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| Number | Title | Issue Date |
| 7745846 | LDMOS integrated Schottky diode A semiconductor device includes a substrate having a first conductivity type and a semiconductor layer formed over the substrate and having lower and upper surfaces. A laterally diffused metal-oxide-semiconductor (LDMOS) transistor device is formed over the substrat... | 06/29/2010 |
| 7696531 | Semiconductor device and manufacturing method thereof A semiconductor device includes: an channel layer formed on a semiconductor substrate; a drain electrode and a source electrode both formed on the channel layer apart from each other; a surface passivation film formed on the channel layer so as to cover the channel ... | 04/13/2010 |
| 7419862 | Method of fabricating pseudomorphic high electron mobility transistor Provided is a method of fabricating a pseudomorphic high electron mobility transistor (PHEMT). The method includes the steps of: preparing a substrate including a channel layer and a capping layer that is the uppermost layer; forming a source and a drain on the capp... | 09/02/2008 |
| 7402865 | Semiconductor device including a contact connected to the body and method of manufacturing the same A Schottky junction is formed at the connection between an SOI layer and a contact (namely, under an element isolation insulating film) without forming a P+ region with a high impurity concentration thereat. The surface of a body contact is provide with a... | 07/22/2008 |
| 7382001 | Enhancement mode III-nitride FET A III-nitride switch includes a recessed gate contact to produce a nominally off, or an enhancement mode, device. By providing a recessed gate contact, a conduction channel formed at the interface of two III-nitride materials is interrupted when the gate electrode i... | 06/03/2008 |
| 7368760 | Low parasitic capacitance Schottky diode A low parasitic capacitance Schottky diode including a lightly doped polycrystalline silicon island that is formed on a shallow trench isolation (STI) pad such that the polycrystalline silicon island is entirely isolated from an underlying silicon substrate by the S... | 05/06/2008 |
| 7230300 | Semiconductor device with peripheral trench Conventional power MOSFETs enables prevention of an inversion in a surrounding region surrounding the outer periphery of an element region by a wide annular layer and a wide sealed metal. Since, resultantly, the area of the surrounding region is large, increase in t... | 06/12/2007 |
| 7205583 | Thyristor and method of manufacture A thyristor and a method for manufacturing the thyristor that includes providing a semiconductor substrate that has first and second major surfaces. A first doped region is formed in the semiconductor substrate, wherein the first doped extends from the first major s... | 04/17/2007 |
| 7199442 | Schottky diode structure to reduce capacitance and switching losses and method of making same A SiC Schottky barrier diode (SBD) is provided having a substrate and two or more epitaxial layers, including at least a thin, lightly doped N-type top epitaxial layer, and an N-type epitaxial layer on which the topmost epitaxial layer is disposed. Multiple epitaxia... | 04/03/2007 |
| 7186609 | Method of fabricating trench junction barrier rectifier A Schottky rectifier includes a rectifying interface between a semiconductor body and a metal layer. Trenches are formed in the surface of the semiconductor body and regions of a conductivity type opposite to the conductivity type of the body are formed along the si... | 03/06/2007 |
| 7180158 | Semiconductor device and method of manufacture A semiconductor component and method of manufacture, including an insulated gate bipolar transistor (IGBT) (100) including a semiconductor substrate (110) having a first conductivity type and buried semiconductor region (115) having a second con... | 02/20/2007 |
| 7135718 | Diode device and transistor device A semiconductor device having improved breakdown voltage is provided. A diode device of the present invention includes relay diffusion layers provided between guard ring portions. Therefore, a depletion layer expanded outward from the guard ring portions except the ... | 11/14/2006 |
| 7126168 | Silicon controlled rectifier structures with reduced turn on times The turn on time of an electrostatic discharge (ESD) structure, such as a silicon controlled rectifier (SCR), a low-voltage triggering SCR (LVTSCR), and a bipolar SCR (BSCR), is reduced by turning on the structure in two steps: a first step that locally turns on the... | 10/24/2006 |
| 7071498 | Gallium nitride material devices including an electrode-defining layer and methods of forming the same Gallium nitride material devices and methods of forming the same are provided. The devices include an electrode-defining layer. The electrode-defining layer typically has a via formed therein in which an electrode is formed (at least in part). Thus, the via defines ... | 07/04/2006 |
| 7064359 | Switching semiconductor device and switching circuit A switching semiconductor device includes a first compound layer formed on a single crystal substrate which includes silicon carbide or sapphire, and including a general formula InxGa1-xN, where 0≦x≦1; a second compound layer formed on the ... | 06/20/2006 |
| 7057213 | Chemical sensor using chemically induced electron-hole production at a schottky barrier Electron-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential f... | 06/06/2006 |
| 7052945 | Short-channel Schottky-barrier MOSFET device and manufacturing method A MOSFET device and method of fabricating are disclosed. The present invention utilizes Schottky barrier contacts for source and/or drain contact fabrication within the context of a MOSFET device structure to eliminate the requirement for halo/pocket implants and sh... | 05/30/2006 |
| 7034345 | High-power, integrated AC switch module with distributed array of hybrid devices A novel architecture of high-power four-quadrant hybrid power modules based on high-current trench gate IGBTs and arrays of low-current wide-bandgap diodes is conceived. The distributed physical layout of high power density wide-bandgap devices improves the cooling ... | 04/25/2006 |
| 7005686 | Mixed voltage tolerant electrostatic discharge protection silicon controlled rectifier with enhanced turn-on time Disclosed is a method for increasing substrate resistance in a silicon controlled rectifier in order to decrease turn on time so that the silicon controlled rectifier may be used as an effective electrostatic discharge protection device to protect against HBM, MM an... | 02/28/2006 |
| 7005347 | Structures of and methods of fabricating trench-gated MIS devices In a trench-gated MIS device contact is made to the gate within the trench, thereby eliminating the need to have the gate material, typically polysilicon, extend outside of the trench. This avoids the problem of stress at the upper corners of the trench. Contact bet... | 02/28/2006 |
| 6958513 | Floating-gate memory cell having trench structure with ballistic-charge injector, and the array of memory cells A method of forming an array of floating gate memory cells, and an array formed thereby, wherein each memory cell includes an electrical conductive floating gate formed in a trench in a semiconductor substrate, and an electrical conductive control gate having a port... | 10/25/2005 |
| 6956249 | Termination of semiconductor components The invention relates to a semiconductor component which is capable of blocking such as an (IGBT), a thyristor, a GTO or diodes, especially schottky diodes. An insulator profile section (10a, 10b, 10c, 10d, ... | 10/18/2005 |
| 6914280 | Switching circuit device Since a 5 GHz-band broadband has a frequency twice that of 2.4 GHz, the parasitic capacitance greatly influences deterioration in isolation of a switching device used in this frequency region. Therefore, to improve isolation, a shunt FET is added to the device. The ... | 07/05/2005 |
| 6897492 | Power device with bi-directional level shift circuit A gate driver includes a control signal generator having a first input and configured to output a gate control signal to a power semiconductor switch. The gate control signal generator is provided proximate a high side of the gate driver. A first sub-circuit has a f... | 05/24/2005 |
| 6852615 | Ohmic contacts for high electron mobility transistors and a method of making the same A process and related product in which ohmic contacts are formed in High Electron Mobility Transistors (HEMTs) employing compound substrates such as gallium nitride. An improved device and an improvement to a process for fabrication of ohmic contacts to GaN/AlGaN HE... | 02/08/2005 |
| 6841836 | Integrated device with Schottky diode and MOS transistor and related manufacturing process An integrated device comprising a MOS transistor and a Schottky diode which are formed on a semiconductor substrate of a first conductivity type is shown. The device comprises a plurality of body region stripes of a second conductivity type which are adjacent and pa... | 01/11/2005 |
| 6815733 | Switching element and method of making the same The switching element has a switching layer between a first electrode layer and a second electrode layer. The switching layer includes a charge transfer complex containing an electron donor and an electron acceptor. An insulating layer is provided between the first ... | 11/09/2004 |
| 6759692 | Gate driver with level shift circuit A gate driver includes a gate control signal generator having a first input and configured to output a gate control signal to a power semiconductor switch and a first sub-circuit having a first signal path and a second signal path that are suitable for transmitting ... | 07/06/2004 |
| 6756612 | Carrier coupler for thyristor-based semiconductor device Switching times of a thyristor-based semiconductor device are improved by enhancing carrier drainage from a buried thyristor-emitter region. According to an example embodiment of the present invention, a conductive contact extends to a doped well region buried in a ... | 06/29/2004 |
| 6753588 | Semiconductor rectifier A semiconductor rectifier includes an intermediate semiconductor region (29) extending between anode (9) and cathode (7) contacts. A trenched gate (19) with insulated sidewalls (15) and base (17) can deplete the intermediate... | 06/22/2004 |
| 6743703 | Power diode having improved on resistance and breakdown voltage A two-terminal power diode has improved reverse bias breakdown voltage and on resistance includes a semiconductor body having two opposing surfaces and a superjunction structure therebetween, the superjunction structure including a plurality of alternating P and N d... | 06/01/2004 |
| 6727529 | Semiconductor capacitively-coupled NDR device and related applications in high-density high-speed memories and in power switches A novel capacitively coupled NDR device can be used to implement a variety of semiconductor circuits, including high-density SRAM cells and power thyristor structures. In one example embodiment, the NDR device is used as a thin vertical PNPN structure with capacitiv... | 04/27/2004 |
| 6690038 | Thyristor-based device over substrate surface A semiconductor device having a thyristor is arranged in a manner that reduces or eliminates manufacturing difficulties commonly experienced in the formation of such devices, as well as facilitates the implementation of the semiconductor device in a varie... | 02/10/2004 |
| 6690037 | Field plated Schottky diode A Schottky diode is fabricated by a sequence of fabrication by a sequence of fabrication steps. An active region of a semiconductor substrate is defined in which a Schottky diode is fabricated. At least first and second layers of insulating material are a... | 02/10/2004 |
| 6686614 | Semiconductor switching element with integrated Schottky diode and process for producing the switching element and diode The invention relates to an integrated semiconductor switching element, that includes a semiconductor body having a first connection zone of a first conduction type and a second connection zone of the first conduction type. A body zone of a second conduct... | 02/03/2004 |
| 6627924 | Memory system capable of operating at high temperatures and method for fabricating the same A memory system having a plurality of T-RAM cells arranged in an array is presented where each T-RAM cell has dual vertical devices and is fabricated over a SiC substrate. Each T-RAM cell has a vertical thyristor and a vertical transfer gate. The top surf... | 09/30/2003 |
| 6621107 | Trench DMOS transistor with embedded trench schottky rectifier A merged device is that comprises a plurality of MOSFET cells and a plurality of Schottky rectifier cells, as well as a method of designing and making the same. According to an embodiment of the invention, the MOSFET cells comprise: (a) a source region of... | 09/16/2003 |
| 6605830 | Power semiconductor device including an IGBT with a MOS transistor as a current suppressing device incorporated therein A power semiconductor device including first and second assembly units. The first assembly of units includes a first semiconductor region of a second conductivity type selectively formed in a first main surface of the first semiconductor layer, a second s... | 08/12/2003 |
| 6600182 | High current field-effect transistor A MOSFET that provides high current conduction at high frequency includes a deposited layer over a substrate of a first conductivity type, with source and drain regions adjoining a top surface of the epitaxial layer. The drain region has a first portion t... | 07/29/2003 |
| 6555849 | Deactivatable thyristor A thyristor includes a semiconductor body having a first emitter layer and a first base layer on an anode side, a second base layer and a second emitter layer on a cathode side, a cathode contact, and an electrically insulating insulation layer having ope... | 04/29/2003 |
