Celebrity Inventors
Comic actor Danny Kaye received patent D166,807 for the co-design of "Blowout Toy or the Like". It's similar to one of those toys that unravels when you blow into at a birthday party except Kaye's has three blowouts going in different directions, not just one.
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| Number | Title | Issue Date |
| 7420228 | Bipolar transistor comprising carbon-doped semiconductor A bipolar transistor comprising a collector region of a first conduction type, and a subcollector region of the first conduction type at a first side of the collector region. The transistor further includes a base region of the second conduction type provided at a s... | 09/02/2008 |
| 7154174 | Power supply packaging system A packaging system for a high current, low voltage power supply. The power supply uses bare die power FETs which are directly mounted to a thermally conductive substrate by a solder attachment made to the drain electrode metallization on the back side of the FETs. T... | 12/26/2006 |
| 7129577 | Power supply packaging system A packaging system for a high current, low voltage power supply. The power supply uses bare die power FETs which are directly mounted to a thermally conductive substrate by a solder attachment made to the drain electrode metallization on the back side of the FETs. T... | 10/31/2006 |
| 6963088 | Semiconductor component A semiconductor component is arranged in a semiconductor body and has at least one integrated radially symmetrical lateral resistance having a location-dependent sheet resistance, the radial dependence of which is preferably configured such that the differential res... | 11/08/2005 |
| 6603154 | Semiconductor package and method of manufacturing semiconductor package A lower electrode of a semiconductor is directly connected to a heat sink, while a first electrode and a second electrode are connected to a plate-shaped second conductor by means of a first conductor. Radiated heat of the semiconductor is directly conduc... | 08/05/2003 |
| 6495865 | Microcathode with integrated extractor A microcathode which integrates both an electron emitter, or cathode, and an extractor electrode. The electron emitter is attached to the back side of a thin film microstructure on a first surface of a substrate. Electrons are emitted from the electron em... | 12/17/2002 |
| 6169292 | Thin film type monolithic semiconductor device A monolithic type active matrix semiconductor device comprises a substrate having an insulating surface, a first plurality of thin film transistors formed on the substrate, each having a first channel region comprising an amorphous silicon semiconductor f... | 01/02/2001 |
| 6066864 | Thyristor with integrated dU/dt protection Given too great a dU/dt load of a thyristor, this can trigger in uncontrolled fashion in the region of the cathode surface. Since the plasma only propagates poorly there and the current density consequently reaches critical values very quickly, there is t... | 05/23/2000 |
| 6033924 | Method for fabricating a field emission device A method for fabricating a field emission device (200) includes the steps of forming on the surface of a substrate (110) a cathode (112), forming on the cathode (112) a dielectric layer (114), forming an emitter well (115) in the dielectric layer (114), f... | 03/07/2000 |
| 5818074 | Smooth switching thyristor A semiconductor thyristor has multiple different semiconductor layers with regions arranged in predetermined configurations to cause a plasma of carriers to flow in an expanding volume over a finite time to reach a full conduction condition, after the thy... | 10/06/1998 |
| 5736755 | Vertical PNP power device with different ballastic resistant vertical PNP transistors Disclosed are devices having emitters having resistive emitter diffusion sections are in a radial pattern. Such devices include vertical PNP power devices. The radial pattern of holes defines resistive emitter diffusion sections between adjacent holes. Th... | 04/07/1998 |
| 5654562 | Latch resistant insulated gate semiconductor device An insulated gate semiconductor device (10) is fabricated by providing at least one ballast resistor (40) having a sheet resistance of at least one square. The ballast resistor (40) is formed in the emitter region (17) between two adjacent portions of the... | 08/05/1997 |
| 5637886 | Thyristor with improved dv/dt resistance When an abrupt voltage noise is applied across an anode electrode (A) and a cathode electrode (K), displacement currents (I10 to I30) which are responsive to junction capacitances (C10 to C30) of respective unit... | 06/10/1997 |
| 5554863 | Gate turn-off thyristor A gate turn-off thyristor including: an n-type emitter semiconductor layer divided into a plurality of n-type areas; a p-type base semiconductor layer which cooperates with the n-type emitter semiconductor layer to form a first main circular surface; an n... | 09/10/1996 |
| 5455434 | Thyristor with breakdown region A thyristor includes a semiconductor body with a surface. The semiconductor body has an inner zone of a first conduction type; a cathode-side base zone of a second conduction type opposite the first type, the base zone having a recess formed therein; a la... | 10/03/1995 |
| 4974047 | Light triggered thyristor A light triggered thyristor having a light-receiving structure which has a light-receiving surface for receiving incident light on its top surface. The light-receiving structure comprises a base region of a first electrically conductive type exposed in th... | 11/27/1990 |
| 4792839 | Semiconductor power circuit breaker structure obviating secondary breakdown A semiconductor power circuit breaker has several emitter zones of a width (b) less than 30 microns. The semiconductor device may be in the form of a switching transistor or a gate turn off (GTO) thyristor. The spacing (a) of the emitter zones is less tha... | 12/20/1988 |
| 4786959 | Gate turn-off thyristor A semiconductor substrate of the shape of a disc possesses a first main surface and a second main surface. The semiconductor substrate consists of an emitter layer on the side of the cathode, a second base layer, a first base layer, and an emitter layer o... | 11/22/1988 |
| 4760438 | Thyristor emitter short configuration A thyristor comprising a semiconductor body having at least four sequential layers of alternatingly opposite conductivity types. One of the layers is an emitter zone and the contiguous layer of opposite conductivity type is a base zone. A control electrod... | 07/26/1988 |
| 4758871 | Thyristor with multiple groups of insulated control electrodes A thyristor comprising a semiconductor body which has a plurality of emitter zones formed by parts of a first electrode, a first base adjacent to the emitter zones, an emitter contacted by a second electrode, and a second base adjacent to the emitter and ... | 07/19/1988 |
| 4757025 | Method of making gate turn off switch with anode short and buried base A GTO switch is provided in which the upper base layer (gate) is formed by a diffusion step. An epitaxial layer grown over the upper base layer contains cathode and gate diffusions which are separated by an undiffused gap. This "buried base" technique pro... | 07/12/1988 |
| 4742382 | Semiconductor component A semiconductor component, including a GTO thyristor and integrally formed reverse conducting antiparallel diode, which can be used for turn-off of currents of 20 A . . . >2,000 A and off-state voltages of 600 V . . . >4,500 V in power electronics for dri... | 05/03/1988 |
| 4717947 | Semiconductor device turned on and off by light A semiconductor device has a main GTO thyristor section, an auxiliary GTO thyristor section and a MOS transistor section. The main GTO thyristor section is turned on and off in accordance with a gate signal supplied to its gate terminal. The auxiliary GTO... | 01/05/1988 |
| 4713679 | Reverse blocking type semiconductor device A reverse blocking type semiconductor device capable of being rapidly turned off is disclosed in which a semiconductor substrate includes four semiconductor layers in a region sandwiched between a pair of principal surfaces in such a manner that adjacent ... | 12/15/1987 |
| 4710792 | Gate turn-off thyristor A gate turn-off thyristor comprises a semiconductor wafer (8) structured by an N-base layer (8c), a P-base layer (8b) adjacent to one side of the N-base layer (8c), an N-emitter layer 8d adjacent to the other side of the N-base layer (8c), and a plurality... | 12/01/1987 |
| 4641162 | Current limited insulated gate device A current limited insulated gate transistor (IGT) is disclosed wherein the individual cells are rectangular and each has four discrete, mutually spaced emitter regions to provide a reduced gate periphery. Each cell lacks emitter portions at the cell corne... | 02/03/1987 |
| 4639762 | MOSFET with reduced bipolar effects A MOSFET device comprises a semiconductor wafer which includes a drain region of first conductivity type contiguous with a wafer surface. A diffused body region of second conductivity type extends into the wafer from the wafer surface so as to form a body... | 01/27/1987 |
| 4626888 | Gate turn-off thyristor In accordance with the present invention, a plurality of strip-shaped emitter layers on the cathode side are radially arranged on one main surface of the semiconductor substrate while forming a plurality of rings. A gate electrode is in ohmic contact with... | 12/02/1986 |
| 4595939 | Radiation-controllable thyristor with multiple, non-concentric amplified stages A radiation-controllable thyristor is disclosed, which includes an electrical trigger main thyristor having four semiconductor layers each having mutually different conductivity types, and a plurality of stages of pilot thyristors commonly having three ot... | 06/17/1986 |
| 4542398 | Semiconductor devices of multi-emitter type A multi-emitter type semiconductor device, namely, a semiconductor device having an arrangement in which a majority of emitter regions are divided by a gate region and surrounded thereby. In the semiconductor device, a member adapted to apply an external ... | 09/17/1985 |
| 4529999 | Gate controlled switch An improved semiconductor device, particularly a gate controlled switch is provided by optimally fitting an involute spiral cathode-gate structure into a substantially square device. 4N cathode-gate branches radiate from a central gate portion and interse... | 07/16/1985 |
| 4500903 | Semiconductor GTO switching device with radially elongated cathode emitter regions of increasing length A gate turn-off thyristor in which a cathode-emitter layer is divided into a plurality of strip-like regions which are radially arrayed on a major surface of a semiconductor substrate in a coaxial multi-ring pattern including a plurality of coaxially arra... | 02/19/1985 |
| 4491742 | Semiconductor switch device A self-turn-off type semiconductor switch comprising a gate-reverse biasing thyristor and a transistor connected in parallel to each other wherein the load current is shunted to the transistor, thus causing the thyristor to be turned off.... | 01/01/1985 |
| 4486768 | Amplified gate turn-off thyristor A gate controlled semiconductor device is provided having a main electrode member consisting of a cathode electrode assembly formed in one end layer of a wafer of semiconductive material and an anode electrode assembly formed in other end layer of said wa... | 12/04/1984 |
| 4443810 | Gate turn-off amplified thyristor with non-shorted auxiliary anode A gate turn-off thyristor is disclosed which includes a main thyristor having a shorted emitter structure on the anode side thereof and an auxiliary thyristor having a shorted emitter structure on the cathode side thereof and wherein the cathode of the au... | 04/17/1984 |
| 4298882 | Multilayer semiconductor element A multilayer semiconductor element with improved dynamic electric parameters obtained by a suitable geometric arrangement of the control zone and by the use of a controlled emitter.... | 11/03/1981 |
| 4291325 | Dual gate controlled thyristor with highly doped cathode base grid covered with high resistivity base layer A gate controlled semiconductor device comprises two main electrode members provided on a wafer having at least one junction formed between two alternately different conductivity typed semiconductive layers and a control electrode member in which the same... | 09/22/1981 |
| 4238761 | Integrated gate assisted turn-off, amplifying gate thyristor with narrow lipped turn-off diode An integrated amplifying gate thyristor is provided with an integral diode in the thyristor structure in the same semiconductor body. The diode provides gate assist turn-off capability with the same gate electrode used to turn-on a pilot thyristor of the ... | 12/09/1980 |
| 4223332 | Thyristor having an anode transverse field emitter A thyristor exhibiting improved maximum current rise rates as a result of the relocation of the ignition front from the edge of the cathode emitter zone to inner cathode emitter areas. This relocation is effected by providing a relatively light doping of ... | 09/16/1980 |
| 4177478 | Amplifying gate thyristor with gate turn-off (G.T.O.) The invention relates to an amplifying gate thyristor with gate turn-off (G.T.O.) for electric power switching. A P+ type conduction layer is disposed in the thickness of the base P1, forming a buried grate under the main emitter and penetrating down to a... | 12/04/1979 |
