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| Number | Title | Issue Date |
| 7910951 | Low side zener reference voltage extended drain SCR clamps In a CMOS implemented free or parasitic pnp transistor, triggering is controlled by introducing a low side zener reference voltage. ... | 03/22/2011 |
| 7652308 | Semiconductor device having gate-all-around structure and method of fabricating the same Semiconductor devices having a gate-all-around (GAA) structure capable of higher operating performance may be provided. A semiconductor device may include a semiconductor substrate, at least one gate electrode, and at least one gate insulating layer. The semiconduct... | 01/26/2010 |
| 7417282 | Vertical double-diffused metal oxide semiconductor (VDMOS) device incorporating reverse diode The present invention disclosed herein is a Vertical Double-Diffused Metal Oxide Semiconductor (VDMOS) device incorporating a reverse diode. This device includes a plurality of source regions isolated from a drain region. A source region in close proximity to the dr... | 08/26/2008 |
| 7381998 | Semiconductor integrated circuit device A semiconductor integrated circuit device according to the present invention includes a diode in a second island region. The anode region of the diode and the dividing region in a first island region having a horizontal PNP transistor are electrically connected to e... | 06/03/2008 |
| 7285805 | Low reference voltage ESD protection device In a low voltage ESD protection device, an extra control electrode is created by not connecting the n+ drain and p+ emitter regions of the LVTSCR, and controlling the control electrode by means of a diode connected NMOS. ... | 10/23/2007 |
| 7262442 | Triac operating in quadrants Q1 and Q4 A triac including on its front surface side an autonomous starting well of the first conductivity type containing a region of the second conductivity type arranged to divide it, in top view, into a first and a second well portion, the first portion being connected t... | 08/28/2007 |
| 7205583 | Thyristor and method of manufacture A thyristor and a method for manufacturing the thyristor that includes providing a semiconductor substrate that has first and second major surfaces. A first doped region is formed in the semiconductor substrate, wherein the first doped extends from the first major s... | 04/17/2007 |
| 7193255 | Semiconductor device with floating conducting region placed between device elements Floating conducting regions at floating potentials are placed on a substrate surface between adjacent conducting regions to which predetermined potentials are applied. This makes it possible to block the spread of a depletion layer to the substrate between the condu... | 03/20/2007 |
| 7173308 | Lateral short-channel DMOS, method for manufacturing same and semiconductor device A lateral short-channel DMOS includes an epitaxial layer formed on a semiconductor substrate. A first conductivity-type well is formed in the epitaxial layer. A second conductivity-type well is formed in the first conductivity-type well and includes a channel formin... | 02/06/2007 |
| 7161210 | Semiconductor device with source and drain regions A semiconductor device is provided with a gate electrode formed over a substrate that has gate oxide films disposed thereon. Source-drain regions of low and high concentration are formed next to the gate electrode. A diffusion region width of the source side of the ... | 01/09/2007 |
| 7135359 | Manufacturing methods for large area silicon carbide devices Large area silicon carbide devices, such as light-activated silicon carbide thyristors, having only two terminals are provided. The silicon carbide devices are selectively connected in parallel by a connecting plate. Silicon carbide thyristors are also provided havi... | 11/14/2006 |
| 7122861 | Semiconductor device and manufacturing method thereof The present invention relates to a semiconductor device including a high withstand voltage MOS transistor and a manufacturing method thereof. The semiconductor device according to the present invention includes a MOS transistor in which a second-conductivity type so... | 10/17/2006 |
| 7112828 | Semiconductor device A semiconductor device that permits an increase in static destruction resistance while preventing an increase in the chip size includes a protective element formed by a polysilicon layer in which JFETs are serially connected in three stages and which is inserted bet... | 09/26/2006 |
| 7098488 | Insulated gate bipolar transistor An IGBT having a trench gate structure is disclosed which generates decreased noise at switching and displays superiority in saturation voltage to turn-off loss characteristics (trade-off characteristics). In a part of a region on an emitter side surface interposed ... | 08/29/2006 |
| 6987290 | Current-jump-control circuit including abrupt metal-insulator phase transition device A current-jump-control circuit including an abrupt metal-insulator phase transition device is proposed, and includes a source, the abrupt metal-insulator phase transition device and a resistive element. The abrupt metal-insulator phase transition device includes fir... | 01/17/2006 |
| 6965129 | Thyristor-based device having dual control ports Switching operations, such as those used in memory devices, are enhanced using a thyristor-based semiconductor device adapted to switch between a blocking state and a conducting state. According to an example embodiment of the present invention, a thyristor-based se... | 11/15/2005 |
| 6963088 | Semiconductor component A semiconductor component is arranged in a semiconductor body and has at least one integrated radially symmetrical lateral resistance having a location-dependent sheet resistance, the radial dependence of which is preferably configured such that the differential res... | 11/08/2005 |
| 6953953 | Deep trench isolation for thyristor-based semiconductor device A thyristor-based semiconductor device includes a filled trench separating and electrically insulating adjacent thyristor control ports. According to an example embodiment of the present invention, the filled trench is formed in a substrate adjacent to at least one ... | 10/11/2005 |
| 6921931 | Electrostatic discharge protection element A the present invention provides an electrostatic discharge protection element to be used in a semiconductor integrated circuit providing MOSFET, comprising a thyristor and a trigger diode for triggering the thyristor into an ON-state, wherein the trigger diode prov... | 07/26/2005 |
| 6921930 | Pulse-controlled bistable bidirectional electronic switch The invention concerns a bidirectional electronic switch of the pulse-controlled bistable type comprising a monolithic semiconductor circuit including a vertical bidirectional switch structure (TR; ACS) provided with a gate terminal (G1), first (Th1) a... | 07/26/2005 |
| 6897543 | Electrically-programmable integrated circuit antifuses Integrated circuit antifuse circuitry is provided. A metal-oxide-semiconductor (MOS) antifuse transistor serves as an electrically-programmable antifuse. In its unprogrammed state, the antifuse transistor is off and has a relatively high resistance. During programmi... | 05/24/2005 |
| 6897492 | Power device with bi-directional level shift circuit A gate driver includes a control signal generator having a first input and configured to output a gate control signal to a power semiconductor switch. The gate control signal generator is provided proximate a high side of the gate driver. A first sub-circuit has a f... | 05/24/2005 |
| 6838708 | I/O cell and ESD protection circuit An ESD protection circuit has a VDD bus, a VSS bus, an IC pad, a PMOS transistor coupled to the IC pad and the VDD bus, and an NMOS transistor coupled to the IC pad and the VSS bus. The pitch of the PMOS can smaller than the pitch of the NMOS, and the drain-contact-... | 01/04/2005 |
| 6806516 | Semiconductor device and system Disclosed herewith is a semiconductor device improved to prevent withstand voltage defects that might occur in each MOSFET used therein and a system to be designed easily and prevented from withstand voltage defects that might occur in each semiconductor used therei... | 10/19/2004 |
| 6803633 | Electrostatic discharge protection structures having high holding current for latch-up immunity An electrostatic discharge (ESD) protection device having high holding current for latch-up immunity. The ESD protection circuit is formed in a semiconductor integrated circuit (IC) having protected circuitry. The ESD protection device includes a silicon controlled ... | 10/12/2004 |
| 6790713 | Method for making an inlayed thyristor-based device A semiconductor device having a thyristor is manufactured and arranged in a manner that reduces or eliminates difficulties commonly experienced in the formation and implementation of such devices. According to an example embodiment of the present invention, a thyris... | 09/14/2004 |
| 6791146 | Silicon controlled rectifier structure with guard ring controlled circuit The present invention provides a PMSCR (bridging modified lateral modified silicon controlled rectifier having first conductivity type) with a guard ring controlled circuit. The present invention utilizes controlled circuit such as switch to control functionally of ... | 09/14/2004 |
| 6791161 | Precision Zener diodes The present invention is directed to a novel semiconductor device, which can be efficiently fabricated for use in Zener diode applications. Precision Zener diodes and the method for manufacturing the same are provided. The Zener diodes of the present invention are m... | 09/14/2004 |
| 6762461 | Semiconductor element protected with a plurality of zener diodes A protective circuit for protecting an IGBT from a stress due to application of an overvoltage which is induced by a surge such as static electricity is provided. The protective circuit allows for improvement in a voltage tolerance to a stress due to application of ... | 07/13/2004 |
| 6759692 | Gate driver with level shift circuit A gate driver includes a gate control signal generator having a first input and configured to output a gate control signal to a power semiconductor switch and a first sub-circuit having a first signal path and a second signal path that are suitable for transmitting ... | 07/06/2004 |
| 6707110 | Layout configurable electrostatic discharge device for integrated circuits Electrostatic discharge protection device comprising a first highly p-doped region with a base contact, a first highly n-doped region with a collector contact, a second highly n-doped region with an emitter contact and located between the first highly p-doped region... | 03/16/2004 |
| 6696701 | Electrostatic discharge protection for pixellated electronic device An electronic device (10) comprises an array of pixels (12), arranged in rows and columns (14,16) with row and column address lines (18,20) for addressing each pixel (12). Each row and column address line is connected to two discharge lines (30,32) throug... | 02/24/2004 |
| 6696708 | Electrostatic discharge protection apparatus The present invention reveals an electrostatic discharge protection apparatus including a silicon controlled rectifier, a triggering voltage adapter network and a holding voltage adapter network. Additionally, the triggering voltage adapter network and th... | 02/24/2004 |
| 6614073 | SEMICONDUCTOR CHIP WITH A BASE ELECTRODE AND AN EMITTER ELECTRODE EXPOSED ON ONE OF A PAIR OF OPPOSITE LATERAL FACES AND A COLLECTOR ELECTRODE EXPOSED ON A REMAINING ONE OF THE PAIR OF THE OPPOSITE LATERAL FACES A semiconductor chip provided, at a lateral face thereof, with an electrode for external electric connection. Where a semiconductor chip has a plurality of electrodes, all the electrodes are preferably formed at one or more lateral faces of the semiconduc... | 09/02/2003 |
| 6603153 | Fast recovery diode and method for its manufacture A soft recovery diode is made by first implanting helium into the die to a location below the P/N junction and the implant annealed. An E-beam radiation process then is applied to the entire wafer and is also annealed. The diode then has very soft recover... | 08/05/2003 |
| 6593600 | Responsive bidirectional static switch A monolithic bidirectional switch formed in a semiconductor substrate of type N, including a first main vertical thyristor, the rear surface layer of which is of type P, a second main vertical thyristor, the rear surface layer of which is of type N, an au... | 07/15/2003 |
| 6576934 | Embedded SCR protection device for output and input pad An embedded SCR in conjunction with a Gated-NMOS is created for protecting a chip input or output pad from ESD, by inserting a p+ diffusion and the n-well in the drain side and a part of the drain to forms a low-trigger, high efficiency SCR. The device la... | 06/10/2003 |
| 6555878 | Umos-like gate-controlled thyristor structure for ESD protection Described is a MOS gate-controlled SCR (UGSCR) structure with a U-shaped gate (UMOS) for an ESD protection circuit in an IC device which is compatible with shallow trench isolation (STI) and self-aligned silicide (salicide) fabrication technology. The UMO... | 04/29/2003 |
| 6495866 | Semiconductor device for preventing an increased clamp voltage in an ignition circuit Providing a semiconductor device for use in a ignition circuit, which prevents an increase in clamp voltage and allows application of a constant voltage across an ignition plug. In a semiconductor device which comprises a transistor and a zener diode conn... | 12/17/2002 |
| 6433407 | Semiconductor integrated circuit A protection circuit in a semiconductor integrated circuit having a master slice I/O circuit comprises an internal circuit, a pad, and a desired number of protection elements connected in parallel between the internal circuit and the pad. Each protection ... | 08/13/2002 |
