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| Number | Title | Issue Date |
| 8138495 | Film stress management for MEMS through selective relaxation An apparatus comprising a microelectromechanical system. The microelectromechanical system includes a crystalline structural element having dislocations therein. For at least about 60 percent of adjacent pairs of the dislocations, direction vectors of the dislocatio... | 03/20/2012 |
| 8129711 | Nitride semiconductor light emitting device and fabrication method thereof The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-... | 03/06/2012 |
| 7968868 | Optical semiconductor device and manufacturing method of the same A side barrier is provided between columnar dots each constituted by directly stacking respective quantum dots in seven or more layers. Out of respective side barrier layers composing the side barrier, each of the lower side barrier layers (four layers of the underm... | 06/28/2011 |
| 7786467 | Three-dimensional nanoscale crossbars Various embodiments of the present invention include three-dimensional, at least partially nanoscale, electronic circuits and devices in which signals can be routed in three independent directions, and in which electronic components can be fabricated at junctions in... | 08/31/2010 |
| 7755078 | Silicon single electron device A silicon integrated circuit device comprising a near intrinsic silicon substrate in which there are one or more ohmic contact regions. An insulating layer lies above the substrate, and on top of the insulating layer is a lower layer of one or more aluminium gates. ... | 07/13/2010 |
| 7732806 | Refractive index variable element A refractive index variable element has a structure including a solid matrix, and one or more types of quantum dots dispersed in the solid matrix and having discrete occupied and unoccupied electron energy levels. The quantum dots perform a function of generating a ... | 06/08/2010 |
| 7663139 | Optical semiconductor device and manufacturing method of the same A side barrier is provided between columnar dots each constituted by directly stacking respective quantum dots in seven or more layers. Out of respective side barrier layers composing the side barrier, each of the lower side barrier layers (four layers of the underm... | 02/16/2010 |
| 7605390 | Programmable photolithographic mask based on semiconductor nano-particle optical modulators Nano-particles are provided with control circuitry to form a programmable mask. The optical characteristics of the nano-particles change to provide patterned light. Such patterned light can be used for example to expose a photoresist on a semiconductor wafer for pho... | 10/20/2009 |
| 7554109 | Quantum dot optoelectronic devices with nanoscale epitaxial lateral overgrowth and methods of manufacture Optoelectronic devices are provided that incorporate quantum dots as the electroluminescent layer in an inorganic wide-bandgap heterostructure. The quantum dots serve as the optically active component of the device and, in multilayer quantum dot embodiments, facilit... | 06/30/2009 |
| 7415185 | Buried-waveguide-type light receiving element and manufacturing method thereof A buried-waveguide light detecting element includes an n-type cladding layer on a Fe-InP substrate, a waveguide on a portion of the n-type cladding layer, and in which an n-type light guide layer, an i-light guide layer having a refractive index equal to or higher t... | 08/19/2008 |
| 7411187 | Ion trap in a semiconductor chip A micrometer-scale ion trap, fabricated on a monolithic chip using semiconductor micro-electromechanical systems (MEMS) technology. A single 111Cd+ ion is confined, laser cooled, and the heating measured in an integrated radiofrequency trap etched from a doped galli... | 08/12/2008 |
| 7408186 | Controlled alignment catalytically grown nanostructures Systems and methods are described for controlled alignment of catalyticaly grown nanostructures in a large-scale synthesis process. A composition includes an elongated nanostructure including a first segment defining a first axis and a second segment coupled to the ... | 08/05/2008 |
| 7402832 | Quantum dots of group IV semiconductor materials The invention relates to a quantum dot. The quantum dot comprises a core including a semiconductor material Y selected from the group consisting of Si and Ge. The quantum dot also comprises a shell surrounding the core. The quantum dot is substantially defect free s... | 07/22/2008 |
| 7403256 | Flat panel display and drive chip thereof A flat panel display mainly includes a display panel and a plurality of drive IC chips mounted on the display panel by a chip-on-glass method. The display panel includes a plurality of electrode terminals, a plurality of external terminals and a plurality of first c... | 07/22/2008 |
| 7382017 | Nano-enabled memory devices and anisotropic charge carrying arrays Methods and apparatuses for nanoenabled memory devices and anisotropic charge carrying arrays are described. In an aspect, a memory device includes a substrate, a source region of the substrate, and a drain region of the substrate. A population of nanoelements is de... | 06/03/2008 |
| 7378328 | Method of fabricating memory device utilizing carbon nanotubes A fast, reliable, highly integrated memory device formed of a carbon nanotube memory device and a method for forming the same, in which the carbon nanotube memory device includes a substrate, a source electrode, a drain electrode, a carbon nanotube having high elect... | 05/27/2008 |
| 7372068 | QWIP with electron launcher for reducing dielectric relaxation effect in low background conditions A QWIP structure is disclosed that includes a graded emitter barrier and can further be configured with a blocked superlattice miniband. The graded emitter barrier effectively operates to launch dark electrons into the active quantum well region, thereby improving r... | 05/13/2008 |
| 7366220 | Tunable laser A tunable laser includes an optical waveguide alternately including a gain waveguide portion and a wavelength controlling waveguide portion, and a diffraction grating. The diffraction grating includes a gain diffraction grating and a wavelength controlling diffracti... | 04/29/2008 |
| 7361420 | Structure, magnetic recording medium, and method of producing the same To provide a filmy structure of a nanometer size having a phase-separated structure effective for the case where a compound can be formed between two kinds of materials. A structure constituted by a first member containing a compound between an element A except both... | 04/22/2008 |
| 7362938 | Optical fiber with quantum dots Holey optical fibers (e.g. photonic fibers, random-hole fibers) are fabricated with quantum dots disposed in the holes. The quantum dots can provide light amplification and sensing functions, for example. When used for sensing, the dots will experience altered optic... | 04/22/2008 |
| 7358525 | Quantum dots of group IV semiconductor materials The invention relates to a quantum dot. The quantum dot comprises a core including a semiconductor material Y selected from the group consisting of Si and Ge. The quantum dot also comprises a shell surrounding the core. The quantum dot is substantially defect free s... | 04/15/2008 |
| 7358137 | Memory devices including barrier layers and methods of manufacturing the same Memory devices and methods of manufacturing the same are provided. Memory devices may include a substrate, a source region and a drain region and a gate structure. The gate structure may be in contact with the source and drain regions, and may include a barrier laye... | 04/15/2008 |
| 7358191 | Method for decreasing sheet resistivity variations of an interconnect metal layer According to one exemplary embodiment, a method includes a step of forming a number of trenches in a dielectric layer, where the dielectric layer is situated over a wafer. The method further includes forming a metal layer over the dielectric layer and in the trenche... | 04/15/2008 |
| 7358524 | Nanowire device and method of fabricating the same A nanowire device having a structure allowing for formation of p-type and n-type doped portions in a nanowire, and a method of fabricating the same. The nanowire device includes a substrate, a first electrode layer formed on the substrate, a second electrode layer f... | 04/15/2008 |
| 7358523 | Method and structure for deep well structures for long wavelength active regions Subwells are added to quantum wells of light emitting semiconductor structures to shift their emission wavelengths to longer wavelengths. Typical applications of the invention are to InGaAs, InGaAsSb, InP and GaN material systems, for example. ... | 04/15/2008 |
| 7354780 | Semiconductor light emitting devices and methods A method for producing an optical output, including the following steps: providing first and second electrical signals; providing a bipolar light-emitting transistor device that includes collector, base, and emitter regions; providing a collector electrode coupled w... | 04/08/2008 |
| 7355238 | Nonvolatile semiconductor memory device having nanoparticles for charge retention A nonvolatile semiconductor memory device including a source region and a drain region formed on a surface of a semiconductor substrate, a channel-forming region formed so as to connect the source region and the drain region or so as to be sandwiched between the sou... | 04/08/2008 |
| 7351993 | Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon Atomic layer epitaxy (ALE) is applied to the fabrication of new forms of rare-earth oxides, rare-earth nitrides and rare-earth phosphides. Further, ternary compounds composed of binary (rare-earth oxides, rare-earth nitrides and rare-earth phosphides) mixed with sil... | 04/01/2008 |
| 7348201 | Creation of anisotropic strain in semiconductor quantum well Methods and devices for creating an anisotropic strain in a semiconductor quantum well structure to induce anisotropy thereof are disclosed herein. Initially, a substrate is provided, and a quantum well structure formed upon the substrate. A first crystalline layer ... | 03/25/2008 |
| 7338858 | Methods of fabricating nonvolatile memory using a quantum dot A method of fabricating a nonvolatile memory using quantum dots is disclosed. An example method sequentially forms a first insulation layer and a second insulation layer on a substrate where a predetermined device is formed. The example method also forms a hard mask... | 03/04/2008 |
| 7335908 | Nanostructures and methods for manufacturing the same A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps.... | 02/26/2008 |
| 7332211 | Layered materials including nanoparticles A composition includes a layer of nanoparticles and a layer of a second material. ... | 02/19/2008 |
| 7329387 | Field-effect transistor, sensor using it, and production method thereof A sensor which has high measuring sensitivity and is excellent in response is provided by forming a porous film in a sensitive section of a field-effect transistor. It comprises a porous body, which is formed on a sensitive section (here, a gate insulating film) of ... | 02/12/2008 |
| 7320854 | Radiation sensitive refractive index changing composition, pattern forming method and optical material There is provided a radiation sensitive refractive index changing composition containing an inorganic oxide particle, a polymerizable compound, a radiation sensitive decomposer and an escapable compound. The radiation sensitive decomposer decomposes upon exposure to... | 01/22/2008 |
| 7319247 | Light emitting-diode chip and a method for producing same An LED chip comprising an electrically conductive and radioparent substrate, in which the epitaxial layer sequence (3) is provided on substantially the full area of its p-side (9) with a reflective, bondable p-contact layer (6). The substrate ( | 01/15/2008 |
| 7316949 | Integrating n-type and p-type metal gate transistors At least a p-type and n-type semiconductor device deposited upon a semiconductor wafer containing metal or metal alloy gates. More particularly, a complementary metal-oxide-semiconductor (CMOS) device is formed on a semiconductor wafer having n-type and p-type metal... | 01/08/2008 |
| 7312524 | Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made A method for fabricating a thermally stable ultralow dielectric constant film including Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing a plasma enhanced chemical vapor deposition (“PECVD”) process is disclosed. Electronic de... | 12/25/2007 |
| 7313293 | Optical power monitoring apparatus, optical power monitoring method, and light receiving device An optical power monitoring apparatus according to an aspect of the present invention has an input optical waveguide, a light receiver, and an output optical waveguide. The input optical waveguide has a light entrance end and a light exit end. The input optical wave... | 12/25/2007 |
| 7312137 | Transistor with shallow germanium implantation region in channel A transistor and a structure thereof, wherein a very shallow region having a high dopant concentration of germanium is implanted into a channel region of a transistor at a low energy level, forming an amorphous germanium implantation region in a top surface of the w... | 12/25/2007 |
| 7310363 | Integrated wavelength tunable single and two-stage all-optical wavelength converter A semiconductor tunable laser (10) and an interferometer (12) coupled to the tunable laser (10) are monolithically fabricated in a semiconductor heterostructure. The laser also comprises a buried ridge stripe waveguide laser. The interferometer ... | 12/18/2007 |
