method of manufacturing an image sensor having light sensitivity over a photodiode equal in area to that of a unit pixel. The image sensor includes an image sensor comprising: a first semiconductor substrate doped with a first conductive dopant; a fir... | 06/05/2007 |
| 7224003 | Solid-state image pickup apparatus The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag an... | 05/29/2007 |
| 7224011 | Image sensors and methods of manufacturing the same Image sensors and methods of manufacturing an image sensor are disclosed. A disclosed photo diode may receive short wavelength light in its depletion region without exhibiting defective phenomenon such as noise and dark current. In the illustrated example, this perf... | 05/29/2007 |
| 7217961 | Solid-state image pickup device and method for producing the same A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a seco... | 05/15/2007 |
| 7214971 | Semiconductor light-receiving device A semiconductor light-receiving device has a substrate including upper, middle and lower regions in its front side. A p-type layer on the lower region has a top surface including a portion on a level with the middle region. An electrode covers at least part of the b... | 05/08/2007 |
| 7211838 | Apparatus and method for manufacturing electro-optical devices The present invention provides an electro-optical device capable of achieving an increased light emission efficiency and an enhanced visibility. An organic electroluminescents (EL) display device has a plurality of material layers including a luminescent layer. In a... | 05/01/2007 |
| 7208778 | Power amplifier having high heat dissipation A power amplifier includes a substrate, a heat sink for dissipating heat, and a heterojunction bipolar transistor (HBT) disposed on the substrate. The HBT includes a collector, a base, and at least an emitter. The power amplifier further includes an emitter electrod... | 04/24/2007 |
| 7205584 | Image sensor for reduced dark current A method and structure for reducing dark current in an image sensor includes preventing unwanted electrons from being collected in the photosensitive region of the image sensor. In one embodiment, dark current is reduced by providing a deep n-type region having an n... | 04/17/2007 |
| 7199405 | Pixel cell with high storage capacitance for a CMOS imager A pixel sensor cell for use in a CMOS imager exhibiting improved storage capacitance. The source follower transistor is formed with a large gate that has an area from about 0.3 μm2 to about 10 μm2. The large size of the source follower gate e... | 04/03/2007 |
| 7199406 | Method for manufacturing transistor and image display device using the same A method for manufacturing a transistor includes forming a semiconductor layer on a substrate, a first insulation film on the semiconductor layer, and a gate electrode on the first insulation film. The method also includes forming a source region, a channel region, ... | 04/03/2007 |
| 7196365 | Solid-state imaging device, solid-state imaging apparatus and methods for manufacturing the same To arrange diffusion-inhibitory films 5a, 5b, and 5c for inhibiting the diffusion of a wiring material absent in a region on or above a light receiving unit 2, the diffusion-inhibitory films 5a, 5... | 03/27/2007 |
| 7190114 | Light emitting display device with thin film transistor having organic and inorganic insulating films A light emitting display device comprises a thin film transistor formed over a substrate, a first insulating film comprising an organic material and formed over the thin film transistor, a second insulating film comprising at least one material selected from the gro... | 03/13/2007 |
| 7161193 | Electro-optical device and electronic apparatus There is provided an electro-optical device including, above a substrate, data lines extending in a first direction, scanning lines extending in a second direction and intersecting the data lines, pixel electrodes and thin film transistors disposed so as to correspo... | 01/09/2007 |
| 7154136 | Isolation structures for preventing photons and carriers from reaching active areas and methods of formation Regions of an integrated circuit are isolated by a structure that includes at least one isolating trench on the periphery of an active area. The trench is deep, extending at least about 0.5 μm into the substrate. The isolating structure prevents photons and electro... | 12/26/2006 |
