Did You Know...
...that in 1800 ether was first used by partyers as a fun diversion? Sniffing the gas led to hilarious and raucous laughter as people watched each other become more and more intoxicated and silly. Several doctors independently realized the value ether would have to anesthetize surgery patients. Of those who claimed rights to the "discovery," none had a happy ending. One had a seizure and died defending his rights. Another spent his life in an asylum because he had been denied acclaim. A third became addicted to chloroform and, in a New York City jail, he soaked a cloth in the drug, severed an artery and bled to death.
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| Number | Title | Issue Date |
| 8173991 | Optoelectronic semiconductor chip having a multiple quantum well structure An optoelectronic semiconductor chip is specified, which has an active zone (20) containing a multi quantum well structure provided for generating electromagnetic radiation, which comprises a plurality of successive quantum well layers (210, 220, 230).... | 05/08/2012 |
| 8039830 | Semiconductor light emitting device and wafer A semiconductor light emitting device includes a first layer made of at least one of n-type GaN and n-type AlGaN; a second layer made of Mg-containing p-type AlGaN; and a light emitting section provided between the first layer and the second layer. The light emittin... | 10/18/2011 |
| 7935956 | Optoelectronic device based on compound semiconductor quantum dots in SiGe cladding layers A device having an optically active region includes a silicon substrate and a SiGe cladding layer epitaxially grown on the silicon substrate. The SiGe cladding layer includes a plurality of arrays of quantum dots separated by at least one SiGe spacing layer, the qua... | 05/03/2011 |
| 7906775 | Superlattice nanopatterning of wires and complex patterns Fabrication of metallic or non-metallic wires with nanometer widths and nanometer separation distances without the use of lithography. Wires are created in a two-step process involving forming the wires at the desired dimensions and transferring them to a planar sub... | 03/15/2011 |
| 7884351 | Nitride semiconductor light-emitting device In a nitride semiconductor light-emitting device (11), an emission region (17) has a quantum well structure (19), and lies between an n-type gallium nitride semiconductor region (13) and a p-type gallium nitride semiconductor region (1... | 02/08/2011 |
| 7872253 | Thermoelectric material, infrared sensor and image forming device A thermoelectric conversion material includes a superlattice structure produced by laminating a barrier layer containing insulating SrTiO3, and a quantum well layer containing SrTiO3 which has been converted into a semiconductor by doping an n-... | 01/18/2011 |
| 7868316 | Nitride semiconductor device There is provided a nitride semiconductor device. A nitride semiconductor device according to an aspect of the invention may include: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; an active layer provided between the n-type and p-type ... | 01/11/2011 |
| 7812339 | Method for making a semiconductor device including shallow trench isolation (STI) regions with maskless superlattice deposition following STI formation and related structures A semiconductor device may include a semiconductor substrate having a surface, a shallow trench isolation (STI) region in the semiconductor substrate and extending above the surface thereof, and a superlattice layer adjacent the surface of the semiconductor substrat... | 10/12/2010 |
| 7723719 | Light emitting devices with inhomogeneous quantum well active regions A method of fabricating a light emitting device includes modulating a crystal growth parameter to grow a quantum well layer that is inhomogeneous and that has a non-random composition fluctuation across the quantum well layer. ... | 05/25/2010 |
| 7714317 | Assembly of ordered carbon shells on semiconducting nanomaterials In some embodiments of the invention, encapsulated semiconducting nanomaterials are described. In certain embodiments the nanostructures described are semiconducting nanomaterials encapsulated with ordered carbon shells. In some aspects a method for producing encaps... | 05/11/2010 |
| 7692181 | Gallium-nitride based light emitting diode light emitting layer structure A number of light-emitting layer structures for the GaN-based LEDs that can increase the lighting efficiency of the GaN-based LEDs on one hand and facilitate the growth of epitaxial layer with better quality on the other hand are provided. The light-emitting layer s... | 04/06/2010 |
| 7679077 | Superlattice nano-device and method for making same A nanodevice (1) for a desired function includes a substrate (11), a one-dimensional nanostructure (12), a functional layer (20) having a desired function, a conductive thin film electrode (30), and an insulating layer (40).... | 03/16/2010 |
| 7638791 | InAs/GaSb infrared superlattice photodiodes doped with Beryllium An improved photodiode and method of producing an improved photodiode comprising doping an InAs layer of an InAs/GaSb region situated on top of an InAs/GaSb:Be superlattice and below an InAs:Si/GaSb regions such that the quantum efficiency of the photodiode increase... | 12/29/2009 |
| 7479651 | Semiconductor device A semiconductor device comprises an active layer formed on a substrate, a superlattice layer formed on the active layer, and an ohmic electrode formed on the superlattice layer. In the superlattice layer, a first thin film and a second thin film are alternately lami... | 01/20/2009 |
| 7459719 | Superlattice optical semiconductor device where each barrier layer has high content of group III elements in center portion and low content near well layer An optical semiconductor device includes an active layer having a quantum well structure including alternately stacked well layers and barrier layers with a larger band gap than the well layers. The band gap of each of the well layers and the barrier layers is const... | 12/02/2008 |
| 7432524 | Integrated circuit comprising an active optical device having an energy band engineered superlattice An integrated circuit may include at least one active optical device including a superlattice including a plurality of stacked groups of layers. Each group of layers of the superlattice may include a plurality of stacked base semiconductor monolayers defining a base... | 10/07/2008 |
| 7432550 | Semiconductor structure including mixed rare earth oxide formed on silicon A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon. ... | 10/07/2008 |
| 7411187 | Ion trap in a semiconductor chip A micrometer-scale ion trap, fabricated on a monolithic chip using semiconductor micro-electromechanical systems (MEMS) technology. A single 111Cd+ ion is confined, laser cooled, and the heating measured in an integrated radiofrequency trap etched from a doped galli... | 08/12/2008 |
| 7405422 | Epitaxial and polycrystalline growth of SiGeCand SiCalloy layers on Si by UHV-CVD A method and apparatus for depositing single crystal, epitaxial films of silicon carbon and silicon germanium carbon on a plurality of substrates in a hot wall, isothermal UHV-CVD system is described. In particular, a multiple wafer low temperature growth technique ... | 07/29/2008 |
| 7375368 | Superlattice for fabricating nanowires This disclosure relates to a system and method for creating nanowires. A nanowire can be created by exposing layers of material in a superlattice and dissolving and transferring material from edges of the exposed layers onto a substrate. The nanowire can also be cre... | 05/20/2008 |
| 7372066 | Gallium nitride compound semiconductor device and manufacturing method A light-emitting element using GaN. On a substrate (10), formed are an SiN buffer layer (12), a GaN buffer layer (14), an undoped GaN layer (16), an Si-doped n-GaN layer (18), an SLS layer (20), an undoped GaN layer (22 | 05/13/2008 |
| 7372078 | Vertical gallium-nitride based light emitting diode A vertical GaN-based LED includes: an n-electrode; a light-emitting structure in which an n-type GaN layer, an active layer, and a p-type GaN layer are sequentially formed under the n-electrode; a p-electrode formed under the light-emitting structure; a passivation ... | 05/13/2008 |
| 7368763 | Semiconductor device and manufacturing method thereof A high quality silicon carbide (SiC) layer being substantially lower in threading dislocation density than a prior layer is formed on silicon (Si) substrate. A semiconductor device is fabricated in such a way that a semiconductor buffer layer containing Si in part a... | 05/06/2008 |
| 7365372 | Semiconductor device and method for manufacturing semiconductor device The present invention is to provide a semiconductor device including: a semiconductor layer that has a first-conductivity-type region, a second-conductivity-type region, a first-conductivity-type region, and a second-conductivity-type region that are adjacent to eac... | 04/29/2008 |
| 7358523 | Method and structure for deep well structures for long wavelength active regions Subwells are added to quantum wells of light emitting semiconductor structures to shift their emission wavelengths to longer wavelengths. Typical applications of the invention are to InGaAs, InGaAsSb, InP and GaN material systems, for example. ... | 04/15/2008 |
| 7358159 | Method for manufacturing ZnTe compound semiconductor single crystal ZnTe compound semiconductor single crystal, and semiconductor device The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by u... | 04/15/2008 |
| 7350397 | Device for measuring the quantity of solid particles in a gas medium A device for detecting the amount or concentration of particulate matter in a gas medium comprises a structure for the deposit of solid particles, at least a first and a second electrode associated to the structure, and means for measuring an electric quantity betwe... | 04/01/2008 |
| 7352018 | Non-volatile memory cells and methods for fabricating non-volatile memory cells The invention relates to a method for fabricating stacked non-volatile memory cells. Further, the invention relates to stacked non-volatile memory cells. The invention particularly relates to the field of non-volatile NAND memories having non-volatile stacked memory... | 04/01/2008 |
| 7348602 | Nitride semiconductor device The present invention provides a nitride semiconductor light emitting device with an active layer of the multiple quantum well structure, in which the device has an improved luminous intensity and a good electrostatic withstanding voltage, thereby allowing the expan... | 03/25/2008 |
| 7342170 | Thermoelectric module with Si/SiC and BC/BC super-lattice legs A super-lattice thermoelectric device. The device is comprised of p-legs and n-legs, each leg being comprised of a large number of very thin alternating layers of two materials with differing electron band gaps. The n-legs in the device are comprised of alternating ... | 03/11/2008 |
| 7342276 | Method and apparatus utilizing monocrystalline insulator A semiconductor device, including: a semiconductor material; a conductive element; and a substantially monocrystalline insulator disposed between the semiconductor material and the conductive eleme... | 03/11/2008 |
| 7335519 | Method for manufacturing a light-emitting diode A method for manufacturing a light-emitting diode (LED) is disclosed. In the method, a substrate is firstly provided, in which a first conductivity type cladding layer, an active layer, a second conductivity type cladding layer, a superlattice contact layer and a tr... | 02/26/2008 |
| 7331566 | Nitride semiconductor light emitting device A nitride semiconductor light emitting device and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device comprises an n-type nitride semiconductor layer formed on a substrate, an active layer formed on the n-type nitride se... | 02/19/2008 |
| 7332364 | Method of fabricating a Zn-base semiconductor light emitting device A p-n junction interface 3 is formed between an n-type ZnTe1-xOx (0.5≦x≦1) layer 8 and a p-type ZnTe1-xOx (0≦x | 02/19/2008 |
| 7323725 | Semiconductor device The present invention relates to a semiconductor device having a multi-layered structure comprising an emitter layer, a base layer, and a collector layer, each composed of a group III-V n-type compound semiconductor in this order; a quantum dot barrier layer dispose... | 01/29/2008 |
| 7310454 | Photonic bandgap modulator, amplifier, demux, and TDM devices An optical device includes at least two photonic bandgap crystal (PBG) stacks that are each comprised of alternating layers of high and low index materials. A defect region is formed in a cavity region between the at least two photonic bandgap crystal stacks so as t... | 12/18/2007 |
| 7310361 | Intersubband semiconductor lasers with enhanced subband depopulation rate Intersubband semiconductor lasers (ISLs) are of great interest for mid-infrared (2-20 μm) device applications. These semiconductor devices have a wide range of applications from pollution detection and industrial monitoring to military functions. ISLs have g... | 12/18/2007 |
| 7295586 | Carbon doped GaAsSb suitable for use in tunnel junctions of long-wavelength VCSELs GaAs(1−x)Sbx layers are grown by MOCVD. For lattice matching with InP, x is set to 0.5, while beneficial alternatives include setting x to 0.23, 0.3, and 0.4. During MOVCD, TMGa (or TEGa), TMSb, and AsH3 (or TBAs) are used to fabri... | 11/13/2007 |
| 7285378 | Juxtaposed island manufacturing method by means of self-organised deposition on a substrate and structure obtained using said method The invention relates to a structure composed of a substrate wherein a surface supports juxtaposed islands, characterized in that the islands rest on a periodic network of terraces composed of the intersection of two step networks, each terrace having a first dimens... | 10/23/2007 |
| 7279047 | Reactor for extended duration growth of gallium containing single crystals An apparatus for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If de... | 10/09/2007 |
