Class 257/159 - Transistor as amplifier

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the amplification means is a transistor
No. of patents: 28
Last issue date: 06/22/2010

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Number	Title	Issue Date
7741656	Semiconductor device and manufacturing the same A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is...	06/22/2010
7714354	Electroformed metal structure A method is provided for electroforming metal integrated circuit structures. The method comprises: forming an opening such as a via or line through an interlevel insulator, exposing a substrate surface; forming a base layer overlying the interlevel insulator and sub...	05/11/2010
7671381	Semiconductor device and manufacturing the same A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is...	03/02/2010
7453104	Operational amplifier including low DC gain wideband feed forward circuit and high DC gain narrowband gain circuit In an operational amplifier including first and second power supply terminals, first and second input terminals, and a first and second output terminals, a first differential amplifier circuit includes first and second MOS transistors with a common source connected ...	11/18/2008
7312482	Semiconductor device, power amplifier device and PC card The present invention is directed to improve high frequency characteristics by reducing inductance of a source. In an HEMT assembled in a power amplifier device, each of a drain electrode, a source electrode, and a gate electrode is constructed by a base portion and...	12/25/2007
7224232	RF power amplifier and method for packaging the same A method and apparatus is provided for use in power amplifiers for reducing the peak voltage that transistors are subjected to. A power amplifier is provided with first and second switching devices and an inductor connected between the switching devices. The switchi...	05/29/2007
7134036	Processor core clock generation circuits An invention is provided for generating custom clock frequencies within a processor core. A CPU clock signal propagates through a DLL circuit. Further, a control signal controls the CPU clock signal as the signals propagate through multiple inverters in the DLL circ...	11/07/2006
6995795	Method for reducing dark current A method for reducing dark current within an image sensor includes applying, at a first time period, a first set of voltages to the phases of gate electrodes of vertical shift registers sufficient to accumulate holes of the vertical shift register, beneath each gate...	02/07/2006
6730945	Semiconductor device Three or more MESFETs are fabricated side by side on a semiconductor chip. A transmission line substantially identical in width with an area within which the MESFETS are fabricated is formed in parallel with the row of MESFETs. The MESFETs are connected to the trans...	05/04/2004
6593600	Responsive bidirectional static switch A monolithic bidirectional switch formed in a semiconductor substrate of type N, including a first main vertical thyristor, the rear surface layer of which is of type P, a second main vertical thyristor, the rear surface layer of which is of type N, an au...	07/15/2003
6271540	Thin film transistor with silicon oxynitride film and silicon nitride channel passivation film for preventing a back channel effect and a method for fabricating the same The present invention provides a thin film transistor (TFT) and a fabrication method thereof which suppresses the back channel effects in which a leakage current flows between a source electrode and a drain electrode at times during a turn off state of th...	08/07/2001
5998812	Amplifying-gate thyristor with an increased hold current An amplifying-gate thyristor having an increased integrated circuit includes a main thyristor and an amplifying thyristor. The amplifying thyristor is of the gate turnoff-type. The main thyristor and the amplifying thyristor are such that the amplifying t...	12/07/1999
4918509	Gate turn-off thyristor The invention relates to a gate turn-off thyristor which includes, per unit cell, a cathode-side emitter strip and two anode-side spaced emitter strips which overlap in position with the edge of the cathode-side emitter strip. In such a GTO thyristor, the...	04/17/1990
4827321	Metal oxide semiconductor gated turn off thyristor including a schottky contact An MOS gate turn-off thyristor structure includes non-regenerative (three-semiconductor-layer) portions interspersed with four-semiconductor-layer regenerative (thyristor) portions, gate electrode segments disposed adjacent to relatively narrow portions o...	05/02/1989
4654543	Thyristor with "on" protective circuit and darlington output stage A thyristor is preferably fabricated as a single thyristor device in an integrated circuit. The thyristor is made conductive by applying an ordinary gating voltage to the gate thereof. However, the thyristor can be kept in a conductive state, even though ...	03/31/1987
4604638	Five layer semiconductor device with separate insulated turn-on and turn-off gates A semiconductor device has first and second layers of n-type conductivity, a third layer of p-type conductivity which is formed between the first and second layers, a fourth layer of p-type conductivity which is in contact with the second layer, and a gat...	08/05/1986
4529998	Amplified gate thyristor with non-latching amplified control transistors across base layers A diode is integrated on a common substrate with a thyristor to form a parasitic transistor in the gate circuit of the thyristor for amplifying gate current thereto. In addition, gate sensitivity is further enhanced by this formation because the injection...	07/16/1985
4491742	Semiconductor switch device A self-turn-off type semiconductor switch comprising a gate-reverse biasing thyristor and a transistor connected in parallel to each other wherein the load current is shunted to the transistor, thus causing the thyristor to be turned off....	01/01/1985
4472642	Power semiconductor switching device A power semiconductor switching device comprises a first transistor which has semiconductor layers whose conductive types are alternately different in a first pattern and has an emitter connected to one end of a main circuit including a load; a second tra...	09/18/1984
4463367	Frame-transfer charge-coupled image sensor device having channel sounding regions below light-admitting windows A charge-coupled image sensor device of the frame-transfer type has an electrode system through which windows (14) allow light to enter the device. One group of electrodes (15 and 16 ) extends transverse to charge transport channels (9 or 11) in the devic...	07/31/1984
4338617	Four terminal GTO thyristor with transistor controlled turn-off A semiconductor element comprises the first conductive type first semiconductor layer (11) which has an exposed surface at the first surface side to contact with the first contact (21); the second conductive type second semiconductor layer (12) which forms the...	07/06/1982
4309715	Integral turn-on high voltage switch A high voltage solid-state switch uses a dielectrically isolated lightly doped p- type semiconductor body with a heavily doped p+ type anode region, a heavily doped n+ type gate region, a moderately doped p type shield region, and a heavily doped n+ type ...	01/05/1982
4268846	Integrated gate turn-off device with lateral regenerative portion and vertical non-regenerative power portion A gate turn-off device is formed by the integration of a lateral SCR and a vertical power transistor operating in parallel, with the latter carrying most of the load current whereby the former may be easily turned off which in turn terminates base drive t...	05/19/1981
4194213	Semiconductor image sensor having CCD shift register In a semiconductor image sensor composed of a plurality of charge-coupled photo-sensor elements, each of said photo-sensor elements comprises a substrate of one conductivity type with an insulating layer thereon, a first electrode on the insulating layer ...	03/18/1980
4141024	Solid state image sensing device A solid state image sensing device having a semiconductor substrate, an insulating layer disposed on one major surface of the substrate, plural channel stopper regions formed in the substrate in faced relation to the major surface of the substrate, each c...	02/20/1979
4040170	Integrated gate assisted turn-off, amplifying gate thyristor, and a method for making the same An integrated amplifying gate thyristor is provided with an integral diode in the thyristor structure in the same semiconductor body. The diode provides gate assist turn-off capability with the same gate electrode used to turn-on a pilot thyristor of the ...	08/09/1977
3979766	Semiconductor device A semiconductor device is disclosed which comprises a first region of a first conductivity type, a second region of a second conductivity type and adjacent to said first region, a third region of the first conductivity type and adjacent to fifth regions o...	09/07/1976
3968512	Thyristor A thyristor including a semiconductor element which comprises a main thyristor and at least one auxiliary arrangement operative to amplify the control current, the main thyristor having a main emitter and the auxiliary arrangement having an auxiliary emit...	07/06/1976

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Class 257/159 - Transistor as amplifier