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| Number | Title | Issue Date |
| 8129746 | Phase change memory device and method of manufacturing the same A phase change memory device having a strain transistor and a method of making the same are presented. The phase change memory device includes a semiconductor substrate, a junction word line, switching diodes, and a strain transistor. The semiconductor substrate inc... | 03/06/2012 |
| 8044431 | Microdisplay packaging system Some embodiments provide a microdisplay integrated circuit (IC), a substantially transparent protective cover coupled to the microdisplay IC, and a base coupled to the microdisplay IC. Thermal expansion characteristics of the base may be substantially similar to the... | 10/25/2011 |
| 8035127 | Packaging substrate structure with a semiconductor chip embedded therein A packaging substrate structure with a semiconductor chip embedded therein is disclosed, including a carrier board having a first and an opposed second surfaces and disposed with at least a through cavity; a semiconductor chip received in the through cavity, the chi... | 10/11/2011 |
| 7943961 | Strain bars in stressed layers of MOS devices A semiconductor structure includes an active region; a gate strip overlying the active region; and a metal-oxide-semiconductor (MOS) device. A portion of the gate strip forms a gate of the MOS device. A portion of the active region forms a source/drain region of the... | 05/17/2011 |
| 7863646 | Dual oxide stress liner A transistor structure includes a first type of transistor (e.g., P-type) positioned in a first area of the substrate, and a second type of transistor (e.g., N-type) positioned in a second area of the substrate. A first type of stressing layer (compressive conformal... | 01/04/2011 |
| 7847318 | Multilayer build-up wiring board including a chip mount region Mesh holes 35a and 59a of upper solid layers 35 and upper solid layers 59 are formed to overlie on one another, so that the insulating properties of interlayer resin insulating layers 50 are not lowered. Here, the dia... | 12/07/2010 |
| 7582919 | Functional coating of the SCFM preform The invention relates to a power semiconductor module having at least one semiconductor chip (11) made of a semiconductor material and having a first and a second main electrode (12, 13), a first and a second main connection (91, 92) and a conta... | 09/01/2009 |
| 7341903 | Method of forming a field effect transistor having a stressed channel region A semiconductor structure comprises a transistor element formed in a substrate. A stressed layer is formed over the transistor element. The stressed layer has a predetermined compressive intrinsic stress having an absolute value of about 1 GPa or more. Due to this h... | 03/11/2008 |
| 7303427 | Electrical connector with air-circulation features A preferred embodiment of an electrical connector includes an electrical conductor for transmitting electrical power, and a housing. The electrical conductor is mounted in the housing so that the housing and the electrical conductor define a channel for circulating ... | 12/04/2007 |
| 7262507 | Semiconductor-mounted device and method for producing same Semiconductor-mounted device comprises wired board, first semiconductor chip mounted on first side of wired board, second semiconductor chip mounted on second side of wired board and sealing resin sealing, with a same height, a region disposed at and around first se... | 08/28/2007 |
| 7256431 | Insulating substrate and semiconductor device having a thermally sprayed circuit pattern An insulating substrate includes a metal base as a base member, an insulating layer which is a room temperature, aerosol deposited shock solidification film formed on the metal base, and a circuit pattern which is a cold sprayed thermal spray coating formed on the i... | 08/14/2007 |
| 7226296 | Ball grid array contacts with spring action An electrical contact for a ball grid array connector is disclosed for providing improved solder ball connection with a substrate. The contacts may be compressed, enabling solder balls of the connector to abut with the substrate prior to reflow. During reflow, the c... | 06/05/2007 |
| 7227198 | Half-bridge package A semiconductor package that includes two power semiconductor dies, such as power MOSFET dies, including vertical conduction MOSFETs, arranged in a half-bridge configuration is disclosed. The package may be mounted on a split conductive pad including two isolated di... | 06/05/2007 |
| 7214104 | Ball grid array connector An electrical connector having a leadframe assembly and a connector housing is disclosed. The leadframe may include a lead frame and an electrical contact extending at least partially through the lead frame. The connector housing contains the leadframe assembly in e... | 05/08/2007 |
| 7193254 | Structure and method of applying stresses to PFET and NFET transistor channels for improved performance A semiconductor device structure is provided which includes a first semiconductor device; a second semiconductor device; and a unitary stressed film disposed over both the first and second semiconductor devices. The stressed film has a first portion overlying the fi... | 03/20/2007 |
| 7187074 | Semiconductor and electronic device with spring terminal A semiconductor or electronic device, such as a power module uses at least one spring terminal as a control terminal. The spring terminal is led outside a case through a coil-accommodating member, which can be a frame or removable cover. With this arrangement, the s... | 03/06/2007 |
| 7084517 | Semiconductor device connecting structure, liquid crystal display unit based on the same connecting structure, and electronic apparatus using the same display unit A semiconductor device connecting structure is provided for connecting a semiconductor IC to a substrate. A bonding layer is placed between the substrate and the semiconductor IC to accomplish adhesion therebetween. Sufficient heat and pressure are applied to the bo... | 08/01/2006 |
| 7045831 | Semiconductor device A semiconductor device of the present invention comprises a semiconductor chip, metal layers formed on a first main surface of the semiconductor chip, a first conductive layer layered on a second main surface of the semiconductor chip, consisting of a plurality of c... | 05/16/2006 |
| 7046155 | Fault detection system A fault detection system detecting malfunctions or deteriorations, which may result in an inverter fault, is provided. The system has a temperature sensor installed on a semiconductor module to monitor a temperature rise rate. It is judged that an abnormal condition... | 05/16/2006 |
| 7009292 | Package type semiconductor device A package type semiconductor device comprising: a semiconductor chip having a semiconductor part; a main electrode for connecting to a first region of the semiconductor part; a control wiring layer for connecting to a second region of the semiconductor part; a block... | 03/07/2006 |
| 6949828 | Wiring structure having integral wiring portion and plug portion and method of forming the same In a wiring structure in which a wiring portion and a plug portion each made of a Cu material are formed integrally through a damascene process, the difference between deviation stress applied to the wiring portion in a longitudinal direction and deviation stress ap... | 09/27/2005 |
| 6917052 | Modified contact for programmable devices In an aspect, an apparatus is provided that sets and reprograms the state of programmable devices. In an aspect, a method is provided such that an opening is formed through a dielectric exposing a contact formed on a substrate. The resistivity of the contact is modi... | 07/12/2005 |
| 6870266 | Oxide semiconductor electrode and process for producing the same The present invention provides an oxide semiconductor electrode which can realize a combination of high transparency with large surface area and is highly responsive to ultraviolet light, as well as to visible light. The oxide semiconductor electrode comprises a con... | 03/22/2005 |
| 6787815 | High-isolation semiconductor device A switching device for switching a plurality of RF signal lines to deliver a selected one of the RF signals to a receiver has an isolation D/U characteristic as high as 40 dB or higher. The switching device includes a mounting board made of dielectric and a matrix s... | 09/07/2004 |
| 6495924 | Semiconductor device, including an arrangement to provide a uniform press contact and converter using same In accordance with a press contact type semiconductor device, a metallic body having macroscopic vacancies inside is arranged between a main electrode of the semiconductor device and a main electrode plate, or between an intermediate electrode plate arran... | 12/17/2002 |
| 6399891 | Multilayer boards A multilayer board free from breakage at connecting parts due to thermal fatigue is provided. A multilayer board 1 of the present invention comprises alternating polyimide films 11-16 and copper films 21-26. The polyimide films 11-16 have a thermal expans... | 06/04/2002 |
| 6087682 | High power semiconductor module device High power semiconductor module device constituted in such a manner that a circuit board to which semiconductor pellets are bonded is bonded onto a heat sink, and an electrically insulating case with elasticity which has a tubular portion surrounding the ... | 07/11/2000 |
| 6081039 | Pressure assembled motor cube A pressure assembled power module is provided with first and second die, the first and second die being stacked atop one another and sandwiched between first and second conductive sheets, where the die are separated by a relatively flat central conductive... | 06/27/2000 |
| 5874774 | Flat package semiconductor device A semiconductor device is provided which includes a plurality of semiconductor chips each of which has a first main electrode and a control electrode on a first main surface and a second main electrode on a second main surface, and a plurality of support ... | 02/23/1999 |
| 5866944 | Multichip press-contact type semiconductor device In the present invention, by virtue of heat buffer plates respectively located on the major surfaces of IGBT chips and FRD chips arranged in a single plane, the total thickness of each chip and a corresponding one of the heat can be set to a substantially... | 02/02/1999 |
| 5739556 | Pressure contact housing for semiconductor components In a pressure contact housing for semiconductor components, the gate electrode contact ring 4 is provided with spiral recesses 5. The latter can absorb axial movements produced during the assembly of the housing, without loading the material. A good and d... | 04/14/1998 |
| 5721455 | Semiconductor device having a thermal resistance detector in the heat radiating path In a semiconductor device comprising a semiconductor chip on which semiconductor elements are formed, the semiconductor device further comprises a thermal resistance detector for detecting an increase of thermal resistance of a heat radiating path which i... | 02/24/1998 |
| 5641976 | Pressure contact type semiconductor device with axial bias and radial restraint between a distortion buffer plate and a semiconductor body An alloy-free pressure contact type semiconductor device maintains a high reliability during transportation even without a pressure contact tool such as a simplified stack and therefore does not require a high transportation cost. Through holes (H1) and (... | 06/24/1997 |
| 5635734 | Insulated gate type semiconductor device in which the reliability and characteristics thereof are not deteriorated due to pressing action and power inverter using the same An insulated gate type semiconductor device has a gate electrode which controls current flow between two regions of the same conductivity type in a semiconductor substrate. A main electrode has a first portion contacting a first one of the two regions, a ... | 06/03/1997 |
| 5578841 | Vertical MOSFET device having frontside and backside contacts A multiple output, vertical MOSFET device (11) with improved electrical performance and thermal dissipation is integrated with an additional semiconductor device or semiconductor circuit (18) on a single semiconductor substrate (34). The method of making ... | 11/26/1996 |
| 5539232 | MOS composite type semiconductor device A plurality of segments of small-sized IGBT devices are arranged concentrically in a plurality of rows in a pellet substrate. Each segment has an independent polysilicon gate electrode layer. A gate electrode terminal lead-out portion is provided at a cen... | 07/23/1996 |
| 5506425 | Semiconductor device and lead frame combination An optically-triggered silicon controlled rectifier (SCR) device (21) mounted on a lead frame (34). The SCR device contains a cathode layer (24), an optical gate or control layer (23), and an anode layer (31) formed on a semiconductor substrate (22). The ... | 04/09/1996 |
| 5504351 | Insulated gate semiconductor device A method of forming an insulated gate semiconductor device (10). A field effect transistor and a bipolar transistor are formed in a portion of a monocrystalline semiconductor substrate (11) that is bounded by a first major surface (12). A control electrod... | 04/02/1996 |
| 5428229 | Pressure contact type MOS semiconductor device and fabrication method of the same A MOS semiconductor device which exhibits high switching operations including high turn-on and an excellent self-cooling capability. The device prevents damage to insulation films and electrodes thereof. An IGT includes a multi-layer structure having a p ... | 06/27/1995 |
| 4881118 | Semiconductor device One surface of a cathode sliding compensator is finished as an irregular surface while another surface thereof is finished as a sliding surface. The irregular surface is arranged to contact with a cathode electrode layer of a semiconductor element while t... | 11/14/1989 |
