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| Number | Title | Issue Date |
| 7439563 | High-breakdown-voltage semiconductor device A high-breakdown-voltage semiconductor device comprises a high-resistance semiconductor layer, trenches formed on the surface thereof in a longitudinal plane shape and in parallel, first regions formed on the semiconductor layer to be sandwiched between adjacent one... | 10/21/2008 |
| 7420228 | Bipolar transistor comprising carbon-doped semiconductor A bipolar transistor comprising a collector region of a first conduction type, and a subcollector region of the first conduction type at a first side of the collector region. The transistor further includes a base region of the second conduction type provided at a s... | 09/02/2008 |
| 7326965 | Surface-emitting type device and its manufacturing method A surface-emitting type device includes a substrate including a first face, a second face that is tilted with respect to the first face and has a plane index different from a plane index of the first face, and a third face that is tilted with respect to the second f... | 02/05/2008 |
| 7276778 | Semiconductor system functioning as thyristor in on-state, and as bipolar transistor in transient state or with overcurrent A semiconductor system includes a self arc-extinguishing device, and an IGBT that works as a thyristor when a current between a first terminal and a second terminal connected to a second well electrode is small, and as a bipolar transistor when that current is large... | 10/02/2007 |
| 7256430 | Thyristor semiconductor memory device and method of manufacture A thyristor memory device may comprise a capacitor electrode formed over a base region of the thyristor using a replacement gate process. During formation of the thyristor, a base-emitter boundary may be aligned relative to a shoulder of the capacitor electrode. In ... | 08/14/2007 |
| 7233031 | Vertical power semiconductor component A vertical power semiconductor component, e.g. a diode or an IGBT, in which there are formed, on the rear side of a substrate, a rear side emitter or a cathode emitter and, over that, a rear side metal layer that at least partly covers the latter, is defined by the ... | 06/19/2007 |
| 7195959 | Thyristor-based semiconductor device and method of fabrication A thyristor-based semiconductor memory device may comprise at least a region thereof, e.g., a p-base region, having high ionization energy impurity, such as a dopant. This high ionization energy impurity within a base region may be operable to compensate for a gain-... | 03/27/2007 |
| 7075122 | Thyristor device with carbon lifetime adjustment implant and its method of fabrication In a method of fabricating a semiconductor memory device, a thyristor may be formed in a layer of semiconductor material. Carbon may be implanted and annealed in a base-emitter junction region for the thyristor to affect leakage characteristics. The density of the c... | 07/11/2006 |
| 7074628 | Test structure and method for yield improvement of double poly bipolar device A method and apparatus for identifying crystal defects in emitter-base junctions of NPN bipolar transistors uses a test structure having an NP junction that can be inspected using passive voltage contrast. The test structure eliminates the collector of the transisto... | 07/11/2006 |
| 7049158 | Method of manufacturing an emitter A method is disclosed for creating an emitter having a flat cathode emission surface: First a protective layer that is conductive is formed on the flat cathode emission surface. Then an electronic lens structure is created over the protective layer. Finally, the pro... | 05/23/2006 |
| 7012301 | Trench lateral power MOSFET and a method of manufacturing the same A semiconductor device is provided that can be manufactured by a simpler process than a conventional lateral trench power MOSFET for use with an 80V breakdown voltage, and which has a lower device pitch and lower on-state resistance per unit area than a conventional... | 03/14/2006 |
| 6933517 | Tunneling emitters An emitter includes an electron supply and a tunneling layer disposed on the electron supply. A cathode layer is disposed on the tunneling layer. A conductive electrode has multiple layers of conductive material. The multiple layers include a protective layer dispos... | 08/23/2005 |
| 6924177 | Method for producing a thyristor A thyristor having a first zone, a second zone, a third zone, and a fourth zone. At least one control electrode is connected to the second and/or third zone. In order to reduce the static and dynamic power loss in a symmetrical thyristor, it is proposed that a field... | 08/02/2005 |
| 6835997 | Thyristor-based device with trench dielectric material A thyristor-based semiconductor device includes a thyristor body that has at least one region in the substrate and a thyristor control port in a trenched region of the device substrate. According to an example embodiment of the present invention, the trench is at le... | 12/28/2004 |
| 6806488 | Tunneling emitters and method of making An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer is formed... | 10/19/2004 |
| 6781146 | Annealed tunneling emitter An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within which the tunneling layer is formed. A cathode layer is formed on... | 08/24/2004 |
| 6756612 | Carrier coupler for thyristor-based semiconductor device Switching times of a thyristor-based semiconductor device are improved by enhancing carrier drainage from a buried thyristor-emitter region. According to an example embodiment of the present invention, a conductive contact extends to a doped well region buried in a ... | 06/29/2004 |
| 6753544 | Silicon-based dielectric tunneling emitter An emitter has an electron supply layer and a silicon-based dielectric layer formed on the electron supply layer. The silicon-based dielectric layer is preferably less than about 500 Angstroms. Optionally, an insulator layer is formed on the electron supply layer an... | 06/22/2004 |
| 6727518 | Light emitting device using group III nitride compound semiconductor A wafer comprising a semiconductor layer formed on a substrate is diced on the back surface of the substrate to a depth of about ¾ thickness of the substrate. Thus a separation groove 21 is formed in a direction of a dicing line. A groove 22 is formed... | 04/27/2004 |
| 6696709 | Low voltage protection module A semiconductor thyristor device incorporates buried regions to achieve low breakover voltage devices, and the buried regions are offset laterally with respect to the emitter regions. The low voltage thyristor devices can be incorporated into five-pin pro... | 02/24/2004 |
| 6683330 | Recessed thyristor control port A semiconductor device is formed including a substrate having an upper surface, a thyristor region in the substrate and a control port adapted for capacitively coupling to at least a portion of the thyristor region via a dielectric material. According to ... | 01/27/2004 |
| 6683331 | Trench IGBT An IGBT has parallel spaced trenches lined with gate oxide and filled with conductive polysilicon gate bodies. The trenches extend through a P- base region which is about 7 microns deep. A deep narrow N+ emitter diffusion is at the t... | 01/27/2004 |
| 6666481 | Shunt connection to emitter A semiconductor device is formed having a thyristor, a pass device and a conductive shunt that electrically connects an emitter region of the thyristor with a node near an upper surface of the substrate. In one example embodiment of the present invention,... | 12/23/2003 |
| 6657240 | Gate-controlled, negative resistance diode device using band-to-band tunneling A new gate-controlled, negative resistance diode device is achieved. The device comprises, first, a semiconductor layer in a substrate. The semiconductor layer contains an emitter region and a barrier region. The barrier region is in contact with the emit... | 12/02/2003 |
| 6570186 | Light emitting device using group III nitride compound semiconductor A wafer comprising a semiconductor layer formed on a substrate is diced on the back surface of the substrate to a depth of about 3/4 thickness of the substrate. Thus a separation groove 21 is formed in a direction of a dicing line. A groove 22 is formed a... | 05/27/2003 |
| 6509578 | Method and structure for limiting emission current in field emission devices A field emission display has electron emitters that are current-limited by implanting in a silicon layer only enough ions to produce a desired current, and then forming emitters from the silicon layer by isotropic etching.... | 01/21/2003 |
| 6503782 | Complementary accumulation-mode JFET integrated circuit topology using wide (>2eV) bandgap semiconductors A method and device produced for design, construction, and use of integrated circuits in wide bandgap semiconductors, including methods for fabrication of n-channel and p-channel junction field effect transistors on a single wafer or die, such that the pr... | 01/07/2003 |
| 6329675 | Self-aligned bipolar junction silicon carbide transistors A method of fabricating a self-aligned bipolar junction transistor in a semiconductor structure having a first layer of silicon carbide generally having a first conductivity type and a second layer of silicon carbide generally having a second conductivity... | 12/11/2001 |
| 6033924 | Method for fabricating a field emission device A method for fabricating a field emission device (200) includes the steps of forming on the surface of a substrate (110) a cathode (112), forming on the cathode (112) a dielectric layer (114), forming an emitter well (115) in the dielectric layer (114), f... | 03/07/2000 |
| 6020623 | Integrated structure with device having a preset reverse conduction threshold An integrated structure is made in a chip of semiconductor material inside an insulated N type region extending from a surface of the chip. The structure comprises a Zener diode formed by a P type first region extending from the surface inside the insulat... | 02/01/2000 |
| 5959344 | High forward current gain bipolar transistor A bipolar transistor includes an emitter, a base, a collector, an additional base semiconductor region having the same conductivity type as the base, arranged at the emitter and constituting a connection with the emitter. A first electrical connection con... | 09/28/1999 |
| 5939736 | Insulated gate thyristor A semiconductor device for conducting a in current across a cathode electrode and an anode electrode, includes a thyristor formed of an n+ floating region connected electrically to the cathode electrode, a p+ anode connected electric... | 08/17/1999 |
| 5925900 | Emitter-switched thyristor having a floating ohmic contact The operating characteristics of emitter-switched thyristors (1) are improved by the addition of a floating ohmic contact (14) over adjacent regions of n+ and p+ type (15,16). In a lateral device, the floating ohmic contact (14) and the adjacent regions o... | 07/20/1999 |
| 5907180 | Ballast monitoring for radio frequency power transistors The present invention, generally speaking, provides an apparatus and method whereby the current flow through an RF power transistor may be monitored without the use of any external parts. More particularly, in accordance with one embodiment of the inventi... | 05/25/1999 |
| 5894141 | Bipolar semiconductor power controlling devices with heterojunction Semiconductor bipolar power devices comprise a control electrode for turning on or off a first source of charge carriers into the device and a p-n junction emitter remote from the first source and acting in correspondence with the condition of the first s... | 04/13/1999 |
| 5796124 | MOS gate controlled thyristor On one major surface of an n- -type semiconductor substrate, a p-type region is formed in a semiconductor substrate, and an n-type emitter region is formed in the p-type base region. A p-type source region is formed near the p-type base region.... | 08/18/1998 |
| 5719411 | Three-terminal MOS-gate controlled thyristor structures with current saturation characteristics MOS-gate controlled thyristor structures which have current saturation characteristics, do not have any parasitic thyristor structure, and require only a single gate drive. A resistive structure such as a MOSFET, Schottky diode, PN junction diode, diffuse... | 02/17/1998 |
| 5710445 | Gate turn-off thyristor for high blocking voltage and small component thickness A GTO is specified which, starting from the anode-side main surface (2), comprises an anode emitter (6), a barrier layer (11), an n-base (7), a p-base (8) and a cathode emitter (9). The anode emitter (6) is designed as a transparent emitter and has anode ... | 01/20/1998 |
| 5619047 | Semiconductor diode in which electrons are injected into a reverse current A diode (1) is specified which has electron injection means on the anode-side principal surface (3). After the reverse-current peak has been traversed, said means inject electrons into the anode emitter. This compensates for holes and the danger of a dyna... | 04/08/1997 |
| 5581096 | Integrated semiconductor device having a thyristor An integrated semiconductor device having a thyristor includes outer npn-transistors, outer pnp-transistors, and an inner npn-transistor. The outer pnp-transistors and the inner npn-transistor are interconnected so as to form a thyristor to allow the inne... | 12/03/1996 |
