Class 257/174 - Rate of rise of current (e.g., dI/dt)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the parameter for which protection
No. of patents: 86
Last issue date: 10/07/2008

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Number	Title	Issue Date
7432555	Testable electrostatic discharge protection circuits A semiconductor die has a bonding pad for a MOSFET such as a power MOSFET and a separate bonding pad for ESD protection circuitry. Connecting the bonding pads together makes the ESD protection circuitry functional to protect the MOSFET. Before connecting the bonding...	10/07/2008
7361957	Device for electrostatic discharge protection and method of manufacturing the same The present invention relates to a device for electrostatic discharge protection (ESD). According to an embodiment of the present invention, a device for electrostatic discharge protection includes a semiconductor substrate, a plurality of field oxide films formed i...	04/22/2008
7355250	Electrostatic discharge device with controllable holding current An electrostatic discharge (ESD) device with a parasitic silicon controlled rectifier (SCR) structure and controllable holding current is provided. A first distance is kept between a first N+ doped region and a first P+ doped region, and a second distance is kept be...	04/08/2008
7329925	Device for electrostatic discharge protection A device for electrostatic discharge (ESD) protection is disclosed. The device for electrostatic discharge protection includes a lateral bipolar transistor and a diode. The semiconductor transistor has an emitter, a base and a collector electrically connected to a f...	02/12/2008
7294542	Method of fabricating a semiconductor device having CMOS transistors and a bipolar transistor To reduce electric current concentration and electric field concentration in junction parts even in the case of miniaturization, and to achieve triggering at low voltage, an ESD protection apparatus is installed between an input terminal of a semiconductor integrate...	11/13/2007
7276778	Semiconductor system functioning as thyristor in on-state, and as bipolar transistor in transient state or with overcurrent A semiconductor system includes a self arc-extinguishing device, and an IGBT that works as a thyristor when a current between a first terminal and a second terminal connected to a second well electrode is small, and as a bipolar transistor when that current is large...	10/02/2007
7274071	Electrostatic damage protection device with protection transistor This invention provides an electrostatic damage protection device which can protects a device to be protected enough from an electrostatic damage and prevents damages of protection transistors themselves. A N-channel type first MOS transistor and a N-channel type se...	09/25/2007
7250660	ESD protection that supports LVDS and OCT Circuits are described that provide electrostatic discharge protection for I/O circuits that support the low voltage differential signaling (LVDS) and on-chip termination (OCT) standards. At least one additional transistor is connected across an I/O transistor. In t...	07/31/2007
7235846	ESD protection structure with SiGe BJT devices The present invention provides an ESD protection device or structure that exploits the high conductivity of a heavily doped heterojunction base of a standard SiGe bipolar junction transistor (BJT) cell. This improved ESD protection scheme further uses the combinatio...	06/26/2007
7205612	Fully silicided NMOS device for electrostatic discharge protection A device and method are described for forming a grounded gate NMOS (GGNMOS) device used to provide protection against electrostatic discharge (ESD) in an integrated circuit (IC). The device is achieved by adding n-wells below the source and drain regions. By tailori...	04/17/2007
7202114	On-chip structure for electrostatic discharge (ESD) protection A complementary SCR-based structure enables a tunable holding voltage for robust and versatile ESD protection. The structure are n-channel high-holding-voltage low-voltage-trigger silicon controller rectifier (N-HHLVTSCR) device and p-channel high-holding-voltage lo...	04/10/2007
7196377	MOS type semiconductor device having electrostatic discharge protection arrangement In a semiconductor device having an electrostatic discharge protection arrangement, a semiconductor substrate exhibits a first conductivity type. First and second impurity regions each exhibiting a second conductivity type are formed in the semiconductor substrate. ...	03/27/2007
7161191	HF-control SCR switch structure A vertical SCR-type switch including a control area having a first control region forming a first diode with a first neighboring region or layer, and a second control region forming a second diode with a second neighboring region or layer. A contact is formed on eac...	01/09/2007
7098509	High energy ESD structure and method In one embodiment, a concentric ring ESD structure includes a first p-type region and a second p-type region are formed in a layer of semiconductor material. The two p-type regions are coupled together with a floating n-type buried layer. The first and second p-type...	08/29/2006
7067884	Electrostatic discharge device M pieces of n-well regions nW are provided on a main surface of a p-type silicon substrate 3, and p-well regions pW are provided among the n-well regions adjacent to one another. Moreover, each of the M pieces of n-well regions nW includes an n-type diffusion...	06/27/2006
7002218	Low capacitance ESD-protection structure under a bond pad An ESD-protection structure is located substantially under an integrated circuit bond pad. This ESD-protection structure is formed as a low capacitance structure by inserting a forward diode between the bond pad and the ESD clamp circuit. Placing the ESD-protection ...	02/21/2006
6987290	Current-jump-control circuit including abrupt metal-insulator phase transition device A current-jump-control circuit including an abrupt metal-insulator phase transition device is proposed, and includes a source, the abrupt metal-insulator phase transition device and a resistive element. The abrupt metal-insulator phase transition device includes fir...	01/17/2006
6967378	Semiconductor integrated circuit device configured to prevent the generation of a reverse current in a MOS transistor A semiconductor integrated circuit device has a MOS transistor M2 including a parasitic diode Dx2 for preventing a reverse current due to a parasitic diode Dx1 of a MOS transistor M1. The semiconductor integrated circuit device further ha...	11/22/2005
6951792	Dual-oxide transistors for the improvement of reliability and off-state leakage The invention provides a transistor having low leakage currents and methods of fabricating the transistor on a semiconductor substrate. The transistor has a gate and a nonuniform gate oxide under the gate. ...	10/04/2005
6891208	Protection structure against electrostatic discharges (ESD) for an electronic device integrated on a SOI substrate, and corresponding integration process A protection structure against electrostatic discharges for a semiconductor electronic device that is integrated inside a well is disclosed, wherein the well is formed on a SOI substrate and isolated dielectrically by a buried oxide layer and an isolation structure,...	05/10/2005
6888248	Extended length metal line for improved ESD performance A multi-level metal interconnect structure and method for forming the same for improving a resistance of CMOS transistors to electrostatic discharge (ESD) transient events is disclosed. A semiconductor device including at least one NMOS transistor electrically conne...	05/03/2005
6864538	Protection device against electrostatic discharges An ESD protection device encompassing a vertical bipolar transistor that is connected as a diode and has an additional displaced base area. The assemblage has a space-saving configuration and a decreased difference between snapback voltage and breakdown voltage....	03/08/2005
6858900	ESD protection devices and methods to reduce trigger voltage ESD protection devices and methods of forming them are provided in this invention. By employing the thin gate oxide fabricated by a dual gate oxide process and breakdown-enhanced layers, ESD protection devices with a lower trigger voltage are provided. The NMOS stru...	02/22/2005
6844573	Structure for minimizing hot spots in SOI device In a high power input/output SOI semiconductor structure, the transistors thereof are laid out in a manner so that the high current density transistors, subject to the greatest heat buildup, are spaced apart in a manner as to avoid significant heat buildup. ...	01/18/2005
6791123	ESD protection element An n− type layer 12 is epitaxially grown on one main surface (front surface) of an n+ type silicon substrate 11 and an anode electrode 13 is electrically in contact with the other main surface (rear surface) thereof. A p ...	09/14/2004
6696709	Low voltage protection module A semiconductor thyristor device incorporates buried regions to achieve low breakover voltage devices, and the buried regions are offset laterally with respect to the emitter regions. The low voltage thyristor devices can be incorporated into five-pin pro...	02/24/2004
6657241	ESD structure having an improved noise immunity in CMOS and BICMOS semiconductor devices A semiconductor device includes a grounded-gate n-channel field effect transistor (FET) between an I/O pad and ground (Vss) and/or Vcc for providing ESD protection. The FET includes a tap region of grounded p-type semiconductor mater...	12/02/2003
6631061	Semiconductor integrated device A semiconductor integrated device is provided which consists of a plurality of circuit blocks. Each circuit block is connected to a power supply terminal and a ground terminal. Signal interface sections connect signal circuits among the circuit blocks. A ...	10/07/2003
6614061	Electrostatic discharge-protection semiconductor device The present invention provides an electrostatic discharge-protection device located between a pad and a specific voltage point. The electrostatic discharge-protection device has a P-type substrate. Then a first N-type well, a first P-type doped region, an...	09/02/2003
6597021	Protection circuit and semiconductor device A protection circuit for protecting a semiconductor device from being damaged due to an excessively high applied voltage, includes a P-type MOS transistor provided between an external input-output terminal and a power supply line, an N-type MOS transistor...	07/22/2003
6590261	Electrostatic discharge protection structure An electrostatic discharge (ESD) protection structure is disclosed. The ESD protection structure of the present invention uses a resistance capacitance (RC) circuit to distinguish an overshoot phenomenon caused by the instantaneous power-on from an ESD ev...	07/08/2003
6566717	Integrated circuit with silicided ESD protection transistors An electrostatic discharge (ESD) protection circuit for protecting an internal device from an ESD is disclosed. The ESD protection circuit includes an NMOS transistor connected to a ground voltage terminal having silicide layers on a gate electrode and on...	05/20/2003
6562652	Edge formation process with anodizing for aluminum solid electrolytic capacitor Edges of a slit and cut to length foil having a dielectric oxide film on at least one surface are edge formed by comprising anodizing the foil in an aqueous oxalic acid electrolyte, further edge a forming the foil in an aqueous citrate electrolyte, prefer...	05/13/2003
6353247	High voltage electrostatic discharge protection circuit A high voltage electrostatic discharge protection circuit having a virtual N+ region additionally formed according to the invention is disclosed. Due to the formation of the virtual N+ region, the distance between the base and collec...	03/05/2002
6329694	Semiconductor device with ESD protective circuit A semiconductor device with an electrostatic discharge (ESD) protective circuit is disclosed. In this semiconductor device with an ESD protective circuit, an n-well guard ring is formed around an NMOS field transistor of a data input buffer or around an N...	12/11/2001
6291879	Integrated circuit chip with improved locations of overvoltage protection elements On a semiconductor integrated circuit chip, multiple equipotential power-line conductors are provided to supply power to circuit elements. First protecting elements are provided for interconnecting the power-line conductors for protecting the circuit elem...	09/18/2001
6274908	Semiconductor device having input-output protection circuit A semiconductor device having a SOI structure in which an ESD resistance can be enhanced is obtained. The semiconductor device comprises PMOS transistors Q21 and Q22 which are brought into a forward bias state if a positive high voltage is applied as a su...	08/14/2001
6180966	Trench gate type semiconductor device with current sensing cell A trench gate type semiconductor device with a current sensing cell is composed so that the orientation of crystal face at side walls of trenches forming channels of trench gates in a main cell is equal or almost equal, or equivalent or almost equivalent ...	01/30/2001
6147368	Voltage-driven power semiconductor device A voltage-driven power semiconductor device includes a voltage-driven IEGT chip, a collector electrode plate, an emitter electrode plate, and an inductance material. The collector electrode plate is connected to the collector of the IEGT chip, and press-c...	11/14/2000
6107664	Self-locking static micro-circuit breaker A static self-locking micro-circuit-breaker includes a first MOS depletion transistor of a first type connected by its drain to a first main terminal and by its gate to a second main terminal, a second MOS depletion transistor of second type connected by ...	08/22/2000

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Class 257/174 - Rate of rise of current (e.g., dI/dt)