Class 257/151 - External gate terminal structure or composition

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the external electrical terminal
No. of patents: 30
Last issue date: 07/26/2011

Number	Title	Issue Date
7985982	Etchant composition, patterning conductive layer and manufacturing flat panel, display device using the same An etchant composition that allows simplification and optimization of semiconductor manufacturing process is presented, along with a method of patterning a conductive layer using the etchant and a method of manufacturing a flat panel display using the etchant. The e...	07/26/2011
7385249	Transistor structure and integrated circuit A process for forming a conductive gate structure for a sub-0.25 MOSFET technology, has been developed. The process features a conductive gate structure defined from a composite polysilicon or amorphous layer, which in turn is obtained via a dual deposition procedur...	06/10/2008
7323716	Manufacturing method of thin film transistor substrate This invention provides a manufacturing method for fabricating on the same substrate both high voltage thin film transistors suitable for driving liquid crystal and low voltage drive high performance thin film transistors. In addition, this invention provides a thin...	01/29/2008
7242012	Lithography device for semiconductor circuit pattern generator General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor ...	07/10/2007
7179694	Semiconductor device, electro-optical device, integrated circuit and electronic equipment A method of manufacturing a semiconductor device includes an origin part forming process in order to form a plurality of origin parts, each of which serves as an origin for crystallization of a semiconductor film on a substrate, a semiconductor film forming process ...	02/20/2007
7153729	Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. A catalytic element for facilitating crystallization of an amorphous semiconductor thin film is added to the amorphous semicondu...	12/26/2006
7135717	Semiconductor switches and switching circuits for microwave The purpose of the present invention is to provide a small-sized switch attaining high isolation of not less than 80 dB, maintaining low insertion loss also in high frequencies not less than 60 GHz. A semiconductor switch according to the present invention utilizes ...	11/14/2006
7115487	Crystalline thin film and process for production thereof, element employing crystalline thin film, circuit employing element, and device employing element or circuit A process for producing a crystalline thin film is provided which comprises melting and resolidifying a starting thin film having regions different in the state coexisting continuously. A small region of the starting thin film has a size distribution of number conce...	10/03/2006
7064359	Switching semiconductor device and switching circuit A switching semiconductor device includes a first compound layer formed on a single crystal substrate which includes silicon carbide or sapphire, and including a general formula InxGa1-xN, where 0≦x≦1; a second compound layer formed on the ...	06/20/2006
6960809	Polysilicon thin film transistor and method of forming the same A polysilicon thin film transistor and a method of forming the same is provided. A poly-island layer is formed over a substrate. A gate insulation layer is formed over the poly-island layer. A gate is formed over the gate insulation layer. Using the gate as a mask, ...	11/01/2005
6949452	Method for fabricating image display device There is provided a method for fabricating an image display device having an active matrix substrate including high-performance transistor circuits operating with high mobility as drive circuits for driving pixel portions which are arranged as a matrix. The portion ...	09/27/2005
6878579	Semiconductor device and method of manufacturing the same An aspect of the present invention includes a first conductive type semiconductor region; a gate electrode formed on the first conductive type semiconductor region; a channel region formed immediately below the gate electrode in the first conductive type semiconduct...	04/12/2005
6791106	Semiconductor device and method of manufacturing the same An aspect of the present invention includes a first conductive type semiconductor region; a gate electrode formed on the first conductive type semiconductor region; a channel region formed immediately below the gate electrode in the first conductive type semiconduct...	09/14/2004
6787407	Method of manufacturing a semiconductor device The present invention relates to a method of manufacturing a semiconductor device having an excellent gettering effect. In this method, when phosphorus is added to a poly-Si film, which has been crystallized by the addition of a metal, to subject the resultant poly-...	09/07/2004
6521992	Semiconductor apparatus An electrode wiring structure is disclosed which realizes a semiconductor apparatus as a power semiconductor module with the current path set as shortest as possible and uniformly. The semiconductor apparatus includes: a plurality of semiconductor devices...	02/18/2003
6504174	Semiconductor device and method for fabricating the same A novel and very useful method for forming a crystal silicon film by introducing a metal element which promotes crystallization of silicon to an amorphous silicon film and for eliminating or reducing the metal element existing within the crystal silicon f...	01/07/2003
6504184	Superior silicon carbide integrated circuits and method of fabricating The present invention provides semiconductor devices having at least one silicon region in a silicon carbide wafer in which is fabricated a low voltage semiconductor device such as for example, MOSFET devices, BiCMOS devices, Bipolar devices, etc., and on...	01/07/2003
6423988	Pressure-contact semiconductor device This invention relates to a pressure-contact type semiconductor device (1) having a ring-shaped gate terminal, and aims at overcoming such a technical problem that a gate current is not uniformly supplied to a semiconductor substrate (4) due to a connecti...	07/23/2002
6166402	Pressure-contact type semiconductor element and power converter thereof A double circular gate conductor 9 comprises a first circular gate conductor 7 connected to a gate electrode 2a, a second circular gate conductor 8, and a connecting conductor which connects the first circular gate conductor 7 and the second circular gate...	12/26/2000
5844259	Vertical conduction MOS controlled thyristor with increased IGBT area and current limiting An MCT is formed as a four-layer device, using alternating cells of: (a) P diffusions in an N- wafer having lower N+ and P+ layers with N+ cathode regions in the P diffusions, and (b) shallow P+ diver...	12/01/1998
5757037	Power thyristor with MOS gated turn-off and MOS-assised turn-on The power thyristor of this invention has a cellular emitter structure. Each cell also has a FET assisted turn-on gate integrated into the cell. A turn-on gate voltage of one polarity is applied to a FET gate element that overlies the surface of the cell ...	05/26/1998
5757035	Semiconductor device In a surface of a silicon substrate of one conductivity type, there are formed a plurality of depressions or recesses, gate regions of opposite conductivity type are formed at bottoms of respective recesses, gate electrodes are provided on respective gate...	05/26/1998
5659185	Insulated Gate thyristor Improved breakdown withstand capability is realized in a double gate insulated gate thyristor with low on-voltage in the thyristor operation mode and high-speed turn-off in the IGBT operation mode. Turn-off current through the lateral MOSFET using a secon...	08/19/1997
5652467	Semiconductor device and package structure therefore and power inverter having semiconductor device An auxiliary cathode lead is contacted to a cathode buffer electrode which contacts to an unit GTO arranged at the most remote region from a gate pressure contacting portion of a GTO pellet and the push-into effect of the auxiliary cathode current during ...	07/29/1997
5637888	Insulated gate thyristor The maximum controllable current of an insulated gate thyristors is improved by optimizing the length and sheet resistance of the poly-silicon constituting the gate electrodes. The device has an n- base layer with high resistivity, on the first...	06/10/1997
5471075	Dual-channel emitter switched thyristor with trench gate A semiconductor switching device includes a plurality of adjacent and parallel-connected switching cells in a semiconductor substrate. Each cell includes a thyristor having a floating emitter region and a trench-gate field effect transistor (TFET) for pro...	11/28/1995
5457329	Voltage-driven thyristor An n-buffer layer and an n- -base layer are formed on a p+ -anode layer. A p-base layer is formed on the n- -base layer. The p-base layer has a p-type impurity layer protruding into n- -base layer. An n-cathode ...	10/10/1995
5387806	GTO-thyristor The semiconductor substrate of a GTO-Thyristor is structured at a cathode-side such that the cathode electrode lies in a first uppermost level of and in a second level lying there below. A gate contact lies in a third lowest level. Passivation layers exte...	02/07/1995
5281833	Insulated gate control thyristor An insulated gate control thyristor including an n-type base region, an insulating layer, gates formed on the insulating layer, first and second windows formed in the insulating layer, p-type emitter layers and n-type cathode layers diffused into the base...	01/25/1994
4882612	Power semiconductor device In a power semiconductor device according to the present invention, a sheet, formed of a soft metal such as Ag, is provided on that portion of a pressing control electrode which is brought into contact with an Al gate electrode of a pellet. By means of th...	11/21/1989

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Class 257/151 - External gate terminal structure or composition