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| Number | Title | Issue Date |
| 8183593 | Semiconductor die with integrated electro-static discharge device A semiconductor die is described. This semiconductor die includes an electro-static discharge (ESD) device with a metal component coupled to an input-output (I/O) pad, and coupled to a ground voltage via a signal line. Moreover, adjacent edges of the metal component... | 05/22/2012 |
| 8178897 | Semiconductor ESD device and method of making same A semiconductor device includes an SCR ESD device region disposed within a semiconductor body, and a plurality of first device regions of the first conductivity type disposed on a second device region of the second conductivity type, where the second conductivity ty... | 05/15/2012 |
| 8174047 | Semiconductor device To improve the performance of a protection circuit including a diode formed using a semiconductor film. A protection circuit is inserted between two input/output terminals. The protection circuit includes a diode which is formed over an insulating surface and is for... | 05/08/2012 |
| 8169000 | Lateral transient voltage suppressor with ultra low capacitance A lateral transient voltage suppressor with ultra low capacitance is disclosed. The suppressor comprises a first conductivity type substrate and at least one diode cascade structure arranged in the first conductivity type substrate. The cascade structure further com... | 05/01/2012 |
| 8164112 | Electostatic discharge protection circuit coupled on I/O pad An I/O pad ESD protection circuit is composed of a SCR circuit, a first diode, a second diode, and an anti-latch-up circuit. The SCR circuit has a first connection terminal and a second connection terminal, respectively coupled to the I/O pad and the ground voltage,... | 04/24/2012 |
| 8164114 | Semiconductor devices with gate-source ESD diode and gate-drain clamp diode A semiconductor power device integrated with a Gate-Source ESD diode for providing an electrostatic discharge (ESD) protection and a Gate-Drain clamp diode for drain-source avalanche protection. The semiconductor power device further includes a Nitride layer underne... | 04/24/2012 |
| 8164113 | Electrostatic discharge structure for 3-dimensional integrated circuit through-silicon via device An electrostatic discharge (ESD) structure for a 3-dimensional (3D) integrated circuit (IC) through-silicon via (TSV) device is provided. The ESD structure includes a substrate, a TSV device which is formed through the substrate and is equivalent to a resistance-ind... | 04/24/2012 |
| 8154049 | ESD protection apparatus and electrical circuit including same An ESD protection apparatus includes a substrate, a transistor structure arranged in the substrate, and a diode structure arranged in the substrate, a high-resistance electrical connection being provided between the transistor structure and the diode structure in th... | 04/10/2012 |
| 8129745 | Method of manufacturing an instant pulse filter using anodic oxidation and instant pulse filter manufactured by said method The instant pulse filter according to the present invention, which may cause a malfunction or a short life span of a semiconductor device, is made using an aluminum anodic oxidation, comprising—a first step for forming an aluminum thin film layer on an upper side ... | 03/06/2012 |
| 8101970 | Semiconductor device A semiconductor device of the present invention comprises: a P type semiconductor substrate, an N-well, a first P+ diffusion region, a second P+ diffusion region, a Schottky diode, a first N+ diffusion region, a second N+ diffusion region, a third P+ diffusion regio... | 01/24/2012 |
| 8093623 | Semiconductor integrated circuit Disclosed herein is a semiconductor integrated circuit including a protected circuit; and a protection element formed on the same semiconductor substrate as the protected circuit and adapted to protect the protected circuit, wherein the protection element includes t... | 01/10/2012 |
| 8089095 | Two terminal multi-channel ESD device and method therefor In one embodiment, a two terminal multi-channel ESD device is configured to include a zener diode and a plurality of P-N diodes. In another embodiment, the ESD devices has an asymmetrical characteristic. ... | 01/03/2012 |
| 8080832 | Semiconductor device for electrostatic discharge protection The invention provides an electrostatic discharge (ESD) protection device for protecting the internal circuitry of an integrated circuit chip from ESD current. The device includes a natively doped substrate having high resistance. A first well is formed in the subst... | 12/20/2011 |
| 8063412 | Semiconductor device with dummy pattern within active region and method of manufacturing the same A semiconductor device includes a semiconductor substrate having an active region, a plurality of gate electrodes formed on the active region with a gate insulating film therebetween, and a dummy pattern formed on the active region in at least a part thereof between... | 11/22/2011 |
| 8053809 | Device including high-K metal gate finfet and resistive structure and method of forming thereof A device is provided that in one embodiment includes a substrate having a first region and a second region, in which a semiconductor device is present on a dielectric layer in the first region of the substrate and a resistive structure is present on the dielectric l... | 11/08/2011 |
| 8053808 | Layouts for multiple-stage ESD protection circuits for integrating with semiconductor power device A semiconductor power device supported on a semiconductor substrate includes a plurality of transistor cells each having a source and a drain with a gate to control an electric current transmitted between the source and the drain. The semiconductor further includes ... | 11/08/2011 |
| 8049249 | Integrated circuit devices with ESD protection in scribe line, and methods for fabricating same A semiconductor wafer with an electrostatic discharge (ESD) protective device is disclosed. The semiconductor wafer includes first and second adjacent semiconductor die regions, a protective device in a scribe line region between the first and second die regions, an... | 11/01/2011 |
| 8049250 | Circuit and method for power clamp triggered dual SCR ESD protection Circuit and method for RC power clamp triggered dual SCR ESD protection. In an integrated circuit, a protected pad is coupled to an upper SCR circuit and a lower SCR circuit; and both are coupled to the RC power clamp circuit, which is coupled between the positive v... | 11/01/2011 |
| 8039868 | Structure and method for an electrostatic discharge (ESD) silicon controlled rectifier (SCR) structure A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes first and second silicon controlled rectifiers (SCRs) formed in a substrate. Further, the first and the second SCRs each incl... | 10/18/2011 |
| 8030683 | Protection circuit A protection circuit according to an embodiment of the present invention is provided between a first terminal and a second terminal and includes: a capacitor element having one end connected to the second terminal; and a multi-cathode thyristor formed on a semicondu... | 10/04/2011 |
| 8010927 | Structure for a stacked power clamp having a BigFET gate pull-up circuit Design structure for an electrostatic discharge (ESD) protection circuit for protecting an integrated circuit chip from an ESD event. The design structure for the ESD protection circuit includes a stack of BigFETs, a BigFET gate driver for driving the gates of the B... | 08/30/2011 |
| 8004009 | Trench MOSFETS with ESD Zener diode A semiconductor power device with Zener diode for providing an electrostatic discharge (ESD) protection and a thick insulation layer to insulate the Zener diode from a doped body region. The semiconductor power device further includes a Nitride layer underneath the ... | 08/23/2011 |
| 7985983 | Semiconductor ESD device and method of making same A semiconductor device includes an ESD device region disposed within a semiconductor body of a first semiconductor type, an isolation region surrounding the ESD device region, a first doped region of a second conductivity type disposed at a surface of the semiconduc... | 07/26/2011 |
| 7973334 | Localized trigger ESD protection device The present invention provides an ESD device to reduce the total triggering current without increasing the overshoot voltage. This is achieved by localizing the triggering current, such that the local current density remains high enough to trigger the ESD device. Th... | 07/05/2011 |
| 7968906 | Substrate-triggered bipolar junction transistor and ESD protection circuit An ESD protection circuit using a novel substrate-triggered lateral bipolar junction transistor (STLBJT) for providing a discharging path between power rails. The ESD protection circuit comprises an ESD detection circuit and a STLBJT device. The STLBJT device formed... | 06/28/2011 |
| 7968907 | Low capacitance over-voltage protection thyristor device An over-voltage protection thyristor has reduced junction capacitance making it suitable for use in high bandwidth applications. The reduced capacitance is achieved through the introduction of a deep base region. The deep base region has a graded doping concentratio... | 06/28/2011 |
| 7968908 | Bidirectional electrostatic discharge protection structure for high voltage applications Semiconductor structures providing protection against electrostatic events of both polarities are provided. A pair of p-n junctions is provided underneath a shallow trench isolation portion between a first-conductivity-type well and each of a signal-side second-cond... | 06/28/2011 |
| 7964893 | Forming ESD diodes and BJTs using FinFET compatible processes A method of forming an electrostatic discharging (ESD) device includes forming a first and a second semiconductor fin over a substrate and adjacent to each other; epitaxially growing a semiconductor material on the first and the second semiconductor fins, wherein a ... | 06/21/2011 |
| 7948006 | Photodiode with high ESD threshold A photodetector with an improved electrostatic discharge damage threshold is disclosed, suitable for applications in telecommunication systems operating at elevated data rates. The photodetector may be a PIN or an APD fabricated in the InP compound semiconductor sys... | 05/24/2011 |
| 7943960 | Integrated circuit arrangement including a protective structure An integrated circuit arrangement. In one embodiment, the arrangement includes at least one first semiconductor zone of a first conduction type which is doped more highly than the basic doping of a first semiconductor layer and which is arranged at a distance from a... | 05/17/2011 |
| 7943959 | Low capacitance semiconductor device A surge protection device with small-area buried regions (38, 60) to minimize the device capacitance. The doped regions (38, 60) are formed either in a semiconductor substrate (34), or in an epitaxial layer (82), and then an epitaxial lay... | 05/17/2011 |
| 7943958 | High holding voltage LVTSCR-like structure In an ESD protection device making use of a LVTSCR structure, the holding voltage is increased by forming diodes in the p-well of the LVTSCR structure. This provides an alternative current path at high currents and provides a defined voltage drop thereby increasing ... | 05/17/2011 |
| 7939851 | Electronic device with an amplifier output stage and an over-current detection means An electronic device with an amplifier output stage (OS) and an over-current detection means (OCDM) for detecting an output over-current (IHS, ILS) of the output stage (OS) is provided. The over-current detection means (OCDM) comprises a level detection means (LDM) ... | 05/10/2011 |
| 7897999 | Semiconductor integrated circuit device A semiconductor integrated circuit device includes a power supply line connected to a power supply terminal, a ground line connected to a ground terminal and a plurality of capacitors connected in parallel between the power supply line and the ground line. The plura... | 03/01/2011 |
| 7888703 | ESD protection apparatus and electrical circuit including same An ESD protection apparatus includes a substrate, a transistor structure arranged in the substrate, and a diode structure arranged in the substrate, a high-resistance electrical connection being provided between the transistor structure and the diode structure in th... | 02/15/2011 |
| 7888704 | Semiconductor device for electrostatic discharge protection A semiconductor device for electrostatic discharge protection is disclosed, and at least comprises a high-voltage parasite silicon controlled rectifier (HVSCR) and a diode. The HVSCR has an anode and a cathode, and the cathode of HVSCR is coupled to a ground. The di... | 02/15/2011 |
| 7880195 | Electrostatic discharge protection device and related circuit An ESD protection device comprises a P-type substrate, a first substrate-triggered silicon controlled rectifiers (STSCR) disposed in the P-type substrate and a second STSCR disposed in the P-type substrate. The first STSCR comprises a first N-well, a first P-well, a... | 02/01/2011 |
| 7875904 | Protection circuit In a protection circuit of an input/output terminal I/O, three types of PNP bipolar transistors are included. In a first PNP type bipolar transistor 10A, the emitter thereof is connected to the input/output terminal I/O, the base thereof is connected to a hig... | 01/25/2011 |
| 7855399 | Protection device of programmable semiconductor surge suppressor having deep-well structure A protection device of programmable semiconductor surge suppressor having deep-well structure is provided comprising one, two or four protection units, each of which is composed of a PN-junction diode, a PNPN-type thyristor and a NPN-type triode connected with each ... | 12/21/2010 |
| 7847317 | Low-capacitance electrostatic discharge protection diodes A reduced capacitance diode. A first conductive layer provides conductive interconnects for pad and supply diffusion regions in a diode. A second conductive layer includes a first portion to couple the pad diffusion regions to a pad and a second portion to couple th... | 12/07/2010 |
