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| Number | Title | Issue Date |
| 8378384 | Wafer and method for producing a wafer A wafer includes a wafer frontside surface and a region adjacent to the wafer frontside surface. The region includes oxygen precipitates and the wafer frontside includes a predetermined surface structure to form thereon a device with a desired property. ... | 02/19/2013 |
| 8354693 | Solid state imaging device and method for fabricating the same A solid state imaging device includes a pixel having a photoelectric conversion element formed on a semiconductor substrate. The photoelectric conversion element includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a se... | 01/15/2013 |
| 8212285 | Radiation detector The invention specifies a radiation detector for detecting radiation (8) according to a predefined spectral sensitivity distribution (9) that exhibits a maximum at a predefined wavelength λ0, comprising a semiconductor body (1) with ... | 07/03/2012 |
| 7834379 | Avalanche photodiode with edge breakdown suppression The invention relates to an avalanche photodiode having enhanced gain uniformity enabled by a tailored diffused p-n junction profile. The tailoring is achieved by a two stage doping process incorporating a solid source diffusion in combination with conventional gas ... | 11/16/2010 |
| 7759698 | Photo-field effect transistor and integrated photodetector using the same A photo-FET based on a compound semiconductor including a channel layer formed on a substrate constituting a current path between source and drain electrodes, serving as part of a photodiode and a photosensitive region. A back-gate layer that serving as a substrate-... | 07/20/2010 |
| 7504672 | Separate absorption and detection diode A photodiode for detection of preferably infrared radiation wherein photons are absorbed in one region and detected in another. In one example embodiment, an absorbing P region is abutted with an N region of lower doping such that the depletion region is substantial... | 03/17/2009 |
| 7397066 | Microelectronic imagers with curved image sensors and methods for manufacturing microelectronic imagers Microelectronic imagers with curved image sensors and methods for manufacturing curved image sensors. In one embodiment, a microelectronic imager device includes an imager die having a substrate, a curved microelectronic image sensor having a face with a convex and/... | 07/08/2008 |
| 7372068 | QWIP with electron launcher for reducing dielectric relaxation effect in low background conditions A QWIP structure is disclosed that includes a graded emitter barrier and can further be configured with a blocked superlattice miniband. The graded emitter barrier effectively operates to launch dark electrons into the active quantum well region, thereby improving r... | 05/13/2008 |
| 7368762 | Heterojunction photodiode The present invention provides a heterojunction photodiode which includes a pn or Schottky-barrier junction formed in a first material region having a bandgap energy Eg1. When reverse-biased, the junction creates a depletion region which expands towards a... | 05/06/2008 |
| 7365356 | Photocathode The invention relates to a photocathode having a structure that permits a decrease in the radiant sensitivity at low temperatures is suppressed so that the S/N ratio is improved. In the photocathode, a light absorbing layer is formed on the upper layer of a substrat... | 04/29/2008 |
| 7348608 | Planar avalanche photodiode A planar avalanche photodiode includes a small localized contact layer on the top of the device produced by either a diffusion or etching process and a semiconductor layer defining a lower contact area. A semiconductor multiplication layer is positioned between the ... | 03/25/2008 |
| 7348607 | Planar avalanche photodiode The present invention includes a planar avalanche photodiode having a first n-type semiconductor layer defining a planar contact area, and a second n-type semiconductor layer having a p-type diffusion region. Further features of the structure includes an n-type semi... | 03/25/2008 |
| 7323731 | Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite ... | 01/29/2008 |
| 7313034 | Low supply voltage temperature compensated reference voltage generator and method A reference voltage generator uses a conventional forward junction voltage generating device and a conventional thermal generator to generate a thermal voltage. The forward junction voltage and the thermal voltages have respective thermal sensitivities that act oppo... | 12/25/2007 |
| 7250667 | Selectable open circuit and anti-fuse element An integrated circuit is provided with a semiconductor substrate that is doped with a set concentration of an oxidizable dopant of a type that segregates to the top surface of a silicide when the semiconductor substrate is reacted to form such a silicide. A gate die... | 07/31/2007 |
| 7238972 | Photodetector A photodetector is described. The photodetector is comprised of a substrate, a first n-type III-V compound semiconductor layer located on the substrate, an n++-type III-V compound semiconductor layer located on a first portion of the first n-type III-V co... | 07/03/2007 |
| 7235835 | Semiconductor device and its manufacturing method, and electronic device The present invention proposes a semiconductor device, its manufacturing method and to an electronic apparatus thereof equipped with the semiconductor device where it becomes possible to make a CMOS type solid-state imaging device, an imager area formed with a MOS t... | 06/26/2007 |
| 7217982 | Photodiode having voltage tunable spectral response A photodetector (10) includes a substrate (12) having a surface; a first layer (14) of semiconductor material that is disposed above the surface, the first layer containing a first dopant at a first concentration for having a first type of elect... | 05/15/2007 |
| 7214971 | Semiconductor light-receiving device A semiconductor light-receiving device has a substrate including upper, middle and lower regions in its front side. A p-type layer on the lower region has a top surface including a portion on a level with the middle region. An electrode covers at least part of the b... | 05/08/2007 |
| 7205563 | QWIP with electron launcher for reducing dielectric relaxation effect in low background conditions A QWIP structure is disclosed that includes a graded emitter barrier and can further be configured with a blocked superlattice miniband. The graded emitter barrier effectively operates to launch dark electrons into the active quantum well region, thereby improving r... | 04/17/2007 |
| 7202511 | Near-infrared visible light photon counter Electromagnetic energy is detected with high efficiency in the spectral range having wavelengths of about 1–2 microns by coupling an absorber layer having high quantum efficiency in the spectral range having wavelengths of about 1–2 microns to an intrinsic semic... | 04/10/2007 |
| 7202102 | Doped absorption for enhanced responsivity for high speed photodiodes A photodiode with a semiconductor intrinsic light absorption layer has at least one p-doped light absorption layer or an n-doped light absorption layer, and preferably both. The diode also has a cathode electrode and an anode electrode electrically coupled with the ... | 04/10/2007 |
| 7196390 | Solid state image wavelength converter A method for encoding information that is encoded in spatial variations of the intensity of light (24) of a first wave-length into light of a second wavelength, the method comprising: generating a first density distribution of electrons homologous with the sp... | 03/27/2007 |
| 7173274 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe bas... | 02/06/2007 |
| 7170105 | Type II interband heterostructure backward diodes A semiconductor device exhibiting interband tunneling with a first layer with a first conduction band edge with an energy above a first valence band edge, with the difference a first band-gap. A second layer with second conduction band edge with an energy above a se... | 01/30/2007 |
| 7161170 | Doped-absorber graded transition enhanced multiplication avalanche photodetector An InGaAs/InAlAs-based avalanche photodetector provides high gain and high bandwidth over a range of operating biases. A graded transition region alleviates the barrier to electron transport from the absorption region to the multiplication region when an operating b... | 01/09/2007 |
| 7157314 | Vertically stacked field programmable nonvolatile memory and method of fabrication A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus ... | 01/02/2007 |
| 7151305 | Photoelectric conversion device, and image sensor and image input system making use of the same In a photoelectric conversion device including a first-conductivity type first semiconductor region located in a pixel region, a second-conductivity type second semiconductor region provided in the first semiconductor region, and a wiring for electrically connecting... | 12/19/2006 |
| 7135420 | Semiconductor device and manufacturing method thereof Single crystal silicon is grown in a [100] direction to make a bulk. Next, a silicon substrate with a normal of a surface extending in an inclined direction from a [100] direction is cut from the bulk. At this time, when an angle (off-angle) of inclination of the no... | 11/14/2006 |
| 7121743 | Optical module The optical module includes a housing, an optical subassembly, a support and a thermal sheet. The housing has a base and a cover. The support having two leg portions and a bridge connecting these leg portions is placed on the bottom surface of the base. The optical ... | 10/17/2006 |
| 7115925 | Image sensor and pixel having an optimized floating diffusion An active pixel includes a a photosensitive element formed in a semiconductor substrate. A transfer transistor is formed between the photosensitive element and a floating diffusion and selectively operative to transfer a signal from the photosensitive element to the... | 10/03/2006 |
| 7116588 | Low supply voltage temperature compensated reference voltage generator and method A reference voltage generator uses a conventional forward junction voltage generating device and a conventional thermal generator to generate a thermal voltage. The forward junction voltage and the thermal voltages have respective thermal sensitivities that act oppo... | 10/03/2006 |
| 7109488 | Multi-color infrared imaging device A multi-color IR imaging device includes optics that direct mid-wave infrared (MWIR) and long-wave infrared (LWIR) radiation onto a focal plane array having LWIR and MWIR detection layers. Pixel groups that include at least one first pixel and one second pixel are d... | 09/19/2006 |
| 7105906 | Photodiode that reduces the effects of surface recombination sites The loss of photogenerated electrons to surface electron-hole recombination sites is minimized by utilizing a first p-type surface region to form a depletion region that functions as a first barrier that repels photogenerated electrons from the surface recombination... | 09/12/2006 |
| 7102185 | Lightshield architecture for interline transfer image sensors An interline transfer type image sensing device that can be operated at high speed and with low image smear is described. The device incorporates a refractory metal layer which is used for both a light shield over the vertical charge transfer region and as a wiring ... | 09/05/2006 |
| 7091536 | Isolation process and structure for CMOS imagers A barrier implanted region of a first conductivity type located below an isolation region of a pixel sensor cell and spaced from a doped region of a second conductivity type of a photodiode of the pixel sensor cell is disclosed. The barrier implanted region is forme... | 08/15/2006 |
| 7091529 | Three-dimensional memory array and method of fabrication A multi-level memory array is described employing rail-stacks. The rail-stacks include a conductor and semiconductor layers. The rail-stacks are generally separated by an insulating layer used to form antifuses. In one embodiment, one-half the diode is located in on... | 08/15/2006 |
| 7078741 | Enhanced photodetector The present invention includes a photodiode having a first p-type semiconductor layer and an n-type semiconductor layer coupled by a second p-type semiconductor layer. The second p-type semiconductor layer has graded doping along the path of the carriers. In particu... | 07/18/2006 |
| 7071020 | Method of forming an elevated photodiode in an image sensor The invention provides an elevated photodiode for image sensors and methods of formation of the photodiode. Elevated photodiodes permit a decrease in size requirements for pixel sensor cells while reducing leakage, image lag and barrier problems typically associated... | 07/04/2006 |
| 7064399 | Advanced CMOS using super steep retrograde wells The present invention is a method for forming super steep doping profiles in MOS transistor structures. The method comprises forming a carbon containing layer (110) beneath the gate dielectric (50) and source and drain regions (80) of a MOS tran... | 06/20/2006 |
