Class 257/165 - Laterally symmetric regions

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the plural emitters are located in
No. of patents: 34
Last issue date: 09/02/2008

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Number	Title	Issue Date
7420228	Bipolar transistor comprising carbon-doped semiconductor A bipolar transistor comprising a collector region of a first conduction type, and a subcollector region of the first conduction type at a first side of the collector region. The transistor further includes a base region of the second conduction type provided at a s...	09/02/2008
7414273	Two-dimensional silicon controlled rectifier A two-dimensional silicon controlled rectifier (2DSCR) having the anode and cathode forming a checkerboard pattern. Such a pattern maximizes the anode to cathode contact length (the active area) within a given SCR area, i.e., effectively increasing the SCR width. In...	08/19/2008
7378328	Method of fabricating memory device utilizing carbon nanotubes A fast, reliable, highly integrated memory device formed of a carbon nanotube memory device and a method for forming the same, in which the carbon nanotube memory device includes a substrate, a source electrode, a drain electrode, a carbon nanotube having high elect...	05/27/2008
7196351	Forming phase change memories Phase change memories may exhibit improved properties and lower cost in some cases by forming the phase change material layers in a planar configuration. A heater may be provided below the phase change material layers to appropriately heat the material to induce the...	03/27/2007
7170106	Power semiconductor device A power semiconductor device includes trenches disposed in a first base layer of a first conductivity type at intervals to partition main and dummy cells, at a position remote from a collector layer of a second conductivity type. In the main cell, a second base laye...	01/30/2007
7078740	Power semiconductor device A power semiconductor device includes trenches disposed in a first base layer of a first conductivity type at intervals to partition main and dummy cells, at a position remote from a collector layer of a second conductivity type. In the main cell, a second base laye...	07/18/2006
6906908	Semiconductor device and method of manufacturing the same Disclosed is a semiconductor device comprising a semiconductor substrate, a capacitor provided above the semiconductor substrate, an insulation region which covers the capacitor and has a first hole and a second hole, the first hole being provided apart from the cap...	06/14/2005
6809349	Power semiconductor device A power semiconductor device includes trenches disposed in a first base layer of a first conductivity type at intervals to partition main and dummy cells, at a position remote from a collector layer of a second conductivity type. In the main cell, a second base laye...	10/26/2004
6483188	Rf integrated circuit layout A radio-frequency (RF) integrated circuit is described. In one embodiment, the IC comprises multiple metal layers forming multiple transistors on a non-epitaxial substrate. The transistors are step and mirror symmetric. Also, the RF signal lines are on a ...	11/19/2002
6033924	Method for fabricating a field emission device A method for fabricating a field emission device (200) includes the steps of forming on the surface of a substrate (110) a cathode (112), forming on the cathode (112) a dielectric layer (114), forming an emitter well (115) in the dielectric layer (114), f...	03/07/2000
5793066	Base resistance controlled thyristor structure with high-density layout for increased current capacity An insulated gate base resistance controlled thyristor with a high controllable current capability is described. The device has a high density of MOS-channels modulating the resistance of the base region of the NPN transistor of the thyristor structure. T...	08/11/1998
5731605	Turn-off power semiconductor component with a particular ballast resistor structure A power semiconductor component which can be turned off by gate control and whose semiconductor body has a plurality of unit cells arranged side by side which are comprised of a p-emitter region (1) adjacent to the anode, an adjoining lightly doped n-base...	03/24/1998
5710442	Semiconductor device and method of manufacturing same A semiconductor device sets an impurity density of a p base layer in a bevel end-face region to a density lower than that in an operating region and has a parasitic channel preventive region provided between the bevel end-face region and the operating reg...	01/20/1998
5654562	Latch resistant insulated gate semiconductor device An insulated gate semiconductor device (10) is fabricated by providing at least one ballast resistor (40) having a sheet resistance of at least one square. The ballast resistor (40) is formed in the emitter region (17) between two adjacent portions of the...	08/05/1997
5525816	Insulated gate semiconductor device with stripe widths There is disclosed an insulated gate bipolar transistor which includes a p type semiconductor region (11) formed in a surface of an n- semiconductor layer (3) by double diffusion in corresponding relation to a p type base region (4) of an IGBT ...	06/11/1996
5485024	Electrostatic discharge circuit An ESD protection circuit which provides protection for CMOS devices against ESD potentials of up to about 10 kV is provided. The ESD protection circuit is able to provide protection against both positive-going and negative-going high energy electrical tr...	01/16/1996
5323044	Bi-directional MOSFET switch A bi-directional switch includes a well region of a first conductivity type placed within a substrate. A first region of second conductivity type is placed within the well. A second contact region of second conductivity type is placed within the well. A d...	06/21/1994
5306952	Multilayer aluminum-containing interconnection structure of semiconductor device In a multi-layer aluminum interconnection structure, improved reliability as well as a stable via-hole resistance are achieved by promoting mixing at an interface between aluminum-containing interconnection layers and improving coverage of an upper alumin...	04/26/1994
4931848	Thyristor having increased dI/dt stability A thyristor has a semiconductor body which comprises an n-emitter provided with a first contact in a first principal surface, a p-base adjacent thereto, a p-emitter provided with a second contact in a second principal surface, and an n-base adjacent to th...	06/05/1990
4779126	Optically triggered lateral thyristor with auxiliary region An optically triggered lateral thyristor consists of a plurality of individual lateral thyristor elements connected in parallel. Each element has an active base region which contains a respective cathode region. Each of the base regions is carried in a co...	10/18/1988
4717940	MIS controlled gate turn-off thyristor An MIS controlled gate turn-off thyristor includes a pnpn structure comprised of a first emitter layer, a first base layer, a second base layer and a second emitter layer, and a turn-off MIS transistor for short-circuiting the second base layer to the sec...	01/05/1988
4713679	Reverse blocking type semiconductor device A reverse blocking type semiconductor device capable of being rapidly turned off is disclosed in which a semiconductor substrate includes four semiconductor layers in a region sandwiched between a pair of principal surfaces in such a manner that adjacent ...	12/15/1987
4682195	Insulated gate device with configured emitter contact pad The construction of a semiconductor insulated gate device (IGT) is altered to avoid cell latching problems assisted with "hot spot" sites where an atypically high density reverse current tends to flow. IGT cells adjacent these sites are totally or partial...	07/21/1987
4651189	Semiconductor device provided with electrically floating control electrode A gate turn-off thyristor and a transistor are disclosed, each of which comprises: a semiconductor substrate including at least three semiconductor layers between a pair of principal surfaces, adjacent ones of the semiconductor layers being different in c...	03/17/1987
4646122	Semiconductor device with floating remote gate turn-off means A semiconductor device such as a transistor or gate turn-off thyristor provided with a control electrode for improving the current cut-off performance, is disclosed in which an emitter layer of a semiconductor substrate is formed of a plurality of strip-s...	02/24/1987
4635087	Monolithic bipolar SCR memory cell Bipolar memory arrays having lower quiescent leakage and higher switching speed are constructed by using coupled SCRs formed from vertical PNP and NPN devices. Buried collectors for the PNP and NPN devices are provided within the same isolation tub. A P t...	01/06/1987
4618781	Gate turn-off thyristor construction A gate turn-off thyristor comprising, a first emitter layer of one conductivity type, a main base layer of another conductivity type connected to said first emitter layer and a control base layer of the first conductivity type connected to the main base l...	10/21/1986
4491742	Semiconductor switch device A self-turn-off type semiconductor switch comprising a gate-reverse biasing thyristor and a transistor connected in parallel to each other wherein the load current is shunted to the transistor, thus causing the thyristor to be turned off....	01/01/1985
4486768	Amplified gate turn-off thyristor A gate controlled semiconductor device is provided having a main electrode member consisting of a cathode electrode assembly formed in one end layer of a wafer of semiconductive material and an anode electrode assembly formed in other end layer of said wa...	12/04/1984
4356503	Latching transistor A latching transistor is described having both high current capacity and high turn-off gain. A selectively shorted anode emitter provides a four-layer structure capable of sustaining current flow only under those portions of a cathode emitter adjacent int...	10/26/1982
4258377	Lateral field controlled thyristor An improvement in a semiconductor switching device is disclosed which comprises a semiconductor substrate of a first conductivity type, an anode region of a second conductivity type formed in the semiconductor substrate adjacent to a major surface thereof...	03/24/1981
4170020	Gate turn-off thyristor for reducing the on current thereof The invention discloses a gate controlled semiconductor device in which a gate electrode is substantially divided into many pieces. And the semiconductor device comprises a semiconductive element having at least one P-N junction formed by at least a pair ...	10/02/1979
4092703	Gate controlled semiconductor device A gate controlled semiconductor device in which a gate electrode is substantially divided into many pieces. The semiconductor device comprises a semiconductive element having at least one P-N junction formed by at least a pair of P-type diffusion regions ...	05/30/1978
4035825	Thyristor with branched base The present invention pertains to a thyristor device comprising a semiconductor body having at least one emitter zone positioned at a major surface of the body. A base zone shares a portion of the major surface with the emitter zone and extends under the ...	07/12/1977

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Class 257/165 - Laterally symmetric regions