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...During the Civil War, the Confederacy established its own Patent Office which issued 266 patents, a third of which concerned implements of war.
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| Number | Title | Issue Date |
| 7256431 | Insulating substrate and semiconductor device having a thermally sprayed circuit pattern An insulating substrate includes a metal base as a base member, an insulating layer which is a room temperature, aerosol deposited shock solidification film formed on the metal base, and a circuit pattern which is a cold sprayed thermal spray coating formed on the i... | 08/14/2007 |
| 7192868 | Method of obtaining release-standing micro structures and devices by selective etch removal of protective and sacrificial layer using the same A method of patterning and releasing chemically sensitive low k films without the complication of a permanent hardmask stack, yielding an unaltered free-standing structure is provided. The method includes providing a structure including a Si-containing substrate hav... | 03/20/2007 |
| 7186664 | Methods and structures for metal interconnections in integrated circuits A typical integrated-circuit fabrication requires interconnecting millions of microscopic transistors and resistors with metal wires. Making the metal wires flush, or coplanar, with underlying insulation requires digging trenches in the insulation, and then filling ... | 03/06/2007 |
| 7164193 | Optical semiconductor apparatus An optical semiconductor apparatus has an eyelet having a through hole, an insulating member provided in the through hole, a semiconductor optical element, and a submount on which the semiconductor optical element is mounted. The insulating member supports a plurali... | 01/16/2007 |
| 7132698 | Compression assembled electronic package having a plastic molded insulation ring A compression assembled semiconductor package for housing a power semiconductor die which includes two major pole pieces in intimate electrical contact with respective major electrodes of a power semiconductor die. The package includes a plastic molded insulation ri... | 11/07/2006 |
| 6995409 | Module for high voltage power for converting a base of IGBT components This power switching cell comprises: at least two power components (4–6) forming a chain (2) of components electrically linked in series by way of at least one intermediate bond (52, 70), and | 02/07/2006 |
| 6979843 | Power semiconductor device A power semiconductor device that uses a lead frame for making connection to a semiconductor device and has a structure less subject to fatigue failure at the connection part of the lead frame. A mold resin of a casing (14) is used for integrally covering the... | 12/27/2005 |
| 6924985 | Method of waterproofing power circuit section and power module having power circuit section A power module includes a heat radiating member, a power circuit section, a resin layer, and a case. The heat radiating member includes a circuit disposition surface. The power circuit section includes an external connection terminal and is disposed on the circuit d... | 08/02/2005 |
| 6914325 | Power semiconductor module A power semiconductor module has a circuit assembly body, which includes a metal base, a ceramic substrate, and a power semiconductor chip, and is combined with a package having terminals formed integrally. The ceramic substrate of the module has a structure such th... | 07/05/2005 |
| 6696709 | Low voltage protection module A semiconductor thyristor device incorporates buried regions to achieve low breakover voltage devices, and the buried regions are offset laterally with respect to the emitter regions. The low voltage thyristor devices can be incorporated into five-pin pro... | 02/24/2004 |
| 6686658 | Semiconductor device, including an arrangement to provide a uniform press contact and converter using same In accordance with a press contact type semiconductor device, a metallic body having macroscopic vacancies inside is arranged between a main electrode of the semiconductor device and a main electrode plate, or between an intermediate electrode plate arran... | 02/03/2004 |
| 6605870 | Pressure-contact type semiconductor device A pressure-contact type semiconductor device comprises a plurality of semiconductor elements (IGBTs) which are in pressure contact with one another, and in which first main electrodes are electrically connected to a first common main power source plate (p... | 08/12/2003 |
| 6495924 | Semiconductor device, including an arrangement to provide a uniform press contact and converter using same In accordance with a press contact type semiconductor device, a metallic body having macroscopic vacancies inside is arranged between a main electrode of the semiconductor device and a main electrode plate, or between an intermediate electrode plate arran... | 12/17/2002 |
| 6445013 | Gate commutated turn-off semiconductor device A first cathode flange (14) provided with branch-like protrusions (14d) extending towards substantially its outer periphery and a gate flange (15) provided with branch-like protrusions (15c) extending towards substantially its outer periphery are connecte... | 09/03/2002 |
| 6369411 | Semiconductor device for controlling high-power electricity with improved heat dissipation A semiconductor device including (a) a base plate, (b) an insulation substrate including of an insulator plate with a front electrode and a back electrode bonded thereon and fixed onto the base plate by the back electrode, (c) a semiconductor element fast... | 04/09/2002 |
| 6323547 | Pressure contact type semiconductor device with ringshaped gate terminal In a GCT device which controls large current at the operating frequency of 1 kHz or more, a ring-shaped gate terminal (10) is made of a magnetic material with the maximum permeability of 15,000 or less in the CGS Gaussian system of units. Further, in the ... | 11/27/2001 |
| 6166402 | Pressure-contact type semiconductor element and power converter thereof A double circular gate conductor 9 comprises a first circular gate conductor 7 connected to a gate electrode 2a, a second circular gate conductor 8, and a connecting conductor which connects the first circular gate conductor 7 and the second circular gate... | 12/26/2000 |
| 6081039 | Pressure assembled motor cube A pressure assembled power module is provided with first and second die, the first and second die being stacked atop one another and sandwiched between first and second conductive sheets, where the die are separated by a relatively flat central conductive... | 06/27/2000 |
| 5866944 | Multichip press-contact type semiconductor device In the present invention, by virtue of heat buffer plates respectively located on the major surfaces of IGBT chips and FRD chips arranged in a single plane, the total thickness of each chip and a corresponding one of the heat can be set to a substantially... | 02/02/1999 |
| 5777351 | Compression bonded type semiconductor element and semiconductor device A compression bonded type semiconductor element having a ring-shaped gate terminal in the form of an annular metal disk projecting through the side of an insulating cylinder. The ring-shaped gate terminal includes an inner circumferential planar portion w... | 07/07/1998 |
| 5739556 | Pressure contact housing for semiconductor components In a pressure contact housing for semiconductor components, the gate electrode contact ring 4 is provided with spiral recesses 5. The latter can absorb axial movements produced during the assembly of the housing, without loading the material. A good and d... | 04/14/1998 |
| 5641976 | Pressure contact type semiconductor device with axial bias and radial restraint between a distortion buffer plate and a semiconductor body An alloy-free pressure contact type semiconductor device maintains a high reliability during transportation even without a pressure contact tool such as a simplified stack and therefore does not require a high transportation cost. Through holes (H1) and (... | 06/24/1997 |
| 5635757 | Power semiconductor module and circuit arrangement comprising at least two power semiconductor switch modules A circuit arrangement and a power semiconductor module are provided in which the circuit arrangement comprises a plurality of parallel-connected power semiconductor modules, of which only one is connected to a control device. The other modules function as... | 06/03/1997 |
| 5345096 | Turn-off high-power semiconductor component with low inductive housing In a turn-off high-power semiconductor component, in particular in the form of a GTO, comprising a disk-shaped semiconductor substrate (2) which is disposed concentrically in an annular insulating housing (10) between a disk-shaped cathode contact (4), to... | 09/06/1994 |
| 5278434 | Pressure engagement structure for a full press-pack type semiconductor device Coned disc springs (84, 86) lie between a gate extracting electrode (80G) held in a ringlike recess (63) of an external cathode electrode (60K) and a bottom surface of the ringlike recess (63). A semiconductor body (30) is pressed against an anode distort... | 01/11/1994 |
| 5198882 | Crimp-type power semiconductor device A crimp-type semiconductor device is provided with a semiconductor substrate having a lifetime-controlled region. This lifetime-controlled region is in the form of a ring, and the lifetime of the minority carriers is shortened in the region. Second-conduc... | 03/30/1993 |
| 5053854 | Semiconductor components A semiconductor component including a semiconductor substrate having a main electrode and a control electrode. The main electrode includes a groove in which is inserted a U-shaped insulation body. The control electrode is disposed in the groove and is ins... | 10/01/1991 |
| 5043795 | Semiconductor device Provided is a semiconductor device for power switching applications which utilizes a plurality of gate terminals provided in pressure contact with gate electrodes, the gate terminal/electrodes situated so as separate current flow therethrough at time of g... | 08/27/1991 |
| 4958215 | Press-contact flat type semiconductor device A press-contact flat type semiconductor device is disclosed which, without alloy-bonding a silicon pellet to a molybdenum or tungsten disc, assures a uniform press contact because a warp on the silicon pellet is largely reduced in comparison with a conven... | 09/18/1990 |
| 4956696 | Compression loaded semiconductor device A compression loaded semiconductor device package (40) in accordance with the invention includes a cylindrical semiconductor device (54) having a first region (66) on a first face, a control region (68) on the first face having a central portion (70) and ... | 09/11/1990 |
| 4953004 | Housing for a gate turn-off power thyristor (GTO) In a metal-ceramic housing for a high-power GTO, a space-saving auxiliary cathode connection (5a) capable of carrying current is achieved in that it is constructed by embedding in the insulating ring (4) of the housing and is connected directly to the cat... | 08/28/1990 |
| 4918514 | Press-contact type semiconductor device A soft metal plate having substantially equal hardness as emitter electrodes formed of soft metal is disposed between the emitter electrodes and a heat buffer metal plate formed of hard metal, and pressure applied to the emitter electrodes is shared by th... | 04/17/1990 |
| 4843452 | Thyrister housing gate lead and method of manufacturing same A thyrister housing gate lead and a method for its manufacture effectively prevents the accumulation of entrapped solutions within the gate lead without causing other damage to the thyrister housing. A gate lead is closed at the interior end situated with... | 06/27/1989 |
| 4835119 | Semiconductor device and a process of producing same A semiconductor device which comprises: a first main electrode on a first main surface of the semiconductor substrate, and a second main electrode on a second main surface thereof, the first main surface including a control electrode; a first outer main e... | 05/30/1989 |
| 4757367 | Light triggered semiconductor device with detachable auxiliary thyrister There is provided a light triggered thyristor device comprising a main thyristor triggered by an electric triggering signal, an auxiliary thyristor triggered by a light signal applied to a light receiving portion, the auxiliary thyristor then supplying th... | 07/12/1988 |
| 4719500 | Semiconductor device and a process of producing same A semiconductor device includes a first main electrode on a first main surface of the semiconductor substrate, and a second main electrode on a second main surface thereof, the first main surface including a control electrode; a first outer electrode and ... | 01/12/1988 |
| 4677454 | Thyristor with self-centering housing means An alignment of a light guide (10) and a photosensitive portion (1a) of an element (1) in a light-triggered thyristor is adapted such that, in order to eliminate a deviation or offset between the light guide and the photosensitive portion, an inner periph... | 06/30/1987 |
| 4628147 | Semiconductor housings A semiconductor housing particularly useful for very high current devices, e.g. transistors and G.T.O. thyristors, in which a control lead to the base or gate of the device, which also has to carry a relatively high current, passes through an insulating w... | 12/09/1986 |
| 4612561 | Parallel-connected gate turn-off thyristors A parallel connected gate turn-off thyristor device including an additional short circuiting conductor connected between the gate terminals of the respective gate turn-off thyristors so as to bypass a part of the turn-on and turn-off gate currents of one ... | 09/16/1986 |
| 4542398 | Semiconductor devices of multi-emitter type A multi-emitter type semiconductor device, namely, a semiconductor device having an arrangement in which a majority of emitter regions are divided by a gate region and surrounded thereby. In the semiconductor device, a member adapted to apply an external ... | 09/17/1985 |
