Quotables
"To place a man in a multi-stage rocket and project him into the controlling gravitational field of the moon where the passengers can make scientific observations, perhaps land alive, and then return to earth--all that constitutes a wild dream worthy of Jules Verne. I am bold enough to say that such a man-made voyage will never occur regardless of all future advances."
Lee deForest, American radio pioneer ; 1957
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| Number | Title | Issue Date |
| 8004008 | Semiconductor device The first base electrodes and the first emitter electrodes are all formed like strips, and are alternately arranged in parallel, and the area of the second emitter electrode is expanded to be larger than that of the second base electrode. With this, the number of cu... | 08/23/2011 |
| 7923751 | Bipolar transistor with a low saturation voltage A bipolar transistor with a specific area resistance less than about 500 mOhms·mm2 comprises a first semiconductor region of a first conductivity type defining a collector region (2). A second semiconductor region of a second conductivity type def... | 04/12/2011 |
| 7906796 | Bipolar device and fabrication method thereof In a bipolar device, such as transistor or a thyristor, the emitter layer or the anode layer is formed of two high-doped and low-doped layers, a semiconductor region for suppressing recombination comprising an identical semiconductor having an impurity density ident... | 03/15/2011 |
| 7488993 | Semiconductor device and method of manufacturing the same A semiconductor device, includes: a semiconductor substrate of 100 micrometers or less in thickness; an electrode pattern formed above the semiconductor substrate; and an insulation film of 50 micrometers or greater in thickness residing on parts of the upper surfac... | 02/10/2009 |
| 7439563 | High-breakdown-voltage semiconductor device A high-breakdown-voltage semiconductor device comprises a high-resistance semiconductor layer, trenches formed on the surface thereof in a longitudinal plane shape and in parallel, first regions formed on the semiconductor layer to be sandwiched between adjacent one... | 10/21/2008 |
| 7420228 | Bipolar transistor comprising carbon-doped semiconductor A bipolar transistor comprising a collector region of a first conduction type, and a subcollector region of the first conduction type at a first side of the collector region. The transistor further includes a base region of the second conduction type provided at a s... | 09/02/2008 |
| 7417259 | Light-emitting device having light-emitting elements A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED array... | 08/26/2008 |
| 7332749 | Junction-gate type static induction thyristor and high-voltage pulse generator using such junction-gate type static induction thyristor A compact, inexpensive static induction thyristor (SIThy) which is less likely to be broken down at a high voltage rise-up rate during operation and which is used in a high-voltage pulse generator capable of generating a high-voltage short pulse is provided. Thickne... | 02/19/2008 |
| 7327541 | Operation of dual-directional electrostatic discharge protection device A two-terminal ESD protection structure formed by an arrangement of five adjacent semiconductor regions (112, 114, 116, 118, and 120) of alternating conductivity type provides protection against both positive and negative ESD voltages. The middle semic... | 02/05/2008 |
| 7312483 | Thin film transistor device and method of manufacturing the same A semiconductor film is formed on a substrate. Subsequently, a resist film is formed on the semiconductor film, and dry etching is performed to the semiconductor film using the resist film as a mask. Due to the dry etching, the edge portion of the semiconductor film... | 12/25/2007 |
| 7282743 | Light-emitting device having light-emitting elements A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED array... | 10/16/2007 |
| 7258590 | Electron emitting device using carbon fiber; electron source; image display device; method of manufacturing the electron emitting device; method of manufacturing electron source using the electron emitting device; and method of manufacturing image display device There is provided an electron emitting device utilizing a plurality of carbon fibers, in which a mean diameter value of the plurality of carbon fibers is in a range from a minimum of 10 nm to a maximum of 10 nm, and a standard deviation of diameter distribution of t... | 08/21/2007 |
| 7256434 | Heterojunction bipolar transistor and method for manufacturing the same, and power amplifier using the same A heterojunction bipolar transistor with InGaP as the emitter layer and capable of both reliable electrical conduction and thermal stability wherein a GaAs layer is inserted between the InGaP emitter layer and AlGaAs ballast resistance layer, to prevent holes revers... | 08/14/2007 |
| 7192785 | Water-soluble luminescent quantum dots and biomolecular conjugates thereof and related compositions and methods of use The present invention provides a water-soluble luminescent quantum dot, a biomolecular conjugate thereof and a composition comprising such a quantum dot or conjugate. Additionally, the present invention provides a method of obtaining a luminescent quantum dot, a met... | 03/20/2007 |
| 7094123 | Method of manufacturing an electron emitting device with carbon nanotubes There is provided a method of manufacturing an electron emitting device by disposing a substrate with a catalytic metal film inside a reaction vessel; feeding hydrogen gas and hydrocarbon gas simultaneously into the reaction vessel at a temperature close to room tem... | 08/22/2006 |
| 6956248 | Semiconductor device for low voltage protection with low capacitance A semiconductor thyristor device that incorporates buried region breakdown junctions laterally offset from an emitter region. By spacing the buried regions around the emitter region, current carriers emitted from the buried regions are distributed over a large area ... | 10/18/2005 |
| 6920680 | Method of making vacuum microelectronic device A method of forming a vacuum microelectronic device including steps of forming at least one electron emitter on a substrate, applying a first electric field to move a portion of the at least one electron emitter in a direction toward the first electric field, and ma... | 07/26/2005 |
| 6855970 | High-breakdown-voltage semiconductor device A high-breakdown-voltage semiconductor device comprises a high-resistance semiconductor layer, trenches formed on the surface thereof in a longitudinal plane shape and in parallel, first regions formed on the semiconductor layer to be sandwiched between adjacent one... | 02/15/2005 |
| 6703647 | Triple base bipolar phototransistor A high gain phototransistor uses lateral and vertical transistor structures and a triple base. The base regions of two vertical structures are in the bulk of a semiconductor substrate while the base of a single lateral structure is adjacent a light receiv... | 03/09/2004 |
| 6570186 | Light emitting device using group III nitride compound semiconductor A wafer comprising a semiconductor layer formed on a substrate is diced on the back surface of the substrate to a depth of about 3/4 thickness of the substrate. Thus a separation groove 21 is formed in a direction of a dicing line. A groove 22 is formed a... | 05/27/2003 |
| 6531717 | Very low voltage actuated thyristor with centrally-located offset buried region A semiconductor thyristor device that incorporates buried regions centrally located on the chip with respect to the other semiconductor regions. By centering an upper and lower buried region, larger-area contacts can be realized, thereby increasing the cu... | 03/11/2003 |
| 6503782 | Complementary accumulation-mode JFET integrated circuit topology using wide (>2eV) bandgap semiconductors A method and device produced for design, construction, and use of integrated circuits in wide bandgap semiconductors, including methods for fabrication of n-channel and p-channel junction field effect transistors on a single wafer or die, such that the pr... | 01/07/2003 |
| 6495865 | Microcathode with integrated extractor A microcathode which integrates both an electron emitter, or cathode, and an extractor electrode. The electron emitter is attached to the back side of a thin film microstructure on a first surface of a substrate. Electrons are emitted from the electron em... | 12/17/2002 |
| 6492663 | Universal source geometry for MOS-gated power devices A semiconductor device is disclosed and includes a drain region of a first conductivity type, having a first major surface. Diffused into the drain region is a body region of a second conductivity type. A source region is diffused in the body region and i... | 12/10/2002 |
| 6468808 | Water-soluble luminescent quantum dots and biomolecular conjugates thereof and related compositions and method of use The present invention provides a water-soluble luminescent quantum dot, a biomolecular conjugate thereof and a composition comprising such a quantum dot or conjugate. Additionally, the present invention provides a method of obtaining a luminescent quantum... | 10/22/2002 |
| 6437419 | Emitter ballast resistor with enhanced body effect to improve the short circuit withstand capability of power devices A power semiconductor device has an integral source/emitter ballast resistor. The gate has partial gate structures spaced apart from each other. Emitter resistors are provided beneath sidewall spacers on the ends of the gate structures. The emitter resist... | 08/20/2002 |
| 6329675 | Self-aligned bipolar junction silicon carbide transistors A method of fabricating a self-aligned bipolar junction transistor in a semiconductor structure having a first layer of silicon carbide generally having a first conductivity type and a second layer of silicon carbide generally having a second conductivity... | 12/11/2001 |
| 6111278 | Power semiconductor devices having discontinuous emitter regions therein for inhibiting parasitic thyristor latch-up Power semiconductor devices having discontinuous emitter regions therein include a semiconductor substrate containing therein a collector region of second conductivity type, a buffer region of first conductivity type which forms a first P-N junction with ... | 08/29/2000 |
| 6084253 | Low voltage four-layer device with offset buried region A four-layer low voltage thyristor device (30) in which the breakover voltage is independent of the holding current. Rather than forming a buried region (38) underlying the emitter region (42), the buried region 38 is formed laterally to the side of the e... | 07/04/2000 |
| 6033924 | Method for fabricating a field emission device A method for fabricating a field emission device (200) includes the steps of forming on the surface of a substrate (110) a cathode (112), forming on the cathode (112) a dielectric layer (114), forming an emitter well (115) in the dielectric layer (114), f... | 03/07/2000 |
| 5998812 | Amplifying-gate thyristor with an increased hold current An amplifying-gate thyristor having an increased integrated circuit includes a main thyristor and an amplifying thyristor. The amplifying thyristor is of the gate turnoff-type. The main thyristor and the amplifying thyristor are such that the amplifying t... | 12/07/1999 |
| 5962878 | Surge protection device and method of fabricating the same In a bidirectional surge protection device formed on a semiconductor substrate, buried layers, which have the same conduction type as and are higher in impurity concentration than the semiconductor substrate, are formed on the entire surfaces of the devic... | 10/05/1999 |
| 5907180 | Ballast monitoring for radio frequency power transistors The present invention, generally speaking, provides an apparatus and method whereby the current flow through an RF power transistor may be monitored without the use of any external parts. More particularly, in accordance with one embodiment of the inventi... | 05/25/1999 |
| 5818074 | Smooth switching thyristor A semiconductor thyristor has multiple different semiconductor layers with regions arranged in predetermined configurations to cause a plasma of carriers to flow in an expanding volume over a finite time to reach a full conduction condition, after the thy... | 10/06/1998 |
| 5739555 | Amplifying-gate thyristor with an increased hold current An amplifying-gate thyristor having an increased integrated circuit includes a main thyristor and an amplifying thyristor. The amplifying thyristor is of the gate turnoff-type. The main tbyristor and the amplifying thyristor are such that the amplifying t... | 04/14/1998 |
| 5736755 | Vertical PNP power device with different ballastic resistant vertical PNP transistors Disclosed are devices having emitters having resistive emitter diffusion sections are in a radial pattern. Such devices include vertical PNP power devices. The radial pattern of holes defines resistive emitter diffusion sections between adjacent holes. Th... | 04/07/1998 |
| 5731605 | Turn-off power semiconductor component with a particular ballast resistor structure A power semiconductor component which can be turned off by gate control and whose semiconductor body has a plurality of unit cells arranged side by side which are comprised of a p-emitter region (1) adjacent to the anode, an adjoining lightly doped n-base... | 03/24/1998 |
| 5654562 | Latch resistant insulated gate semiconductor device An insulated gate semiconductor device (10) is fabricated by providing at least one ballast resistor (40) having a sheet resistance of at least one square. The ballast resistor (40) is formed in the emitter region (17) between two adjacent portions of the... | 08/05/1997 |
| 5581096 | Integrated semiconductor device having a thyristor An integrated semiconductor device having a thyristor includes outer npn-transistors, outer pnp-transistors, and an inner npn-transistor. The outer pnp-transistors and the inner npn-transistor are interconnected so as to form a thyristor to allow the inne... | 12/03/1996 |
| 5525816 | Insulated gate semiconductor device with stripe widths There is disclosed an insulated gate bipolar transistor which includes a p type semiconductor region (11) formed in a surface of an n- semiconductor layer (3) by double diffusion in corresponding relation to a p type base region (4) of an IGBT ... | 06/11/1996 |
