Famous Patents
The first match was accidentally discovered in 1826 when John Walker scraped a stick with chemicals on the end against a stone floor.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7705369 | High-voltage diode with optimized turn-off method and corresponding optimization method The invention relates to a high-voltage diode having a specifically optimized switch-off behavior. A soft recovery behavior of the component can be obtained without increasing the forward losses by adjusting in a specific manner the service life of the charge carrie... | 04/27/2010 |
| 7612388 | Power semiconductor element with an emitter region and a stop zone in front of the emitter region The power semiconductor element has an emitter region and a stop zone in front of the emitter region. The conductivities of the emitter region and of the stop zone are opposed to one another. In order to reduce not only the static but also the dynamic loss of the po... | 11/03/2009 |
| 7358565 | Semiconductor device having improved insulated gate bipolar transistor and method for manufacturing the same An n-type first base layer is formed on a semiconductor substrate 1 having a first major surface and a second major surface, and a p-type second base layer is formed thereon. Between the first base layer and the second base layer, a carrier stored layer is fo... | 04/15/2008 |
| 7319250 | Semiconductor component and method for producing the same A method for producing a semiconductor component has the following step: the front side (101) of the semiconductor body (100) is irradiated with high-energy particles using the terminal electrode (40) as a mask, in order to produce recombination... | 01/15/2008 |
| 7301178 | Pressed-contact type semiconductor device A P++-type first diffusion layer is formed by diffusing P-type impurities on a front side of an N−-type semiconductor substrate, and an N-type fourth diffusion layer which is shallower than the first diffusion layer is formed by diffusing N-t... | 11/27/2007 |
| 7276764 | Semiconductor device with metal wire layer masking An object of the present invention is to provide a semiconductor device capable of radiating electron-beams only to a desired region without forming a layer for restricting the radiating rays. A source electrode 22 made of aluminum prevents the generation of ... | 10/02/2007 |
| 7233031 | Vertical power semiconductor component A vertical power semiconductor component, e.g. a diode or an IGBT, in which there are formed, on the rear side of a substrate, a rear side emitter or a cathode emitter and, over that, a rear side metal layer that at least partly covers the latter, is defined by the ... | 06/19/2007 |
| 7211837 | Insulated gate semiconductor device A CSTBT includes a carrier stored layer (113) formed between a P base region (104) and a semiconductor substrate (103) and the carrier stored layer has an impurity concentration higher than that of the semiconductor substrate (103). The P... | 05/01/2007 |
| 7135359 | Manufacturing methods for large area silicon carbide devices Large area silicon carbide devices, such as light-activated silicon carbide thyristors, having only two terminals are provided. The silicon carbide devices are selectively connected in parallel by a connecting plate. Silicon carbide thyristors are also provided havi... | 11/14/2006 |
| 7075122 | Thyristor device with carbon lifetime adjustment implant and its method of fabrication In a method of fabricating a semiconductor memory device, a thyristor may be formed in a layer of semiconductor material. Carbon may be implanted and annealed in a base-emitter junction region for the thyristor to affect leakage characteristics. The density of the c... | 07/11/2006 |
| 7049182 | Shunt connection to the emitter of a thyristor A semiconductor device is formed having a thyristor, a pass device and a conductive shunt that electrically connects an emitter region of the thyristor with a node near an upper surface of the substrate. In one example embodiment of the present invention, the conduc... | 05/23/2006 |
| 6980457 | Thyristor-based device having a reduced-resistance contact to a buried emitter region A thyristor-based semiconductor device is formed having a thyristor, a pass device and an emitter region buried in a substrate and below at least one other vertically-arranged contiguous region of the thyristor that is at least partially below an upper surface of th... | 12/27/2005 |
| 6870199 | Semiconductor device having an electrode overlaps a short carrier lifetime region A semiconductor device that helps to prevent the occurrence of current localization in the vicinity of an electrode edge and improves the reverse-recovery withstanding capability. The semiconductor device according to the invention includes a first carrier lifetime ... | 03/22/2005 |
| 6864516 | SOI MOSFET junction degradation using multiple buried amorphous layers Various circuit devices incorporating junction-traversing dislocation regions and methods of making the same are provided. In one aspect, a method of processing is provided that includes forming an impurity region in a device region of a semiconductor-on-insulator s... | 03/08/2005 |
| 6774407 | Semiconductor device with a suppressed increase in turned-on resistance and an improved turn-off response The present invention provides a semiconductor device wherein the turning-off time thereof can be reduced substantially and, at the same time, the turned-on resistance thereof can also be prevented effectively from increasing as well. Lattice defects are distributed... | 08/10/2004 |
| 6756612 | Carrier coupler for thyristor-based semiconductor device Switching times of a thyristor-based semiconductor device are improved by enhancing carrier drainage from a buried thyristor-emitter region. According to an example embodiment of the present invention, a conductive contact extends to a doped well region buried in a ... | 06/29/2004 |
| 6605830 | Power semiconductor device including an IGBT with a MOS transistor as a current suppressing device incorporated therein A power semiconductor device including first and second assembly units. The first assembly of units includes a first semiconductor region of a second conductivity type selectively formed in a first main surface of the first semiconductor layer, a second s... | 08/12/2003 |
| 6512251 | Semiconductor switching element that blocks in both directions The semiconductor switching element blocks in both directions between a first and a second load terminal. The switching element has a field effect transistor and a bipolar transistor. The field effect transistor has a controlled gate, a source connected t... | 01/28/2003 |
| 6465871 | Semiconductor switching device and method of controlling a carrier lifetime in a semiconductor switching device A semiconductor layer, through which a main current flows, is so structured that a carrier life time in the semiconductor layer is ununiform in accordance with a predetermined distribution of the carrier life time. Thus, turn OFF characteristics of a semi... | 10/15/2002 |
| 6448588 | Insulated gate bipolar transistor having high breakdown voltage in reverse blocking mode An insulated gate bipolar transistor having a high breakdown voltage in a reverse blocking mode and a method for fabricating the same are provided. The insulated gate bipolar transistor includes a relatively low-concentration lower buffer layer and a rela... | 09/10/2002 |
| 6420774 | Low junction capacitance semiconductor structure and I/O buffer A low junction capacitance semiconductor structure and an I/O buffer are disclosed. The semiconductor structure includes a MOS transistor and a lightly doped region. The MOS transistor is formed in a semiconductor substrate and has a gate and source and d... | 07/16/2002 |
| 6373079 | Thyristor with breakdown region The thyristor is based on a semiconductor body with an anode-side base zone of the first conductivity type and one or more cathode-side base zones of the opposite, second conductivity type. Anode-side and cathode-side emitter zones are provided, and at le... | 04/16/2002 |
| 6339231 | Gate commutated turn-off thyristor module A gate terminal plate (1) of a GCT thyristor (90), a connecting substrate (70) of a driving device and a cathode electrode plate (10) are interposed between a set of metal rings (7A) and (7C) fastened to each other with a screw (8). The cathode electrode ... | 01/15/2002 |
| 6313485 | Gate-controlled thyristor A gate-controlled thyristor in which an IGBT in a first cell and a thyristor in a main cell are connected together in ouch a way that the first cell and the main cell form a lateral FET with a channel of a first conducting type. In an emitter zone of the ... | 11/06/2001 |
| 6239466 | Insulated gate bipolar transistor for zero-voltage switching An IGBT is optimized for ZVS operation, thereby significantly reducing switching losses during ZVS operation. In effect, the IGBT is optimized to operate as a MOSFET with a very small bipolar transistor component. Switching losses are reduced by reducing ... | 05/29/2001 |
| 6218683 | Diode The present invention relates to a diode, and has an object to simultaneously implement a high di/dt capability, a low reverse recovery loss and a low forward voltage and to suppress generation of voltage oscillation. In order to achieve the above-mention... | 04/17/2001 |
| 6207997 | Thin film transistor for antistatic circuit and method for fabricating the same A thin film transistor for an antistatic circuit includes: wells formed on a silicon substrate; insulating layers for electrical isolation between electrodes formed within the wells; low density impurity diffused regions respectively interposed between th... | 03/27/2001 |
| 6104043 | Schottky diode of SiC and a method for production thereof A Schottky diode of SiC has a substrate layer, a drift layer and emitter layer regions formed in the drift layer. A metal layer makes an ohmic contact to the emitter layer regions and Schottky contact to the drift layer. A depletion of the drift layer reg... | 08/15/2000 |
| 6031276 | Semiconductor device and method of manufacturing the same with stable control of lifetime carriers A semiconductor device includes a plurality of defect layers separated from one another in the semiconductor layer. A distance separating any adjacent ones of the defect layers is kept such that they are prevented from contacting each other and those regi... | 02/29/2000 |
| 5981984 | Insulated gate thyristor An insulated gate thyristor includes a first-conductivity-type base layer having a high resistivity, first and second second-conductivity-type base regions formed in a surface layer of the first-conductivity-type base layer, a first-conductivity-type sour... | 11/09/1999 |
| 5952682 | Semiconductor device with deep anode and lifetime reduction region A semiconductor device has a low lifetime layer in a selective portion of an N-type drain region to prevent a change in the element characteristic due to Fe contaminants, even if the device is kept at a high temperature. An impurity of a concentration of ... | 09/14/1999 |
| 5900652 | Apparatus for the localized reduction of the lifetime of charge carriers, particularly in integrated electronic devices A method and apparatus for the localized reduction of the lifetime of charge carriers in integrated electronic devices. The method comprises the step of implanting ions, at a high dosage and at a high energy level, of a noble gas, preferably helium, in th... | 05/04/1999 |
| 5883403 | Power semiconductor device In a semiconductor device, such as a diode and thyristor, having at least one pn junction between a pair of main surfaces, a first main electrode formed on the surface of one of the main surfaces and a second main electrode formed on the surface of the ot... | 03/16/1999 |
| 5808941 | SRAM cell employing substantially vertically elongated pull-up resistors An SRAM cell having at least four field effect transistors includes, a) at least four transistor gates, a ground line, a Vcc line, and a pair of pull-up resistors; the four transistor gates having associated transistor diffusion regions operatively adjace... | 09/15/1998 |
| 5808352 | Semiconductor apparatus having crystal defects It is an object to provide a semiconductor apparatus having both fast switching characteristics and high dielectric breakdown strength or small leakage current characteristics, as well as a process for fabricating such improved semiconductor apparatus. Th... | 09/15/1998 |
| 5717244 | Semiconductor device having layers with varying lifetime characteristics An N- layer (11) of a low impurity concentration is formed on an upper major surface of an N+ layer (13) of a high impurity concentration in a diode (10). A P layer (12) is further formed on its upper major surface. The N-... | 02/10/1998 |
| 5528058 | IGBT device with platinum lifetime control and reduced gaw For IGBT, MCT or like devices, the substrate is formed with P+, N+ and N- layers and PN diffusions to define body and source regions in the N-layer and a MOS-gated channel at the upper surface. The N-layer is sized and doped (~1014 /cm3 | 06/18/1996 |
| 5352910 | Semiconductor device with a buffer structure The present invention is directed to power semiconductor devices and, more particularly, to a semiconductor device with a static induction buffer structure which reduces the resistance of a buffer layer, enhances the injection efficiency of holes from the... | 10/04/1994 |
| 5289031 | Semiconductor device capable of blocking contaminants A semiconductor device comprises a semiconductor substrate having first and second major surfaces, semiconductor elements formed on the first surface of the semiconductor substrate, and a blocking layer formed within the substrate at a given distance from... | 02/22/1994 |
| 5284780 | Method for increasing the electric strength of a multi-layer semiconductor component For increasing the electric strength of a semiconductor component that comprises a sequence of semiconductor layers of alternating conductivity type and which is adapted to be charged with a voltage that biases at least one of the p-n junctions that separ... | 02/08/1994 |
