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| Number | Title | Issue Date |
| 8093622 | Semiconductor device and its driving method A semiconductor device having a thyristor SCR with reduced turn-off time. A third semiconductor region of the second conductivity type (anode AN) and a fourth semiconductor region of the first conductivity type (anode gate AG) are formed in the top layer of a first ... | 01/10/2012 |
| 7429761 | High power diode utilizing secondary emission A high power diode includes a cathode for emitting a primary electron discharge, an anode, and a porous dielectric layer, e.g. a honeycomb ceramic, positioned between the cathode and the anode for receiving the primary electron discharge and emitting a secondary ele... | 09/30/2008 |
| 7400017 | Reverse conducting semiconductor device and a fabrication method thereof To provide a reverse conducting semiconductor device in which an insulated gate bipolar transistor and a free wheeling diode excellent in recovery characteristic are monolithically formed on a substrate, the free wheeling diode including; a second conductive type ba... | 07/15/2008 |
| 7332749 | Junction-gate type static induction thyristor and high-voltage pulse generator using such junction-gate type static induction thyristor A compact, inexpensive static induction thyristor (SIThy) which is less likely to be broken down at a high voltage rise-up rate during operation and which is used in a high-voltage pulse generator capable of generating a high-voltage short pulse is provided. Thickne... | 02/19/2008 |
| 7327541 | Operation of dual-directional electrostatic discharge protection device A two-terminal ESD protection structure formed by an arrangement of five adjacent semiconductor regions (112, 114, 116, 118, and 120) of alternating conductivity type provides protection against both positive and negative ESD voltages. The middle semic... | 02/05/2008 |
| 7320897 | Electroluminescence device with nanotip diodes A nanotip electroluminescence (EL) diode and a method are provided for fabricating said device. The method comprises: forming a plurality of Si nanotip diodes; forming a phosphor layer overlying the nanotip diode; and, forming a top electrode overlying the phosphor ... | 01/22/2008 |
| 7276778 | Semiconductor system functioning as thyristor in on-state, and as bipolar transistor in transient state or with overcurrent A semiconductor system includes a self arc-extinguishing device, and an IGBT that works as a thyristor when a current between a first terminal and a second terminal connected to a second well electrode is small, and as a bipolar transistor when that current is large... | 10/02/2007 |
| 7259440 | Fast switching diode with low leakage current A fast switching diode includes an n− layer having an upper surface and a lower surface and a first edge and a second edge, the second edge provided on an opposing side of the first edge. A converted region is provided proximate the upper surface of the n− layer... | 08/21/2007 |
| 7250628 | Memory devices and electronic systems comprising thyristors The invention includes SOI constructions containing one or more memory cells which include a transistor and a thyristor. In one aspect, a scalable GLTRAM cell provides DRAM-like density and SRAM-like performance. The memory cell includes an access transistor and a g... | 07/31/2007 |
| 7233031 | Vertical power semiconductor component A vertical power semiconductor component, e.g. a diode or an IGBT, in which there are formed, on the rear side of a substrate, a rear side emitter or a cathode emitter and, over that, a rear side metal layer that at least partly covers the latter, is defined by the ... | 06/19/2007 |
| 7139990 | Method of checking the layout versus the schematic of multi-fingered MOS transistor layouts using a sub-circuit based extraction A sub-circuit based extraction method which extracts a multi-finger MOS transistor directly as a sub-circuit is described. By adding three marking layers, the method provides the layout extracted netlist with a complete list of device geometric parameters correspond... | 11/21/2006 |
| 7138836 | Hot carrier injection suppression circuit A method of preventing Hot Carrier Injection in input/output connections on low voltage integrated circuits. As integrated circuit voltages drop generally so does the external voltages that those circuits can tolerate. By placing input/output devices, in series, ext... | 11/21/2006 |
| 7135717 | Semiconductor switches and switching circuits for microwave The purpose of the present invention is to provide a small-sized switch attaining high isolation of not less than 80 dB, maintaining low insertion loss also in high frequencies not less than 60 GHz. A semiconductor switch according to the present invention utilizes ... | 11/14/2006 |
| 7002379 | I/O circuit using low voltage transistors which can tolerate high voltages even when power supplies are powered off An apparatus for providing bias voltages for input/output (I/O) connections on low voltage integrated circuits. In one embodiment, the invention comprises an I/O pad, a pull-down transistor device that has a protective transistor coupled to said I/O pad, and a pull-... | 02/21/2006 |
| 6921943 | System and method for reducing soft error rate utilizing customized epitaxial layers The present invention is directed to a built-in solution for soft error protection by forming an epitaxial layer with a graded dopant concentration. By grading a dopant concentration, starting from a first dopant concentration and ending with a second dopant concent... | 07/26/2005 |
| 6774434 | Field effect device having a drift region and field shaping region used as capacitor dielectric A field effect transistor semiconductor device (1) comprises a source region (33), a drain region (14) and a drain drift region (11), the device having a field shaping region (20) adjacent the drift region (11) and arranged ... | 08/10/2004 |
| 6737705 | Insulated gate semiconductor device A trench-type IGBT includes a silicon substrate, a lightly doped n-type drift layer on the silicon substrate, and a p-type base layer on the n-type drift layer. The p-type base layer is doped more heavily than the n-type drift layer, and is formed of first regions a... | 05/18/2004 |
| 6727526 | Thyristor with recovery time voltage surge resistance A preferably asymetrical thyristor (1) with at least one driver stage (20) for amplifying a control current (I) fed into the cathodal base (16) of the thyristor, in which, in the driver stage, the transistor gain factors αnpn and α | 04/27/2004 |
| 6677622 | Semiconductor device having insulated gate bipolar transistor with dielectric isolation structure A semiconductor substrate is of first-conductivity-type and has a principal surface. A first semiconductor region and a second semiconductor region are of second-conductivity-type and formed apart from each other in the principal surface of the semiconduc... | 01/13/2004 |
| 6657239 | Power-switching semiconductor device In order to reduce a turn-on time of a power switching semiconductor device at a low cost, a first main electrode divided into a plurality of segments forming segment rows of a multi-concentric circle and a control electrode surrounding the segments are f... | 12/02/2003 |
| 6476429 | Semiconductor device with breakdown voltage improved by hetero region A power MOSFET includes an n- -drain layer, a drain contact layer disposed on a first side of the drain layer, a p-type base layer disposed on a second side of the drain layer, and an n-source layer disposed on the base layer. A gate electrode ... | 11/05/2002 |
| 6429501 | Semiconductor device having high breakdown voltage and method for manufacturing the device A power device has its main junction formed in a central portion of an N-type substrate. A P-type layer is formed in a peripheral surface portion of the substrate. A P- -type RESURF layer of a lower impurity concentration than the P-type layer ... | 08/06/2002 |
| 6313485 | Gate-controlled thyristor A gate-controlled thyristor in which an IGBT in a first cell and a thyristor in a main cell are connected together in ouch a way that the first cell and the main cell form a lateral FET with a channel of a first conducting type. In an emitter zone of the ... | 11/06/2001 |
| 6278140 | Insulated gate thyristor An insulated gate thyristor is provided which includes: a first-conductivity-type base layer, first and second-conductivity-type base regions formed in the base layer, a first-conductivity-type source region formed in the first base region, a first-conduc... | 08/21/2001 |
| 6271545 | Asymmetrical thyristor with blocking/sweep voltage independent of temperature behavior Both the blocking voltage as well as the sweep voltage of conventional thyristors exhibit a pronounced temperature behavior, whereby the corresponding voltage values can change by up to 15% within the relevant temperature range (5° C.-120° C.). In the p... | 08/07/2001 |
| 6258634 | Method for manufacturing a dual-direction over-voltage and over-current IC protection device and its cell structure A two terminal ESD protection structure formed by an alternating arrangement of adjacent p-n-p-n-p semiconductor regions provides protection against both positive and negative ESD pulses. When an ESD pulse appears across the two terminals of the ESD prote... | 07/10/2001 |
| 6236069 | Insulated-gate thyristor Disclosed herein is an insulated-gate thyristor comprising a base layer of a first conductivity type, having first and second major surfaces, a first main-electrode region of the first conductivity type, formed in the first major surface of the base layer... | 05/22/2001 |
| 6180965 | Semiconductor device having a static induction in a recessed portion In a static induction semiconductor device, particular a high power static induction semiconductor device, recessed portions 12 are formed in one surface of a silicon substrate 11 of one conductivity type, gate regions 13 of the other conductivity type ar... | 01/30/2001 |
| 6172381 | Source/drain junction areas self aligned between a sidewall spacer and an etched lateral sidewall An integrated circuit fabrication process is provided in which an elevated doped polysilicon structure may be formed and isolated from another polysilicon structure lying in the same elevated plane. The elevated structure may serve as a junction area of a... | 01/09/2001 |
| 6147369 | SCR and current divider structure of electrostatic discharge protective circuit An electrostatic discharge protective circuit of the invention includes a silicon controller rectifier (SCR) and a current diverter. The current diverter is used to bypass an initial low current thereby to prevent the SCR from being triggered by the low c... | 11/14/2000 |
| 6111290 | Semiconductor device having high breakdown voltage and method of manufacturing the same In a semiconductor device with a high breakdown voltage, insulating layers are buried at regions in n- silicon substrate located between gate trenches which are arranged with a predetermined pitch. This structure increases a carrier density at... | 08/29/2000 |
| 6111278 | Power semiconductor devices having discontinuous emitter regions therein for inhibiting parasitic thyristor latch-up Power semiconductor devices having discontinuous emitter regions therein include a semiconductor substrate containing therein a collector region of second conductivity type, a buffer region of first conductivity type which forms a first P-N junction with ... | 08/29/2000 |
| 6054728 | Insulated gate thyristor An insulated gate thyristor is provided which includes: a first-conductivity-type base layer, first and second second-conductivity-type base regions formed in the base layer, a first-conductivity-type source region formed in the first base region, a ... | 04/25/2000 |
| 5998811 | Trench emitter controlled thyristor A trench emitter controlled thyristor 30 having a collector layer 32, a drift layer 34, a body layer 36, and a floating layer 38. Each of the layers 32, 34, 36, and 38 contacts the adjacent layer(s). The floating layer 38 does not cover the entirety of th... | 12/07/1999 |
| 5981984 | Insulated gate thyristor An insulated gate thyristor includes a first-conductivity-type base layer having a high resistivity, first and second second-conductivity-type base regions formed in a surface layer of the first-conductivity-type base layer, a first-conductivity-type sour... | 11/09/1999 |
| 5977569 | Bidirectional lateral insulated gate bipolar transistor having increased voltage blocking capability A bidirectional lateral insulated gate bipolar transistor (IGBT) includes two gate electrodes. The IGBT can conduct current in two directions. The IGBT relies on a double RESURF structure to provide high voltage blocking in both directions. The IGBT is sy... | 11/02/1999 |
| 5939736 | Insulated gate thyristor A semiconductor device for conducting a in current across a cathode electrode and an anode electrode, includes a thyristor formed of an n+ floating region connected electrically to the cathode electrode, a p+ anode connected electric... | 08/17/1999 |
| 5936267 | Insulated gate thyristor Surfaces of a second p base region 6 and an n emitter region 8 are covered with an insulating film 19 and the second p base region 6 and a first p base region 4 are connected partially below a gate electrode 10. In a conventional EST, a potential differen... | 08/10/1999 |
| 5923055 | Controllable semiconductor component The invention concerns a semiconductor component which can be controlled on the anode side and whose semiconductor body comprises a plurality of adjacent, parallel-connected unit cells having a thyristor structure. A lightly doped n-base region (3) is adj... | 07/13/1999 |
| 5894149 | Semiconductor device having high breakdown voltage and method of manufacturing the same In a semiconductor device with a high breakdown voltage, insulating layers are buried at regions in n31 silicon substrate located between gate trenches which are arranged with a predetermined pitch. This structure increases a carrier density a... | 04/13/1999 |
