Did You Know...
...that two musicians were responsible for the invention of color print film? Fascinated by photography, Leopold Godowsky and Leopold Mannes worked together to produce an easy-to-use, practical color film. They worked full time as music teachers and gave concerts while experimenting during their off hours in Mannes' kitchen. Their success earned them full-time, well-paying jobs at Kodak and their efforts resulted in Kodachrome film, which was introduced in 1935.
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| Number | Title | Issue Date |
| 7851822 | Full frame ITO pixel with improved optical symmetry A charge-coupled device includes a photosensitive region for collecting charge in response to incident light; a first and third gate electrode made of a transmissive material spanning at least a portion of the photosensitive region; and a second gate electrode made ... | 12/14/2010 |
| 7446349 | Two-branch outputting solid-state imaging device and imaging apparatus A two-branch outputting solid-state imaging device is provided and includes: two output amplifiers including a first output amplifier and a second output amplifier, each outputting a voltage signal in accordance with the signal charge transferred toward the output e... | 11/04/2008 |
| 7432539 | Imaging method utilizing thyristor-based pixel elements An improved imaging array (and corresponding method of operation) includes a plurality of heterojunction thyristor-based pixel elements disposed within resonant cavities formed on a substrate. Each thyristor-based pixel element includes complementary n-type and p-ty... | 10/07/2008 |
| 7354782 | Group III nitride based flip-chip integrated circuit and method for fabricating A flip-chip integrated circuit and method for fabricating the integrated circuit are disclosed. A method according to the invention comprises forming a plurality of active semiconductor devices on a wafer and separating the active semiconductor devices. Passive comp... | 04/08/2008 |
| 7342169 | Phonon-blocking, electron-transmitting low-dimensional structures A thermoelectric structure and device including at least first and second material systems having different lattice constants and interposed in contact with each other, and a physical interface at which the at least first and second material systems are joined with ... | 03/11/2008 |
| 7333733 | Optoelectronic clock generator producing high frequency optoelectronic pulse trains with variable frequency and variable duty cycle and low jitter An optoelectronic pulse generator is provided that includes a thyristor detector/emitter device having an input port and an output port. The thyristor detector/emitter device is adapted to detect an input optical pulse supplied to the input port and to produce an ou... | 02/19/2008 |
| 7332752 | Optoelectronic circuit employing a heterojunction thyristor device to convert a digital optical signal to a digital electrical signal An optoelectronic circuit includes a resonant cavity formed on a substrate and into which is injected an input digital optical signal that encodes bits of information (each bit representing an OFF logic level or an ON logic level). A heterojunction thyristor device,... | 02/19/2008 |
| 7328490 | Method for manufacturing a liquid jetting head A method for manufacturing a liquid jetting head includes manufacturing a piezoelectric element having consistently high piezoelectric characteristics that obtains a degree of orientation that is suitable for a piezoelectric thin film, that is stable, and that has g... | 02/12/2008 |
| 7329896 | Polymerizable charge transport compounds The invention relates to polymerizable charge transport compounds, their use as semiconductors or charge transport materials, in optical, electrooptical or electronic devices like for example organic field effect transistors (FET or OFET) for thin film transistor li... | 02/12/2008 |
| 7317214 | Amplifying solid-state image pickup device An amplifying solid-state image pickup device includes photoelectric conversion transfer parts respectively composed of a photodiode and a transfer transistor, and a switched capacitor amplification part provided for every k (k: natural number) photoelectric convers... | 01/08/2008 |
| 7309876 | Organic semiconductor having polymeric and nonpolymeric constituents A composition, comprising organic polymer molecules, and organic nonpolymeric molecules, wherein the composition is a semiconducting solid. The composition includes a distribution of crystal domains of the polymer molecules and inter-domain regions between the cryst... | 12/18/2007 |
| 7279697 | Field effect transistor with enhanced insulator structure A III-nitride based field effect transistor obtains improved performance characteristics through manipulation of the relationship between the in-plane lattice constant of the interface of material layers. A high mobility two dimensional electron gas generated at the... | 10/09/2007 |
| 7271416 | Strain compensated semiconductor structures Semiconductor structure and method of fabricating a semiconductor structure are provided that include a substrate having a first in-plane unstrained lattice constant, a first layer comprising a first semiconductor material on the substrate and having a second in-pla... | 09/18/2007 |
| 7253109 | Method of depositing a tantalum nitride/tantalum diffusion barrier layer system We have discovered a method of providing a thin, approximately from about 2 Å to about 100 Å thick TaN seed layer, which can be used to induce the formation of alpha tantalum when tantalum is deposited over the TaN seed layer. Further, the ... | 08/07/2007 |
| 7247892 | Imaging array utilizing thyristor-based pixel elements An improved imaging array (and corresponding method of operation) includes a plurality of heterojunction thyristor-based pixel elements disposed within resonant cavities formed on a substrate. Each thyristor-based pixel element includes complementary n-type and p-ty... | 07/24/2007 |
| 7233028 | Gallium nitride material devices and methods of forming the same The invention provides gallium nitride material devices, structures and methods of forming the same. The devices include a gallium nitride material formed over a substrate, such as silicon. Exemplary devices include light emitting devices (e.g., LED's, lasers), ligh... | 06/19/2007 |
| 7230284 | Insulating gate AlGaN/GaN HEMT AlGaN/GaN HEMTs are disclosed having a thin AlGaN layer to reduce trapping and also having additional layers to reduce gate leakage and increase the maximum drive current. One HEMT according to the present invention comprises a high resistivity semiconductor layer w... | 06/12/2007 |
| 7170111 | Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same A nitride-based field effect transistor includes a substrate, a channel layer comprising InAlGaN formed on the substrate, source and drain ohmic contacts in electrical communication with the channel layer, and a gate contact formed on the channel layer. At least one... | 01/30/2007 |
| 7142784 | Microprocessor-based optical signal conditioner An optical device for conditioning a multi-channel optical signal is provided, comprising a channel separation and assembly unit and a signal processor. The signal processor comprises an optical attenuator for adjusting the power level of the signals, an optical det... | 11/28/2006 |
| 7126426 | Cascode amplifier structures including wide bandgap field effect transistor with field plates A multi-stage amplifier circuit arranged to take advantage of the desirable characteristics of non-field-plate and field plate transistors when amplifying a signal. One embodiment of a multi-stage amplifier according to the present invention comprises a non-field-pl... | 10/24/2006 |
| 7112830 | Super lattice modification of overlying transistor The invention provides a device having a substrate, a buffer region positioned upon the substrate, wherein the buffer region has an upper buffer region and a lower buffer region, a heterojunction region positioned upon the buffer region, and a superlattice positione... | 09/26/2006 |
| 7054192 | Method of controlling threshold voltage of NROM cell A method of two-sided asymmetric programming with a one-sided read for a Nitride Read Only Memory (NROM) cell with different quantity of stored charges uses the different interaction of the two bits to control the operation window of the threshold voltage. Due to th... | 05/30/2006 |
| 7030428 | Strain balanced nitride heterojunction transistors A nitride based heterojunction transistor includes a substrate and a first Group III nitride layer, such as an AlGaN based layer, on the substrate. The first Group III-nitride based layer has an associated first strain. A second Group III-nitride based layer, such a... | 04/18/2006 |
| 7015120 | Method of fabricating semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation A method of fabricating a semiconductor device includes the steps of forming (or providing) a series of layers formed on a substrate, the layers including a first plurality of layers including an n-type ohmic contact layer, a p-type modulation doped quantum well str... | 03/21/2006 |
| 7012274 | Modulation doped thyristor and complementary transistors combination for a monolithic optoelectronic integrated circuit A thyristor and family of high speed transistors and optoelectronic devices are obtained on a monolithic substrate (149) with an epitaxial layer structure comprised of two modulation doped transistor structures inverted with respect to each other. The transis... | 03/14/2006 |
| 6996150 | Semiconductor light emitting device and manufacturing method therefor A semiconductor light emitting device of double hetero junction includes an active layer and clad layers. The clad layers include an n-type layer and p-type layer. The clad layers sandwich the active layer. A band gap energy of the clad layers is larger than that of... | 02/07/2006 |
| 6995407 | Photonic digital-to-analog converter employing a plurality of heterojunction thyristor devices A photonic digital-to-analog converter employing a plurality of heterojunction thyristor devices that are configured to convert a digital word encoded by a parallel digital optical signal (e.g., a plurality of synchronous optical bits) to an output analog electrical... | 02/07/2006 |
| 6992341 | Amplifying solid-state image pickup device There is provided an amplifying solid-state image pickup device capable of improving S/N and maintaining a charge-voltage conversion efficiency high. In the amplifying solid-state image pickup device, signal charges of a plurality of photodiodes 1 are added u... | 01/31/2006 |
| 6977954 | Semiconductor laser array device employing modulation doped quantum well structures An optoelectronic integrated circuit comprises a substrate, a multilayer structure formed on the substrate, and an array of thyristor devices and corresponding resonant cavities formed in the multilayer structure. The resonant cavities, which are adapted to process ... | 12/20/2005 |
| 6974969 | P-type quantum-well-base bipolar transistor device employing interdigitated base and emitter formed with a capping layer A high performance bipolar transistor device is realized from a series of layers formed on a substrate, the series of layers including a first set of one or more layers each comprising n-type dopant material, a second set of layers forming a p-type modulation doped ... | 12/13/2005 |
| 6954473 | Optoelectronic device employing at least one semiconductor heterojunction thyristor for producing variable electrical/optical delay An optoelectronic integrated circuit includes a resonant cavity formed on a substrate. A heterojunction thyristor device is formed in the resonant cavity and operates to detect an input optical pulse (or input electrical pulse) and produce an output optical pulse vi... | 10/11/2005 |
| 6936839 | Monolithic integrated circuit including a waveguide and quantum well inversion channel devices and a method of fabricating same A family of optical waveguide structures and high speed optoelectronic/transistor devices are obtained from a multilayer structure that includes a modulation doped quantum well structure formed over a DBR mirror. The optical waveguide structure is realized by implan... | 08/30/2005 |
| 6933181 | Method for fabricating semiconductor device In a method for fabricating a semiconductor device, a first semiconductor layer of aluminum gallium nitride is first formed on a substrate, and a protection film containing silicon is then formed on the first semiconductor layer in such a manner that a device-isolat... | 08/23/2005 |
| 6929987 | Microelectronic device fabrication method In a method of forming a semiconductor device with a first channel layer formed over a portion of a second channel layer, a portion of the second channel underlying the first channel is etched so as to form an overhanging ledge in the first channel, and then a metal... | 08/16/2005 |
| 6917061 | AlGaAs or InGaP low turn-on voltage GaAs-based heterojunction bipolar transistor A heterojunction bipolar transistor is provided that has a reduced turn-on voltage threshold. A base spacer layer is provided and alternately an emitter layer is provided that has a lowered energy gap. The lowered energy gap of the base spacer or the emitter spacer ... | 07/12/2005 |
| 6911124 | Method of depositing a TaN seed layer We have discovered a method of providing a thin approximately from about 20 Å to about 100 Å thick TaN seed layer, which can be used to induce the formation of alpha tantalum when tantalum is deposited over the TaN seed layer. Further, the ... | 06/28/2005 |
| 6870207 | III-V charge coupled device suitable for visible, near and far infra-red detection A photon detector is obtained by using the intersubband absorption mechanism in a modulation doped quantum well(s). The modulation doping creates a very high electric field in the well which enables absorption of input TE polarized light and also conducts the carrie... | 03/22/2005 |
| 6828601 | Charge transfer apparatus To transfer signal charges at high speed with small noise, there is provided a charge transfer apparatus including a semiconductor substrate of one conductivity type, a charge transfer region of a conductivity type opposite to that of the semiconductor substrate tha... | 12/07/2004 |
| 6670657 | Integrated circuit having photodiode device and associated fabrication process An integrated circuit is provided that includes a substrate incorporating a semiconductor photodiode device having a p-n junction. The photodiode device includes at least one capacitive trench buried in the substrate and connected in parallel with the jun... | 12/30/2003 |
| 6566694 | Heterojunction bipolar transferred electron tetrode A heterojunction bipolar transferred electron tetrode has an anode region providing a first terminal, an active region in which Gunn-Hilsum oscillations are generated, a base region providing a second terminal, a cathode region providing a third terminal,... | 05/20/2003 |
