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| Number | Title | Issue Date |
| 7319250 | Semiconductor component and method for producing the same A method for producing a semiconductor component has the following step: the front side (101) of the semiconductor body (100) is irradiated with high-energy particles using the terminal electrode (40) as a mask, in order to produce recombination... | 01/15/2008 |
| 7262478 | Semiconductor device and manufacturing method thereof A semiconductor device and method of manufacturing the same includes an n−-single crystal silicon substrate, with an oxide film selectively formed thereon. On the oxide film, gate polysilicon is formed. The surface of the gate polysilicon is covered wit... | 08/28/2007 |
| 7098488 | Insulated gate bipolar transistor An IGBT having a trench gate structure is disclosed which generates decreased noise at switching and displays superiority in saturation voltage to turn-off loss characteristics (trade-off characteristics). In a part of a region on an emitter side surface interposed ... | 08/29/2006 |
| 6965129 | Thyristor-based device having dual control ports Switching operations, such as those used in memory devices, are enhanced using a thyristor-based semiconductor device adapted to switch between a blocking state and a conducting state. According to an example embodiment of the present invention, a thyristor-based se... | 11/15/2005 |
| 6963088 | Semiconductor component A semiconductor component is arranged in a semiconductor body and has at least one integrated radially symmetrical lateral resistance having a location-dependent sheet resistance, the radial dependence of which is preferably configured such that the differential res... | 11/08/2005 |
| 6013941 | Bipolar transistor with collector surge voltage protection A semiconductor device provided with a planar bipolar transistor and a built-in ingredient acting as an element to protect the bipolar transistor from an external surge voltage e.g. an electrostatic surge voltage and the like, is provided with a planar bi... | 01/11/2000 |
| 5986290 | Silicon controlled rectifier with reduced substrate current The invention provides a silicon controlled rectifier having an anode and a cathode and including an NPN transistor and a PNP transistor. The NPN transistor has an emitter coupled to the cathode, a base and a collector. The PNP transistor has a base coupl... | 11/16/1999 |
| 5682044 | Reverse conducting thyristor with a planar-gate, buried-gate, or recessed-gate structure The present invention provides a reverse conducting (RC) thyristor of a planar-gate structure for low-and-medium power use which is relatively simple in construction because of employing a planar structure for each of thyristor and diode regions, permits ... | 10/28/1997 |
| 4982261 | Semiconductor device Respective side ends (20s, 1s) of a T1 electrode (20) and a gate electrode (1) of a TRIAC (70) are mutually adjacent and located on a P1 layer (13). The side ends (20s, 1s) are connected electrically by a resistance area (13a) which ... | 01/01/1991 |
| 4291329 | Thyristor with continuous recombination center shunt across planar emitter-base junction A four-layer semiconductor thyristor including a planar recombination region extending on both sides of a planar cathode-emitter junction.... | 09/22/1981 |
| 4286279 | Multilayer semiconductor switching devices The specification discloses semiconductor switching devices having more than five layers of alternating semiconductor conductivity types and which do not utilize substantial lateral switching currents during the operation thereof. Ones of the exterior lay... | 08/25/1981 |
| 4208669 | Controllable semiconductor rectifier with interference potential compensation A controllable semiconductor rectifier which is subject to an interference potential and controllable by a control power comprises a first emitter layer, a first main electrode connected to the first emitter layer, a control base layer connected to the fi... | 06/17/1980 |
| 4190853 | Multilayer semiconductor switching devices The specification discloses semiconductor switching devices having more than five layers of alternating semiconductor conductivity types and which do not utilize substantial lateral switching currents during the operation thereof. Ones of the exterior lay... | 02/26/1980 |
| 4163241 | Multiple emitter and normal gate semiconductor switch The specification discloses a multilayer semiconductor rectifier having an emitter gate, a cathode and an anode. In addition, the rectifier includes at least one region of semiconductor material electrically remote from the emitter gate. A second gate ele... | 07/31/1979 |
| 4089024 | Semiconductor switching device A semiconductor switching device including at least three PN junctions and a control electrode formed on a portion of the surface of one outermost layer out of the layers constituting said PN junctions, wherein, in order to positively ensure that it turns... | 05/09/1978 |
| 4063278 | Semiconductor switch having sensitive gate characteristics at high temperatures The specification discloses a sensitive gate controlled rectifier including a semiconductor body having four layers of alternating opposite conductivity types. A first highly doped region of a first conductivity type is formed in a first exterior layer of... | 12/13/1977 |
| 3967308 | Semiconductor controlled rectifier A thyristor with a gate electrode formed on the side of an anode electrode. An auxiliary region of a large lateral resistance is formed in a surface layer of the substrate between the anode and gate electrodes.... | 06/29/1976 |
