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| Number | Title | Issue Date |
| 7115811 | Semiconductor body forming a solar cell with a bypass diode The present invention is directed to systems and methods for protecting a solar cell. The solar cell includes first solar cell portion. The first solar cell portion includes at least one junction and at least one solar cell contact on a backside of the first solar c... | 10/03/2006 |
| 7064359 | Switching semiconductor device and switching circuit A switching semiconductor device includes a first compound layer formed on a single crystal substrate which includes silicon carbide or sapphire, and including a general formula InxGa1-xN, where 0≦x≦1; a second compound layer formed on the ... | 06/20/2006 |
| 7061739 | Overcurrent protection circuit Disclosed is an overcurrent protection circuit including an overcurrent trip and a switching element. A switched current passing through the switching element can be detected by the overcurrent trip and the switching element can be tripped to open if the switched cu... | 06/13/2006 |
| 7015562 | High-voltage diode A high-voltage diode has a dopant concentration of an anode region and a cathode region optimized in terms of basic functions static blocking and conductivity. Dopant concentrations range from 1×1017 to 3×1018 dopant atoms per cm3 ... | 03/21/2006 |
| 6570193 | Reverse conducting thyristor device, pressure-connection type semiconductor device and semiconductor substrate The present invention relates to a reverse conducting thyristor device. It aims at preventing heat generated by power loss from filling end field protective rubber and at simplifying a sheath storing a semiconductor substrate. In a reverse conducting thyr... | 05/27/2003 |
| 5998812 | Amplifying-gate thyristor with an increased hold current An amplifying-gate thyristor having an increased integrated circuit includes a main thyristor and an amplifying thyristor. The amplifying thyristor is of the gate turnoff-type. The main thyristor and the amplifying thyristor are such that the amplifying t... | 12/07/1999 |
| 5861639 | Breakover-triggered dipole component having a controlled sensitivity A dipole component with a controlled breakover sensitivity includes a main thyristor having its gate connected to its anode through a pilot thyristor, and a triggering transistor disposed in parallel with the pilot thyristor, the base of the triggering tr... | 01/19/1999 |
| 5859446 | Diode and power converting apparatus In a diode, the backward length L of an anode electrode in a region, where a semiconductor layer of a p+ conductivity type and an anode electrode do not contact each other, is made longer than the diffusion length of holes in a semiconductor l... | 01/12/1999 |
| 5808327 | AC controller An AC power controller includes at least two semiconductor regions reverse-connected in series. Each semiconductor region has an electron donor (source), an electron sink (drain) and an electron flow control electrode (gate) with characteristic curves suc... | 09/15/1998 |
| 5801458 | Direct current control circuit A control circuit for turning off or on direct current flowing through an inductive load (12) to ground uses a semiconductor switch (11), for example a MOSFET, having a first input terminal (D), a control terminal (G), and a second output terminal (S) to ... | 09/01/1998 |
| 5751022 | Thyristor A semiconductor device is disclosed having a thyristor region coupled to a semiconductor switching device and a semiconductor rectifier. During turn-off operation, holes are drained from the p-type base region of the thyristor region through the semicondu... | 05/12/1998 |
| 5739555 | Amplifying-gate thyristor with an increased hold current An amplifying-gate thyristor having an increased integrated circuit includes a main thyristor and an amplifying thyristor. The amplifying thyristor is of the gate turnoff-type. The main tbyristor and the amplifying thyristor are such that the amplifying t... | 04/14/1998 |
| 5710444 | Insulated gate bipolar transistor having a coupling element The invention concerns a field-effect controlled semiconductor component with at least four regions of alternating opposite performance types: an anode-side emitter region, a first and a second base region connected to the emitter region, and a cathode-si... | 01/20/1998 |
| 5608235 | Voltage-controlled bidirectional switch A voltage-controlled power monolithic bidirectional switch has two main terminals and includes a control electrode whose voltage is referenced to one of the main terminals. The switch includes a lateral P-channel MOS transistor; a vertical N-channel MOS t... | 03/04/1997 |
| 5548135 | Electrostatic discharge protection for an array of macro cells An electrostatic discharge (ESD) protection circuit for an integrated circuit formed of a plurality of individual circuit cells which are connected to form the desired circuit. A pair of buss lines, preferably in closely spaced relation, extend about the ... | 08/20/1996 |
| 5360984 | IGBT with freewheeling diode A semiconductor device comprises a semiconductor substrate of a first conductive type with a low impurity density; a first region of a second conductive type; a second region of the first conductive type with a high impurity density formed in a surface of... | 11/01/1994 |
| 4520277 | High gain thyristor switching circuit A three terminal power switch utilizing a lateral thyristor switching circuit is disclosed which exhibits very high gain for both turn-on and turn-off. The gate turn-off capability of the lateral thyristor is accomplished utilizing a secondary shunting th... | 05/28/1985 |
| 4486768 | Amplified gate turn-off thyristor A gate controlled semiconductor device is provided having a main electrode member consisting of a cathode electrode assembly formed in one end layer of a wafer of semiconductive material and an anode electrode assembly formed in other end layer of said wa... | 12/04/1984 |
| 4446478 | Assembly in a single case of a main power-switching semiconductor component and a destorage diode In the pressure association of a main component such as a Darlington transistor or an amplifying gate thyristor and a storage diode, a specific destorage diode comprising an annular junction. Thus, transversally to the center of the diode a N+ ... | 05/01/1984 |
| 4443810 | Gate turn-off amplified thyristor with non-shorted auxiliary anode A gate turn-off thyristor is disclosed which includes a main thyristor having a shorted emitter structure on the anode side thereof and an auxiliary thyristor having a shorted emitter structure on the cathode side thereof and wherein the cathode of the au... | 04/17/1984 |
| 4394677 | Thyristor for low-loss triggering of short impulses with Schottky contact to control gate electrode A thyristor for low-loss triggering of short impulses, including a main thyristor formed of four alternating zones of opposite conductivity type including a cathode emitter, a cathode base, an anode base and an anode, with a portion of the cathode base em... | 07/19/1983 |
| 4393337 | Switching circuit First and second gate-controlled switches are connected analogously to a Darlington transistor pair with a slow-response diode connected to delay application of a turn-off signal to the second gate-controlled switch until the first gate-controlled switch ... | 07/12/1983 |
| 4255675 | Circuit arrangement for reducing the recovery time of a thyristor Circuit arrangement for reducing recovery time of a thyristor having a control electrode, a main emitter electrode and at least one auxiliary emitter electrode disposed between the main emitter electrode and the control electrode, includes two current sou... | 03/10/1981 |
| 4238761 | Integrated gate assisted turn-off, amplifying gate thyristor with narrow lipped turn-off diode An integrated amplifying gate thyristor is provided with an integral diode in the thyristor structure in the same semiconductor body. The diode provides gate assist turn-off capability with the same gate electrode used to turn-on a pilot thyristor of the ... | 12/09/1980 |
| 4217504 | Semiconductor switch with thyristors A semiconductor switch including a main thyristor and an auxiliary thyristor which can both be switched on and off by a control current. The anodes of the two thyristors are connected together and lead to a first load current terminal for the switch, the ... | 08/12/1980 |
| 4195306 | Gate turn-off thyristor A gate turn-off thyristor device including a gate turn-off main thyristor and a gate turn-off auxiliary thyristor, each having an emitter, a control base, a main base and a counter-emitter, integrated in a semiconductor body including three zones of alter... | 03/25/1980 |
| 4177478 | Amplifying gate thyristor with gate turn-off (G.T.O.) The invention relates to an amplifying gate thyristor with gate turn-off (G.T.O.) for electric power switching. A P+ type conduction layer is disposed in the thickness of the base P1, forming a buried grate under the main emitter and penetrating down to a... | 12/04/1979 |
| 4092703 | Gate controlled semiconductor device A gate controlled semiconductor device in which a gate electrode is substantially divided into many pieces. The semiconductor device comprises a semiconductive element having at least one P-N junction formed by at least a pair of P-type diffusion regions ... | 05/30/1978 |
| 4083063 | Gate turnoff thyristor with a pilot SCR Disclosed is a thyristor comprising a primary semiconductor controlled rectifier and a pilot semiconductor controlled rectifier. Conduction in the primary controlled rectifier is initiated by conduction in the pilot rectifier, which in turn is initiated b... | 04/04/1978 |
| 4040170 | Integrated gate assisted turn-off, amplifying gate thyristor, and a method for making the same An integrated amplifying gate thyristor is provided with an integral diode in the thyristor structure in the same semiconductor body. The diode provides gate assist turn-off capability with the same gate electrode used to turn-on a pilot thyristor of the ... | 08/09/1977 |
| 3967294 | PNPN semiconductor device In a PNPN semiconductor device comprising a cathode base layer, a cathode emitter layer and an auxiliary emitter layer disposed on one of its main faces, an auxiliary electrode is disposed on the cathode base layer adjacent to a cathode electrode and a di... | 06/29/1976 |
