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| Number | Title | Issue Date |
| 8188512 | Growth of germanium epitaxial thin film with negative photoconductance characteristics and photodiode using the same A method of growing a germanium (Ge) epitaxial thin film having negative photoconductance characteristics and a photodiode using the same are provided. The method of growing the germanium (Ge) epitaxial thin film includes growing a germanium (Ge) thin film on a sili... | 05/29/2012 |
| 8134179 | Photodiode with a reduced dark current and method for the production thereof A photodiode in which a pn junction is formed between the doped region (DG) formed in the surface of a crystalline semiconductor substrate and a semiconductor layer (HS) deposited above said doped region. An additional doping (GD) is provided in the edge region of t... | 03/13/2012 |
| 8120060 | Monolithically integrated silicon and III-V electronics Methods and structures for monolithically integrating monocrystalline silicon and monocrystalline non-silicon materials and devices are provided. In one structure, a monolithically integrated semiconductor device structure comprises a silicon substrate and a first m... | 02/21/2012 |
| 8120061 | Light receiving device A light receiving device having small dark current and capable of sensing light in the wavelength range of 2.0 μm to 3.0 μm with high sensitivity is provided. The light receiving device has an InP substrate, and a light receiving layer formed by alternately stacki... | 02/21/2012 |
| 8120062 | Complementary metal oxide semiconductor image sensor and method for fabricating the same A complementary metal oxide semiconductor (CMOS) device and a method for fabricating the same are provided. The CMOS image sensor includes: a first conductive type substrate including a trench; a channel stop layer formed by using a first conductive type epitaxial l... | 02/21/2012 |
| 8115232 | Three-dimensional bicontinuous heterostructures, a method of making them, and their application in quantum dot-polymer nanocomposite photodetectors and photovoltaics The present invention provides of a three-dimensional bicontinuous heterostructure, a method of producing same, and the application of this structure towards the realization of photodetecting and photovoltaic devices working in the visible and the near-infrared. The... | 02/14/2012 |
| 8106421 | Photovoltaic devices Implementations of quantum well photovoltaic devices are provided. In one embodiment, a photovoltaic device includes an active layer that includes a first barrier layer, a well layer located on the first barrier layer and made of a nitride semiconductor, and a secon... | 01/31/2012 |
| 8101971 | Multicolor photodiode array and method of manufacturing Novel structures of the photodetector having broad spectral ranges detection capability are provided. The photodetector offers high quantum efficiency>95% over wide spectral ranges, high frequency response>10 GHz (@3 dB). The photodiode array of N×N (or M×N) eleme... | 01/24/2012 |
| 8076697 | Solid-state imaging device, method of driving same, and camera apparatus A solid-state imaging device of a three-transistor pixel configuration having no selection transistor has a problem of a non-selection hot carrier white point, which is specific to this apparatus. A bias current during a non-reading period of pixels is made to flow ... | 12/13/2011 |
| 8017976 | Barrier for doped molybdenum targets A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium seleni... | 09/13/2011 |
| 7989842 | Method and apparatus for heterojunction barrier diode detector for ultrahigh sensitivity The disclosure relates to a zero-bias heterojunction diode detector with varying impedance. The detector includes a substrate supporting a Schottky structure and an Ohmic contact layer. A metallic contact layer is formed over the Ohmic layer. The Schottky structure ... | 08/02/2011 |
| 7943962 | Solid-state image pickup device and method for producing the same A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a seco... | 05/17/2011 |
| 7928471 | Group III-nitride growth on silicon or silicon germanium substrates and method and devices therefor A structure including a Si1-xGex substrate and a distributed Bragg reflector layer disposed directly onto the substrate. The distributed Bragg reflector layer includes a repeating pattern that includes at least one aluminum nitride layer and a ... | 04/19/2011 |
| 7915639 | InGaAsSbN photodiode arrays Embodiments of detectors made using lattice matched photoabsorbing layers are disclosed. A photodiode apparatus in accordance with one or more embodiments of the present invention comprises an indium phosphide substrate, and a photoabsorbing region comprising at lea... | 03/29/2011 |
| 7910954 | Image sensor element and image sensor An image sensor element is provided according to an embodiment which comprises image sensor element portions sensitive to at least partially different wavelength ranges. ... | 03/22/2011 |
| 7910953 | Optical semiconductor device An optical semiconductor device includes a distributed Bragg reflection layer of a first conductivity type, a distortion elaxation layer of the first conductivity type, a light absorbing layer, and a semiconductor layer of a second conductivity type, sequentially ar... | 03/22/2011 |
| 7906797 | Organic material photodiode The present invention relates to a photodiode including a photo-active layer, which layer includes at least one electron donating material, and at least one fullerene derivative as an electron accepting material. The present invention further relates to a method for... | 03/15/2011 |
| 7898000 | Solid-state image pickup device and method for producing the same A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a seco... | 03/01/2011 |
| 7884392 | Image sensor having through via One embodiment exemplarily described herein can be characterized as an image sensor including a substrate having a front surface and a rear surface; a photoelectric converting portion on the front surface of the substrate; a through via extending through the substra... | 02/08/2011 |
| 7884391 | Image sensor and method for manufacturing the same Embodiments relate to an image sensor. According to embodiments, an image sensor may include a metal interconnection, readout circuitry, a first substrate, a metal layer, and an image sensing device. The metal interconnection and the readout circuitry may be formed ... | 02/08/2011 |
| 7880196 | Image sensor and method for manufacturing the same Embodiments relate to an image sensor and a method of forming an image sensor. According to embodiments, an image sensor may include a first substrate and a photodiode. A circuitry including a metal interconnection may be formed on and/or over the first substrate. T... | 02/01/2011 |
| 7855400 | Semiconductor light detecting element and method for manufacturing the semiconductor light detecting element A semiconductor light detecting element having a mesa structure comprises: a first semiconductor layer having n-type conductivity located on a semiconductor substrate, a light absorbing layer located on the first semiconductor layer, and a second semiconductor layer... | 12/21/2010 |
| 7786508 | High operating temperature split-off band infrared detectors Systems and methods for at or near room temperature of infrared detection are disclosed. Embodiments of the disclosure include high temperature split-off band infrared detectors. One embodiment, among others, comprises a first barrier and a second barrier with an em... | 08/31/2010 |
| 7781798 | Solid-state image pickup device and fabrication method therefor Disclosed herein is a solid-state image pickup device, including, a light receiving pixel section, a black level reference pixel section, a multi-layer wiring line section, a first light blocking film, a second light blocking film, a third light blocking film, and a... | 08/24/2010 |
| 7772615 | Anti stark electrooptic medium and electrooptically modulated optoelectronic device based thereupon Semiconductor electrooptic medium shows behavior different from a medium based on quantum confined Stark Effect. A preferred embodiment has a type-II heterojunction, selected such, that, in zero electric field, an electron and a hole are localized on the opposite si... | 08/10/2010 |
| 7763909 | Image sensor and method for manufacturing the same An image sensor and method for manufacturing the same are provided. The image sensor can include an isolation area and active area on a substrate; a photodiode area and a transistor area provided on the active area; a gate insulating layer on the transistor area; an... | 07/27/2010 |
| 7750366 | Solid-state imaging element and method for manufacturing the same A solid-state imaging element includes a layered substrate made of silicon and composed of, for example, an N-type substrate, a P-type layer, and an N-type layer. In the layered substrate, an imaging region in which a plurality of pixels are arranged and a periphera... | 07/06/2010 |
| 7728351 | Image sensor and method for manufacturing the same An image sensor provides enhanced integration of transistor circuitry and photo diodes. The image sensor simultaneously improves resolution and sensitivity. An image sensor an a method for manufacturing prevents defects in a photo diode by adopting a vertical photo ... | 06/01/2010 |
| 7719028 | Semiconductor light-receiving device and manufacturing method thereof A semiconductor light-receiving device and its manufacturing method are provided which are capable of suppressing dark current and deterioration. Semiconductor crystals were sequentially grown over an n-type InP substrate, including an n-type InP buffer layer, an un... | 05/18/2010 |
| 7705370 | Monolithically integrated photodetectors Methods and structures for monolithically integrating monocrystalline silicon and monocrystalline non-silicon materials and devices are provided. In one structure, a monolithically integrated semiconductor device structure comprises a silicon substrate and a first m... | 04/27/2010 |
| 7692212 | Transistor with InGaAsP collector region and integrated opto-electronic devices employing same A double heterojunction bipolar transistor on a substrate comprises a collector formed of InGaAsP, a base in contact with the collector, an emitter in contact with the base, and electrodes forming separate electrical contacts with each of the collector, base, and em... | 04/06/2010 |
| 7663160 | Monolithic photodetector A photodetector including a photodiode formed in a semiconductor substrate and a waveguide element formed of a block of a high-index material extending above the photodiode in a thick layer of a dielectric superposed to the substrate, the thick layer being at least ... | 02/16/2010 |
| 7655961 | Organic diodes and materials Diodes having p-type and n-type regions in contact, having at least one of either the p-type region or n-type region including a conjugated organic material doped with an immobile dopant, conjugated organic materials for incorporation into such diodes, and methods o... | 02/02/2010 |
| 7652309 | Solid state imaging module A CCD solid state imaging module comprises a CCD area sensor, a substrate bias voltage setting device formed on said CCD area sensor for outputting a voltage, and a substrate bias voltage outputting device formed on a chip other than said CCD area sensor for outputt... | 01/26/2010 |
| 7615803 | Method for manufacturing transistor and image display device using the same A method for manufacturing a transistor includes forming a semiconductor layer on a substrate, a first insulation film on the semiconductor layer, and a gate electrode on the first insulation film. The method also includes forming a source region, a channel region, ... | 11/10/2009 |
| 7601992 | Light detecting element and control method of light detecting element A light detecting element 1 including an element formation layer 22 which contains a well region 31. A surface electrode 25 is formed on the layer 22 through an insulating layer 24. The region 31 contains an electron ... | 10/13/2009 |
| 7592645 | Photoelectric conversion device and method for producing photoelectric conversion device A photoelectric conversion device according to the present invention has a plurality of photoreceiving portions provided in a substrate, an interlayer film overlying the photoreceiving portion, a large refractive index region which is provided so as to correspond to... | 09/22/2009 |
| 7592644 | X-Y address type solid state image pickup device and method of producing the same In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein, and visib... | 09/22/2009 |
| 7579633 | Photoelectric conversion device, image sensor, and method for manufacturing photoelectric conversion device A photoelectric conversion device includes a photoelectric conversion layer that is stacked on a semiconductor substrate and that has first, second, and third photoelectric conversion regions, and first, second, and third dividing regions. The first dividing region ... | 08/25/2009 |
| 7576371 | Structures and methods to improve the crosstalk between adjacent pixels of back-illuminated photodiode arrays Structures and methods to improve the crosstalk between adjacent pixels of back-illuminated photodiode arrays on a substrate having first and second surfaces, including providing a first matrix of regions of a first conductivity type of a higher conductivity than th... | 08/18/2009 |
