Bizarre Patents
Behavior Modification Wristwatch
A wristwatch including a watch band and a watch body having an octagon shaped perimeter and being red in color and having the word STOP thereon to resemble a stop sign.
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| Number | Title | Issue Date |
| 8134178 | Light-emitting element According to an aspect of the invention, a light-emitting element includes a shift thyristor, a light emitting thyristor, and a vertical type gate load resistor. The shift thyristor includes a first anode layer, a first gate layer, and a first cathode layer. The lig... | 03/13/2012 |
| 8080831 | Semiconductor device and manufacturing the same A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is... | 12/20/2011 |
| 8080830 | Semiconductor device and method of driving the same A semiconductor device includes: a bulk semiconductor substrate; a thyristor formed in the bulk semiconductor substrate; a gate electrode formed at the third region; and a well region. The thyristor included a first region of a first conduction type, a second region... | 12/20/2011 |
| 7687826 | Thyristor with recovery protection A main thyristor (1) has a recovery protection which is integrated into a drive thyristor (2) whose n-doped emitter (25) is electrically connected to a main thyristor control terminal (140). Moreover, the p-doped emitter (28) of th... | 03/30/2010 |
| 7385230 | Modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit A thyristor and family of high speed transistors and optoelectronic devices are obtained on a monolithic substrate (149) with an epitaxial layer structure comprised of two modulation doped transistor structures inverted with respect to each other. The transis... | 06/10/2008 |
| 7352233 | Efficient thyristor-type power switches The highest-power switches now available are based on thyristor-type devices: GTOs (Gate turn-off thyristors), MTOs (MOS controlled turn-off thyristors), IGCTs (Integrated gate commutated thyristors), and the new ETOs (Emitter turn-off thyristors). These devices han... | 04/01/2008 |
| 7339203 | Thyristor and method of manufacture A thyristor and a method for manufacturing the thyristor that includes a gate region extending from the first major surface into a semiconductor substrate and an anode region extending from the second major surface into the semiconductor substrate. A cathode region ... | 03/04/2008 |
| 7312482 | Semiconductor device, power amplifier device and PC card The present invention is directed to improve high frequency characteristics by reducing inductance of a source. In an HEMT assembled in a power amplifier device, each of a drain electrode, a source electrode, and a gate electrode is constructed by a base portion and... | 12/25/2007 |
| 7276778 | Semiconductor system functioning as thyristor in on-state, and as bipolar transistor in transient state or with overcurrent A semiconductor system includes a self arc-extinguishing device, and an IGBT that works as a thyristor when a current between a first terminal and a second terminal connected to a second well electrode is small, and as a bipolar transistor when that current is large... | 10/02/2007 |
| 7259407 | Isolated HF-control SCR switch A vertical SCR switch to be controlled by a high-frequency signal having at least four main alternated layers. The switch includes a gate terminal and a gate reference terminal connected via integrated capacitors to corresponding areas. In the case of a thyristor, h... | 08/21/2007 |
| 7205581 | Thyristor structure and overvoltage protection configuration having the thyristor structure A thyristor structure having a first terminal, formed as a first region with a first conductivity type, is provided. A second region of a second conductivity type adjoins the first region. A third region of the first conductivity type, which adjoins the second regio... | 04/17/2007 |
| 7199402 | Semiconductor devices The present invention provides a semiconductor device embracing (a) a first semiconductor region defined by a first end surface, a second end surface opposing to the first end surface and a side boundary surface connecting the first and second end surfaces; (b) a se... | 04/03/2007 |
| 7193250 | Light-emitting element having PNPN-structure and light-emitting element array A light-emitting element including a light-emitting thyristor and a schottky barrier diode is provided. A schottky barrier diode is formed by contacting a metal terminal to a gate layer of a three-terminal light-emitting thyristor consisting of a PNPN-structure. A s... | 03/20/2007 |
| 7145185 | Voltage-controlled bidirectional switch The invention concerns a voltage-controlled triac-type component, formed in a N-type substrate (1) comprising first and second vertical thyristors (Th1, Th2), a first electrode (A2) of the first thyristor, on the front side of the compone... | 12/05/2006 |
| 6963088 | Semiconductor component A semiconductor component is arranged in a semiconductor body and has at least one integrated radially symmetrical lateral resistance having a location-dependent sheet resistance, the radial dependence of which is preferably configured such that the differential res... | 11/08/2005 |
| 6593600 | Responsive bidirectional static switch A monolithic bidirectional switch formed in a semiconductor substrate of type N, including a first main vertical thyristor, the rear surface layer of which is of type P, a second main vertical thyristor, the rear surface layer of which is of type N, an au... | 07/15/2003 |
| 6501099 | Modified-anode gate turn-off thyristor A gate turn-off thyristor includes a substrate formed of n-type silicon carbide; a growth buffer formed of n-type silicon carbide and positioned to overlie said substrate; a field buffer region formed of p-type silicon carbide and positioned to overlie sa... | 12/31/2002 |
| 6169292 | Thin film type monolithic semiconductor device A monolithic type active matrix semiconductor device comprises a substrate having an insulating surface, a first plurality of thin film transistors formed on the substrate, each having a first channel region comprising an amorphous silicon semiconductor f... | 01/02/2001 |
| 6124639 | Flat interface for a metal-silicon contact barrier film A method for forming a conductive contact having an atomically flat interface is disclosed. A layer containing cobalt and titanium is deposited on a silicon substrate and the resulting structure annealed in a nitrogen containing atmosphere at about 500° ... | 09/26/2000 |
| 6066864 | Thyristor with integrated dU/dt protection Given too great a dU/dt load of a thyristor, this can trigger in uncontrolled fashion in the region of the cathode surface. Since the plasma only propagates poorly there and the current density consequently reaches critical values very quickly, there is t... | 05/23/2000 |
| 6043516 | Semiconductor component with scattering centers within a lateral resistor region A semiconductor component has a semiconductor body with at least one integrated lateral resistor. The lateral resistor is formed with a dopant concentration in the resistor region. The resistor region is located in a region which is accessible from the su... | 03/28/2000 |
| 5998812 | Amplifying-gate thyristor with an increased hold current An amplifying-gate thyristor having an increased integrated circuit includes a main thyristor and an amplifying thyristor. The amplifying thyristor is of the gate turnoff-type. The main thyristor and the amplifying thyristor are such that the amplifying t... | 12/07/1999 |
| 5861639 | Breakover-triggered dipole component having a controlled sensitivity A dipole component with a controlled breakover sensitivity includes a main thyristor having its gate connected to its anode through a pilot thyristor, and a triggering transistor disposed in parallel with the pilot thyristor, the base of the triggering tr... | 01/19/1999 |
| 5751022 | Thyristor A semiconductor device is disclosed having a thyristor region coupled to a semiconductor switching device and a semiconductor rectifier. During turn-off operation, holes are drained from the p-type base region of the thyristor region through the semicondu... | 05/12/1998 |
| 5739555 | Amplifying-gate thyristor with an increased hold current An amplifying-gate thyristor having an increased integrated circuit includes a main thyristor and an amplifying thyristor. The amplifying thyristor is of the gate turnoff-type. The main tbyristor and the amplifying thyristor are such that the amplifying t... | 04/14/1998 |
| 5696391 | Overload protection circuit A protection device against overloads that may occur on an interface between a telephone exchange and line switches connected to a subscriber's line, comprises a single protection circuit on the subscriber side of the line switches with respect to the int... | 12/09/1997 |
| 5682044 | Reverse conducting thyristor with a planar-gate, buried-gate, or recessed-gate structure The present invention provides a reverse conducting (RC) thyristor of a planar-gate structure for low-and-medium power use which is relatively simple in construction because of employing a planar structure for each of thyristor and diode regions, permits ... | 10/28/1997 |
| 5365086 | Thyristors having a common cathode A thyristor comprised of a vertical thyristor including, on its front surface, a localized anode region, and on its rear surface, a cathode metallization substantially coating the whole rear surface region, and, on its front surface region, a lateral thyr... | 11/15/1994 |
| 5003369 | Thyristor of overvoltage self-protection type A thyristor of the overvoltage self-protection type capable of performing a turn-on operation certainly without being damaged even when an overvoltage is applied across the thyristor is disclosed in which a P-base layer is provided with a recess having su... | 03/26/1991 |
| 4994884 | Gate-controlled bi-directional semiconductor switching device In the gate-controlled bi-directional semiconductor switching device, when a negative trigger signal is applied to a second electrode functioning as a gate electrode, a second auxiliary thyristor formed of the sixth, third, first and eighth conductive lay... | 02/19/1991 |
| 4956690 | Zero crossing type thyristor A zero-crossing type thyristor is formed in an N-type semiconductor substrate. A first P-type base layer, a second P-type base layer, and a first P-type emitter layer are formed in a main surface of the substrate and isolated from one another by semicondu... | 09/11/1990 |
| 4914496 | Gate turn-off thyristor with independent turn-on/off controlling transistors A gate turn-off thyristor has first and second MOSFETs serving as turn-on and turn-off controlling devices, respectively. A p type semiconductor layer is additionally formed in an n type substrate functioning as a first base in such a manner as to overlap... | 04/03/1990 |
| 4908687 | Controlled turn-on thyristor A multistage amplifying thyristor incorporates integral current control resistor regions between adjacent thyristor stages for limiting turn-on current in all but the main thyristor stage. The thyristor is essentially immune from di/dt turn-on failure wit... | 03/13/1990 |
| 4825270 | Gate turn-off thyristor The present invention relates to a buried gate type gate turn-off thyristor. A low-resistance layer which is buried in a cathode base layer has a multiplicity of small bores below a cathode emitter layer. The distance between each pair of adjacent small b... | 04/25/1989 |
| 4760431 | Gate turn-off thyristor with independent turn-on/off controlling transistors A gate turn-off thyristor has first and second MOSFETs serving as turn-on and turn-off controlling devices, respectively. A p type semiconductor layer is additionally formed in an n type substrate functioning as a first base in such a manner as to overlap... | 07/26/1988 |
| 4673844 | Starter circuit for a fluorescent tube lamp A starter circuit for a fluorescent tube lamp is connected between the cathode heaters of the tube to provide an initial heating current and then changes to a high impedance to ignite the tube. The circuit is fed by raw rectified a.c. and has a main thyri... | 06/16/1987 |
| 4574296 | Gate turn-off thyristor with a cathode base layer having four distinct impurity concentrations A PNPN layer type gate turn-off thyristor including a first gate and a second gate comprises, in particular, a second P-type layer such that the impurity atom concentration at the auxiliary thyristor portion is lower than that at the main thyristor portio... | 03/04/1986 |
| 4559551 | Semiconductor device The semiconductor device has a first emitter layer and an auxiliary first emitter layer each having a first electrical conductivity, a first base layer having a second electrical conductivity, a second base layer having said first electrical conductivity ... | 12/17/1985 |
| 4555845 | Temperature stable self-protected thyristor and method of producing The present invention is directed to a process for providing overvoltage protection to a thyristor and to the thyristor so protected and comprises contacting the space charge region of the forward blocking junction of the thyristor with an electrical cont... | 12/03/1985 |
| 4502071 | FET Controlled thyristor A thyristor has a pair of opposite conductivity bases between and respectively adjacent to opposite conductivity emitters. An auxiliary emitter serves for internal current gain and is provided with an auxiliary emitter cathode. In order to meet the mutual... | 02/26/1985 |
